Application of high-k gate dielectric multilayer Al<sub>2</sub>O<sub>3</sub>/TiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> anodized film in IGZO thin-film transistors.
- Published in:
- 2025
- By:
- Publication type:
- Conference Paper/Materials
Works matching DE "INDIUM gallium zinc oxide"
Results: 988
1
2
Optimizing the Inclined Process of Gallium-Doped ZnO Thin Films for Touch-Sensing Applications.
- Published in:
- Journal of Electronic Materials, 2025, v. 54, n. 9, p. 7180, doi. 10.1007/s11664-025-12129-6
- By:
- Publication type:
- Article
3
Controlled Microwave Processing of IGZO Thin Films for Improved Optical and Electrical Properties.
- Published in:
- JOM: The Journal of The Minerals, Metals & Materials Society (TMS), 2015, v. 67, n. 7, p. 1624, doi. 10.1007/s11837-015-1453-1
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- Publication type:
- Article
4
Improved Mobility and Transmittance of Room-Temperature-Deposited Amorphous Indium Gallium Zinc Oxide (a-IGZO) Films with Low-Temperature Postfabrication Anneals.
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- JOM: The Journal of The Minerals, Metals & Materials Society (TMS), 2013, v. 65, n. 4, p. 519, doi. 10.1007/s11837-013-0569-4
- By:
- Publication type:
- Article
5
Effect of Polypyrimidine Structure and Purity of Semiconducting SWCNTs on Thin‐Film Transistor Performance.
- Published in:
- Macromolecular Chemistry & Physics, 2021, v. 222, n. 18, p. 1, doi. 10.1002/macp.202100196
- By:
- Publication type:
- Article
6
Flüssig/Flüssig‐Extraktion von Indium aus sauren Lösungen.
- Published in:
- Chemie Ingenieur Technik (CIT), 2019, v. 91, n. 11, p. 1681, doi. 10.1002/cite.201900065
- By:
- Publication type:
- Article
7
Nanosheet transistors: materials, devices, systems and applications.
- Published in:
- Journal of Materials Science, 2025, v. 60, n. 16, p. 6769, doi. 10.1007/s10853-025-10827-4
- By:
- Publication type:
- Article
8
Oxide-based synaptic transistors gated by solid biopolymer electrolytes.
- Published in:
- Journal of Materials Science, 2023, v. 58, n. 28, p. 11740, doi. 10.1007/s10853-023-08746-3
- By:
- Publication type:
- Article
9
Synthesis and electrical characterization of poly[(linoleic acid)‐g‐(styrene)‐g‐(ε‐caprolactone)] graft copolymers as gate insulator for OFET devices.
- Published in:
- Polymer International, 2023, v. 72, n. 8, p. 727, doi. 10.1002/pi.6531
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- Publication type:
- Article
10
An Update of the Sanguinarine and Benzophenanthridine Alkaloids' Biosynthesis and Their Applications.
- Published in:
- Molecules, 2022, v. 27, n. 4, p. 1378, doi. 10.3390/molecules27041378
- By:
- Publication type:
- Article
11
Thiophene-Based Covalent Organic Frameworks: Synthesis, Photophysics and Light-Driven Applications.
- Published in:
- Molecules, 2021, v. 26, n. 24, p. 7666, doi. 10.3390/molecules26247666
- By:
- Publication type:
- Article
12
Sol-Gel Composites-Based Flexible and Transparent Amorphous Indium Gallium Zinc Oxide Thin-Film Synaptic Transistors for Wearable Intelligent Electronics.
- Published in:
- Molecules, 2021, v. 26, n. 23, p. 7233, doi. 10.3390/molecules26237233
- By:
- Publication type:
- Article
13
Inkjet-Printed Molybdenum Disulfide and Nitrogen-Doped Graphene Active Layer High On/Off Ratio Transistors.
- Published in:
- Molecules, 2020, v. 25, n. 5, p. 1081, doi. 10.3390/molecules25051081
- By:
- Publication type:
- Article
14
Electrical Conductivity of Sodium Sulfate-Based Phases.
- Published in:
- Inorganic Materials, 2022, v. 58, n. 8, p. 806, doi. 10.1134/S0020168522080118
- By:
- Publication type:
- Article
15
Light‐to‐Spike Encoding Using Indium‐Gallium‐Zinc Oxide Phototransistor for all‐Color Image Recognition with Dynamic Range and Precision Tunability.
- Published in:
- Small Methods, 2025, v. 9, n. 4, p. 1, doi. 10.1002/smtd.202401502
- By:
- Publication type:
- Article
16
Reliable Operation in High‐Mobility Indium Oxide Thin Film Transistors (Small Methods 1/2025).
- Published in:
- Small Methods, 2025, v. 9, n. 1, p. 1, doi. 10.1002/smtd.202570004
- By:
- Publication type:
- Article
17
Tailoring Subthreshold Swing in A‐IGZO Thin‐Film Transistors for Amoled Displays: Impact of Conversion Mechanism on Peald Deposition Sequences (Small Methods 8/2024).
- Published in:
- Small Methods, 2024, v. 8, n. 8, p. 1, doi. 10.1002/smtd.202470043
- By:
- Publication type:
- Article
18
Tailoring Subthreshold Swing in A‐IGZO Thin‐Film Transistors for Amoled Displays: Impact of Conversion Mechanism on Peald Deposition Sequences.
- Published in:
- Small Methods, 2024, v. 8, n. 8, p. 1, doi. 10.1002/smtd.202301185
- By:
- Publication type:
- Article
19
Approaches for 3D Integration Using Plasma‐Enhanced Atomic‐Layer‐Deposited Atomically‐Ordered InGaZnO Transistors with Ultra‐High Mobility.
- Published in:
- Small Methods, 2023, v. 7, n. 10, p. 1, doi. 10.1002/smtd.202300549
- By:
- Publication type:
- Article
20
High Mobility IZTO Thin‐Film Transistors Based on Spinel Phase Formation at Low Temperature through a Catalytic Chemical Reaction (Small Methods 7/2023).
- Published in:
- Small Methods, 2023, v. 7, n. 7, p. 1, doi. 10.1002/smtd.202370036
- By:
- Publication type:
- Article
21
High Mobility IZTO Thin‐Film Transistors Based on Spinel Phase Formation at Low Temperature through a Catalytic Chemical Reaction.
- Published in:
- Small Methods, 2023, v. 7, n. 7, p. 1, doi. 10.1002/smtd.202201522
- By:
- Publication type:
- Article
22
Damage‐Free Charge Transfer Doping of 2D Transition Metal Dichalcogenide Channels by van der Waals Stamping of MoO<sub>3</sub> and LiF.
- Published in:
- Small Methods, 2022, v. 6, n. 3, p. 1, doi. 10.1002/smtd.202101073
- By:
- Publication type:
- Article
23
Electrically and Optically Controllable p–n Junction Memtransistor Based on an Al<sub>2</sub>O<sub>3</sub> Encapsulated 2D Te/ReS<sub>2</sub> van der Waals Heterostructure.
- Published in:
- Small Methods, 2021, v. 5, n. 12, p. 1, doi. 10.1002/smtd.202101303
- By:
- Publication type:
- Article
24
Foldable and Recyclable Iontronic Cellulose Nanopaper for Low‐Power Paper Electronics.
- Published in:
- Advanced Sustainable Systems, 2022, v. 6, n. 9, p. 1, doi. 10.1002/adsu.202200177
- By:
- Publication type:
- Article
25
Investigations of the optical and electronic effects of silicon and indium co-doping on ZnO thin films deposited by spray pyrolysis.
- Published in:
- Zeitschrift für Naturforschung B: A Journal of Chemical Sciences, 2020, v. 75, n. 1/2, p. 23, doi. 10.1515/znb-2019-0196
- By:
- Publication type:
- Article
26
On the Possibility of Applying Fluoride Neodymium-Activated Crystals as Light-Controlled Gates for ArF Laser Radiation (193 nm).
- Published in:
- Optics & Spectroscopy, 2021, v. 129, n. 4, p. 426, doi. 10.1134/S0030400X21040032
- By:
- Publication type:
- Article
27
Sub-0.5 V Highly Stable Aqueous Salt Gated Metal Oxide Electronics.
- Published in:
- Scientific Reports, 2015, p. 13088, doi. 10.1038/srep13088
- By:
- Publication type:
- Article
28
Deep ultraviolet laser direct write for patterning sol-gel InGaZnO semiconducting micro/nanowires and improving field-effect mobility.
- Published in:
- Scientific Reports, 2015, p. 10490, doi. 10.1038/srep10490
- By:
- Publication type:
- Article
29
Critical Metals Ga, Ge and In: Experimental Evidence for Smelter Recovery Improvements.
- Published in:
- Minerals (2075-163X), 2019, v. 9, n. 6, p. 367, doi. 10.3390/min9060367
- By:
- Publication type:
- Article
30
Improved Process Stability and Light Detection in Phototransistors via Inverted MoS<sub>2</sub>/a‐IGZO Heterojunction Integration.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2025, v. 222, n. 3, p. 1, doi. 10.1002/pssa.202400536
- By:
- Publication type:
- Article
31
Improved Performance and Bias Stability of Indium‐Tin‐Zinc‐Oxide Thin‐Film Transistors Enabled by an Oxygen‐Compensated Capping Layer.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 2, p. 1, doi. 10.1002/pssa.202300544
- By:
- Publication type:
- Article
32
A Threshold‐Voltage and Drain–Source Current Model for Double‐Channel Al<sub>x</sub>Ga<sub>1−x</sub>N/GaN/Al<sub>y</sub>Ga<sub>1−y</sub>N/GaN High‐Electron‐Mobility Transistors.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 23, p. 1, doi. 10.1002/pssa.202300413
- By:
- Publication type:
- Article
33
Comparative Study of Surface Activation Steps for Thermally Grown Oxide Interface and Optimal Silanization.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 22, p. 1, doi. 10.1002/pssa.202300294
- By:
- Publication type:
- Article
34
Recent Progress of E‐mode Gallium Nitride Metal–Insulator–Semiconductor ‐High Electron Mobility Transistors with Hybrid Ferroelectric Charge Trap Gate (FEG‐HEMT) for Power Switching Applications.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202370036
- By:
- Publication type:
- Article
35
Recent Progress of E‐mode Gallium Nitride Metal–Insulator–Semiconductor ‐High Electron Mobility Transistors with Hybrid Ferroelectric Charge Trap Gate (FEG‐HEMT) for Power Switching Applications.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202370036
- By:
- Publication type:
- Article
36
Effect of Heat Treatment on Zirconium Oxide High‐k Gate Dielectric in Silicon‐Based Metal Oxide Semiconductor Capacitors.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 9, p. 1, doi. 10.1002/pssa.202200903
- By:
- Publication type:
- Article
37
A Comparative Study on Self‐Aligned Top‐Gate Thin‐Film Transistors with Silicon Nitride as the Interlayer.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 7, p. 1, doi. 10.1002/pssa.202200749
- By:
- Publication type:
- Article
38
A Hybrid Schottky–Ohmic Drain Contact for Thermally Stressed Beta‐Gallium Oxide Field‐Effect Transistors.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 5, p. 1, doi. 10.1002/pssa.202200596
- By:
- Publication type:
- Article
39
Enhanced Electrical Performance and Bias‐Stress Stability of Solution‐Processed Bilayer Metal Oxide Thin‐Film Transistors.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 22, p. 1, doi. 10.1002/pssa.202200311
- By:
- Publication type:
- Article
40
Delta‐Doped β‐(Al<sub>0.17</sub>Ga<sub>0.83</sub>)<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> Double‐Channel Heterostructure MODFETs.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 20, p. 1, doi. 10.1002/pssa.202100842
- By:
- Publication type:
- Article
41
Tunable‐Conduction‐Band In–Zn–O‐Based Transparent Conductive Oxide Deposited at Room Temperature.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 13, p. 1, doi. 10.1002/pssa.202200061
- By:
- Publication type:
- Article
42
β‐(Al<sub>0.17</sub>Ga<sub>0.83</sub>)<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> Delta‐Doped Heterostructure MODFETs with an Ultrathin Spacer Layer and a Back‐Barrier Layer: A Comprehensive Technology Computer‐Aided Design Analysis
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 12, p. 1, doi. 10.1002/pssa.202100732
- By:
- Publication type:
- Article
43
Multilayer MoS<sub>2</sub> Back‐Gate Transistors with ZrO<sub>2</sub> Dielectric Layer Optimization for Low‐Power Electronics.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 10, p. 1, doi. 10.1002/pssa.202100760
- By:
- Publication type:
- Article
44
Enhanced Electrical Performance and Stability of La‐Doped Indium Oxide‐Based Thin‐Film Transistors and Application Explorations.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 3, p. 1, doi. 10.1002/pssa.202100590
- By:
- Publication type:
- Article
45
Electrical Properties of Selectively Deposited Graphene‐Like Film on Silicon Oxide/Silicon Structures Preirradiated with Low Energy Electrons.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 3, p. 1, doi. 10.1002/pssa.202100208
- By:
- Publication type:
- Article
46
A Study on the Effect of Base‐Reactant in Low‐Temperature Atomic Layer Deposition of Zinc Oxide.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 24, p. 1, doi. 10.1002/pssa.202100338
- By:
- Publication type:
- Article
47
Photocurrent Generation Mechanisms in Molybdenum‐Contacted Semiconducting Black Phosphorus and Contributions from the Photobolometric Effect.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 20, p. 1, doi. 10.1002/pssa.202100196
- By:
- Publication type:
- Article
48
The Potassium‐Assisted P‐Type Characteristics of Tin Oxide in Solution‐Processed High‐Performance Metal Oxide Thin‐Film Transistors.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 18, p. 1, doi. 10.1002/pssa.202100267
- By:
- Publication type:
- Article
49
The Potassium‐Assisted P‐Type Characteristics of Tin Oxide in Solution‐Processed High‐Performance Metal Oxide Thin‐Film Transistors.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 18, p. 1, doi. 10.1002/pssa.202100267
- By:
- Publication type:
- Article
50
Effect of Hydrogen Doping on the Gate‐Tunable Memristive Behavior of Zinc Oxide Films with and without F or N Doping.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 16, p. 1, doi. 10.1002/pssa.202000702
- By:
- Publication type:
- Article