Works about INDIUM gallium nitride

Results: 524

Hierarchical InGaN Nanowires for High-Efficiency Solar Water Splitting.

Published in:

Microscopy & Microanalysis, 2019, p. 1670, doi. 10.1017/S1431927618008838

By:

Gim, Jiseok;
Yalisove, Reed;
Chu, Sheng;
Park, Yongbum;
Vanka, Srinivas;
Wang, Yichen;
Wang, Yongjie;
Ra, Yong-Ho;
Guo, Hong;
Shih, Ishiang;
Mi, Zetian;
Hovden, Robert

Publication type:

Article

Color tuning of YAG:Ce<sup>3+</sup> phosphor-in-glass nanocomposites using a Sm<sup>3+</sup> doped tellurite glass.

Published in:

Microscopy & Microanalysis, 2019, p. 1552, doi. 10.1017/S1431927618008243

By:

Salazar-Valenzuela, E. A.;
Alvarado-Rivera, J.;
Flores-Pacheco, A.;
Álvarez-Ramos, M. E.

Publication type:

Article

Quantum dot activated indium gallium nitride on silicon as photoanode for solar hydrogen generation.

Published in:

Communications Chemistry, 2019, v. 2, n. 1, p. N.PAG, doi. 10.1038/s42004-018-0105-0

By:

Kumar, Praveen;
Devi, Pooja;
Jain, Rishabh;
Shivaprasad, S. M.;
Sinha, R. K.;
Zhou, Guofu;
Nötzel, Richard

Publication type:

Article

Modeling on Monolithic Integration Structure of AlGaN/InGaN/GaN High Electron Mobility Transistors and LEDs: 2DEG Density and Radiative Recombination.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 5, p. 1087, doi. 10.3390/electronics12051087

By:

An, Yuan;
Ren, Kailin;
Yin, Luqiao;
Zhang, Jianhua

Publication type:

Article

Impact of Output Conductance on Current-Gain Cut-Off Frequency in In x Ga 1-x As/In 0.52 Al 0.48 As Quantum-Well High-Electron-Mobility Transistors on InP Substrate.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 2, p. 259, doi. 10.3390/electronics12020259

By:

Kim, Hyo-Jin;
Lee, In-Geun;
Jo, Hyeon-Bhin;
Rho, Tae-Beom;
Tsutsumi, Takuya;
Sugiyama, Hiroki;
Matsuzaki, Hideaki;
Lee, Jae-Hak;
Kim, Tae-Woo;
Kim, Dae-Hyun

Publication type:

Article

Numerical Model of Current Flow and Thermal Phenomena in Lateral GaN/InGaN LEDs.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 24, p. 3127, doi. 10.3390/electronics10243127

By:

Lisik, Zbigniew;
Raj, Ewa;
Podgórski, Jacek

Publication type:

Article

Improving Emission Uniformity of InGaN/GaN-Based Vertical LEDs by Using Reflective ITO/Ag n-Contact.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 8, p. 975, doi. 10.3390/electronics10080975

By:

Yum, Woong-Sun;
Koo, Ji-Hyun;
Lee, Dae-Hee;
Kim, Young-Hoon;
Jeong, Young-Kyu;
Jung, Se-Yeon;
Lee, Sang-Youl;
Jeong, Hwan-Hee;
Seong, Tae-Yeon

Publication type:

Article

Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers.

Published in:

Scientific Reports, 2015, p. 7744, doi. 10.1038/srep07744

By:

Botton, Gianluigi A.;
Nguyen, Hieu Pham Trung;
Shih, Ishiang;
Liu, Xianhe;
Connie, Ashfiqua T.;
Djavid, Mehrdad;
Sadaf, Sharif;
Wang, Qi;
Mi, Zetian;
Woo, Steffi Y.

Publication type:

Article

Indium segregation measured in InGaN quantum well layer.

Published in:

Scientific Reports, 2014, p. 1, doi. 10.1038/srep06734

By:

Zhen Deng;
Yang Jiang;
Wenxin Wang;
Liwen Cheng;
Wei Li;
Wei Lu;
Haiqiang Jia;
Wuming Liu;
Junming Zhou;
Hong Chen

Publication type:

Article

CORRIGENDUM: A novel wavelength-adjusting method in InGaN-based lightemitting diodes.

Published in:: 2014
Publication type:: Correction Notice

Author Correction: Crystal structure and optical properties of a high-density InGaN nanoumbrella array as a white light source without phosphors.

Published in:

2021

By:

Kouno, Tetsuya;
Sakai, Masaru;
Kishino, Katsumi;
Kikuchi, Akihiko;
Umehara, Naoki;
Hara, Kazuhiko

Publication type:

Correction Notice

Properties of the Original Electron-Irradiated LEDs Homojunction GaP, GaAsP and Heterojunction InGaN Structures.

Published in:

Journal of Nano- & Electronic Physics, 2024, v. 16, n. 2, p. 1, doi. 10.21272/jnep.16(2).02030

By:

Zahorodnia, T. M.;
Melnychenko, O. V.;
Tartachnyk, V. P.;
Chumak, M. E.

Publication type:

Article

Effect of Intrinsic Layer Thickness on PIN Structure for Tandem Solar Cell Based on Indium Gallium Nitride Using AMPS -1D.

Published in:

Journal of Nano- & Electronic Physics, 2018, v. 10, n. 4, p. 1, doi. 10.21272/jnep.10(4).04013

By:

Souilah, Omar;
Benzair, A.;
Dennai, B.;
Khachab, H.

Publication type:

Article

Model of Band Diagram LED White Light in the System of GaN/InGaN.

Published in:

Journal of Nano- & Electronic Physics, 2015, v. 7, n. 4, p. 04069-1

By:

Holovaty, Yu. P.;
Kosushkin, V. G.;
Khahaev, N. A.;
Romanov, D. A.;
Chervyakov, L. M.;
Naimi, E. K.;
Kozhitov, S. L.

Publication type:

Article

An Approach Toward Broader Emission Bands in Semipolar InGaN Quantum Wells on Convex Lens‐Shaped GaN Microstructures via Lower‐Temperature Growth.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400110

By:

Fukushige, Shogo;
Matsuda, Yoshinobu;
Funato, Mitsuru;
Kawakami, Yoichi

Publication type:

Article

Elimination of V‐Shaped Pits in Thick InGaN Layers via Ammonia‐Assisted Face‐to‐Face Annealing.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400052

By:

Nakata, Atsuto;
Sasaki, Ayano;
Kurai, Satoshi;
Okada, Narihito;
Yamada, Yoichi

Publication type:

Article

High‐Performance and Temperature‐Stable InGaN Single‐Quantum‐Well Red Light‐Emitting Diodes via Selective Hydrogen Passivation.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400048

By:

Altinkaya, Cesur;
Kirilenko, Pavel;
Iida, Daisuke;
Ohkawa, Kazuhiro

Publication type:

Article

High Efficiency of 5 μm‐Diameter Blue Micro‐Light‐Emitting Diodes.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400027

By:

Deng, Chuhan;
Chen, Zhizhong;
Dong, Boyan;
Pan, Zuojian;
Zhang, Haodong;
Chen, Yian;
Li, Yuchen;
Wang, Daqi;
Hu, Ling;
Chen, Weihua;
Jiao, Fei;
Kang, Xiangning;
Yuan, Lin;
Zhu, Jianfeng;
Xia, Chenhui;
Wang, Qi;
Zhang, Guoyi;
Shen, Bo

Publication type:

Article

High‐Speed GaN‐Based 405 nm Violet Superluminescent Diode with Tilted Facet for Visible Light Communications.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 13, p. 1, doi. 10.1002/pssa.202300670

By:

Dong, Mengxi;
Yi, Shulan;
Wang, Junfei;
Ma, Chicheng;
Li, Dong;
Wang, Shanshan;
Hou, Yuqi;
Li, Ziwei;
Zhang, Junwen;
Shi, Jianyang;
Chi, Nan;
Shen, Chao

Publication type:

Article

Asymmetric Gate and SiC Substrate Grooved InGaN Back‐Barrier AlGaN/GaN HEMTs for High‐Power RF Applications.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 5, p. 1, doi. 10.1002/pssa.202300708

By:

Parvez, Bazila;
Sahu, Jyoti;
Basak, Subhajit;
Patil, Mahalaxmi;
Sahu, Arpit;
Garg, Gaurav;
Ganguly, Swaroop;
Saha, Dipankar

Publication type:

Article

Emission Mechanism of Light‐Emitting Diode Structures with Red, Green, and Blue Active Layers Separated by Si‐Doped Interlayers.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 18, p. 1, doi. 10.1002/pssa.202300181

By:

Okuno, Koji;
Goshonoo, Koichi;
Ohya, Masaki

Publication type:

Article

Characterization of Lateral and Longitudinal Mode Competition in Blue InGaN Broad‐Ridge Laser Diodes.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200751

By:

Uhlig, Lukas;
Kunzmann, Dominic J.;
Schwarz, Ulrich T.

Publication type:

Article

Bright Emission at Reverse Bias After Trailing Edge of Driving Pulse in Wide InGaN Quantum Wells.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202300042

By:

Tepaß, Jannina;
Uhlig, Lukas;
Hajdel, Mateusz;
Muziol, Grzegorz;
Schwarz, Ulrich T.

Publication type:

Article

Characterization of Lateral and Longitudinal Mode Competition in Blue InGaN Broad‐Ridge Laser Diodes.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200751

By:

Uhlig, Lukas;
Kunzmann, Dominic J.;
Schwarz, Ulrich T.

Publication type:

Article

Performance Improvement of InGaN Red Light‐Emitting Diode by Using V‐Pits Layer and Step‐Graded GaN Barrier.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 13, p. 1, doi. 10.1002/pssa.202300086

By:

Jia, Chuanyu;
Shen, Chunliang;
Wang, Qi

Publication type:

Article

Improved Performance of InGaN/AlGaN Multiple‐Quantum‐Well Near‐UV Light‐Emitting Diodes with Convex Barriers and Staggered Wells.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 19, p. 1, doi. 10.1002/pssa.202200316

By:

Cai, Li-E.;
Xu, Chao-Zhi;
Lin, Hao-Xiang;
Zheng, Jin-Jian;
Cheng, Zai-Jun;
Xiong, Fei-Bing;
Ren, Peng-Peng;
Chen, Zhi-Chao

Publication type:

Article

Effect of InGaN Channel on Radio‐Frequency Performance in High‐Electron‐Mobility Transistors with an InAlGaN Barrier.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 14, p. 1, doi. 10.1002/pssa.202200024

By:

Chen, Ling;
Wang, Kai;
Shen, Pei;
Fang, Yi;
Liu, Yuqi;
Wang, Hong

Publication type:

Article

Optical absorption in lateral transition metal dichalcogenide quantum wells.

Published in:

European Physical Journal B: Condensed Matter, 2022, v. 95, n. 10, p. 1, doi. 10.1140/epjb/s10051-022-00423-9

By:

Aliakbarpour, A.;
Akhoundi Khezrabad, M. S.;
Shojaei, S.;
Hashemizadeh-Aghda, S. A.

Publication type:

Article

A Monolithically Integrated InGaN Nanowire/Si Tandem Photoanode Approaching the Ideal Bandgap Configuration of 1.75/1.13 eV.

Published in:

Advanced Energy Materials, 2017, v. 7, n. 2, p. n/a, doi. 10.1002/aenm.201600952

By:

Fan, Shizhao;
Shih, Ishiang;
Mi, Zetian

Publication type:

Article

Improved artificial photosynthesis with InGaN NCs/InGaN/GaN electrodes.

Published in:

Functional Materials Letters, 2025, v. 18, n. 4, p. 1, doi. 10.1142/S1793604725510324

By:

Di, Mingxia;
Zhang, Hui;
Gao, Nan;
Xie, Xinjian;
Bian, Lifeng;
Fang, Yulong;
Chen, Guifeng

Publication type:

Article

Electrical Properties of Rapidly Annealed Ir and Ir/Au Schottky Contacts on n-Type InGaN.

Published in:

Journal of Metallurgy, 2012, p. 1, doi. 10.1155/2012/531915

By:

Rajagopal Reddy, V.;
Prasanna Lakshmi, B.;
Padma, R.

Publication type:

Article

Anomalous dispersion via coherent field in an InGaN/GaN quantum dot nanostructure.

Published in:

Modern Physics Letters B, 2016, v. 30, n. 4, p. -1, doi. 10.1142/S0217984916500202

By:

Solookinejad, Ghahraman;
Panahi, Mohsen;
Sangachin, Elnaz Ahmadi;
Asadpour, Seyyed Hossein

Publication type:

Article

Controlling of group velocity via terahertz signal radiation in a defect medium doped by four-level InGaN/GaN quantum dot nanostructure.

Published in:

Modern Physics Letters B, 2015, v. 29, n. 20, p. -1, doi. 10.1142/S0217984915501043

By:

Jafarzadeh, Hossein;
Sangachin, Elnaz Ahmadi;
Asadpour, Seyyed Hossein

Publication type:

Article

Exploring an InGaN Micro-LED structure for optimum IQE operating on low current condition through simulation study.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2025, v. 39, n. 6, p. 1, doi. 10.1142/S0217979225400296

By:

Hung, Wen-Ching;
Chang, Sheng-Po;
Chang, Shoou-Jinn;
Kuo, Hao-Chung;
Chen, Jyh-Chen

Publication type:

Article

Vertical GaN/InGaN/GaN heterostructure tunnel field-effect transistor: DC and analog/RF performance.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2023, v. 37, n. 16, p. 1, doi. 10.1142/S0217979223501576

By:

Singh, Sangeeta;
Kumari, Pallavi

Publication type:

Article

The study of temperature effect on the performance characteristics of the InGaN-based vertical cavity surface emitting laser (VCSEL) by solving the rate equations.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2016, v. 30, n. 22, p. -1, doi. 10.1142/S0217979216501502

By:

Goharrizi, A. Zandi;
Alahyarizadeh, Gh.

Publication type:

Article

Defect-selective-etched porous GaN as a buffer layer for high efficiency InGaN/GaN light-emitting diodes.

Published in:

PLoS ONE, 2022, v. 17, n. 11, p. 1, doi. 10.1371/journal.pone.0277667

By:

Park, Ah Hyun;
Baek, Seungjae;
Kim, Young Won;
Chandramohan, S.;
Suh, Eun-Kyung;
Seo, Tae Hoon

Publication type:

Article

Defect Research of InGaN Based on Blue LED Structures Using Reciprocal Space Mapping.

Published in:

Gazi University Journal of Science, 2015, v. 28, n. 3, p. 365

By:

BAŞ, Y.;
TAMER, M.;
GÜLTEKİN, A.;
ÖZTÜRK, M. K.;
ALTUNTAS, H.;
ÖZÇELIK, S.;
ÖZBAY, E.

Publication type:

Article

Device-Quality InGaN Templates With In Content Greater Than 10%: A Potential Solution for Red LED Problems.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 5, p. 3397, doi. 10.1007/s11664-025-11853-3

By:

Routh, Evyn L.;
Abdelhamid, Mostafa;
Bedair, Salah M.

Publication type:

Article

Comparative Study of AlGaN/InGaN/β-Ga2O3 and InAlN/InGaN/β-Ga2O3 HEMTs for Enhanced RF Linearity.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 3, p. 2340, doi. 10.1007/s11664-024-11664-y

By:

Murugapandiyan, P.;
Revathy, A.;
Ramkumar, N.;
Kumar, R. Saravana;
Mohanbabu, A.

Publication type:

Article

N-Face Semi-Bulk Absorber Boosts Conversion Efficiency of InGaN Solar Cell.

Published in:

Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7566, doi. 10.1007/s11664-023-10662-w

By:

Belghouthi, Rabeb;
Rached, Amani;
Aillerie, Michel;
Mohammed, Ramdani;
Gujrati, Rajat;
Salvestrini, Jean-Paul

Publication type:

Article

Analysis of InGaN Back-Barrier on Linearity and RF Performance in a Graded-Channel HEMT.

Published in:

Journal of Electronic Materials, 2023, v. 52, n. 2, p. 1426, doi. 10.1007/s11664-022-10109-8

By:

Geng, Lixin;
Zhao, Hongdong;
Yu, Kuaikuai;
Ren, Xinglin;
Yang, Dongxu;
Song, Yiheng

Publication type:

Article

Effects of Al Preflow on the Uniformity of an AlN Nucleation Layer and GaN Grown on Si (111) Substrate.

Published in:

Journal of Electronic Materials, 2022, v. 51, n. 6, p. 3342, doi. 10.1007/s11664-022-09560-4

By:

Ma, Jinbang;
Zhang, Yachao;
Yao, Yixin;
Zhang, Tao;
Li, Yifan;
Feng, Qian;
Bi, Zhen;
Zhang, Jincheng;
Hao, Yue

Publication type:

Article

Observation of Whispering Gallery Modes in InGaN/GaN Multi-Quantum Well Microdisks with Ag Plasmonic Nanoparticles on Si Pedestals.

Published in:

Journal of Electronic Materials, 2022, v. 51, n. 5, p. 2054, doi. 10.1007/s11664-022-09464-3

By:

Lee, Kang Jea;
Dinh, Duc Anh;
Hoa, Huynh Tran My;
Phuong, Pham Hoai;
Nguyen, Hoang Hung;
Hui, Kwan San;
Hui, Kwun Nam;
Cuong, Tran Viet

Publication type:

Article

High Radiative Recombination Rate of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with AlInGaN/AlInN/AlInGaN Tunnel Electron Blocking Layer.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 10, p. 5612, doi. 10.1007/s11664-021-09086-1

By:

Jamil, Tariq;
Usman, Muhammad;
Jamal, Habibullah;
Khan, Sibghatullah;
Rasheed, Saad;
Ali, Shazma

Publication type:

Article

Reversible Thermochromism and Strong Ferromagnetism in Two‐Dimensional Hybrid Perovskites.

Published in:

Angewandte Chemie, 2020, v. 132, n. 1, p. 209, doi. 10.1002/ange.201910701

By:

Sun, Bing;
Liu, Xiao‐Fei;
Li, Xiang‐Yang;
Cao, Yang;
Yan, Ze;
Fu, Lin;
Tang, Nujiang;
Wang, Qiang;
Shao, Xiangfeng;
Yang, Dezheng;
Zhang, Hao‐Li

Publication type:

Article

Simulation of doping levels and deep levels in InGaN-based single-junction solar cell.

Published in:

Journal of Materials Science, 2012, v. 47, n. 11, p. 4595, doi. 10.1007/s10853-012-6321-6

By:

Lin, Shuo;
Zeng, Shengwei;
Cai, Xiaomei;
Zhang, Jiangyong;
Wu, Shaoxiong;
Sun, Li;
Zhang, Baoping

Publication type:

Article

Fluorescence microscope light source stability.

Published in:

Histochemistry & Cell Biology, 2019, v. 151, n. 4, p. 357, doi. 10.1007/s00418-019-01776-6

By:

Mubaid, Firas;
Kaufman, Daniel;
Wee, Tse-Luen;
Nguyen-Huu, Dong-Son;
Young, David;
Anghelopoulou, Maria;
Brown, Claire M.

Publication type:

Article

Growth and Properties of Intentionally Carbon‐Doped GaN Layers.

Published in:

Crystal Research & Technology, 2020, v. 55, n. 2, p. N.PAG, doi. 10.1002/crat.201900129

By:

Richter, Eberhard;
Beyer, Franziska C.;
Zimmermann, Friederike;
Gärtner, Günter;
Irmscher, Klaus;
Gamov, Ivan;
Heitmann, Johannes;
Weyers, Markus;
Tränkle, Günther

Publication type:

Article

Nano-indentation study of dislocation evolution in GaN-based laser diodes.

Published in:

Discover Nano, 2024, v. 19, n. 1, p. 1, doi. 10.1186/s11671-024-03983-0

By:

Chen, Jingjing;
Su, Xujun;
Wang, Guobing;
Niu, Mutong;
Li, Xinran;
Xu, Ke

Publication type:

Article