Works matching DE "INDIUM nitride"

Results: 96

Spectroscopic Characteristics of Indium Nitride Nanostructures Prepared by Pulsed Laser Ablation.

Published in:

Iraqi Journal of Applied Physics Letters, 2025, v. 8, n. 2, p. 56

By:

Bahrooz, Farhad A.;
Rahmatzadeh, Alireza M.

Publication type:

Article

Indium Nitride Nanoparticles Prepared by Laser Ablation in Liquid.

Published in:

International Journal of Nanoscience, 2019, v. 18, n. 2, p. N.PAG, doi. 10.1142/S0219581X18500217

By:

Khashan, Khawla S.;
Abbas, Sarah F.

Publication type:

Article

A hybrid integrated quantum key distribution transceiver chip.

Published in:

NPJ Quantum Information, 2023, v. 9, n. 1, p. 1, doi. 10.1038/s41534-023-00751-3

By:

Dolphin, Joseph A.;
Paraïso, Taofiq K.;
Du, Han;
Woodward, Robert I.;
Marangon, Davide G.;
Shields, Andrew J.

Publication type:

Article

Hot carrier dynamics of photoinjected plasma in indium nitride.

Published in:

European Physical Journal B: Condensed Matter, 2021, v. 94, n. 4, p. 1, doi. 10.1140/epjb/s10051-021-00096-w

By:

Rodrigues, Clóves G.

Publication type:

Article

Sensing behaviors of transition metal decorated InN monolayer upon SO2 and NO molecules: a first-principles study.

Published in:

European Physical Journal B: Condensed Matter, 2021, v. 94, n. 2, p. 1, doi. 10.1140/epjb/s10051-021-00060-8

By:

Hu, Guangzhao;
Liu, Xuefei;
Ding, Zhao;
Song, Juan;
You, Qiwei

Publication type:

Article

Interplay between Coulomb interaction and quantum-confined Stark-effect in polar and nonpolar wurtzite InN/GaN quantum dots.

Published in:

European Physical Journal B: Condensed Matter, 2013, v. 86, n. 11, p. 1, doi. 10.1140/epjb/e2013-40542-0

By:

Barthel, Stefan;
Schuh, Kolja;
Marquardt, Oliver;
Hickel, Tilmann;
Neugebauer, Jörg;
Jahnke, Frank;
Czycholl, Gerd

Publication type:

Article

Relative humidity sensing properties of indium nitride compound with oxygen doping on silicon and AAO substrates.

Published in:

Modern Physics Letters B, 2019, v. 33, n. 14/15, p. N.PAG, doi. 10.1142/S021798491940044X

By:

Yang, Chih Chin;
Liu, Ting Hao;
Chang, Shun Hsyung

Publication type:

Article

First-principles study of optical properties of InN nanosheet.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2016, v. 30, n. 19, p. -1, doi. 10.1142/S0217979216501174

By:

Sarmazdeh, Masoud Majidiyan;
Mendi, Roohallah Taghavi;
Zelati, Amir;
Boochani, Arash;
Nofeli, Fariba

Publication type:

Article

The Effect of Pressure on Band Parameters and Optical Characteristics in Indium Nitride.

Published in:

Journal of Electronic Materials, 2022, v. 51, n. 7, p. 3758, doi. 10.1007/s11664-022-09624-5

By:

Saib, Salima;
Bouarissa, Nadir

Publication type:

Article

High Radiative Recombination Rate of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with AlInGaN/AlInN/AlInGaN Tunnel Electron Blocking Layer.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 10, p. 5612, doi. 10.1007/s11664-021-09086-1

By:

Jamil, Tariq;
Usman, Muhammad;
Jamal, Habibullah;
Khan, Sibghatullah;
Rasheed, Saad;
Ali, Shazma

Publication type:

Article

Structural properties of InN on PbTiO (111) surfaces.

Published in:

Journal of Materials Science, 2014, v. 49, n. 14, p. 4715, doi. 10.1007/s10853-014-8171-x

By:

Wang, Jianli;
Tang, Gang;
Wu, X.;
Pu, Long

Publication type:

Article

Pressure dependence of elastic constants using Landau free energy and a numerical modeling analysis of W-InN.

Published in:

Phase Transitions, 2024, v. 97, n. 4/5, p. 289, doi. 10.1080/01411594.2024.2329377

By:

Mukherjee, Prabir K.;
Tripathi, Gouri S.

Publication type:

Article

Photothermal CO 2 Hydrogenation to Methanol over Ni-In 2 O 3 /g-C 3 N 4 Heterojunction Catalysts.

Published in:

Catalysts (2073-4344), 2024, v. 14, n. 11, p. 756, doi. 10.3390/catal14110756

By:

Shan, Xuekai;
Zhang, Guolin;
Zhang, Ying;
Zhang, Shuobo;
Guo, Fang;
Xu, Qi

Publication type:

Article

Numerical Analysis of a High-Pressure Spatial Chemical Vapor Deposition (HPS-CVD) Reactor for Flow Stability at High Pressures.

Published in:

Crystals (2073-4352), 2024, v. 14, n. 4, p. 377, doi. 10.3390/cryst14040377

By:

Enayati, Hooman;
Pimputkar, Siddha

Publication type:

Article

Computational Fluid Dynamic Analysis of a High-Pressure Spatial Chemical Vapor Deposition (HPS-CVD) Reactor for Flow Stability.

Published in:

Crystals (2073-4352), 2024, v. 14, n. 2, p. 105, doi. 10.3390/cryst14020105

By:

Enayati, Hooman;
Pimputkar, Siddha

Publication type:

Article

N-Polar Indium Nitride Quantum Dashes and Quantum Wire-like Structures: MOCVD Growth and Characterization.

Published in:

Crystals (2073-4352), 2023, v. 13, n. 4, p. 699, doi. 10.3390/cryst13040699

By:

Muthuraj, Vineeta R.;
Liu, Wenjian;
Collins, Henry;
Li, Weiyi;
Hamwey, Robert;
DenBaars, Steven P.;
Mishra, Umesh K.;
Keller, Stacia

Publication type:

Article

Mechanical Stabilities and Properties of Graphene-like 2D III-Nitrides: A Review.

Published in:

Crystals (2073-4352), 2023, v. 13, n. 1, p. 12, doi. 10.3390/cryst13010012

By:

Ye, Chao;
Peng, Qing

Publication type:

Article

Indium Ammoniates from Ammonothermal Synthesis: InAlF 6 (NH 3) 2 , [In(NH 3) 6 ][AlF 6 ], and [In 2 F(NH 3) 10 ] 2 [SiF 6 ] 5 ∙ 2 NH 3.

Published in:

Crystals (2073-4352), 2021, v. 11, n. 6, p. 679, doi. 10.3390/cryst11060679

By:

Becker, Peter;
Cekovski, Toni Boris;
Niewa, Rainer

Publication type:

Article

Formation of embedded indium nitride and indium oxide nanoclusters in silica samples sequentially implanted with indium and nitrogen ions.

Published in:

Journal of Experimental Nanoscience, 2013, v. 8, n. 7/8, p. 957, doi. 10.1080/17458080.2011.630034

By:

Raman, P.Santhana;
Nair, K.G.M.;
Ghatak, Jay;
Bhatta, UmanandaM.;
Satyam, P.V.;
Kalavathi, S.;
Panigrahi, B.K.;
Ravichandran, V.

Publication type:

Article

Changes of the Physical Properties of Sputtered InGaN Thin Films Under Small Nitrogen Gas Flow Variations.

Published in:

Journal of Electronic Materials, 2019, v. 48, n. 5, p. 2924, doi. 10.1007/s11664-019-07042-8

By:

Erdoğan, Erman;
Kundakçı, Mutlu

Publication type:

Article

Study of Stark Effect in n-doped 1.55 μm InN0.92yP1−1.92yBiy/InP MQWs.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 8, p. 4757, doi. 10.1007/s11664-018-6368-5

By:

Bilel, C.;
Chakir, K.;
Rebey, A.;
Alrowaili, Z. A.

Publication type:

Article

Growth and Characterization of Single Crystalline InN Grown on GaN by RF Sputtering for Robust Schottky Contacts.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 12, p. 6305, doi. 10.1007/s11664-016-5030-3

By:

Harotoonian, Vache;
Woodall, Jerry

Publication type:

Article

Band Offset Characterization of the Atomic Layer Deposited Aluminum Oxide on m-Plane Indium Nitride.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2013, doi. 10.1007/s11664-015-4175-9

By:

Jia, Ye;
Wallace, Joshua;
Qin, Yueling;
Gardella, Joseph;
Dabiran, Amir;
Singisetti, Uttam

Publication type:

Article

Growth of InN and In-Rich InGaN Layers on GaN Templates by Pulsed Metalorganic Chemical Vapor Deposition.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 1, p. 188, doi. 10.1007/s11664-014-3494-6

By:

Mickevičius, J.;
Aleknavičius, J.;
Stanionytė, S.;
Kadys, A.;
Malinauskas, T.;
Grinys, T.;
Dmukauskas, M.;
Tomašiūnas, R.;
Selskis, A.;
Kondrotas, R.;
Lugauer, H.;
Strassburg, M.

Publication type:

Article

Study of InAlN thin films deposited on silicon, ITO/PET, and ITO/GLASS substrates at room temperature for its possible use in solar cells.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 3, p. 1162, doi. 10.1007/s10854-021-07398-w

By:

Nieto, L. F. Mulcue;
Saldarriaga, W.;
de la Cruz, W.;
Restrepo, E.;
Ospina, M. S.;
Escobar, D.

Publication type:

Article

A comparative study of InN growth on quartz, silicon, C-sapphire and bulk GaN substrates by RF magnetron sputtering.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 13, p. 9228, doi. 10.1007/s10854-017-6657-4

By:

Bashir, Umar;
Hassan, Zainuriah;
Ahmed, Naser

Publication type:

Article

An analytical model of low field and high field electron mobility in wurtzite indium nitride.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 11, p. 11353, doi. 10.1007/s10854-016-5259-x

By:

Wang, Shulong;
Liu, Hongxia;
Chen, Qing;
Zhang, Hailin

Publication type:

Article

Morphology evolution of nano-structured InN grown by MOMBE.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 6, p. 4285, doi. 10.1007/s10854-015-2980-9

By:

Kuo, Shou-Yi;
Chen, Wei-Chun;
Yang, Jui-Fu;
Hsiao, Chien-Nan;
Lai, Fang-I

Publication type:

Article

Influences of hetero-junction buffer layers and substrates on polarity of PA-MBE grown InN films.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 4, p. 2480, doi. 10.1007/s10854-015-2709-9

By:

Fan, Jenn-Chyuan;
Lo, Yun-Yo;
Huang, Man-Fang;
Chen, Wei-Chi;
Liu, Chien-Chen;
Lee, C.;
Chiang, Yu-Chia

Publication type:

Article

The effective role of time in synthesising InN by chemical method at low temperature.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 3, p. 1376, doi. 10.1007/s10854-014-1737-1

By:

Qaeed, M.;
Ibrahim, K.;
Saron, K.;
Abdullah, Q.;
Elfadill, Nezar;
Abud, Saleh;
Chahrour, Khaled

Publication type:

Article

InN Layers Grown by MOCVD on a‐Plane Al2O3.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 11, p. 1, doi. 10.1002/pssa.201700919

By:

Buzynin, Yury N.;
Khrykin, Oleg I.;
Yunin, Pavel A.;
Drozdov, Mikhail N.;
Luk'yanov, Andrey Yu.

Publication type:

Article

Self-consistent simulation of two-dimensional electron gas characteristics of a novel (In xAl1- xN/AlN) MQWs/InN/GaN heterostructure.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 5, p. 1263, doi. 10.1002/pssa.201532778

By:

Li, Wei;
Wang, Quan;
Wang, Cuimei;
Yin, Haibo;
Yan, Junda;
Gong, Jiamin;
Li, Baiquan;
Wang, Xiaoliang;
Wang, Zhanguo

Publication type:

Article

Recent and forthcoming publications in pss.

Published in:: 2015
Publication type:: Other

Lowering of growth temperature of epitaxial In N by superlattice matched intermediate layers.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2013, v. 210, n. 11, p. 2409, doi. 10.1002/pssa.201329345

By:

Tangi, Malleswararao;
De, Arpan;
Shivaprasad, S. M.

Publication type:

Article

Hydrogen influence on the electrical properties of sputtered In N thin films.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2013, v. 210, n. 8, p. 1606, doi. 10.1002/pssa.201228477

By:

Sparvoli, Marina;
Mansano, Ronaldo D.;
Chubaci, José F. D.

Publication type:

Article

Ab Initio Molecular Dynamics Insight to Structural Phase Transition and Thermal Decomposition of InN.

Published in:

International Journal of Molecular Sciences, 2024, v. 25, n. 15, p. 8281, doi. 10.3390/ijms25158281

By:

Piechota, Jacek;
Krukowski, Stanislaw;
Sadovyi, Bohdan;
Sadovyi, Petro;
Porowski, Sylwester;
Grzegory, Izabella

Publication type:

Article

Effects of coating cycles on spin-coated indium nitride thin films.

Published in:

Surface Engineering, 2018, v. 34, n. 7, p. 554, doi. 10.1080/02670844.2017.1376832

By:

Lee, Zhi Yin;
Ng, Sha Shiong;
Yam, Fong Kwong;
Hassan, Zainuriah

Publication type:

Article

Investigation of line-shaped CO2 laser annealing on InN/AlN/sapphire substrates.

Published in:

International Journal of Advanced Manufacturing Technology, 2022, v. 120, n. 9/10, p. 5687, doi. 10.1007/s00170-022-09130-2

By:

Tseng, Shih-Feng;
Wang, Chun-Jen;
Chen, Wei-Chun

Publication type:

Article

Anisotropic low-field electron diffusion coefficient and mobility in wurtzite indium nitride.

Published in:

Physica Status Solidi (B), 2014, v. 251, n. 1, p. 168, doi. 10.1002/pssb.201349085

By:

Wang, Shulong;
Liu, Hongxia;
Yang, Zhaonian

Publication type:

Article

DFT Insight to Ag 2 O Modified InN as SF 6 -N 2 Mixture Decomposition Components Detector.

Published in:

Applied Sciences (2076-3417), 2022, v. 12, n. 15, p. 7873, doi. 10.3390/app12157873

By:

Dong, Haibo;
Li, Wenjun;
Junaid, Muhammad;
Lu, Zhuo;
Luo, Hao;
Sun, Weihu

Publication type:

Article

High-Quality, InN-Based, Saturable Absorbers for Ultrafast Laser Development.

Published in:

Applied Sciences (2076-3417), 2020, v. 10, n. 21, p. 7832, doi. 10.3390/app10217832

By:

Monroy, Laura;
Jiménez-Rodríguez, Marco;
Monroy, Eva;
González-Herráez, Miguel;
B. Naranjo, Fernando

Publication type:

Article

Effect of film thickness on morphological, structural and electrical properties of InAlN thin layers grown on glass at room temperature.

Published in:

Applied Physics A: Materials Science & Processing, 2021, v. 127, n. 6, p. 1, doi. 10.1007/s00339-021-04618-2

By:

Mulcue, L. F.;
de la Cruz, W.;
Saldarriaga, W.

Publication type:

Article

Performance investigation of steep-slope core–shell nanotube indium nitride electron–hole bilayer tunnel field effect transistor.

Published in:

Applied Physics A: Materials Science & Processing, 2019, v. 125, n. 6, p. N.PAG, doi. 10.1007/s00339-019-2700-z

By:

Ahangari, Zahra

Publication type:

Article

Generation of light-induced surface current in c-oriented InN epitaxial layers.

Published in:

Applied Physics A: Materials Science & Processing, 2019, v. 125, n. 2, p. 1, doi. 10.1007/s00339-018-2374-y

By:

Barick, B. K.;
Deb, S.;
Dhar, S.

Publication type:

Article

Surface-enhanced Raman spectroscopy using 2D plasmons of InN nanostructures.

Published in:

Applied Physics A: Materials Science & Processing, 2018, v. 124, n. 6, p. 1, doi. 10.1007/s00339-018-1845-5

By:

Madapu, Kishore K.;
Dhara, Sandip

Publication type:

Article

Generation of ultra-small InN nanocrystals by pulsed laser ablation of suspension in organic solution.

Published in:

Applied Physics A: Materials Science & Processing, 2017, v. 123, n. 3, p. 1, doi. 10.1007/s00339-017-0834-4

By:

Kurşungöz, Canan;
Uzcengiz Şimşek, Elif;
Tuzaklı, Refik;
Ortaç, Bülend

Publication type:

Article

Two intermediate bands solar cells of InGaN/InN quantum dot supracrystals.

Published in:

Applied Physics A: Materials Science & Processing, 2014, v. 116, n. 3, p. 1009, doi. 10.1007/s00339-014-8296-4

By:

Wei, Wensheng;
Zhang, Qiubo;
Zhao, Shaoyun;
Zhang, Yaoju

Publication type:

Article

Advances in Room Temperature of Indium Aluminum Nitride InAlN Deposition via Direct Current (DC) Co-Sputtering for Solar Energy Applications.

Published in:

Energies (19961073), 2024, v. 17, n. 21, p. 5447, doi. 10.3390/en17215447

By:

Cañón-Bermúdez, Juan David;
Mulcué-Nieto, Luis Fernando

Publication type:

Article

Effect of Substrate Polarity on the Performance Characteristics of InGaN-based Green Light-Emitting Diodes.

Published in:

Semiconductors, 2024, v. 58, n. 12, p. 928, doi. 10.1134/S1063782624602528

By:

Sirkeli, V. P.

Publication type:

Article

Specific Features of Structural Stresses in InGaN/GaN Nanowires.

Published in:

Semiconductors, 2021, v. 55, n. 10, p. 795, doi. 10.1134/S1063782621090207

By:

Soshnikov, I. P.;
Kotlyar, K. P.;
Reznik, R. R.;
Gridchin, V. O.;
Lendyashova, V. V.;
Vershinin, A. V.;
Lysak, V. V.;
Kirilenko, D. A.;
Bert, N. A.;
Cirlin, G. E.

Publication type:

Article