Works matching DE "INDIUM gallium zinc oxide"

Results: 986

Hydrogen Plasma Treatment for Improving Reliability of In‐Ga‐Zn‐O Transistors Without Side Effects Through Post‐Annealing Process.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 9, p. 1, doi. 10.1002/aelm.202400893

By:

Seo, Taewon;
Yun, Juyoung;
Kim, Seung‐Mo;
Jin, Changeon;
Park, Seongmin;
Seong, Suwon;
Kang, Dae Hwan;
Lee, Byoung Hun;
Chung, Yoonyoung

Publication type:

Article

Steep‐Slope IGZO Transistor Monolithically Integrated with Initialization‐Free Ag/Ti/Hf0.8Zr0.2O2 Atomic Threshold Switch.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 9, p. 1, doi. 10.1002/aelm.202400780

By:

Park, Junmo;
Jung, Hanggyo;
Eom, Deokjoon;
Lee, Heesoo;
Kim, Hyunhee;
Kim, Yonghoon;
Jeon, Jongwook;
Kim, Hyoungsub

Publication type:

Article

Impacts of Device Geometry and Layout on Temperature Profile during Large‐Area Photonic Curing.

Published in:

Advanced Engineering Materials, 2025, v. 27, n. 12, p. 1, doi. 10.1002/adem.202403042

By:

Abed, Yasir Fatha;
Chatterjee, Neel;
Luo, Bing;
Swisher, Sarah L.

Publication type:

Article

Effects of Deposition Power and Annealing Temperature on Indium Zinc Oxide (IZO) Film's Properties and Their Applications to the Source–Drain Electrodes of Amorphous Indium Gallium Zinc Oxide (a-IGZO) Thin-Film Transistors (TFTs).

Published in:

Nanomaterials (2079-4991), 2025, v. 15, n. 11, p. 780, doi. 10.3390/nano15110780

By:

Lee, Yih-Shing;
Chang, Chih-Hsiang;
Le, Bing-Shin;
Nguyen, Vo-Truong Thao;
Tien, Tsung-Cheng;
Lin, Horng-Chih

Publication type:

Article

Multi‐Channel, Amorphous Oxide Thin‐Film Transistor Exhibiting High Mobility of 67 cm2 V−1 s−1 and Excellent Stability.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 8, p. 1, doi. 10.1002/aelm.202400766

By:

Billah, Mohammad Masum;
Islam, Md Mobaidul;
Priyadarshi, Sunaina;
Kim, Jung Bae;
Bae, Yang Ho;
Lim, Rodney;
Fan, Dejiu;
Hung, Zero;
Yim, Dong Kil;
Choi, Soo Yong;
Lin, Youron;
Grillmayer, Juergen;
Ma, Custer;
Yang, Lynn;
Chen, Julian;
Jang, Jin

Publication type:

Article

Relation Between Thickness and TFTs Properties of HfO 2 Dielectric Layer Synthesized by Plasma-Enhanced Atomic Layer Deposition.

Published in:

Nanomaterials (2079-4991), 2025, v. 15, n. 10, p. 719, doi. 10.3390/nano15100719

By:

Chen, Qizhen;
Fu, Wanqiang;
Han, Jing;
Zhang, Xiaoying;
Lien, Shui-Yang

Publication type:

Article

Detailed Investigation of Plasticized PMMA Dielectric for Improved Performance of Organic Field-Effect Transistors.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 5, p. 2554, doi. 10.1007/s11664-024-10974-5

By:

Findik, Şaban;
Öztürk, Sadullah;
Örnek, Osman;
Köker, Raşit;
Kösemen, Arif

Publication type:

Article

N‐Acenoacenes: Synthesis and Solid‐State Properties.

Published in:

Chemistry - A European Journal, 2022, v. 28, n. 69, p. 1, doi. 10.1002/chem.202201916

By:

Wiesner, Thomas;
Pardon, Marcel;
Maier, Steffen;
Rominger, Frank;
Freudenberg, Jan;
Bunz, Uwe H. F.

Publication type:

Article

Bimetallic Ruthenium Nitrosyl Complexes with Enhanced Two‐Photon Absorption Properties for Nitric Oxide Delivery.

Published in:

Chemistry - A European Journal, 2022, v. 28, n. 62, p. 1, doi. 10.1002/chem.202201692

By:

Juarez‐Martinez, Yael;
Labra‐Vázquez, Pablo;
Enríquez‐Cabrera, Alejandro;
Leon‐Rojas, Andrés F.;
Martínez‐Bourget, Diego;
Lacroix, Pascal G.;
Tassé, Marine;
Mallet‐Ladeira, Sonia;
Farfán, Norberto;
Santillan, Rosa;
Ramos‐Ortiz, Gabriel;
Malval, Jean‐Pierre;
Malfant, Isabelle

Publication type:

Article

Cover Feature: Atomic Layer Deposition of Ternary Indium/Tin/Aluminum Oxide Thin Films, Their Characterization and Transistor Performance under Illumination. (Chem. Eur. J. 38/2021).

Published in:

Chemistry - A European Journal, 2021, v. 27, n. 38, p. 9719, doi. 10.1002/chem.202102030

By:

Büschges, M. Isabelle;
Hoffmann, Rudolf C.;
Regoutz, Anna;
Schlueter, Christoph;
Schneider, Jörg J.

Publication type:

Article

Atomic Layer Deposition of Ternary Indium/Tin/Aluminum Oxide Thin Films, Their Characterization and Transistor Performance under Illumination.

Published in:

Chemistry - A European Journal, 2021, v. 27, n. 38, p. 9791, doi. 10.1002/chem.202101126

By:

Büschges, M. Isabelle;
Hoffmann, Rudolf C.;
Regoutz, Anna;
Schlueter, Christoph;
Schneider, Jörg J.

Publication type:

Article

Front Cover: Zinc Oxide Defect Microstructure and Surface Chemistry Derived from Oxidation of Metallic Zinc: Thin‐Film Transistor and Sensor Behavior of ZnO Films and Rods (Chem. Eur. J. 17/2021).

Published in:

Chemistry - A European Journal, 2021, v. 27, n. 17, p. 5307, doi. 10.1002/chem.202005364

By:

Hoffmann, Rudolf C.;
Sanctis, Shawn;
Liedke, Maciej O.;
Butterling, Maik;
Wagner, Andreas;
Njel, Christian;
Schneider, Jörg J.

Publication type:

Article

Synthesis of C12‐Keto Saxitoxin Derivatives with Unusual Inhibitory Activity Against Voltage‐Gated Sodium Channels.

Published in:

Chemistry - A European Journal, 2020, v. 26, n. 9, p. 2025, doi. 10.1002/chem.201904184

By:

Adachi, Kanna;
Yamada, Tomoshi;
Ishizuka, Hayate;
Oki, Mana;
Tsunogae, Shunsuke;
Shimada, Noriko;
Chiba, Osamu;
Orihara, Tatsuya;
Hidaka, Masafumi;
Hirokawa, Takatsugu;
Odagi, Minami;
Konoki, Keiichi;
Yotsu‐Yamashita, Mari;
Nagasawa, Kazuo

Publication type:

Article

Overcoming consistency constrains of ITO/ZnO/P3HT:PCBM/Ag solar cell by open air annealing and its systematic stability study under inborn conditions.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 20, p. 18981, doi. 10.1007/s10854-019-02255-3

By:

Geethu, R.;
Santhosh, M. V.;
Kartha, C. Sudha;
Vijayakumar, K. P.

Publication type:

Article

Solution processed boron doped indium oxide thin-film as channel layer in thin-film transistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 20, p. 18696, doi. 10.1007/s10854-019-02222-y

By:

Arulkumar, S.;
Parthiban, S.;
Gnanaprakash, D.;
Kwon, J. Y.

Publication type:

Article

Low-temperature reducible particle-free screen-printable silver ink for the fabrication of high conductive electrodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 20, p. 18647, doi. 10.1007/s10854-019-02217-9

By:

Manjunath, G.;
Pujar, Pavan;
Gupta, Bikesh;
Gupta, Dipti;
Mandal, Saumen

Publication type:

Article

Annealing effects on the performances of Bismuth-doped Indium Zinc Oxide thin-film transistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 14, p. 12929, doi. 10.1007/s10854-019-01655-9

By:

Lin, Dong;
Zheng, Xudong;
Yang, Jianwen;
Li, Kaiwen;
Shao, Jingjing;
Zhang, Qun

Publication type:

Article

Top-gate In–Al–Zn–O thin film transistor based on organic poly(methyl methacrylate) dielectric layer.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 13, p. 11976, doi. 10.1007/s10854-019-01548-x

By:

Yue, Lan;
Meng, Fanxin;
Ren, Dasen;
Luo, Shengyun

Publication type:

Article

Employment of rapid thermal annealing for solution-processed InGaZnO thin film transistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 10, p. 8660, doi. 10.1007/s10854-018-8880-z

By:

Kwak, Hyena;
Yang, Jaehyun;
Kang, Jun-gu;
Eom, Tae-Yil;
Kim, Hyoungsub;
Lee, Hoo-Jeong;
Kang, Chiwon

Publication type:

Article

Non-ideal current drop behavior in ultra-thin inorganic a-InGaZnO thin film transistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 11, p. 8231, doi. 10.1007/s10854-017-6534-1

By:

Kang, Won;
Kim, Kyung;
Ahn, Cheol;
Cho, Sung;
Kim, Da;
Kim, Bora;
Cho, Hyung;
Kim, Yunseok

Publication type:

Article

Improvements in the performances of In-Ga-Zn-O thin-film transistors on glass substrates by annealing treatment.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 12, p. 5535, doi. 10.1007/s10854-014-2340-1

By:

Liu, Chong;
Wei, Min;
Jia, Zhuo;
Deng, Yi-Feng;
Liu, Hao;
Deng, Hong

Publication type:

Article

The effect of indium doping on photovoltaic properties of chemically synthesized zinc oxide thin-film electrodes.

Published in:

Journal of Solid State Electrochemistry, 2020, v. 24, n. 2, p. 313, doi. 10.1007/s10008-019-04438-8

By:

Tyona, M. D.;
Jambure, S. B.;
Osuji, R. U.;
Maaza, M.;
Lokhande, C. D.;
Ezema, Fabian I.

Publication type:

Article

Research of Si-ZnO Thin-Film Transistors Deposited by Atomic Layer Deposition.

Published in:

International Journal of Energy Research, 2023, v. 2023, p. 1, doi. 10.1155/2023/7261186

By:

Hong, Chaeseon;
Kim, Minjae;
Lee, Jin-Gyu;
Shao, Qingyi;
Lee, Hong-Sub;
Park, Hyung-Ho

Publication type:

Article

Enhancement of thermoelectric power factor of zinc oxide by nickel and indium dual doping.

Published in:

International Journal of Energy Research, 2022, v. 46, n. 14, p. 19574, doi. 10.1002/er.8529

By:

Soumya, Chambakkoottathil;
Pradyumnan, Puthiya Purayil

Publication type:

Article

Heat conduction and thermal expansion of copper–graphite composite as a heat sink.

Published in:

International Journal of Energy Research, 2022, v. 46, n. 8, p. 10907, doi. 10.1002/er.7891

By:

Lee, SeungHyun;
Son, Sung‐hun;
Kim, JinSun;
Yesuraj, Johnbosco;
Kim, Kibum;
Rhi, Seok‐Ho

Publication type:

Article

High‐Performance Black Phosphorus Field‐Effect Transistors with Controllable Channel Orientation.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201126

By:

Wang, Junqi;
Liu, Wei;
Wang, Chunqing

Publication type:

Article

Anion‐Vacancy‐Defect Passivation of a 2D‐Layered Tin‐Based Perovskite Thin‐Film Transistor with Sulfur Doping.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201014

By:

Cho, Jae‐Hyeok;
Go, Ji‐Young;
Bui, Tan Tan;
Mun, Seunguk;
Kim, Yunseok;
Ahn, Kyunghan;
Noh, Yong‐Young;
Kim, Myung‐Gil

Publication type:

Article

Highly Linear and Symmetric Analog Neuromorphic Synapse Based on Metal Oxide Semiconductor Transistors with Self‐Assembled Monolayer for High‐Precision Neural Network Computation.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202200554

By:

Park, Seongmin;
Seong, Suwon;
Jeon, Gilsu;
Ji, Wonjae;
Noh, Kyungmi;
Kim, Seyoung;
Chung, Yoonyoung

Publication type:

Article

Unidirectionally Aligned Donor–Acceptor Semiconducting Polymers in Floating Films for High‐Performance Unipolar n‐Channel Organic Transistors.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202201043

By:

Pandey, Manish;
Sugita, Yuya;
Toyoda, Jumpei;
Katao, Shohei;
Abe, Ryo;
Cho, Yongyoon;
Benten, Hiroaki;
Nakamura, Masakazu

Publication type:

Article

Accurate Field‐Effect Mobility and Threshold Voltage Estimation for Thin‐Film Transistors with Gate‐Voltage‐Dependent Mobility in Linear Region.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202200786

By:

Zhou, Yuchen;
Wang, Xiao;
Dodabalapur, Ananth

Publication type:

Article

Suppressing Undesired Channel Length‐Dependent Electrical Characteristics of Fully Integrated InGaZnO Thin‐Film Transistors via Defect Control Layer.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200986

By:

Kim, Kyung Min;
Yang, Jeong Suk;
Kim, Hyung Tae;
Han, Inhyo;
Jung, Sang‐Hoon;
Yang, Joon‐Young;
Ha, Yong Min;
Yoon, Soo Young;
Kim, Hyun Jae

Publication type:

Article

Reconfigurable Complementary and Combinational Logic Based on Monolithic and Single‐Crystalline Al‐Si Heterostructures.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200567

By:

Böckle, Raphael;
Sistani, Masiar;
Bažíková, Martina;
Wind, Lukas;
Sadre‐Momtaz, Zahra;
den Hertog, Martien I.;
Murphey, Corban G. E.;
Cahoon, James F.;
Weber, Walter M.

Publication type:

Article

Oxygen‐Scavenging Effects of Added Ti Layer in the TiN Gate of Metal‐Ferroelectric‐Insulator‐Semiconductor Capacitor with Al‐Doped HfO2 Ferroelectric Film (Adv. Electron. Mater. 11/2022).

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200310

By:

Lee, Yong Bin;
Kim, Beom Yong;
Park, Hyeon Woo;
Lee, Suk Hyun;
Oh, Minsik;
Ryoo, Seung Kyu;
Lee, In Soo;
Byun, Seungyong;
Shim, Doosup;
Lee, Jae Hoon;
Kim, Hani;
Kim, Kyung Do;
Park, Min Hyuk;
Hwang, Cheol Seong

Publication type:

Article

Light‐Regulated Anti‐Ambipolar Transport with Multi‐Logic States in Metal‐WSe2‐Metal Transistor.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 12, p. 1, doi. 10.1002/aelm.202200649

By:

Wang, Hanyu;
Gao, Wei;
Wen, Peiting;
Yu, He;
Huang, Ying;
Yue, Qian;
Wang, Xiaozhou;
Huo, Nengjie

Publication type:

Article

Inkjet‐Printed, Deep Subthreshold Operated Pseudo‐CMOS Inverters with High Voltage Gain and Low Power Consumption.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200528

By:

Pradhan, Jyoti Ranjan;
Singh, Manvendra;
Dasgupta, Subho

Publication type:

Article

Photo‐Synaptic Oxide Transistors with Al2O3/SiOx Stacked Gate Dielectric Exhibiting 1024 Conduction States with Good Linearity.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200494

By:

Lim, Jung Wook;
Park, Min A.;
Kim, Jieun

Publication type:

Article

The Effect of the Charge Transfer Transition of the Tetravalent Terbium on the Photostability of Oxide Thin‐Film Transistors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200187

By:

Lan, Linfeng;
Li, Xiao;
Ding, Chunchun;
Chen, Siting;
Su, Huimin;
Huang, Bo;
Chen, Baozhong;
Zhou, Hongkun;
Peng, Junbiao

Publication type:

Article

Directed Self‐Assembly for Dense Vertical III–V Nanowires on Si and Implications for Gate All‐Around Deposition.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202101388

By:

Löfstrand, Anette;
Jafari Jam, Reza;
Svensson, Johannes;
Jönsson, Adam;
Menon, Heera;
Jacobsson, Daniel;
Wernersson, Lars‐Erik;
Maximov, Ivan

Publication type:

Article

Efficient Oxygen‐Vacancy Suppression and Electrical Stabilization of Solution‐Processed In2O3:Q (Q = S, Se) Thin‐Film Transistor with Chalcogen Alloying.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101250

By:

Lee, Paul;
Le, Minh Nhut;
Kim, Gahye;
Kwon, Sung Min;
Jo, Jeong‐Wan;
Kim, Jaehyun;
Kim, Yong‐Hoon;
Park, Sung Kyu;
Ahn, Kyunghan;
Kim, Myung‐Gil

Publication type:

Article

High Mobility and Photo‐Bias Stable Metal Oxide Thin‐Film Transistors Engineered by Gradient Doping.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202100984

By:

Liu, Jia;
Liu, Suilin;
Yu, Yinyin;
Chen, Huixin;
Wang, Cuiru;
Su, Jingxia;
Liu, Chaoyang;
Zhang, Yuxuan;
Han, Jian;
Shao, Guosheng;
Yao, Zhiqiang

Publication type:

Article

Excessive Oxygen Peroxide Model‐Based Analysis of Positive‐Bias‐Stress and Negative‐Bias‐Illumination‐Stress Instabilities in Self‐Aligned Top‐Gate Coplanar In–Ga–Zn–O Thin‐Film Transistors (Adv. Electron. Mater. 5/2022)

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101062

By:

Choi, Sungju;
Park, Jingyu;
Hwang, Seong‐Hyun;
Kim, Changwook;
Kim, Yong‐Sung;
Oh, Saeroonter;
Baeck, Ju Heyuck;
Bae, Jong Uk;
Noh, Jiyong;
Lee, Seok‐Woo;
Park, Kwon‐Shik;
Kim, Jeom‐Jae;
Yoon, Soo Young;
Kwon, Hyuck‐In;
Kim, Dae Hwan

Publication type:

Article

Subthreshold Swing of 59 mV decade−1 in Nanoscale Flexible Ultralow‐Voltage Organic Transistors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101215

By:

Geiger, Michael;
Lingstädt, Robin;
Wollandt, Tobias;
Deuschle, Julia;
Zschieschang, Ute;
Letzkus, Florian;
Burghartz, Joachim N.;
van Aken, Peter A.;
Weitz, R. Thomas;
Klauk, Hagen

Publication type:

Article

Excessive Oxygen Peroxide Model‐Based Analysis of Positive‐Bias‐Stress and Negative‐Bias‐Illumination‐Stress Instabilities in Self‐Aligned Top‐Gate Coplanar In–Ga–Zn–O Thin‐Film Transistors

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101062

By:

Choi, Sungju;
Park, Jingyu;
Hwang, Seong‐Hyun;
Kim, Changwook;
Kim, Yong‐Sung;
Oh, Saeroonter;
Baeck, Ju Heyuck;
Bae, Jong Uk;
Noh, Jiyong;
Lee, Seok‐Woo;
Park, Kwon‐Shik;
Kim, Jeom‐Jae;
Yoon, Soo Young;
Kwon, Hyuck‐In;
Kim, Dae Hwan

Publication type:

Article

Ultrathin Al‐Assisted Al2O3 Passivation Layer for High‐Stability Tungsten Diselenide Transistors and Their Ambipolar Inverter (Adv. Electron. Mater. 4/2022).

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101012

By:

Cho, Haewon;
Pujar, Pavan;
Cho, Yong In;
Hong, Seongin;
Kim, Sunkook

Publication type:

Article

Ultrathin Al‐Assisted Al2O3 Passivation Layer for High‐Stability Tungsten Diselenide Transistors and Their Ambipolar Inverter.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101012

By:

Cho, Haewon;
Pujar, Pavan;
Cho, Yong In;
Hong, Seongin;
Kim, Sunkook

Publication type:

Article

Recent Progress of Solution‐Processed Copper‐based p‐Channel Thin‐Film Transistors.

Published in:: Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202100893
Publication type:: Article

Schottky Diode with Asymmetric Metal Contacts on WS2.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202100941

By:

Kim, Jihoon;
Venkatesan, A.;
Phan, Nhat Anh Nguyen;
Kim, Yewon;
Kim, Hanul;
Whang, Dongmok;
Kim, Gil‐Ho

Publication type:

Article

A Spiking Stochastic Neuron Based on Stacked InGaZnO Memristors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100918

By:

Mao, Huiwu;
He, Yongli;
Chen, Chunsheng;
Zhu, Li;
Zhu, Yixin;
Zhu, Ying;
Ke, Shuo;
Wang, Xiangjing;
Wan, Changjin;
Wan, Qing

Publication type:

Article

Observation of the Pinch‐Off Effect during Electrostatically Gating the Metal‐Insulator Transition.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100842

By:

Yajima, Takeaki;
Toriumi, Akira

Publication type:

Article

WSe2 N‐Type Negative Capacitance Field‐Effect Transistor with Indium Low Schottky Barrier Contact.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100829

By:

Dong, Jianguo;
Sheng, Zhe;
Yu, Rui;
Hu, Wennan;
Wang, Yue;
Sun, Haoran;
Zhang, David Wei;
Zhou, Peng;
Zhang, Zengxing

Publication type:

Article