Effect of thickness on the structural and optical properties of GaN films grown on Si(111).
- Published in:
- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 4, p. 972, doi. 10.1007/s10854-011-0529-0
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- Publication type:
- Article
Works matching DE "INDIUM nitrides"
Results: 7
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2
III-nitride microcrystal cavities with quasi whispering gallery modes grown by molecular beam epitaxy.
- Published in:
- Physica Status Solidi (B), 2016, v. 253, n. 5, p. 845, doi. 10.1002/pssb.201552657
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- Publication type:
- Article
3
An analytical model of anisotropic low-field electron mobility in wurtzite indium nitride.
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- Applied Physics A: Materials Science & Processing, 2014, v. 114, n. 4, p. 1113, doi. 10.1007/s00339-013-7798-9
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- Publication type:
- Article
4
Effect of Intrinsic Layer Thickness on PIN Structure for Tandem Solar Cell Based on Indium Gallium Nitride Using AMPS -1D.
- Published in:
- Journal of Nano- & Electronic Physics, 2018, v. 10, n. 4, p. 1, doi. 10.21272/jnep.10(4).04013
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- Publication type:
- Article
5
Hydrogen influence on the electrical properties of sputtered In N thin films.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2013, v. 210, n. 8, p. 1606, doi. 10.1002/pssa.201228477
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- Publication type:
- Article
6
Effect of the Barrier Thickness on the Optical Properties of InGaN/GaN/AlO (0001) LED Heterostructures.
- Published in:
- Russian Physics Journal, 2015, v. 58, n. 7, p. 996, doi. 10.1007/s11182-015-0600-z
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- Publication type:
- Article
7
Physical properties of indium nitride, impurities, and defects.
- Published in:
- Russian Physics Journal, 2014, v. 56, n. 9, p. 997, doi. 10.1007/s11182-014-0131-z
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- Publication type:
- Article