Loss Characteristics of 6.5 kV RC-IGBT Applied to a Traction Converter.
- Published in:
- Energies (19961073), 2017, v. 10, n. 7, p. 891, doi. 10.3390/en10070891
- By:
- Publication type:
- Article
Works matching DE "INSULATED gate field effect transistors"
Results: 2
1
2
Evaluation of Anisotropic Biaxial Stress Induced Around Trench Gate of Si Power Transistor Using Water-Immersion Raman Spectroscopy.
- Published in:
- Journal of Electronic Materials, 2018, v. 47, n. 9, p. 5050, doi. 10.1007/s11664-018-6318-2
- By:
- Publication type:
- Article