Works matching DE "INTEGRATED circuit passivation"

Results: 88

Long term integrity against corrosion of titanium used for TRU waste container.

Published in:

Corrosion Engineering, Science & Technology, 2011, v. 46, n. 2, p. 159, doi. 10.1179/1743278210Y.0000000018

By:

Nakayama, G;
Sakakibara, Y;
Kawakami, S

Publication type:

Article

Kinetics of oxide film growth on cobalt in neutral aqueous solutions.

Published in:

Corrosion Engineering, Science & Technology, 2009, v. 44, n. 4, p. 261, doi. 10.1179/174327808X326928

By:

Abd El-Haleem, S. M.;
Abd El-Aal, E. E.;
El-Wanees, S. Abd

Publication type:

Article

Graphene/Si CMOS Hybrid Hall Integrated Circuits.

Published in:

Scientific Reports, 2014, p. 1, doi. 10.1038/srep05548

By:

Le Huang;
Huilong Xu;
Zhiyong Zhang;
Chengying Chen;
Jianhua Jiang;
Xiaomeng Ma;
Bingyan Chen;
Zishen Li;
Hua Zhong;
Lian-Mao Peng

Publication type:

Article

Corrosion Behavior of Passivated 316LSS with Ag Coating as PEMFC Bipolar Plate.

Published in:

International Journal of Corrosion, 2011, p. 1, doi. 10.1155/2011/103785

By:

Naibao Huang;
Chenghao Liang;
Hongtao Wang;
Lishuang Xu;
Hongfeng Xu

Publication type:

Article

Bismuth Borosilicate-Based Thick Film Passivation of Ag Grid for Large-Area Dye-Sensitized Solar Cells.

Published in:

Journal of the American Ceramic Society, 2010, v. 93, n. 6, p. 1554, doi. 10.1111/j.1551-2916.2009.03577.x

By:

Deuk Ho Yeon;
Kyung Kon Kim;
Nam Gyu Park;
Yong Soo Cho

Publication type:

Article

Hydrogen-Induced Failure in ZnO Multilayer Ceramic Chip Varistors with a Zinc Phosphate Passivation Layer.

Published in:

Journal of the American Ceramic Society, 2008, v. 91, n. 6, p. 2064, doi. 10.1111/j.1551-2916.2008.02378.x

By:

Wan Ping Chen;
Kan Zhu;
Yu Wang;
Chan, Helen L. W.;
Jun Wu;
Chang He Ye

Publication type:

Article

PECVD-ONO: A New Deposited Firing Stable Rear Surface Passivation Layer System for Crystalline Silicon Solar Cells.

Published in:

Advances in OptoElectronics, 2008, p. 1, doi. 10.1155/2008/485467

By:

Hofmann, M.;
Kambor, S.;
Schmidt, C.;
Grambole, D.;
Rentsch, J.;
Glunz, S. W.;
Preu, R.

Publication type:

Article

Grain boundary passivation by CdCl2 treatment in CdTe solar cells revealed by Kelvin probe force microscopy.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 24, p. 20718, doi. 10.1007/s10854-018-0212-9

By:

Li, Chuang;
Chen, Gang;
Wang, Wenwu;
Zhang, Jingquan;
Wu, Lili;
Hao, Xia;
Feng, Lianghuan

Publication type:

Article

Emitter passivation of silicon solar cell via organic coating at room temperature.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 12, p. 12459, doi. 10.1007/s10854-016-5706-8

By:

Shinde, Onkar;
Funde, Adinath;
Agarwal, Mohit;
Jadkar, Sandesh;
Mahamuni, Shailaja;
Dusane, Rajiv;
Dhere, Neelkanth;
Ghaisas, Subhash

Publication type:

Article

TEMPERATURE DEPENDENCE OF MICROELECTRONIC DEVICE FAILURES.

Published in:

Quality & Reliability Engineering International, 1990, v. 6, n. 4, p. 275, doi. 10.1002/qre.4680060410

By:

Pecht, Michael;
Lall, Pradeep;
Whelan, Stanley J.

Publication type:

Article

Interface Passivation Effects on the Photovoltaic Performance of Quantum Dot Sensitized Inverse Opal TiO2 Solar Cells.

Published in:

Nanomaterials (2079-4991), 2018, v. 8, n. 7, p. 460, doi. 10.3390/nano8070460

By:

Kanae Hori;
Yaohong Zhang;
Pimsiri Tusamalee;
Naoki Nakazawa;
Yasuha Yoshihara;
Ruixiang Wang;
Taro Toyoda;
Shuzi Hayase;
Qing Shen

Publication type:

Article

Adhesion between an underfill and the passivation layer in flip-chip packaging.

Published in:

Journal of Adhesion Science & Technology, 2004, v. 18, n. 2, p. 275, doi. 10.1163/156856104772759467

By:

Shijian Luo;
Wong, C.P.

Publication type:

Article

Efficient Low-Cost IBC Solar Cells with a Front Floating Emitter: Structure Optimization and Passivation Layer Study.

Published in:

Energies (19961073), 2018, v. 11, n. 4, p. 939, doi. 10.3390/en11040939

By:

Dong, Peng;
Zhang, Yuming;
Guo, Hui;
Zhang, Chenxu;
Ma, Jikui;
Qu, Xiaoyong;
Zhang, Chunfu

Publication type:

Article

A Feedback Passivation Design for DC Microgrid and Its DC/DC Converters.

Published in:

Energies (19961073), 2017, v. 10, n. 1, p. 14, doi. 10.3390/en10010014

By:

Feifan Ji;
Ji Xiang;
Wuhua Li;
Quanming Yue

Publication type:

Article

InGaN/GaN QDs Nanorods: Processing and Properties.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2096, doi. 10.1134/S1063782618160145

By:

Kotlyar, K. P.;
Soshnikov, I. P.;
Morozov, I. A.;
Berezovskaya, T. N.;
Kryzhanovskaya, N. V.;
Kudryashov, D. A.;
Lysak, V. V.

Publication type:

Article

Thermo-Mechanical Failure Criterion at the Micron Scale in Electronic Devices.

Published in:

International Journal of Fracture, 2003, v. 122, n. 1/2, p. 47, doi. 10.1023/B:FRAC.0000005374.52613.83

By:

Yosibash, Z.;
Adan, O.;
Schneck, R.;
Atlas, H.

Publication type:

Article

Performance improvement of AlGaN/GaN HEMTs using two-step silicon nitride passivation.

Published in:

Microwave & Optical Technology Letters, 2010, v. 52, n. 7, p. 1614, doi. 10.1002/mop.25266

By:

Heng-Kuang Lin;
Hsiang-Lin Yu;
Huang, F.-H.

Publication type:

Article

The SiNx passivation thickness effect on AlGaAs/InGaAs/GaAs pHEMT performance.

Published in:

Microwave & Optical Technology Letters, 2001, v. 29, n. 2, p. 81, doi. 10.1002/mop.1090

By:

Li Hongqin;
Sun Xiaowei;
Xia Guanqun

Publication type:

Article

Improved InGaAs/InP double-heterojunction bipolar transistors using a thin-emitter structure design.

Published in:

Microwave & Optical Technology Letters, 1999, v. 21, n. 4, p. 235, doi. 10.1002/(SICI)1098-2760(19990520)21:4<235::AID-MOP1>3.0.CO;2-W

By:

Driad, R.;
McKinnon, W. R.;
Laframboise, S.;
McAlister, S. P.

Publication type:

Article

Passivating film as a structured solid solution of the alloy oxide particles. The structuring effects (Ordering and Stratifying).

Published in:

Protection of Metals, 2007, v. 43, n. 4, p. 321, doi. 10.1134/S0033173207040029

By:

Alekseev, Yu. V.;
Alekseev, I. Yu.

Publication type:

Article

EFFECT OF SILICON CARBIDE PASSIVATION FILM ON THE RESONANCE CHARACTERISTICS OF CANTILEVER.

Published in:

Integrated Ferroelectrics, 2007, v. 88, n. 1, p. 76, doi. 10.1080/10584580601099009

By:

Ki Yong Choi;
Dae Sung Yoon;
Tae Song Kim;
Duck Kyun Choi

Publication type:

Article

Improved Negative‐Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation Engineering.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 2, p. N.PAG, doi. 10.1002/pssr.201800493

By:

Cheng, Chun‐Hu;
Fan, Chia‐Chi;
Hsu, Hsiao‐Hsuan;
Wang, Shih‐An;
Chang, Chun‐Yen

Publication type:

Article

Efficient Charge Collection Promoted by Interface Passivation Using Amino Acid Toward High Performance Perovskite Solar Cells.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 2, p. N.PAG, doi. 10.1002/pssr.201800505

By:

Zhang, Wenwen;
Lei, Xiaoli;
Liu, Jihong;
Dong, Jun;
Yan, Xuewen;
Gao, Wei;
Dong, Hua;
Ran, Chenxin;
Wu, Zhaoxin

Publication type:

Article

On the passivity properties of a new family of repetitive (hyperbolic) controllers.

Published in:

International Journal of Control, 2008, v. 81, n. 9, p. 1424, doi. 10.1080/00207170701824163

By:

Hernandez-Briones, P. G.;
Escobar, G.;
Ortega, R.;
Hernandez-Gomez, M.

Publication type:

Article

Passivity-based robust feedback control for non-linear systems with input dynamical uncertainty.

Published in:

International Journal of Control, 2004, v. 77, n. 6, p. 517, doi. 10.1080/00207170410001682498

By:

Jiao, Xiaohong;
Shen, Tielong;
Tamura, Katsutoshi

Publication type:

Article

Corrosion-passivation processes in a cellular automata based simulation study.

Published in:

Journal of Supercomputing, 2013, v. 65, n. 2, p. 697, doi. 10.1007/s11227-013-0933-8

By:

Stafiej, Janusz;
Caprio, Dung;
Bartosik, Łukasz

Publication type:

Article

Brief Review of Surface Passivation on III-V Semiconductor.

Published in:

Crystals (2073-4352), 2018, v. 8, n. 5, p. 226, doi. 10.3390/cryst8050226

By:

Zhou, Lu;
Bo, Baoxue;
Yan, Xingzhen;
Wang, Chao;
Chi, Yaodan;
Yang, Xiaotian

Publication type:

Article

SELF-ASSEMBLY OF Si NANOSTRUCTURES IN SF6/O2 PLASMA.

Published in:

NANO (1793-2920), 2008, v. 3, n. 3, p. 169, doi. 10.1142/S179329200800099X

By:

YANG, CHENG;
RYU, SEUNG-HEON;
LIM, YEONG-DAE;
YOO, WON JONG

Publication type:

Article

Hybrid passivated colloidal quantum dot solids.

Published in:

Nature Nanotechnology, 2012, v. 7, n. 9, p. 577, doi. 10.1038/nnano.2012.127

By:

Ip, Alexander H.;
Thon, Susanna M.;
Hoogland, Sjoerd;
Voznyy, Oleksandr;
Zhitomirsky, David;
Debnath, Ratan;
Levina, Larissa;
Rollny, Lisa R.;
Carey, Graham H.;
Fischer, Armin;
Kemp, Kyle W.;
Kramer, Illan J.;
Ning, Zhijun;
Labelle, André J.;
Chou, Kang Wei;
Amassian, Aram;
Sargent, Edward H.

Publication type:

Article

Analysis of chemical shifts in Auger electron spectra versus sputtering time from passivated surfaces.

Published in:

Optica Applicata, 2011, v. 41, n. 2, p. 441

By:

DOMANOWSKA, ALINA;
ADAMOWICZ, BOGUSŁAWA;
BIDZINSKI, PIOTR;
KLIMASEK, ANDRZEJ;
SZEWCZENKO, JANUSZ;
GUTT, TOMASZ;
PRZEWŁOCKI, HENRYK

Publication type:

Article

Cu-Cu Hermetic Seal Enhancement Using Self-Assembled Monolayer Passivation.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 3, p. 502, doi. 10.1007/s11664-012-2353-6

By:

Lim, D.;
Fan, J.;
Peng, L.;
Leong, K.;
Tan, C.

Publication type:

Article

Thermomechanical Reliability Study of Benzocyclobutene Film in Wafer-Level Chip-Size Package.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 4, p. 706, doi. 10.1007/s11664-012-1944-6

By:

Lee, K.-O.

Publication type:

Article

Effects of Potential and Mechanical Stimulation on Oxidation of Tantalum During Electrochemical Mechanical Polishing.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 3, p. 624, doi. 10.1007/s11664-011-1832-5

By:

Gao, F.;
Liang, Hong

Publication type:

Article

Low-Pressure Chemical Vapor Deposition of CdS and Atomic Layer Deposition of CdTe Films for HgCdTe Surface Passivation.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1668, doi. 10.1007/s11664-011-1640-y

By:

Licausi, Nicholas;
Rao, Sunil;
Bhat, Ishwara

Publication type:

Article

Investigation of Trap States in AlInN/AlN/GaN Heterostructures by Frequency-Dependent Admittance Analysis.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 12, p. 2681, doi. 10.1007/s11664-010-1367-1

By:

Arslan, Engin;
Bütün, Serkan;
Şafak, Yasemin;
Ozbay, Ekmel

Publication type:

Article

Electrical and Optical Characterization of AlGaN/GaN HEMTs with In Situ and Ex Situ Deposited SiN Layers.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 11, p. 2452, doi. 10.1007/s11664-010-1343-9

By:

Tadjer, Marko;
Anderson, Travis;
Hobart, Karl;
Mastro, Michael;
Hite, Jennifer;
Caldwell, Joshua;
Picard, Yoosuf;
Kub, Fritz;
Eddy, Charles

Publication type:

Article

A Study of Sidewall Effects in HgCdTe Photoconductors Passivated with MBE-Grown CdTe.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1019, doi. 10.1007/s11664-010-1083-x

By:

Zhang, J.;
Tsen, G. K. O.;
Antoszewski, J.;
Dell, J. M.;
Faraone, L.;
Hu, W. D.

Publication type:

Article

Effective Surface Passivation of CdMnTe Materials.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1015, doi. 10.1007/s11664-010-1090-y

By:

Kim, K. H.;
Carcelén, V.;
Bolotnikov, A. E.;
Camarda, G. S.;
Gul, R.;
Hossain, A.;
Yang, G.;
Cui, Y.;
James, R. B.

Publication type:

Article

Evaluation of Surface Cleaning of Si(211) for Molecular-Beam Epitaxy Deposition of Infrared Detectors.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 951, doi. 10.1007/s11664-010-1152-1

By:

Jaime-Vasquez, M.;
Jacobs, R. N.;
Benson, J. D.;
Stoltz, A. J.;
Almeida, L. A.;
Bubulac, L. O.;
Chen, Y.;
Brill, G.

Publication type:

Article

Microstructural Characterization of CdTe Surface Passivation Layers.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 924, doi. 10.1007/s11664-010-1176-6

By:

Zhao, W. F.;
Cook, J.;
Parodos, T.;
Tobin, S.;
Smith, David

Publication type:

Article

Compositionally Graded Interface for Passivation of HgCdTe Photodiodes.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 10, p. 1793, doi. 10.1007/s11664-006-0159-0

By:

Pal, R.;
Malik, A.;
Srivastav, V.;
Sharma, B. L.;
Dhar, V.;
Sreedhar, B.;
Vyas, H. P.

Publication type:

Article

A Comparison of Gamma Radiation Effects on Bromine- and Hydrazine-Treated HgCdTe Photodiodes.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1429, doi. 10.1007/s11664-006-0279-6

By:

Min Yung Lee;
Young Ho Kim;
Nam Ho Lee;
Yong Soo Lee;
Hee Chul Lee

Publication type:

Article

Effects of Hydrogen on Majority Carrier Transport and Minority Carrier Lifetimes in Long-Wavelength Infrared HgCdTe on Si.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1385, doi. 10.1007/s11664-006-0272-0

By:

Boieriu, P.;
Grein, C. H.;
Garland, J.;
Velicu, S.;
Fulk, C.;
Stoltz, A.;
Bubulac, L.;
Dinan, J. H.;
Sivananthan, S.

Publication type:

Article

Cadmium Sulfide Passivation of InGaAs/InP Mesa p-i-n Photodiodes.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 11, p. 1368, doi. 10.1007/s11664-005-0192-4

By:

Teynor, W. A.;
Vaccaro, K.;
Buchwald, W. R.;
Dauplaise, H. M.;
Morath, C. P.;
Davis, A.;
Roland, M. A.;
Clark, W. R.

Publication type:

Article

Excess Si Atoms Near the Pyrolytic-Gas-Passivated Ultrathin Silicon Oxide/Si(100) Interface.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 7, p. 802, doi. 10.1007/s11664-004-0245-0

By:

Yamada, Hiroshi

Publication type:

Article

Influence of Layer Structure on Performance of AlGaN/GaN High Electron Mobility Transistors before and after Passivation.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 5, p. 436

By:

Bernát, J.;
Javorka, P.;
Fox, A.;
Marso, M.;
Kordoš, P.

Publication type:

Article

Similarity of optical properties of hydrides and semiconductors for antireflection coatings.

Published in:

Philosophical Magazine, 2010, v. 90, n. 21, p. 2925, doi. 10.1080/14786431003745294

By:

Karazhanov, S. Zh.;
Ulyashin, A. G.

Publication type:

Article

Corrosion monitoring of type 304L stainless steel in nuclear near-high level waste by electrochemical noise.

Published in:

Journal of Applied Electrochemistry, 2011, v. 41, n. 8, p. 973, doi. 10.1007/s10800-011-0324-x

By:

Suresh, Girija;
Kamachi Mudali, U.;
Baldev Raj

Publication type:

Article

Improvement of passivity of Fe- xCr Alloys ( x < 10%) by cycling through the reactivation potential.

Published in:

Journal of Applied Electrochemistry, 2011, v. 41, n. 7, p. 873, doi. 10.1007/s10800-011-0308-x

By:

Ulaganathan, Jaganathan;
Senior, Nick A.;
Newman, Roger C.

Publication type:

Article

Electrochemical behavior of AZ91D magnesium alloy in phosphate medium: Part II. Induced passivation.

Published in:

Journal of Applied Electrochemistry, 2009, v. 39, n. 9, p. 1633, doi. 10.1007/s10800-009-9849-7

By:

Heakal, Fakiha El-Taib;
Fekry, Amany Mohammed;
Fatayerji, Mohamad Ziad

Publication type:

Article