Works matching DE "INSULATED gate bipolar transistors"
Results: 460
A data-driven approach for IGBT aging degree evaluation based on multi-observation sequence particle filtering and support vector regression.
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- Mechanics of Advanced Materials & Structures, 2025, v. 32, n. 5, p. 765, doi. 10.1080/15376494.2024.2355371
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Analysis of MMC Circulation Phase Sequence Separation and Research on Flexible Sliding Mode Circulation Suppression Method.
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- Energies (19961073), 2025, v. 18, n. 4, p. 960, doi. 10.3390/en18040960
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Dynamic Performance Evaluation of Bidirectional Bridgeless Interleaved Totem-Pole Power Factor Correction Boost Converter.
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- Micromachines, 2025, v. 16, n. 2, p. 223, doi. 10.3390/mi16020223
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Research on Deflection and Stress Analyses and the Improvement of the Removal Uniformity of Silicon in a Single-Sided Polishing Machine Under Pressure.
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- Micromachines, 2025, v. 16, n. 2, p. 198, doi. 10.3390/mi16020198
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Research Progress on Insulated Gate Bipolar Transistor (IGBT) Modules.
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- Micromachines, 2025, v. 16, n. 2, p. 197, doi. 10.3390/mi16020197
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Aging monitoring method for IGBT module based on conduction voltage drop in bridge‐arm short‐circuit.
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- IET Power Electronics (Wiley-Blackwell), 2024, v. 17, n. 16, p. 2842, doi. 10.1049/pel2.12825
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A review of silicon carbide MOSFETs in electrified vehicles: Application, challenges, and future development.
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- IET Power Electronics (Wiley-Blackwell), 2023, v. 16, n. 12, p. 2103, doi. 10.1049/pel2.12524
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A novel integrated monitoring method for MPPF capacitor and IGBT junction temperature of half‐bridge modules.
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- IET Power Electronics (Wiley-Blackwell), 2023, v. 16, n. 12, p. 2034, doi. 10.1049/pel2.12523
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Overview of monitoring methods of press‐pack insulated gate bipolar transistor modules under different package failure modes.
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- IET Power Electronics (Wiley-Blackwell), 2023, v. 16, n. 4, p. 683, doi. 10.1049/pel2.12407
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Analysis of time‐frequency characteristic parameters of electromagnetic interference sources in the basic commutation unit.
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- IET Power Electronics (Wiley-Blackwell), 2023, v. 16, n. 4, p. 531, doi. 10.1049/pel2.12403
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Fast diagnosis strategy for open‐circuit fault of switch devices in open‐winding PMSM system based on voltage error estimation.
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- IET Power Electronics (Wiley-Blackwell), 2023, v. 16, n. 3, p. 423, doi. 10.1049/pel2.12394
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Online correction method of IGBT lifetime evaluation based on bonding wire failure monitoring.
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- IET Power Electronics (Wiley-Blackwell), 2023, v. 16, n. 3, p. 347, doi. 10.1049/pel2.12387
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Differential mode noise modelling and analysis through high‐frequency equivalent circuit of a single‐phase inverter.
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- IET Power Electronics (Wiley-Blackwell), 2022, v. 15, n. 15, p. 1675, doi. 10.1049/pel2.12336
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Analysis on characteristic of 3.3‐kV full SiC device and railway traction converter design.
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- IET Power Electronics (Wiley-Blackwell), 2022, v. 15, n. 10, p. 978, doi. 10.1049/pel2.12280
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A four‐step control for IGBT switching improvement using an active voltage gate driver.
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- IET Power Electronics (Wiley-Blackwell), 2022, v. 15, n. 6, p. 548, doi. 10.1049/pel2.12248
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Equivalent temperature estimation‐based FCS‐MPC for thermal stress balance of 3L‐NPC traction inverter.
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- IET Power Electronics (Wiley-Blackwell), 2021, v. 14, n. 14, p. 2314, doi. 10.1049/pel2.12182
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Modelling and solving of IGBT's transient analysis model based on the finite state machine.
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- IET Power Electronics (Wiley-Blackwell), 2021, v. 14, n. 11, p. 1973, doi. 10.1049/pel2.12163
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Failure analysis and lifetime assessment of IGBT power modules at low temperature stress cycles.
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- IET Power Electronics (Wiley-Blackwell), 2021, v. 14, n. 7, p. 1271, doi. 10.1049/pel2.12083
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Short circuit detection and driving control with no blanking time for high voltage high power insulated gate bipolar transistors.
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- IET Power Electronics (Wiley-Blackwell), 2021, v. 14, n. 6, p. 1138, doi. 10.1049/pel2.12097
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DC–DC converter concept allowing line commutated converters and voltage source converters based HVDC systems connectivity.
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- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 15, p. 3294, doi. 10.1049/iet-pel.2020.0054
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Repeater coil-based wireless power transfer system powering multiple gate drivers of series-connected IGBTs.
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- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 9, p. 1722, doi. 10.1049/iet-pel.2019.0982
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Long-distance wireless power transfer system powering multiple loads with constant voltage outputs using S-SP compensation.
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- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 9, p. 1729, doi. 10.1049/iet-pel.2019.0880
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Design of a gate driver for SiC MOSFET module for applications up to 1200 V.
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- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 7, p. 1364, doi. 10.1049/iet-pel.2019.0422
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Fault diagnosis for open-circuit faults in NPC inverter based on knowledge-driven and datadriven approaches.
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- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 6, p. 1236, doi. 10.1049/iet-pel.2019.0835
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Hybrid 3.3 kV/450 A half-bridge IGBT power module with SiC Schottky barrier diodes.
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- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 405, doi. 10.1049/iet-pel.2019.0412
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Recent advances and trend of HEV/EVoriented power semiconductors - an overview.
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- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 394, doi. 10.1049/iet-pel.2019.0401
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Fabrication of IGBTs using 300 mm magnetic Czochralski substrates.
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- IET Power Electronics (Wiley-Blackwell), 2019, v. 12, n. 15, p. 1, doi. 10.1049/iet-pel.2019.0444
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Al modification as indicator of current filaments in IGBTs under repetitive SC operation.
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- IET Power Electronics (Wiley-Blackwell), 2019, v. 12, n. 15, p. 1, doi. 10.1049/iet-pel.2019.0125
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Soft-punch-through buffer concept for 600-1200 V IGBTs.
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- IET Power Electronics (Wiley-Blackwell), 2019, v. 12, n. 15, p. 1, doi. 10.1049/iet-pel.2019.0124
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Mixed model-based and signal-based approach for open-switches fault diagnostic in sensorless speed vector controlled induction motor drive using sliding mode observer.
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- IET Power Electronics (Wiley-Blackwell), 2019, v. 12, n. 5, p. 1149, doi. 10.1049/iet-pel.2018.5131
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Detection and identification of multiple IGBT open-circuit faults in PWM inverters for AC machine drives.
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- IET Power Electronics (Wiley-Blackwell), 2019, v. 12, n. 4, p. 923, doi. 10.1049/iet-pel.2018.5188
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Performance comparison of Si IGBT and SiC MOSFET power devices based LCL threephase inverter with double closed-loop control.
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- IET Power Electronics (Wiley-Blackwell), 2019, v. 12, n. 2, p. 322, doi. 10.1049/iet-pel.2018.5702
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Research on novel hybrid multilevel inverter with cascaded H-bridges at alternating current side for high-voltage direct current transmission.
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- IET Power Electronics (Wiley-Blackwell), 2018, v. 11, n. 12, p. 1, doi. 10.1049/iet-pel.2017.0925
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Minimum resonant capacitor design of high-power LLC resonant converter for comprehensive efficiency improvement in battery charging application.
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- IET Power Electronics (Wiley-Blackwell), 2018, v. 11, n. 11, p. 1, doi. 10.1049/iet-pel.2017.0649
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Non-linear behavioural modelling of device-level transients for complex power electronic converter circuit hardware realisation on FPGA.
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- IET Power Electronics (Wiley-Blackwell), 2018, v. 11, n. 9, p. 1, doi. 10.1049/iet-pel.2017.0212
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Modified hybrid modulation strategy with power balance control for H-bridge hybrid cascaded seven-level inverter.
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- IET Power Electronics (Wiley-Blackwell), 2018, v. 11, n. 6, p. 1046, doi. 10.1049/iet-pel.2017.0558
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Gate driver for high power SiC modules: design considerations, development and experimental validation.
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- IET Power Electronics (Wiley-Blackwell), 2018, v. 11, n. 6, p. 977, doi. 10.1049/iet-pel.2017.0535
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Analysis of the fault current limiting requirement and design of the bridge-type FCL in the multi-terminal DC grid.
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- IET Power Electronics (Wiley-Blackwell), 2018, v. 11, n. 6, p. 968, doi. 10.1049/iet-pel.2017.0493
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Progress in IGBT development.
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- IET Power Electronics (Wiley-Blackwell), 2018, v. 11, n. 4, p. 646, doi. 10.1049/iet-pel.2017.0499
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Snap-back free shorted-anode super-junction TCIGBT.
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- IET Power Electronics (Wiley-Blackwell), 2018, v. 11, n. 4, p. 654, doi. 10.1049/iet-pel.2017.0407
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Junction temperature estimation of IGBT module via a bond wires lift-off independent parameter V<sub>gE-np</sub>.
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- IET Power Electronics (Wiley-Blackwell), 2018, v. 11, n. 2, p. 320, doi. 10.1049/iet-pel.2017.0168
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New improved three-phase hybrid multilevel inverter with reduced number of components.
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- IET Power Electronics (Wiley-Blackwell), 2017, v. 10, n. 12, p. 1403, doi. 10.1049/iet-pel.2016.0594
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Current limiting soft starter for three phase induction motor drive system using PWM AC chopper.
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- IET Power Electronics (Wiley-Blackwell), 2017, v. 10, n. 11, p. 1298, doi. 10.1049/iet-pel.2016.0762
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Experimental Comparison of High-Speed Gate Driver Design for 1.2-kV/120-A Si IGBT and SiC MOSFET Modules.
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- IET Power Electronics (Wiley-Blackwell), 2017, v. 10, n. 9, p. 979, doi. 10.1049/iet-pel.2016.0668
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Design methodology for very high insulation voltage capabilities power transmission function for IGBT gate drivers based on a virtual prototyping tool.
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- IET Power Electronics (Wiley-Blackwell), 2017, v. 10, n. 5, p. 545, doi. 10.1049/iet-pel.2016.0333
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Investigation of the trade-off between switching losses and EMI generation in Gaussian S-shaping for high-power IGBT switching transients by active voltage control.
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- IET Power Electronics (Wiley-Blackwell), 2016, v. 9, n. 9, p. 1979, doi. 10.1049/iet-pel.2015.1035
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Forward-type resonant bidirectional DC-DC converter.
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- IET Power Electronics (Wiley-Blackwell), 2016, v. 9, n. 8, p. 1753, doi. 10.1049/iet-pel.2015.0975
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Development of a 20 kV damped oscillating voltage generator.
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- IET Power Electronics (Wiley-Blackwell), 2016, v. 9, n. 4, p. 680, doi. 10.1049/iet-pel.2015.0021
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Operation and control of an insulated gate bipolar transistor-based current controlling device for power flow applications in multiterminal high-voltage direct current grids.
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- IET Power Electronics (Wiley-Blackwell), 2016, v. 9, n. 2, p. 305, doi. 10.1049/iet-pel.2015.0525
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Electrical method to measure the transient thermal impedance of insulated gate bipolar transistor module.
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- IET Power Electronics (Wiley-Blackwell), 2015, v. 8, n. 6, p. 1009, doi. 10.1049/iet-pel.2014.0120
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