Works matching DE "INDIUM phosphide"

Results: 373

Thermo-Phototronic Effect Enhanced InP/ZnO Nanorod Heterojunction Solar Cells for Self-Powered Wearable Electronics.

Published in:

Advanced Functional Materials, 2017, v. 27, n. 38, p. n/a, doi. 10.1002/adfm.201703331

By:

Zhang, Kewei;
Yang, Ya

Publication type:

Article

Antimony Induced {112}A Faceted Triangular GaAs1− xSb x/InP Core/Shell Nanowires and Their Enhanced Optical Quality.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 33, p. 5300, doi. 10.1002/adfm.201501467

By:

Yuan, Xiaoming;
Caroff, Philippe;
Wang, Fan;
Guo, Yanan;
Wang, Yuda;
Jackson, Howard E.;
Smith, Leigh M.;
Tan, Hark Hoe;
Jagadish, Chennupati

Publication type:

Article

Efficient green indium phosphide quantum dots with tris(dimethylamino)-phosphine phosphorus precursor for electroluminescent devices.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 4, p. 4686, doi. 10.1007/s10854-020-05206-5

By:

Jiang, Wei;
Choi, Yonghyeok;
Chae, Heeyeop

Publication type:

Article

Influence of melt convection on distribution of indium inclusions in liquid-encapsulated Czochralski-grown indium phosphide crystals.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 22, p. 20160, doi. 10.1007/s10854-020-04537-7

By:

Chen, Chunmei;
Yang, Ruixia;
Sun, Niefeng;
Wang, Shujie;
Fu, Lijie;
Wang, Yang;
Tian, Shusheng;
Huang, Zipeng;
Sun, Tongnian;
Liu, Huisheng;
Shi, Yanlei;
Li, Xiaolan;
Shao, Huimin

Publication type:

Article

Electronic properties and lateral inhomogeneous barrier heights of n-InP rods/p-Si heterojunction prepared by liquid phase epitaxy.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 14, p. 10488, doi. 10.1007/s10854-017-6822-9

By:

El-Menyawy, E.;
Ashery, A.;
El-Nahass, M.

Publication type:

Article

Characteristics of InP on GaAs substrate using Zn-doped Al(Ga)InAs metamorphic buffers.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 13, p. 9732, doi. 10.1007/s10854-017-6724-x

By:

He, Yang;
Sun, Yurun;
Zhao, Yongming;
Yu, Shuzhen;
Dong, Jianrong

Publication type:

Article

Raman spectroscopy of indium phosphide nanowire networks coated with gold clusters.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 11, p. 4867, doi. 10.1007/s10854-014-2245-z

By:

Zhang, Junce;
Fryauf, David;
Norris, Kate;
Diaz Leon, Juan;
Kobayashi, Nobuhiko;
Wei, Min

Publication type:

Article

Growth and characterization of indium phosphide nanowires on transparent conductive ZnO:Al films.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 10, p. 4444, doi. 10.1007/s10854-014-2186-6

By:

Wei, Min;
Zhang, Junce;
Fryauf, David;
Diaz Leon, Juan;
Norris, Kate;
Deng, Hong;
Wen, Guangjun;
Wang, Shih-Yuan;
Kobayashi, Nobuhiko

Publication type:

Article

Melt-conditioned vertical gradient freeze (MCVGF) to increase growth speed and process efficiency: a modelling approach.

Published in:

International Journal of Advanced Manufacturing Technology, 2023, v. 128, n. 11/12, p. 5613, doi. 10.1007/s00170-023-12277-1

By:

Dezfoli, Amir Reza Ansari

Publication type:

Article

Synthesis of super bright indium phosphide colloidal quantum dots through thermal diffusion.

Published in:

Communications Chemistry, 2019, v. 2, n. 1, p. N.PAG, doi. 10.1038/s42004-019-0138-z

By:

Clarke, Mitchell T.;
Viscomi, Francesco Narda;
Chamberlain, Thomas W.;
Hondow, Nicole;
Adawi, Ali M.;
Sturge, Justin;
Erwin, Steven C.;
Bouillard, Jean-Sebastien G.;
Tamang, Sudarsan;
Stasiuk, Graeme J.

Publication type:

Article

Numerical simulation and performance measure of highly efficient GaP/InP/Si multi-junction solar cell.

Published in:

International Journal of Energy Research, 2017, v. 41, n. 8, p. 1211, doi. 10.1002/er.3708

By:

Sathya, P.;
Natarajan, R.

Publication type:

Article

Dynamics and noise of fiber-grating semiconductor lasers affected by the line-width enhancement factor.

Published in:

Turkish Journal of Physics, 2012, v. 36, n. 2, p. 225, doi. 10.3906/fiz-1105-5

By:

Abdulrhmann, Salah

Publication type:

Article

Characterization and Modeling of DHBT in InP/GaAsSb Technology for the Design and Fabrication of a Ka Band MMIC Oscillator.

Published in:

Active & Passive Electronic Components, 2012, p. 1, doi. 10.1155/2012/796973

By:

Laurent, S.;
Nallatamby, J. C.;
Prigent, M.;
Riet, M.;
Nodjiadjim, V.

Publication type:

Article

DIRECT GROWTH OF HIGH-QUALITY InP LAYERS ON GaAs SUBSTRATES BY MOCVD.

Published in:

Active & Passive Electronic Components, 2003, v. 26, n. 2, p. 71, doi. 10.1080/0882751031000073797

By:

Yarn, K.F.;
Chien, W.C.;
Lin, C.L.;
Liao, C.I.

Publication type:

Article

Design of a Novel Broadband Antenna for Photomixer Chips in the Terahertz Frequency Range.

Published in:

Photonics, 2023, v. 10, n. 12, p. 1321, doi. 10.3390/photonics10121321

By:

Chu, Yimiao;
Han, Qin;
Ye, Han;
Wang, Shuai;
Zheng, Yu;
Geng, Liyan

Publication type:

Article

InP-Components for 100 GBaud Optical Data Center Communication.

Published in:

Photonics, 2021, v. 8, n. 1, p. 18, doi. 10.3390/photonics8010018

By:

Runge, Patrick;
Beckerwerth, Tobias;
Troppenz, Ute;
Gruner, Marko;
Boerma, Hendrik;
Möhrle, Martin;
Schell, Martin

Publication type:

Article

Spin-orbit interaction in the magnetization of two-dimensional electron systems.

Published in:

Physica Status Solidi (B), 2014, v. 251, n. 9, p. 1710, doi. 10.1002/pssb.201350203

By:

Wilde, M. A.;
Rupprecht, B.;
Herzog, F.;
Ibrahim, A.;
Grundler, D.

Publication type:

Article

System test of an optoelectronic gyroscope based on a high Q-factor InP ring resonator.

Published in:

Optical Engineering, 2014, v. 53, n. 12, p. 1, doi. 10.1117/1.OE.53.12.127104

By:

Dell'Olio, Francesco;
Indiveri, Fabrizio;
Innone, Filomena;
Dello Russo, Pasquale;
Ciminelli, Caterina;
Armenise, Mario N.

Publication type:

Article

Cross-slip in GaAs and InP at elevated temperatures.

Published in:

Philosophical Magazine Letters, 2000, v. 80, n. 8, p. 511, doi. 10.1080/09500830050110431

By:

Yonenaga, I.;
Suzuki, T.

Publication type:

Article

On analysis of heat of formation and entropy measures for indium phosphide.

Published in:

Arabian Journal of Chemistry, 2022, v. 15, n. 11, p. N.PAG, doi. 10.1016/j.arabjc.2022.104218

By:

Imran, Muhammad;
Siddiqui, Muhammad Kamran;
Javed, Sana;
Sherin, Lubna;
Khalid, Sadia;
Asghar, Waqar

Publication type:

Article

A Review of Polarization Dependence Applications for Asymmetric Waveguides Vertical Couplers in Compound Semiconductor Indium Phosphide.

Published in:

International Journal of Optics, 2011, p. 1, doi. 10.1155/2011/164023

By:

Chee-Wei Lee

Publication type:

Article

High-Speed Room Temperature Terahertz Detectors Based on InP Double Heterojunction Bipolar Transistors.

Published in:

International Journal of High Speed Electronics & Systems, 2016, v. 25, n. 3/4, p. -1, doi. 10.1142/S0129156416400115

By:

Coquillat, D.;
Nodjiadjim, V.;
Blin, S.;
Konczykowska, A.;
Dyakonova, N.;
Consejo, C.;
Nouvel, P.;
Pènarier, A.;
Torres, J.;
But, D.;
Ruffenach, S.;
Teppe, F.;
Riet, M.;
Muraviev, A.;
Gutin, A.;
Shur, M.;
Knap, W.

Publication type:

Article

40 Gb/s TDM SYSTEM TRANSCEIVER PROTOTYPE IN InP HBT TECHNOLOGY.

Published in:

International Journal of High Speed Electronics & Systems, 2005, v. 15, n. 3, p. 643, doi. 10.1142/S0129156405003375

By:

KRISHNAMURTHY, KARTHIKEYAN;
XU, JIAN;
SHOU, XIAOQIANG;
VETURY, RAMAKRISHNA;
JAGANATHAN, SHRINIVASAN;
LIU, YET-ZEN;
PULLELA, RAJA;
YU, RUAI;
RODWELL, MARK J. W.

Publication type:

Article

BENCHMARK RESULTS FOR HIGH-SPEED 4-BIT ACCUMULATORS IMPLEMENTED IN INDIUM PHOSPHIDE DHBT TECHNOLOGY.

Published in:

International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 22, doi. 10.1142/S0129156404002612

By:

Turner, Steven Eugene;
Kotecki, David E.

Publication type:

Article

The InP-HEMT IC Technology for 40Gbit/s Optical Communications.

Published in:

International Journal of High Speed Electronics & Systems, 2003, v. 13, n. 1, p. 141, doi. 10.1142/S0129156403001569

By:

Yamane, Yasuro;
Murata, Koichi

Publication type:

Article

High-resolution synchrotron diffraction study of porous buffer InP(001) layers.

Published in:

Journal of Applied Crystallography, 2014, v. 47, n. 5, p. 1614, doi. 10.1107/S1600576714016392

By:

Lomov, Andrey A.;
Punegov, Vasily I.;
Nohavica, Dusan;
Chuev, Mikhail A.;
Vasiliev, Alexander L.;
Novikov, Dmitrii V.

Publication type:

Article

Preparation of Highly Stable and Photoluminescent Cadmium‐Free InP/GaP/ZnS Core/Shell Quantum Dots and Application to Quantitative Immunoassay.

Published in:

Particle & Particle Systems Characterization, 2020, v. 37, n. 3, p. 1, doi. 10.1002/ppsc.201900441

By:

Xu, Yanxia;
Lv, Yanbing;
Wu, Ruili;
Shen, Huaibin;
Yang, Huawei;
Zhang, Han;
Li, Jinjie;
Li, Lin Song

Publication type:

Article

Laser/Electron Irradiation on Indium Phosphide (InP) Semiconductor: Promising Pathways to In Situ Formation of Indium Nanoparticles.

Published in:

Particle & Particle Systems Characterization, 2018, v. 35, n. 11, p. N.PAG, doi. 10.1002/ppsc.201800237

By:

Assis, Marcelo;
Macedo, Nadia G.;
Machado, Thales R.;
Ferrer, Mateus M.;
Gouveia, Amanda F.;
Cordoncillo, Eloisa;
Torres‐Mendieta, Rafael;
Beltrán‐Mir, Hector;
Mínguez‐Vega, Gladys;
Leite, Edson R.;
Sambrano, Júlio R.;
Andrés, Juan;
Longo, Elson

Publication type:

Article

A new procedure for the extraction of a multibias linear model for MESFETs and HEMTs.

Published in:

Microwave & Optical Technology Letters, 2000, v. 25, n. 4, p. 263, doi. 10.1002/(SICI)1098-2760(20000520)25:4<263::AID-MOP11>3.0.CO;2-K

By:

Di Martino, Alberto;
Dutisseuil, Eric;
Ladner, Carine;
Pisa, Stefano;
Tommasino, Pasquale;
Trifiletti, Alessandro

Publication type:

Article

A three-terminal edge-coupled InGaAs/InP heterojunction phototransistor for multifunction operation.

Published in:

Microwave & Optical Technology Letters, 1998, v. 17, n. 6, p. 408, doi. 10.1002/(SICI)1098-2760(19980420)17:6<408::AID-MOP18>3.0.CO;2-W

By:

Magnin, V.;
Van De Casteele, J.;
Vilcot, J. P.;
Harari, J.;
Gouy, J. P.;
Decoster, D.

Publication type:

Article

Studies on low-leakage surface-undoped InAlAs/InGaAs-doped channel HFETs.

Published in:

Microwave & Optical Technology Letters, 1998, v. 17, n. 5, p. 315, doi. 10.1002/(SICI)1098-2760(19980405)17:5<315::AID-MOP12>3.0.CO;2-2

By:

Wang, H.;
Liao, H.;
Gilbert, M.;
Dosanjh, S.;
Young-Smith, K.

Publication type:

Article

GUEST EDITORIAL.

Published in:

1996

By:

Pavlidis, D.;
Ashizawa, Y.;
Enoki, T.;
Wada, O.

Publication type:

Editorial

AN INDIUM PHOSPHATE SELF-OSCILLATING MIXER FOR A 90-GHz MILLIMETER-WAVE RECEIVER APPLICATION.

Published in:

Microwave & Optical Technology Letters, 1995, v. 8, n. 3, p. 156, doi. 10.1002/mop.4650080313

By:

Gund, C. F.;
Lazarus, M. J.

Publication type:

Article

Morphology-to-properties correlations in anodic porous InP layers.

Published in:

Journal of Solid State Electrochemistry, 2010, v. 14, n. 7, p. 1177, doi. 10.1007/s10008-009-0942-y

By:

Santinacci, Lionel;
Gonçalves, Anne-Marie;
Bouttemy, Muriel;
Etcheberry, Arnaud

Publication type:

Article

106-GHz bandwidth InP DHBT linear driver with a 3-Vppdiff swing at 80 GBd in PAM-4.

Published in:

Electronics Letters (Wiley-Blackwell), 2020, v. 56, n. 14, p. 691, doi. 10.1049/el.2020.0654

By:

Hersent, R.;
Jorge, F.;
Duval, B.;
Dupuy, J.-Y.;
Konczykowska, A.;
Riet, M.;
Nodjiadjim, V.;
Mismer, C.;
Blache, F.;
Kasbari, A.;
Ouslimani, A.

Publication type:

Article

Transimpedance amplifiers with 133 GHz bandwidth on 130 nm indium phosphide double heterojunction bipolar transistors.

Published in:

Electronics Letters (Wiley-Blackwell), 2019, v. 55, n. 9, p. 521, doi. 10.1049/el.2018.8135

By:

Giannakopoulos, S.;
He, Z.;
Darwazeh, I.;
Zirath, H.

Publication type:

Article

212-Gbit/s 2:1 multiplexing selector realised in InP DHBT.

Published in:

Electronics Letters (Wiley-Blackwell), 2019, v. 55, n. 5, p. 242, doi. 10.1049/el.2018.7545

By:

Konczykowska, A.;
Jorge, F.;
Riet, M.;
Nodjiadjim, V.;
Duval, B.;
Mardoyan, H.;
Estaran, J. M.;
Adamiecki, A.;
Raybon, G.;
Dupuy, J. -Y.

Publication type:

Article

Electrical spectrum synthesis technique using digital pre-processing and ultra-broadband electrical bandwidth doubler for high-speed optical transmitter.

Published in:

Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 24, p. 1390, doi. 10.1049/el.2018.6216

By:

Hamaoka, F.;
Nakamura, M.;
Nagatani, M.;
Wakita, H.;
Yamazaki, H.;
Kobayashi, T.;
Nosaka, H.;
Miyamoto, Y.

Publication type:

Article

Temperature-dependent characteristics of InP-RTD-based microwave amplifier IC.

Published in:

Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 15, p. 1058, doi. 10.1049/el.2017.1157

By:

Lee, J.;
Yang, K.

Publication type:

Article

Sub-THz wave generation based on a dual wavelength microsquare laser.

Published in:

Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 14, p. 939, doi. 10.1049/el.2017.1695

By:

Hai-Zhong Weng;
Osamu Wada;
Jun-Yuan Han;
Jin-Long Xiao;
Yue-De Yang;
Yong-Zhen Huang;
Jin Li;
Bing Xiong;
Chang-Zheng Sun;
Yi Luo

Publication type:

Article

Generation of Millimeter Radiation Due to Electric-Field-Induced Electron-Transit-Time Resonance in Indium Phosphide.

Published in:

JETP Letters, 2001, v. 73, n. 5, p. 219

By:

Vorob’ev, L. E.;
Danilov, S. N.;
Tulupenko, V. N.;
Firsov, D. A.

Publication type:

Article

无镉无铅环保型蓝光量子点及其发光二极管器件.

Published in:

Chinese Journal of Liquid Crystal & Displays, 2021, v. 36, n. 1, p. 203, doi. 10.37188/CJLCD.2020-0271

By:

赵芳青;
郝建华;
王恺

Publication type:

Article

Capacitive micromachined ultrasonic transducers: Transmission evaluation with different membrane materials and dimensions: Semiconductor material utilization for CMUT for transduction and reception.

Published in:

Technisches Messen, 2021, v. 88, n. 4, p. 251, doi. 10.1515/teme-2020-0073

By:

Tripathi, Sudhanshu;
Agarwal, Rekha;
Vashisth, Rashmi;
Singh, Devraj

Publication type:

Article

Compound Semiconductors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 8, p. 1, doi. 10.1002/pssa.202300223

By:

Xing, Grace;
Mi, Zetian;
Chowdhury, Srabanti

Publication type:

Article

Compound Semiconductors.

Published in:: Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 4, p. 1, doi. 10.1002/pssa.202200049
Publication type:: Article

Lasing Characteristics and Reliability of 1550 nm Laser Diodes Monolithically Grown on Silicon.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 3, p. 1, doi. 10.1002/pssa.202000374

By:

Shi, Bei;
Pinna, Sergio;
Zhao, Hongwei;
Zhu, Si;
Klamkin, Jonathan

Publication type:

Article

Impact of Reduced Gate‐to‐Source Spacing on Indium Phosphide High Electron Mobility Transistor Performance.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 3, p. 1, doi. 10.1002/pssa.202000191

By:

Calvo Ruiz, Diego;
Han, Daxin;
Bonomo, Giorgio;
Saranovac, Tamara;
Ostinelli, Olivier;
Bolognesi, Colombo R.

Publication type:

Article

Growth of Black TiO2 Quantum Dots by Solution‐Based Electrochemical Process.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 1, p. 1, doi. 10.1002/pssa.202000239

By:

Saranrom, Natpapon;
Sintiam, Thanakrit;
Panyathip, Rangsan;
Hongsith, Kritsada;
Sucharitakul, Sukrit;
Ngamjarurojana, Athipong;
Boonyawan, Dheerawan;
Kumnorkaew, Pisist;
Kerdcharoen, Teerakiat;
Choopun, Supab

Publication type:

Article

Ambient Temperature–Corrected Mechanical Stress Mapping of Gallium Nitride and Aluminum Indium Gallium Phosphide Films by Raman Scattering Spectroscopy for Characterization of Light‐Emitting Diodes.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 7, p. 1, doi. 10.1002/pssa.201900776

By:

Guo, Xiaoru;
Mughal, Asad;
Dunphy, Darren;
Stone, Gregory;
Miller, David;
Huh, Sungwook

Publication type:

Article

Compound Semiconductors.

Published in:: Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. N.PAG, doi. 10.1002/pssa.202000022
Publication type:: Article