Works matching DE "INDIUM gallium phosphide"
Results: 23
Luminescence coupling effects on multijunction solar cell external quantum efficiency measurement.
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- Progress in Photovoltaics, 2013, v. 21, n. 3, p. 344, doi. 10.1002/pip.1215
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A 20 GHz Low Phase Noise Push-Push VCO in InGaP GaAs HBT Technology.
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- Microwave Journal, 2018, v. 61, n. 5, p. 102
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Evaluation of subcell power conversion efficiencies of radiation-damaged triple-junction solar cells using photoluminescence decays.
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- Progress in Photovoltaics, 2017, v. 25, n. 12, p. 1005, doi. 10.1002/pip.2912
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Effect of Sb on the quantum efficiency of GaInP solar cells.
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- Progress in Photovoltaics, 2016, v. 24, n. 8, p. 1116, doi. 10.1002/pip.2777
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InGaP//GaAs//c-Si 3-junction solar cells employing spectrum-splitting system.
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- Progress in Photovoltaics, 2016, v. 24, n. 7, p. 1016, doi. 10.1002/pip.2753
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Analysis of perimeter recombination in the subcells of GaInP/GaAs/Ge triple-junction solar cells.
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- Progress in Photovoltaics, 2015, v. 23, n. 7, p. 874, doi. 10.1002/pip.2501
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InGaP 670-nm laser therapy combined with a hydroalcoholic extract of Solidago chilensis Meyen in burn injuries.
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- Lasers in Medical Science, 2015, v. 30, n. 3, p. 1069, doi. 10.1007/s10103-014-1707-0
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Effects of laser irradiation (670-nm InGaP and 830-nm GaAlAs) on burn of second-degree in rats.
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- Lasers in Medical Science, 2014, v. 29, n. 5, p. 1685, doi. 10.1007/s10103-014-1573-9
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Experimental studies of the effects of atomic ordering in epitaxial GaInP alloys on their structural and morphological properties.
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- Semiconductors, 2017, v. 51, n. 8, p. 1087, doi. 10.1134/S1063782617080280
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Optimization of InGaP/GaAs/InGaAs heterolasers with tunnel-coupled waveguides.
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- Semiconductors, 2015, v. 49, n. 12, p. 1571, doi. 10.1134/S1063782615120180
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Comparative investigation of InGaP/GaAs/GaAsBi and InGaP/GaAs heterojunction bipolar transistors.
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- Semiconductors, 2015, v. 49, n. 10, p. 1361, doi. 10.1134/S1063782615100279
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Site-Controlled Growth of Single InP QDs.
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- Semiconductors, 2015, v. 49, n. 8, p. 1095, doi. 10.1134/S1063782615080230
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Effect of postgrowth techniques on the characteristics of triple-junction InGaP/Ga(In)As/Ge solar cells.
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- Semiconductors, 2014, v. 48, n. 9, p. 1217, doi. 10.1134/S1063782614090024
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Photoelectric determination of the series resistance of multijunction solar cells.
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- Semiconductors, 2012, v. 46, n. 8, p. 1051, doi. 10.1134/S1063782612080143
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Comparative study of InGaP/GaAs high electron mobility transistors with upper and lower delta-doped supplied layers.
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- Semiconductors, 2012, v. 46, n. 4, p. 514, doi. 10.1134/S1063782612040227
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High-temperature electric contacts for AlGaInP/GaInP photon-enhanced thermionic emission cathodes.
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- Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 14, p. 945, doi. 10.1049/el.2017.0755
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Characterization of Gallium Indium Phosphide and Progress of Aluminum Gallium Indium Phosphide System Quantum-Well Laser Diode.
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- Materials (1996-1944), 2017, v. 10, n. 8, p. 875, doi. 10.3390/ma10080875
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Photovoltaic modules with cylindrical waveguides in a system for the secondary concentration of solar radiation.
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- Technical Physics, 2013, v. 58, n. 9, p. 1323, doi. 10.1134/S1063784213090041
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Analytical Modeling of Dual-Junction Tandem Solar Cells Based on an InGaP/GaAs Heterojunction Stacked on a Ge Substrate.
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- Journal of Electronic Materials, 2019, v. 48, n. 6, p. 4107, doi. 10.1007/s11664-019-07180-z
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Optimum Design of ARC-less InGaP/GaAs DJ Solar Cell with Hetero Tunnel Junction.
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- Journal of Electronic Materials, 2018, v. 47, n. 7, p. 3585, doi. 10.1007/s11664-018-6203-z
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Transient characteristics of the InGaP-GaAs-InGaAs-GaAs transistor laser.
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- Optical & Quantum Electronics, 2013, v. 45, n. 6, p. 543, doi. 10.1007/s11082-013-9680-6
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An Antireflection Coating of a Germanium Subcell in GaInP/GaAs/Ge Solar Cells.
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- Technical Physics Letters, 2018, v. 44, n. 11, p. 1042, doi. 10.1134/S1063785018110263
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Influence of InGaP/Ge heterostructure on diffusion of phosphorus in germanium during the formation of multiple solar cells.
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- Technical Physics Letters, 2013, v. 39, n. 1, p. 27, doi. 10.1134/S1063785013010173
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