Works about INDIUM gallium zinc oxide

Results: 989

Gate-Controlled Three-Terminal ZnO Nanoparticle Optoelectronic Synaptic Devices for In-Sensor Neuromorphic Memory Applications.

Published in:

Nanomaterials (2079-4991), 2025, v. 15, n. 12, p. 908, doi. 10.3390/nano15120908

By:

Jeon, Dabin;
Lee, Seung Hun;
Lee, Sung-Nam

Publication type:

Article

Effect of Rising Time on AC Stress-Induced Performance Degradation in a-ITGZO Thin-Film Transistors.

Published in:

Nanomaterials (2079-4991), 2025, v. 15, n. 12, p. 880, doi. 10.3390/nano15120880

By:

Kang, Mingu;
Cho, Kyoungah;
Kim, Sangsig

Publication type:

Article

Ionic Liquid Activation of Amorphous Metal-Oxide Semiconductors for Flexible Transparent Electronic Devices.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 17, p. 2820, doi. 10.1002/adfm.201505274

By:

Pudasaini, Pushpa Raj;
Noh, Joo Hyon;
Wong, Anthony T.;
Ovchinnikova, Olga S.;
Haglund, Amanda V.;
Dai, Sheng;
Ward, Thomas Zac;
Mandrus, David;
Rack, Philip D.

Publication type:

Article

Photo-Insensitive Amorphous Oxide Thin-Film Transistor Integrated with a Plasmonic Filter for Transparent Electronics.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 23, p. 3482, doi. 10.1002/adfm.201304114

By:

Chang, Seongpil;
Do, Yun Seon;
Kim, Jong‐Woo;
Hwang, Bo Yeon;
Choi, Jinnil;
Choi, Byung‐Hyun;
Lee, Yun‐Hi;
Choi, Kyung Cheol;
Ju, Byeong‐Kwon

Publication type:

Article

Foldable and Recyclable Iontronic Cellulose Nanopaper for Low‐Power Paper Electronics.

Published in:

Advanced Sustainable Systems, 2022, v. 6, n. 9, p. 1, doi. 10.1002/adsu.202200177

By:

Cunha, Inês;
Ferreira, Sofia Henriques;
Martins, Jorge;
Fortunato, Elvira;
Gaspar, Diana;
Martins, Rodrigo;
Pereira, Luís

Publication type:

Article

Low Saturation Voltage and High Stability in Dual-Mode Schottky Barrier TFTs Using Bilayer IGZO.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 7, p. 1380, doi. 10.3390/electronics14071380

By:

Huang, Yi;
Liang, Xiaoci;
Zhang, Li;
Wang, Mengye;
Wang, Tianyue;
Liu, Chuan

Publication type:

Article

Enhancement of Synaptic Performance through Synergistic Indium Tungsten Oxide-Based Electric-Double-Layer and Electrochemical Doping Mechanisms.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 15, p. 2916, doi. 10.3390/electronics13152916

By:

Mah, Dong-Gyun;
Lim, Seong-Hwan;
Cho, Won-Ju

Publication type:

Article

A Simple Scan Driver Circuit Suitable for Depletion-Mode Metal-Oxide Thin-Film Transistors in Active-Matrix Displays.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 12, p. 2254, doi. 10.3390/electronics13122254

By:

You, Yikyoung;
Lim, Junhyung;
Son, Kyoungseok;
Kim, Jaybum;
Kim, Youngoo;
Lee, Kyunghoe;
Chung, Kyunghoon;
Park, Keechan

Publication type:

Article

Control of Threshold Voltage in ZnO/Al 2 O 3 Thin-Film Transistors through Al 2 O 3 Growth Temperature.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 8, p. 1544, doi. 10.3390/electronics13081544

By:

Baek, Dongki;
Lee, Se-Hyeong;
Bak, So-Young;
Jang, Hyeongrok;
Lee, Jinwoo;
Yi, Moonsuk

Publication type:

Article

Characteristics Analysis of IGZO TFT and Logic Unit in the Temperature Range of 8–475 K.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 8, p. 1427, doi. 10.3390/electronics13081427

By:

Wang, Jianjian;
Bi, Jinshun;
Xu, Gaobo;
Liu, Mengxin

Publication type:

Article

Design of a 1.2 kV SiC MOSFET with Buried Oxide for Improving Switching Characteristics.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 5, p. 962, doi. 10.3390/electronics13050962

By:

Yoon, Hyowon;
Seok, Ogyun

Publication type:

Article

An Optimized Device Structure with Improved Erase Operation within the Indium Gallium Zinc Oxide Channel in Three-Dimensional NAND Flash Applications.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 2, p. 451, doi. 10.3390/electronics13020451

By:

Choi, Seonjun;
Park, Jin-Seong;
Kang, Myounggon;
Jung, Hong-sik;
Song, Yun-heub

Publication type:

Article

An Improved Structure Enabling Hole Erase Operation When Using an IGZO Channel in a 3D NAND Flash Structure to Which COP (Cell-On-Peri) Structure Is Applied.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 13, p. 2945, doi. 10.3390/electronics12132945

By:

Choi, Seonjun;
Kang, Myounggon;
Song, Yun-Heub

Publication type:

Article

Benefits from Using Very Thin Channel Layer for TFTs.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 12, p. 2694, doi. 10.3390/electronics12122694

By:

Samb, Mamadou Lamine;
Jacques, Emmanuel;
Maiga, Amadou Seidou;
Mohammed-Brahim, Tayeb

Publication type:

Article

A Novel Ring-Gate AlGaN/GaN HEMT Device and Electrode Structure Optimization.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 20, p. 3329, doi. 10.3390/electronics11203329

By:

Zhu, Yanxu;
Song, Xiaomeng;
Li, Jianwei;
Li, Jinheng;
Fei, Baoliang;
Li, Peiyang;
Li, Fajun

Publication type:

Article

Power Efficiency Characterization with Various Gate Oxide Thicknesses in Class DE Amplifiers for HIFU Applications.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 19, p. 3191, doi. 10.3390/electronics11193191

By:

Choi, Hyun-Sik;
Ngo, Thinh;
Zhou, Yushi

Publication type:

Article

Understanding and Controlling Band Alignment at the Metal/Germanium Interface for Future Electric Devices.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 15, p. 2419, doi. 10.3390/electronics11152419

By:

Nishimura, Tomonori

Publication type:

Article

Applications of Thin Films in Microelectronics.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 6, p. 931, doi. 10.3390/electronics11060931

By:

Kwon, Hyuk-Jun

Publication type:

Article

Decoder-Type Scan Driver Suitable for Flexible and Stretchable Displays.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 4, p. 519, doi. 10.3390/electronics11040519

By:

Kang, Seo Jin;
Lee, Hyuk Su;
Woo, Jae Geun;
Yu, Eun Seong;
Lee, Jong Mo;
Bae, Byung Seong

Publication type:

Article

Investigation of AlGaN Channel HEMTs on β-Ga 2 O 3 Substrate for High-Power Electronics.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 2, p. 225, doi. 10.3390/electronics11020225

By:

Revathy, A.;
Boopathi, C. S.;
Khalaf, Osamah Ibrahim;
Romero, Carlos Andrés Tavera

Publication type:

Article

Memory Characteristics of Thin Film Transistor with Catalytic Metal Layer Induced Crystallized Indium-Gallium-Zinc-Oxide (IGZO) Channel.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 1, p. 53, doi. 10.3390/electronics11010053

By:

Han, Hoonhee;
Jang, Seokmin;
Kim, Duho;
Kim, Taeheun;
Cho, Hyeoncheol;
Shin, Heedam;
Choi, Changhwan

Publication type:

Article

Floating Filler (FF) in an Indium Gallium Zinc Oxide (IGZO) Channel Improves the Erase Performance of Vertical Channel NAND Flash with a Cell-on-Peri (COP) Structure.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 13, p. 1561, doi. 10.3390/electronics10131561

By:

Choi, Seonjun;
Choi, Changhwan;
Jeong, Jae Kyeong;
Kang, Myounggon;
Song, Yun-heub

Publication type:

Article

3.3-kV 4H-SiC Split-Gate DMOSFET with Floating p+ Polysilicon for High-Frequency Applications.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 6, p. 659, doi. 10.3390/electronics10060659

By:

Cha, Kyuhyun;
Yoon, Jongwoon;
Kim, Kwangsoo;
Zhao, Qing-Tai

Publication type:

Article

LTPS TFTs with an Amorphous Silicon Buffer Layer and Source/Drain Extension.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 1, p. 29, doi. 10.3390/electronics10010029

By:

Kim, Hye In;
Sung, Jung Min;
Cho, Hyung Uk;
Kim, Yong Jo;
Park, Young Gwan;
Choi, Woo Young

Publication type:

Article

Electrical Performance and Stability Improvements of High-Mobility Indium–Gallium–Tin Oxide Thin-Film Transistors Using an Oxidized Aluminum Capping Layer of Optimal Thickness.

Published in:

Electronics (2079-9292), 2020, v. 9, n. 12, p. 2196, doi. 10.3390/electronics9122196

By:

Cha, Hyun-Seok;
Jeong, Hwan-Seok;
Hwang, Seong-Hyun;
Lee, Dong-Ho;
Kwon, Hyuck-In

Publication type:

Article

Effects of Annealing Atmosphere on Electrical Performance and Stability of High-Mobility Indium-Gallium-Tin Oxide Thin-Film Transistors.

Published in:

Electronics (2079-9292), 2020, v. 9, n. 11, p. 1875, doi. 10.3390/electronics9111875

By:

Jeong, Hwan-Seok;
Cha, Hyun Seok;
Hwang, Seong Hyun;
Kwon, Hyuck-In

Publication type:

Article

Numerical Study of Sub-Gap Density of States Dependent Electrical Characteristics in Amorphous In-Ga-Zn-O Thin-Film Transistors.

Published in:

Electronics (2079-9292), 2020, v. 9, n. 10, p. 1652, doi. 10.3390/electronics9101652

By:

Kim, Do-Kyung;
Park, Jihwan;
Zhang, Xue;
Park, Jaehoon;
Bae, Jin-Hyuk

Publication type:

Article

Study on Characteristics of Enhancement-Mode Gallium-Nitride High-Electron-Mobility Transistor for the Design of Gate Drivers.

Published in:

Electronics (2079-9292), 2020, v. 9, n. 10, p. 1573, doi. 10.3390/electronics9101573

By:

Tang, Sheng-Yi

Publication type:

Article

An Optimized Structure of Split-Gate Resurf Stepped Oxide UMOSFET.

Published in:

Electronics (2079-9292), 2020, v. 9, n. 5, p. 745, doi. 10.3390/electronics9050745

By:

Chen, Runze;
Wang, Lixin;
Jiu, Naixia;
Zhang, Hongkai;
Guo, Min

Publication type:

Article

Effect of Mg Doping on the Electrical Performance of a Sol-Gel-Processed SnO2 Thin-Film Transistor.

Published in:

Electronics (2079-9292), 2020, v. 9, n. 3, p. 523, doi. 10.3390/electronics9030523

By:

Lee, Won-Yong;
Lee, Hyunjae;
Ha, Seunghyun;
Lee, Changmin;
Bae, Jin-Hyuk;
Kang, In-Man;
Kim, Kwangeun;
Jang, Jaewon

Publication type:

Article

Effects of Equivalent-Oxide-Thickness and Fin-Width Scaling on In0.53Ga0.47As Tri-Gate Metal-Oxide-Semiconductor-Field-Effect-Transistors with Al2O3/HfO2 for Low-Power Logic Applications.

Published in:

Electronics (2079-9292), 2020, v. 9, n. 1, p. 29, doi. 10.3390/electronics9010029

By:

Kim, Tae-Woo

Publication type:

Article

Flexible transparent heteroepitaxial conducting oxide with mobility exceeding 100 cm2 V−1 s−1 at room temperature.

Published in:

NPG Asia Materials, 2020, v. 12, n. 1, p. 1, doi. 10.1038/s41427-020-00251-2

By:

Ma, Chun-Hao;
Chen, En-Liang;
Lai, Yu-Hong;
Chen, Yi-Cheng;
Chang, Li;
Chu, Ying-Hao

Publication type:

Article

Ionizing Radiation Detection Using the Field Effect Transistor Based on Reduced Graphene Oxide.

Published in:

Journal of Nano- & Electronic Physics, 2024, v. 16, n. 2, p. 1, doi. 10.21272/jnep.16(2).02019

By:

Olenych, I. B.;
Horbenko, Yu. Yu.;
Monastyrskii, L. S.;
Aksimentyeva, O. I.;
Dzendzelyuk, O. S.

Publication type:

Article

Organic Field-Effect Transistor Based on Poly 3-hexylthiophene as Ammonia Vapor Sensor.

Published in:

Journal of Nano- & Electronic Physics, 2023, v. 15, n. 6, p. 1, doi. 10.21272/jnep.15(6).06020

By:

Maddu, Akhiruddin;
Gunawan, Andri;
Irmansyah, Irmansyah

Publication type:

Article

Implementation of a Linearly Graded Binary Metal Gate Work Function VTFET with Air Pocket.

Published in:

Journal of Nano- & Electronic Physics, 2022, v. 14, n. 6, p. 1, doi. 10.21272/jnep.14(6).06014

By:

Kalai Selvi, K.;
Dhanalakshmi, K. S.

Publication type:

Article

Electronic Properties of α-Al2O3.

Published in:

Journal of Nano- & Electronic Physics, 2022, v. 14, n. 3, p. 1, doi. 10.21272/jnep.14(3).03025

By:

Mostefai, Abdelkrim

Publication type:

Article

Impact of High-k Dielectric Materials on Short Channel Effects in Tri-gate SOI FinFETs.

Published in:

Journal of Nano- & Electronic Physics, 2021, v. 13, n. 5, p. 05013-1, doi. 10.21272/jnep.13(5).05013

By:

Renthlei, Zohmingmawia;
Nanda, Swagat;
Dhar, Rudra Sankar

Publication type:

Article

Wettability of the Cotton and Polyester Fabrics Coated by Nanostructured Indium-doped Zinc Oxide Layers.

Published in:

Journal of Nano- & Electronic Physics, 2021, v. 13, n. 2, p. 02036-1, doi. 10.21272/jnep.13(2).02036

By:

Klochko, N. P.;
Khrypunova, I. V.;
Klepikova, K. S.;
Kopach, V. R.;
Zhadan, D. O.;
Petrushenko, S. I.;
Dukarov, S. V.;
Lyubov, V. M.;
Kirichenko, M. V.;
Khrypunova, A. L.

Publication type:

Article

Single Electron Transistor Based on Endohedral Metallofullerenes Me@C60 (Me = Li, Na, K).

Published in:

Journal of Nano- & Electronic Physics, 2020, v. 12, n. 3, p. 1, doi. 10.21272/jnep.12(3).03017

By:

Sergeyev, D.

Publication type:

Article

Fused thiophene based materials for organic thin‐film transistors.

Published in:

Journal of the Chinese Chemical Society, 2022, v. 69, n. 8, p. 1253, doi. 10.1002/jccs.202200214

By:

Velusamy, Arulmozhi;
Afraj, Shakil N.;
Yau, Shuehlin;
Liu, Cheng‐Liang;
Ezhumalai, Yamuna;
Kumaresan, Prabakaran;
Chen, Ming‐Chou

Publication type:

Article

Aligning poly[1,6‐di‐(N‐carbazolyl)‐2,4‐hexadiyne] crystalline fibers as conducting channels for transistor applications.

Published in:

Journal of the Chinese Chemical Society, 2019, v. 66, n. 9, p. 1227, doi. 10.1002/jccs.201900275

By:

Lin, Fang‐Ju;
Tao, Yu‐Tai

Publication type:

Article

Improved Process Stability and Light Detection in Phototransistors via Inverted MoS2/a‐IGZO Heterojunction Integration.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2025, v. 222, n. 3, p. 1, doi. 10.1002/pssa.202400536

By:

Jin, Jidong;
Kang, Kumin;
Xiao, Zhenyuan;
Zhang, Jiawei;
Kim, Tae Yeon;
Lee, Hyun Seok;
Kim, Jaekyun

Publication type:

Article

Improved Performance and Bias Stability of Indium‐Tin‐Zinc‐Oxide Thin‐Film Transistors Enabled by an Oxygen‐Compensated Capping Layer.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 2, p. 1, doi. 10.1002/pssa.202300544

By:

Xiao, Zhenyuan;
Jin, Jidong;
Lee, Jeongho;
Choi, Gisang;
Lin, Xiaoyu;
Zhang, Jiawei;
Kim, Jaekyun

Publication type:

Article

A Threshold‐Voltage and Drain–Source Current Model for Double‐Channel AlxGa1−xN/GaN/AlyGa1−yN/GaN High‐Electron‐Mobility Transistors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 23, p. 1, doi. 10.1002/pssa.202300413

By:

Cai, Jing;
Yao, Ruo-He;
Liu, Yu-Rong;
Geng, Kui-Wei

Publication type:

Article

Comparative Study of Surface Activation Steps for Thermally Grown Oxide Interface and Optimal Silanization.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 22, p. 1, doi. 10.1002/pssa.202300294

By:

Murugan, Divagar;
Tintelott, Marcel;
Amiri, Hesam;
Kasavetov, Martin;
Besedin, Denis;
Ingebrandt, Sven;
Vu, Xuan Thang;
Pachauri, Vivek

Publication type:

Article

Recent Progress of E‐mode Gallium Nitride Metal–Insulator–Semiconductor ‐High Electron Mobility Transistors with Hybrid Ferroelectric Charge Trap Gate (FEG‐HEMT) for Power Switching Applications.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202370036

By:

Wu, Jui-Sheng;
Weng, You-Chen;
Yang, Tsung-Ying;
Wu, Chia-Hsun;
Lee, Chih-Chieh;
Iwai, Hiroshi;
Chang, Edward Yi

Publication type:

Article

Recent Progress of E‐mode Gallium Nitride Metal–Insulator–Semiconductor ‐High Electron Mobility Transistors with Hybrid Ferroelectric Charge Trap Gate (FEG‐HEMT) for Power Switching Applications.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202370036

By:

Wu, Jui-Sheng;
Weng, You-Chen;
Yang, Tsung-Ying;
Wu, Chia-Hsun;
Lee, Chih-Chieh;
Iwai, Hiroshi;
Chang, Edward Yi

Publication type:

Article

Effect of Heat Treatment on Zirconium Oxide High‐k Gate Dielectric in Silicon‐Based Metal Oxide Semiconductor Capacitors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 9, p. 1, doi. 10.1002/pssa.202200903

By:

Cai, Haotian;
Tuokedaerhan, Kamale;
Lu, Zhenchuan;
Du, Hongguo;
Zhang, Renjia

Publication type:

Article

A Comparative Study on Self‐Aligned Top‐Gate Thin‐Film Transistors with Silicon Nitride as the Interlayer.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 7, p. 1, doi. 10.1002/pssa.202200749

By:

Chen, Yankai;
Peng, Junbiao;
Li, Min;
Xu, Miao;
Xu, Hua;
Cai, Wei

Publication type:

Article

A Hybrid Schottky–Ohmic Drain Contact for Thermally Stressed Beta‐Gallium Oxide Field‐Effect Transistors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 5, p. 1, doi. 10.1002/pssa.202200596

By:

Jeong, Yeong Je;
Lee, Chan Ho;
Yeom, Min Jae;
Yang, Jeong Yong;
Yoo, Geonwook

Publication type:

Article