Works matching DE "INTEGRATED circuit passivation"
Results: 87
Vitamins: potential inhibitors for nickel in acidic media.
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- Surface Engineering, 2005, v. 21, n. 3, p. 187, doi. 10.1179/174329405X49994
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- Article
Corrosion inhibition of pure nickel by some phosphonium compounds in acid medium.
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- Surface Engineering, 2005, v. 21, n. 3, p. 176, doi. 10.1179/174329405X49976
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- Article
Passivating film as a structured solid solution of the alloy oxide particles. The structuring effects (Ordering and Stratifying).
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- Protection of Metals, 2007, v. 43, n. 4, p. 321, doi. 10.1134/S0033173207040029
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- Article
Industrial high‐rate (∼5 nm/s) deposited silicon nitride yielding high‐quality bulk and surface passivation under optimum anti‐reflection coating conditions.
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- Progress in Photovoltaics, 2005, v. 13, n. 8, p. 705, doi. 10.1002/pip.628
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Bulk Resistivity Optimization for Low-Bulk-Lifetime Silicon Solar Cells.
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- Progress in Photovoltaics, 2001, v. 9, n. 4, p. 273, doi. 10.1002/pip.380
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- Article
Ab initio study of Ru-terminated and Ru-doped armchair graphene nanoribbons.
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- Molecular Physics, 2012, v. 110, n. 18, p. 2295, doi. 10.1080/00268976.2012.678905
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On the passivity properties of a new family of repetitive (hyperbolic) controllers.
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- International Journal of Control, 2008, v. 81, n. 9, p. 1424, doi. 10.1080/00207170701824163
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Passivity-based robust feedback control for non-linear systems with input dynamical uncertainty.
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- International Journal of Control, 2004, v. 77, n. 6, p. 517, doi. 10.1080/00207170410001682498
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- Article
Corrosion Behavior of Passivated 316LSS with Ag Coating as PEMFC Bipolar Plate.
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- International Journal of Corrosion, 2011, p. 1, doi. 10.1155/2011/103785
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Analysis of chemical shifts in Auger electron spectra versus sputtering time from passivated surfaces.
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- Optica Applicata, 2011, v. 41, n. 2, p. 441
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Push-Push Oscillators Operating at G-Band Using InP DHBT Technology.
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- Microwave Journal, 2018, v. 61, n. 9, p. 66
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Compositionally Graded Interface for Passivation of HgCdTe Photodiodes.
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- Journal of Electronic Materials, 2006, v. 35, n. 10, p. 1793, doi. 10.1007/s11664-006-0159-0
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- Article
A Comparison of Gamma Radiation Effects on Bromine- and Hydrazine-Treated HgCdTe Photodiodes.
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- Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1429, doi. 10.1007/s11664-006-0279-6
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- Article
Effects of Hydrogen on Majority Carrier Transport and Minority Carrier Lifetimes in Long-Wavelength Infrared HgCdTe on Si.
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- Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1385, doi. 10.1007/s11664-006-0272-0
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- Article
Cadmium Sulfide Passivation of InGaAs/InP Mesa p-i-n Photodiodes.
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- Journal of Electronic Materials, 2005, v. 34, n. 11, p. 1368, doi. 10.1007/s11664-005-0192-4
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- Article
Excess Si Atoms Near the Pyrolytic-Gas-Passivated Ultrathin Silicon Oxide/Si(100) Interface.
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- Journal of Electronic Materials, 2004, v. 33, n. 7, p. 802, doi. 10.1007/s11664-004-0245-0
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Influence of Layer Structure on Performance of AlGaN/GaN High Electron Mobility Transistors before and after Passivation.
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- Journal of Electronic Materials, 2004, v. 33, n. 5, p. 436
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- Article
UV-induced degradation of PERC solar modules with UV-transparent encapsulation materials.
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- Progress in Photovoltaics, 2017, v. 25, n. 6, p. 409, doi. 10.1002/pip.2861
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- Article
High‐Performance n‐ and p‐Type Field‐Effect Transistors Based on Hybridly Surface‐Passivated Colloidal PbS Nanosheets.
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- Advanced Functional Materials, 2018, v. 28, n. 19, p. 1, doi. 10.1002/adfm.201706815
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- Article
The SiN<sub>x</sub> passivation thickness effect on AlGaAs/InGaAs/GaAs pHEMT performance.
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- Microwave & Optical Technology Letters, 2001, v. 29, n. 2, p. 81, doi. 10.1002/mop.1090
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- Article
Improved InGaAs/InP double-heterojunction bipolar transistors using a thin-emitter structure design.
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- Microwave & Optical Technology Letters, 1999, v. 21, n. 4, p. 235, doi. 10.1002/(SICI)1098-2760(19990520)21:4<235::AID-MOP1>3.0.CO;2-W
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Passivation of HPGe detectors.
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- Instruments & Experimental Techniques, 2009, v. 52, n. 1, p. 137, doi. 10.1134/S0020441209010230
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Segmented high-purity germanium detectors.
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- Instruments & Experimental Techniques, 2007, v. 50, n. 6, p. 757, doi. 10.1134/S0020441207060073
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- Article
51.3: A Mobility Enhancing Method Adopting A Multi-Active Layer Structure in Thin Film Transistors.
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- SID Symposium Digest of Technical Papers, 2015, v. 46, n. 1, p. 772, doi. 10.1002/sdtp.10216
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- Article
25.1: Tri-Fold Flexible AMOLED with High Barrier Passivation Layers.
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- SID Symposium Digest of Technical Papers, 2014, v. 45, n. 1, p. 322, doi. 10.1002/j.2168-0159.2014.tb00087.x
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16.4: Photostability Improvement of a-InGaZnO TFTs by Introducing a Transparent UV Shielding Layer.
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- 2013
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- Other
P.15: Influence of Photo-Thermal Pre-treatment on Electrical Characteristics and Reliability of Zn-Sn-O Thin-Film Transistors.
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- 2013
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- Other
Graphene/Si CMOS Hybrid Hall Integrated Circuits.
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- Scientific Reports, 2014, p. 1, doi. 10.1038/srep05548
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Interface Passivation Effects on the Photovoltaic Performance of Quantum Dot Sensitized Inverse Opal TiO<sub>2</sub> Solar Cells.
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- Nanomaterials (2079-4991), 2018, v. 8, n. 7, p. 460, doi. 10.3390/nano8070460
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Hybrid passivated colloidal quantum dot solids.
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- Nature Nanotechnology, 2012, v. 7, n. 9, p. 577, doi. 10.1038/nnano.2012.127
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- Article
InGaN/GaN QDs Nanorods: Processing and Properties.
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- Semiconductors, 2018, v. 52, n. 16, p. 2096, doi. 10.1134/S1063782618160145
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- Article
Grain boundary passivation by CdCl<sub>2</sub> treatment in CdTe solar cells revealed by Kelvin probe force microscopy.
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- Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 24, p. 20718, doi. 10.1007/s10854-018-0212-9
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Emitter passivation of silicon solar cell via organic coating at room temperature.
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- Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 12, p. 12459, doi. 10.1007/s10854-016-5706-8
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- Article
Corrosion monitoring of type 304L stainless steel in nuclear near-high level waste by electrochemical noise.
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- Journal of Applied Electrochemistry, 2011, v. 41, n. 8, p. 973, doi. 10.1007/s10800-011-0324-x
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- Article
Improvement of passivity of Fe- xCr Alloys ( x < 10%) by cycling through the reactivation potential.
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- Journal of Applied Electrochemistry, 2011, v. 41, n. 7, p. 873, doi. 10.1007/s10800-011-0308-x
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Electrochemical behavior of AZ91D magnesium alloy in phosphate medium: Part II. Induced passivation.
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- Journal of Applied Electrochemistry, 2009, v. 39, n. 9, p. 1633, doi. 10.1007/s10800-009-9849-7
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Effect of alternating voltage passivation on the corrosion resistance of duplex stainless steel.
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- Journal of Applied Electrochemistry, 2009, v. 39, n. 5, p. 737, doi. 10.1007/s10800-008-9718-9
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- Article
TEMPERATURE DEPENDENCE OF MICROELECTRONIC DEVICE FAILURES.
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- Quality & Reliability Engineering International, 1990, v. 6, n. 4, p. 275, doi. 10.1002/qre.4680060410
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- Article
Electrochemical oscillations and bistability during anodic dissolution of vanadium electrode in acidic media-part I. Experiment.
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- Journal of Solid State Electrochemistry, 2011, v. 15, n. 11/12, p. 2311, doi. 10.1007/s10008-011-1463-z
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- Article
Electrochemical oscillations and bistability during anodic dissolution of vanadium electrode in acidic media-part II. The model.
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- Journal of Solid State Electrochemistry, 2011, v. 15, n. 11/12, p. 2321, doi. 10.1007/s10008-011-1464-y
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- Article
Electrochemical performance of Mg-9Al-1Zn alloy in aqueous medium.
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- Journal of Solid State Electrochemistry, 2011, v. 15, n. 1, p. 125, doi. 10.1007/s10008-010-1074-0
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- Article
Adhesion between an underfill and the passivation layer in flip-chip packaging.
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- Journal of Adhesion Science & Technology, 2004, v. 18, n. 2, p. 275, doi. 10.1163/156856104772759467
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- Article
Efficient Charge Collection Promoted by Interface Passivation Using Amino Acid Toward High Performance Perovskite Solar Cells.
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- Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 2, p. N.PAG, doi. 10.1002/pssr.201800505
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- Article
Improved Negative‐Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation Engineering.
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- Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 2, p. N.PAG, doi. 10.1002/pssr.201800493
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- Article
Fabrication of single diffusion step selective-emitter solar cells.
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- Photovoltaics International, 2010, n. 10, p. 65
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- Article
Influence of a-Si:H deposition temperature on thermal stability of a-Si:H/SiN<sub>x</sub>:H stacks.
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- Photovoltaics International, 2010, n. 10, p. 80
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- Article
Flexible GIGS thin-film PV establishes module manufacturing base, moves closer to BIPV market readiness.
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- Photovoltaics International, 2009, n. 4, p. 93
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PECVD a-Si layers for industrial high- efficiency solar cell processing.
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- Photovoltaics International, 2009, n. 4, p. 68
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- Article
Impact of stress in ICP-CVD SiNx passivation films on the leakage current in AlGaN/GaN HEMTs.
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- Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 15, p. 947, doi. 10.1049/el.2018.1097
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- Article
High f<sub>T</sub> and f<sub>MAX</sub> for 100 nm unpassivated rectangular gate AlGaN/GaN HEMT on high resistive silicon (111) substrate.
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- Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 17, p. 1366, doi. 10.1049/el.2015.1395
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- Article