Works matching DE "INTEGRATED circuit passivation"

Results: 88

Corrosion inhibition of pure nickel by some phosphonium compounds in acid medium.

Published in:

Surface Engineering, 2005, v. 21, n. 3, p. 176, doi. 10.1179/174329405X49976

By:

Walia, Meetu;
Singh, Gurmeet

Publication type:

Article

Vitamins: potential inhibitors for nickel in acidic media.

Published in:

Surface Engineering, 2005, v. 21, n. 3, p. 187, doi. 10.1179/174329405X49994

By:

Malhotra, S.;
Singh, G.

Publication type:

Article

Grain boundary passivation by CdCl2 treatment in CdTe solar cells revealed by Kelvin probe force microscopy.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 24, p. 20718, doi. 10.1007/s10854-018-0212-9

By:

Li, Chuang;
Chen, Gang;
Wang, Wenwu;
Zhang, Jingquan;
Wu, Lili;
Hao, Xia;
Feng, Lianghuan

Publication type:

Article

Emitter passivation of silicon solar cell via organic coating at room temperature.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 12, p. 12459, doi. 10.1007/s10854-016-5706-8

By:

Shinde, Onkar;
Funde, Adinath;
Agarwal, Mohit;
Jadkar, Sandesh;
Mahamuni, Shailaja;
Dusane, Rajiv;
Dhere, Neelkanth;
Ghaisas, Subhash

Publication type:

Article

Electrochemical oscillations and bistability during anodic dissolution of vanadium electrode in acidic media-part I. Experiment.

Published in:

Journal of Solid State Electrochemistry, 2011, v. 15, n. 11/12, p. 2311, doi. 10.1007/s10008-011-1463-z

By:

Gorzkowski, Maciej;
Wesołowska, Aleksandra;
Jurczakowski, Rafał;
Ślepski, Paweł;
Darowicki, Kazimierz;
Orlik, Marek

Publication type:

Article

Electrochemical oscillations and bistability during anodic dissolution of vanadium electrode in acidic media-part II. The model.

Published in:

Journal of Solid State Electrochemistry, 2011, v. 15, n. 11/12, p. 2321, doi. 10.1007/s10008-011-1464-y

By:

Gorzkowski, Maciej;
Orlik, Marek

Publication type:

Article

Electrochemical performance of Mg-9Al-1Zn alloy in aqueous medium.

Published in:

Journal of Solid State Electrochemistry, 2011, v. 15, n. 1, p. 125, doi. 10.1007/s10008-010-1074-0

By:

Heakal, Fakiha El-Taib;
Fatayerji, M. Ziad

Publication type:

Article

51.3: A Mobility Enhancing Method Adopting A Multi-Active Layer Structure in Thin Film Transistors.

Published in:

SID Symposium Digest of Technical Papers, 2015, v. 46, n. 1, p. 772, doi. 10.1002/sdtp.10216

By:

Tsai, Ming‐Yen;
Chang, Ting‐Chang;
Chu, Ann‐Kuo;
Hsieh, Tien‐Yu;
Chen, Ching‐En;
Chen, Hua‐Mao;
Liao, Po‐Yung;
Chen, Bo‐Wei;
Yang, Yu‐Xin;
Chen, Kuo‐Kuang;
Shih, Tsung‐Hsiang;
Lu, Hsueh‐Hsing;
Huang, Hui‐Chun;
Gan, Der‐Shin

Publication type:

Article

25.1: Tri-Fold Flexible AMOLED with High Barrier Passivation Layers.

Published in:

SID Symposium Digest of Technical Papers, 2014, v. 45, n. 1, p. 322, doi. 10.1002/j.2168-0159.2014.tb00087.x

By:

Jimbo, Yasuhiro;
Aoyama, Tomoya;
Ohno, Naoto;
Eguchi, Shingo;
Kawashima, Susumu;
Ikeda, Hisao;
Hirakata, Yoshiharu;
Yamazaki, Shunpei;
Nakada, Masataka;
Sato, Masataka;
Yasumoto, Seiji;
Bower3, Chris;
Cotton, Darryl;
Matthews, Andrew;
Andrew, Piers;
Gheorghiu, Catalin;
Bergquist, Johan

Publication type:

Article

16.4: Photostability Improvement of a-InGaZnO TFTs by Introducing a Transparent UV Shielding Layer.

Published in:

2013

By:

Tsai, Min-Yen;
Tsai, Yun-Chu;
Teng, Li-Feng;
Liu, Po-Tsun;
Shieh, Han-Ping D.

Publication type:

Other

P.15: Influence of Photo-Thermal Pre-treatment on Electrical Characteristics and Reliability of Zn-Sn-O Thin-Film Transistors.

Published in:

2013

By:

Chen, Yu-Chun;
Chang, Ting-Chang;
Li, Hung-Wei;
Hsieh, Tien-Yu;
Chung, Wan-Fang

Publication type:

Other

Efficient Charge Collection Promoted by Interface Passivation Using Amino Acid Toward High Performance Perovskite Solar Cells.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 2, p. N.PAG, doi. 10.1002/pssr.201800505

By:

Zhang, Wenwen;
Lei, Xiaoli;
Liu, Jihong;
Dong, Jun;
Yan, Xuewen;
Gao, Wei;
Dong, Hua;
Ran, Chenxin;
Wu, Zhaoxin

Publication type:

Article

Improved Negative‐Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation Engineering.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 2, p. N.PAG, doi. 10.1002/pssr.201800493

By:

Cheng, Chun‐Hu;
Fan, Chia‐Chi;
Hsu, Hsiao‐Hsuan;
Wang, Shih‐An;
Chang, Chun‐Yen

Publication type:

Article

Analysis of chemical shifts in Auger electron spectra versus sputtering time from passivated surfaces.

Published in:

Optica Applicata, 2011, v. 41, n. 2, p. 441

By:

DOMANOWSKA, ALINA;
ADAMOWICZ, BOGUSŁAWA;
BIDZINSKI, PIOTR;
KLIMASEK, ANDRZEJ;
SZEWCZENKO, JANUSZ;
GUTT, TOMASZ;
PRZEWŁOCKI, HENRYK

Publication type:

Article

Corrosion-passivation processes in a cellular automata based simulation study.

Published in:

Journal of Supercomputing, 2013, v. 65, n. 2, p. 697, doi. 10.1007/s11227-013-0933-8

By:

Stafiej, Janusz;
Caprio, Dung;
Bartosik, Łukasz

Publication type:

Article

Passivation of HPGe detectors.

Published in:

Instruments & Experimental Techniques, 2009, v. 52, n. 1, p. 137, doi. 10.1134/S0020441209010230

By:

Gurov, Yu.;
Karpukhin, V.;
Rozov, S.;
Sandukovsky, V.;
Borowicz, D.;
Kwiatkowska, J.;
Rajchel, B.;
Yurkowski, J.

Publication type:

Article

Segmented high-purity germanium detectors.

Published in:

Instruments & Experimental Techniques, 2007, v. 50, n. 6, p. 757, doi. 10.1134/S0020441207060073

By:

Gurov, Yu.;
Gusev, K.;
Katulina, S.;
Sandukovsky, V.;
Borowicz, D.;
Yurkowski, J.

Publication type:

Article

Formation of microstructures on silicon surface in a fluorinated plasma via the cyclic etching-passivation process.

Published in:

High Energy Chemistry, 2008, v. 42, n. 2, p. 132, doi. 10.1134/S0018143908020136

By:

Amirov, I.;
Alov, N.

Publication type:

Article

Platinum passivation of self-assembled erbium disilicide nanowire arrays on Si(001).

Published in:

Applied Physics A: Materials Science & Processing, 2005, v. 80, n. 6, p. 1339, doi. 10.1007/s00339-004-3162-4

By:

Ragan, R.;
Kim, S.;
Li, X.;
Williams, R. Stanley

Publication type:

Article

Ab initio study of Ru-terminated and Ru-doped armchair graphene nanoribbons.

Published in:

Molecular Physics, 2012, v. 110, n. 18, p. 2295, doi. 10.1080/00268976.2012.678905

By:

Sarikavak-Lisesivdin, B.;
Lisesivdin, S.B.;
Ozbay, E.

Publication type:

Article

On the passivity properties of a new family of repetitive (hyperbolic) controllers.

Published in:

International Journal of Control, 2008, v. 81, n. 9, p. 1424, doi. 10.1080/00207170701824163

By:

Hernandez-Briones, P. G.;
Escobar, G.;
Ortega, R.;
Hernandez-Gomez, M.

Publication type:

Article

Passivity-based robust feedback control for non-linear systems with input dynamical uncertainty.

Published in:

International Journal of Control, 2004, v. 77, n. 6, p. 517, doi. 10.1080/00207170410001682498

By:

Jiao, Xiaohong;
Shen, Tielong;
Tamura, Katsutoshi

Publication type:

Article

Corrosion Behavior of Passivated 316LSS with Ag Coating as PEMFC Bipolar Plate.

Published in:

International Journal of Corrosion, 2011, p. 1, doi. 10.1155/2011/103785

By:

Naibao Huang;
Chenghao Liang;
Hongtao Wang;
Lishuang Xu;
Hongfeng Xu

Publication type:

Article

InGaN/GaN QDs Nanorods: Processing and Properties.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2096, doi. 10.1134/S1063782618160145

By:

Kotlyar, K. P.;
Soshnikov, I. P.;
Morozov, I. A.;
Berezovskaya, T. N.;
Kryzhanovskaya, N. V.;
Kudryashov, D. A.;
Lysak, V. V.

Publication type:

Article

Electrical passivation of the silicon surface by organic monolayers of 1-octadecene.

Published in:

Semiconductors, 2007, v. 41, n. 8, p. 991, doi. 10.1134/S1063782607080246

By:

Antonova, I. V.;
Soots, R. A.;
Seleznev, V. A.;
Prints, V. Ya.

Publication type:

Article

The effect of surface passivation on the intrinsic photoconductivity of gallium phosphide compensated with copper.

Published in:

Semiconductors, 2007, v. 41, n. 2, p. 159, doi. 10.1134/S106378260702008X

By:

Kozhevnikov, A. A.;
Pribylov, N. N.

Publication type:

Article

Aqueous slip casting and hydrolysis assisted solidification of MgAl2O4 spinel ceramics.

Published in:

Advances in Applied Ceramics: Structural, Functional & Bioceramics, 2011, v. 110, n. 2, p. 63, doi. 10.1179/174367610X12804792635260

By:

Ganesh, I;
Sundararajan, G;
Ferreira, J M F

Publication type:

Article

Cu-Cu Hermetic Seal Enhancement Using Self-Assembled Monolayer Passivation.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 3, p. 502, doi. 10.1007/s11664-012-2353-6

By:

Lim, D.;
Fan, J.;
Peng, L.;
Leong, K.;
Tan, C.

Publication type:

Article

Thermomechanical Reliability Study of Benzocyclobutene Film in Wafer-Level Chip-Size Package.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 4, p. 706, doi. 10.1007/s11664-012-1944-6

By:

Lee, K.-O.

Publication type:

Article

Effects of Potential and Mechanical Stimulation on Oxidation of Tantalum During Electrochemical Mechanical Polishing.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 3, p. 624, doi. 10.1007/s11664-011-1832-5

By:

Gao, F.;
Liang, Hong

Publication type:

Article

Low-Pressure Chemical Vapor Deposition of CdS and Atomic Layer Deposition of CdTe Films for HgCdTe Surface Passivation.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1668, doi. 10.1007/s11664-011-1640-y

By:

Licausi, Nicholas;
Rao, Sunil;
Bhat, Ishwara

Publication type:

Article

Investigation of Trap States in AlInN/AlN/GaN Heterostructures by Frequency-Dependent Admittance Analysis.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 12, p. 2681, doi. 10.1007/s11664-010-1367-1

By:

Arslan, Engin;
Bütün, Serkan;
Şafak, Yasemin;
Ozbay, Ekmel

Publication type:

Article

Electrical and Optical Characterization of AlGaN/GaN HEMTs with In Situ and Ex Situ Deposited SiN Layers.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 11, p. 2452, doi. 10.1007/s11664-010-1343-9

By:

Tadjer, Marko;
Anderson, Travis;
Hobart, Karl;
Mastro, Michael;
Hite, Jennifer;
Caldwell, Joshua;
Picard, Yoosuf;
Kub, Fritz;
Eddy, Charles

Publication type:

Article

A Study of Sidewall Effects in HgCdTe Photoconductors Passivated with MBE-Grown CdTe.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1019, doi. 10.1007/s11664-010-1083-x

By:

Zhang, J.;
Tsen, G. K. O.;
Antoszewski, J.;
Dell, J. M.;
Faraone, L.;
Hu, W. D.

Publication type:

Article

Effective Surface Passivation of CdMnTe Materials.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1015, doi. 10.1007/s11664-010-1090-y

By:

Kim, K. H.;
Carcelén, V.;
Bolotnikov, A. E.;
Camarda, G. S.;
Gul, R.;
Hossain, A.;
Yang, G.;
Cui, Y.;
James, R. B.

Publication type:

Article

Evaluation of Surface Cleaning of Si(211) for Molecular-Beam Epitaxy Deposition of Infrared Detectors.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 951, doi. 10.1007/s11664-010-1152-1

By:

Jaime-Vasquez, M.;
Jacobs, R. N.;
Benson, J. D.;
Stoltz, A. J.;
Almeida, L. A.;
Bubulac, L. O.;
Chen, Y.;
Brill, G.

Publication type:

Article

Microstructural Characterization of CdTe Surface Passivation Layers.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 7, p. 924, doi. 10.1007/s11664-010-1176-6

By:

Zhao, W. F.;
Cook, J.;
Parodos, T.;
Tobin, S.;
Smith, David

Publication type:

Article

Compositionally Graded Interface for Passivation of HgCdTe Photodiodes.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 10, p. 1793, doi. 10.1007/s11664-006-0159-0

By:

Pal, R.;
Malik, A.;
Srivastav, V.;
Sharma, B. L.;
Dhar, V.;
Sreedhar, B.;
Vyas, H. P.

Publication type:

Article

A Comparison of Gamma Radiation Effects on Bromine- and Hydrazine-Treated HgCdTe Photodiodes.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1429, doi. 10.1007/s11664-006-0279-6

By:

Min Yung Lee;
Young Ho Kim;
Nam Ho Lee;
Yong Soo Lee;
Hee Chul Lee

Publication type:

Article

Effects of Hydrogen on Majority Carrier Transport and Minority Carrier Lifetimes in Long-Wavelength Infrared HgCdTe on Si.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1385, doi. 10.1007/s11664-006-0272-0

By:

Boieriu, P.;
Grein, C. H.;
Garland, J.;
Velicu, S.;
Fulk, C.;
Stoltz, A.;
Bubulac, L.;
Dinan, J. H.;
Sivananthan, S.

Publication type:

Article

Cadmium Sulfide Passivation of InGaAs/InP Mesa p-i-n Photodiodes.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 11, p. 1368, doi. 10.1007/s11664-005-0192-4

By:

Teynor, W. A.;
Vaccaro, K.;
Buchwald, W. R.;
Dauplaise, H. M.;
Morath, C. P.;
Davis, A.;
Roland, M. A.;
Clark, W. R.

Publication type:

Article

Excess Si Atoms Near the Pyrolytic-Gas-Passivated Ultrathin Silicon Oxide/Si(100) Interface.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 7, p. 802, doi. 10.1007/s11664-004-0245-0

By:

Yamada, Hiroshi

Publication type:

Article

Influence of Layer Structure on Performance of AlGaN/GaN High Electron Mobility Transistors before and after Passivation.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 5, p. 436

By:

Bernát, J.;
Javorka, P.;
Fox, A.;
Marso, M.;
Kordoš, P.

Publication type:

Article

Similarity of optical properties of hydrides and semiconductors for antireflection coatings.

Published in:

Philosophical Magazine, 2010, v. 90, n. 21, p. 2925, doi. 10.1080/14786431003745294

By:

Karazhanov, S. Zh.;
Ulyashin, A. G.

Publication type:

Article

The SiNx passivation thickness effect on AlGaAs/InGaAs/GaAs pHEMT performance.

Published in:

Microwave & Optical Technology Letters, 2001, v. 29, n. 2, p. 81, doi. 10.1002/mop.1090

By:

Li Hongqin;
Sun Xiaowei;
Xia Guanqun

Publication type:

Article

Improved InGaAs/InP double-heterojunction bipolar transistors using a thin-emitter structure design.

Published in:

Microwave & Optical Technology Letters, 1999, v. 21, n. 4, p. 235, doi. 10.1002/(SICI)1098-2760(19990520)21:4<235::AID-MOP1>3.0.CO;2-W

By:

Driad, R.;
McKinnon, W. R.;
Laframboise, S.;
McAlister, S. P.

Publication type:

Article

Industrial high‐rate (∼5 nm/s) deposited silicon nitride yielding high‐quality bulk and surface passivation under optimum anti‐reflection coating conditions.

Published in:

Progress in Photovoltaics, 2005, v. 13, n. 8, p. 705, doi. 10.1002/pip.628

By:

B. Hoex;
A. J. M. van Erven;
R. C. M. Bosch;
W. T. M. Stals;
M. D. Bijker;
P. J. van den Oever;
W. M. M. Kessels;
M. C. M. van de Sanden

Publication type:

Article

Bulk Resistivity Optimization for Low-Bulk-Lifetime Silicon Solar Cells.

Published in:

Progress in Photovoltaics, 2001, v. 9, n. 4, p. 273, doi. 10.1002/pip.380

By:

Brody, Jed;
Rohatgi, Ajeet;
Yelundur, Vijay

Publication type:

Article

The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4 surface passivation.

Published in:

Applied Physics A: Materials Science & Processing, 2018, v. 124, n. 4, p. 1, doi. 10.1007/s00339-018-1702-6

By:

Fu, Chen;
Lin, Zhaojun;
Cui, Peng;
Lv, Yuanjie;
Zhou, Yang;
Dai, Gang;
Luan, Chongbiao;
Liu, Huan;
Cheng, Aijie

Publication type:

Article

Efficient Low-Cost IBC Solar Cells with a Front Floating Emitter: Structure Optimization and Passivation Layer Study.

Published in:

Energies (19961073), 2018, v. 11, n. 4, p. 939, doi. 10.3390/en11040939

By:

Dong, Peng;
Zhang, Yuming;
Guo, Hui;
Zhang, Chenxu;
Ma, Jikui;
Qu, Xiaoyong;
Zhang, Chunfu

Publication type:

Article