Works matching DE "INDIUM gallium zinc oxide"


Results: 986
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    Multi‐Channel, Amorphous Oxide Thin‐Film Transistor Exhibiting High Mobility of 67 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> and Excellent Stability.

    Published in:
    Advanced Electronic Materials, 2025, v. 11, n. 8, p. 1, doi. 10.1002/aelm.202400766
    By:
    • Billah, Mohammad Masum;
    • Islam, Md Mobaidul;
    • Priyadarshi, Sunaina;
    • Kim, Jung Bae;
    • Bae, Yang Ho;
    • Lim, Rodney;
    • Fan, Dejiu;
    • Hung, Zero;
    • Yim, Dong Kil;
    • Choi, Soo Yong;
    • Lin, Youron;
    • Grillmayer, Juergen;
    • Ma, Custer;
    • Yang, Lynn;
    • Chen, Julian;
    • Jang, Jin
    Publication type:
    Article
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    Bimetallic Ruthenium Nitrosyl Complexes with Enhanced Two‐Photon Absorption Properties for Nitric Oxide Delivery.

    Published in:
    Chemistry - A European Journal, 2022, v. 28, n. 62, p. 1, doi. 10.1002/chem.202201692
    By:
    • Juarez‐Martinez, Yael;
    • Labra‐Vázquez, Pablo;
    • Enríquez‐Cabrera, Alejandro;
    • Leon‐Rojas, Andrés F.;
    • Martínez‐Bourget, Diego;
    • Lacroix, Pascal G.;
    • Tassé, Marine;
    • Mallet‐Ladeira, Sonia;
    • Farfán, Norberto;
    • Santillan, Rosa;
    • Ramos‐Ortiz, Gabriel;
    • Malval, Jean‐Pierre;
    • Malfant, Isabelle
    Publication type:
    Article
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    Oxygen‐Scavenging Effects of Added Ti Layer in the TiN Gate of Metal‐Ferroelectric‐Insulator‐Semiconductor Capacitor with Al‐Doped HfO<sub>2</sub> Ferroelectric Film (Adv. Electron. Mater. 11/2022).

    Published in:
    Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200310
    By:
    • Lee, Yong Bin;
    • Kim, Beom Yong;
    • Park, Hyeon Woo;
    • Lee, Suk Hyun;
    • Oh, Minsik;
    • Ryoo, Seung Kyu;
    • Lee, In Soo;
    • Byun, Seungyong;
    • Shim, Doosup;
    • Lee, Jae Hoon;
    • Kim, Hani;
    • Kim, Kyung Do;
    • Park, Min Hyuk;
    • Hwang, Cheol Seong
    Publication type:
    Article
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    Excessive Oxygen Peroxide Model‐Based Analysis of Positive‐Bias‐Stress and Negative‐Bias‐Illumination‐Stress Instabilities in Self‐Aligned Top‐Gate Coplanar In–Ga–Zn–O Thin‐Film Transistors (Adv. Electron. Mater. 5/2022)

    Published in:
    Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101062
    By:
    • Choi, Sungju;
    • Park, Jingyu;
    • Hwang, Seong‐Hyun;
    • Kim, Changwook;
    • Kim, Yong‐Sung;
    • Oh, Saeroonter;
    • Baeck, Ju Heyuck;
    • Bae, Jong Uk;
    • Noh, Jiyong;
    • Lee, Seok‐Woo;
    • Park, Kwon‐Shik;
    • Kim, Jeom‐Jae;
    • Yoon, Soo Young;
    • Kwon, Hyuck‐In;
    • Kim, Dae Hwan
    Publication type:
    Article
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    Excessive Oxygen Peroxide Model‐Based Analysis of Positive‐Bias‐Stress and Negative‐Bias‐Illumination‐Stress Instabilities in Self‐Aligned Top‐Gate Coplanar In–Ga–Zn–O Thin‐Film Transistors

    Published in:
    Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101062
    By:
    • Choi, Sungju;
    • Park, Jingyu;
    • Hwang, Seong‐Hyun;
    • Kim, Changwook;
    • Kim, Yong‐Sung;
    • Oh, Saeroonter;
    • Baeck, Ju Heyuck;
    • Bae, Jong Uk;
    • Noh, Jiyong;
    • Lee, Seok‐Woo;
    • Park, Kwon‐Shik;
    • Kim, Jeom‐Jae;
    • Yoon, Soo Young;
    • Kwon, Hyuck‐In;
    • Kim, Dae Hwan
    Publication type:
    Article
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