Works matching DE "INDIUM gallium nitride"

Results: 523

Scalable Nanowire Photonic Crystals: Molding the Light Emission of InGaN.

Published in:

Advanced Functional Materials, 2017, v. 27, n. 38, p. n/a, doi. 10.1002/adfm.201702364

By:

Ra, Yong‐Ho;
Rashid, Roksana Tonny;
Liu, Xianhe;
Lee, Jaesoong;
Mi, Zetian

Publication type:

Article

Eu3+-activated Ln2TeO6 (Ln = La, Y) as a novel red-emitting phosphor for warm white LEDs.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 24, p. 22945, doi. 10.1007/s10854-020-04821-6

By:

Xiong, F. B.;
Xu, F. X.;
Meng, X. G.;
Ma, E.;
Zhu, W. Z.

Publication type:

Article

Performance enhancement by different sidewall structures for InGaN-based light-emitting diodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3645, doi. 10.1007/s10854-014-2069-x

By:

Wang, Min-Shuai;
Huang, Xiao-Jing;
Yang, Lan

Publication type:

Article

Indium rich InGaN solar cells grown by MOCVD.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3652, doi. 10.1007/s10854-014-2070-4

By:

Çakmak, H.;
Arslan, Engin;
Rudziński, M.;
Demirel, P.;
Unalan, H.;
Strupiński, W.;
Turan, R.;
Öztürk, M.;
Özbay, E.

Publication type:

Article

The formation of quantum dot structures in 30-pair InGaN/GaN multiple quantum wells after proper thermal annealing treatment.

Published in:

Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 10, p. 1830, doi. 10.1007/s10854-012-0670-4

By:

Lin, Yen-Sheng;
Kuo, Ho-Hung;
Feng, Shih-Wei

Publication type:

Article

Luminescence Control of Led Heterostructures Grown by Method of Metalorganic Vapor Phase Epitaxy on Sapphire.

Published in:

Russian Physics Journal, 2023, v. 65, n. 11, p. 1875, doi. 10.1007/s11182-023-02845-z

By:

Li, Zixuan;
Oleshko, V. I.;
Vorobjeva, L. V.

Publication type:

Article

Quantum dot activated indium gallium nitride on silicon as photoanode for solar hydrogen generation.

Published in:

Communications Chemistry, 2019, v. 2, n. 1, p. N.PAG, doi. 10.1038/s42004-018-0105-0

By:

Kumar, Praveen;
Devi, Pooja;
Jain, Rishabh;
Shivaprasad, S. M.;
Sinha, R. K.;
Zhou, Guofu;
Nötzel, Richard

Publication type:

Article

Saga of efficiency degradation at high injection in InGaN light emitting diodes.

Published in:

Turkish Journal of Physics, 2014, v. 38, n. 3, p. 269, doi. 10.3906/fiz-1407-23

By:

AVRUTIN, Vitaliy;
HAFIZ, Shopan A.;
Fan ZHANG;
ÖZGÜR, Ümit;
BELLOTTI, Enrico;
BERTAZZI, Francesco;
GOANO, Michele;
MATULIONIS, Arvydas;
ROBERTS, Adam T.;
EVERITT, Henry O.;
MORKOÇ, Hadis

Publication type:

Article

Quantum-Well-Embedded InGaN Quantum Dot Vertical-Cavity Surface-Emitting Laser and Its Photoelectric Performance.

Published in:

Photonics, 2025, v. 12, n. 3, p. 276, doi. 10.3390/photonics12030276

By:

Hua, Zinan;
Dong, Hailiang;
Jia, Zhigang;
Jia, Wei;
Shang, Lin;
Xu, Bingshe

Publication type:

Article

Structure Design of UVA VCSEL for High Wall Plug Efficiency and Low Threshold Current.

Published in:

Photonics, 2024, v. 11, n. 11, p. 1012, doi. 10.3390/photonics11111012

By:

An, Bing;
Wang, Yukun;
Wang, Yachao;
Zou, Zhijie;
Mei, Yang;
Long, Hao;
Zheng, Zhiwei;
Zhang, Baoping

Publication type:

Article

Investigation of InGaN-Based Green Micro-Photonic-Crystal- Light-Emitting-Diodes with Bottom, Nanoporous, Distributed Bragg Reflectors.

Published in:

Photonics, 2022, v. 9, n. 12, p. 939, doi. 10.3390/photonics9120939

By:

Hong, Kuo-Bin;
Huang, Wei-Ta;
Hsu, Wen-Cheng;
Tu, Chang-Ching;
Kuo, Hao-Chung

Publication type:

Article

Enhancement in Structural and Electroluminescence Properties of Green Light Emission for Semipolar (11–22) InGaN/GaN Based Grown on m-Plane Sapphire via Low Temperature Ammonia Treatment (LTAT).

Published in:

Photonics, 2022, v. 9, n. 9, p. N.PAG, doi. 10.3390/photonics9090646

By:

Tan, Gary;
Shuhaimi, Ahmad;
Norhaniza, Rizuan;
Zahir, Norhilmi;
Low, Yan Jie;
Wong, Yew Hoong;
Majid, Wan Haliza Abd

Publication type:

Article

Development of Micron Sized Photonic Devices Based on Deep GaN Etching.

Published in:

Photonics, 2021, v. 8, n. 3, p. 68, doi. 10.3390/photonics8030068

By:

Dogheche, Karim;
Alshehri, Bandar;
Patriache, Galles;
Dogheche, Elhadj

Publication type:

Article

Synthesis of Nanostructure InxGa1−xN Bulk Alloys and Thin Films for LED Devices.

Published in:

Photonics, 2019, v. 6, n. 2, p. 44, doi. 10.3390/photonics6020044

By:

B. Kashyout, Abd El-Hady;
Fathy, Marwa;
Gad, Sara;
Badr, Yehia;
A. Bishara, Ahmed

Publication type:

Article

The influence of the quantum-confined Stark effect on InGaN/AlGaN quantum dots.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 5, p. n/a, doi. 10.1002/pssb.201600325

By:

Zakizade, E.;
Figge, S.;
Laurus, C.;
Mehrtens, T.;
Rosenauer, A.;
Hommel, D.;
Gutowski, J.;
Sebald, K.

Publication type:

Article

Atomistic analysis of the electronic structure of m-plane InGaN/GaN quantum wells: Carrier localization effects in ground and excited states due to random alloy fluctuations.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 5, p. 853, doi. 10.1002/pssb.201552642

By:

Tanner, Daniel P.;
Caro, Miguel A.;
O'Reilly, Eoin P.;
Schulz, Stefan

Publication type:

Article

Structure and composition of non-polar (11-20) InGaN nanorings grown by modified droplet epitaxy.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 5, p. 840, doi. 10.1002/pssb.201552633

By:

Springbett, Helen;
Griffiths, James;
Ren, Christopher;
O'Hanlon, Tom;
Barnard, Jonathan;
Sahonta, Suman‐Lata;
Zhu, Tongtong;
Oliver, Rachel

Publication type:

Article

Plasma-assisted molecular beam epitaxy growth diagram of InGaN on (0001)GaN for the optimized synthesis of InGaN compositional grades.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 4, p. 626, doi. 10.1002/pssb.201552550

By:

Hestroffer, Karine;
Lund, Cory;
Li, Haoran;
Keller, Stacia;
Speck, James S.;
Mishra, Umesh K.

Publication type:

Article

Plasma-assisted molecular beam epitaxy growth diagram of InGaN on (0001)GaN for the optimized synthesis of InGaN compositional grades (Phys. Status Solidi B 4/2016).

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 4, p. 792, doi. 10.1002/pssb.201670525

By:

Hestroffer, Karine;
Lund, Cory;
Li, Haoran;
Keller, Stacia;
Speck, James S.;
Mishra, Umesh K.

Publication type:

Article

Photoluminescence of InGaN/GaN quantum wells grown on c-plane substrates with locally variable miscut.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 2, p. 284, doi. 10.1002/pssb.201552244

By:

Dróżdż, Piotr A.;
Korona, Krzysztof P.;
Sarzyński, Marcin;
Suski, Tadeusz;
Czernecki, Robert;
Wasik, Dariusz

Publication type:

Article

InGaN/AlGaN stress compensated superlattices coherently grown on semipolar (.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 1, p. 78, doi. 10.1002/pssb.201552336

By:

Nishinaka, Junichi;
Funato, Mitsuru;
Kido, Ryohei;
Kawakami, Yoichi

Publication type:

Article

Investigation of N-polar InGaN growth on misoriented ScAlMgO<sub>4</sub> substrates.

Published in:

Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-46542-w

By:

Najmi, Mohammed A.;
Kirilenko, Pavel;
Iida, Daisuke;
Ohkawa, Kazuhiro

Publication type:

Article

Performance analysis of gallium nitride-based DH-HEMT with polarization-graded AlGaN back-barrier layer.

Published in:

Applied Physics B: Lasers & Optics, 2023, v. 129, n. 6, p. 1, doi. 10.1007/s00340-023-08042-7

By:

Kalita, Sanjib;
Awadhiya, Bhaskar;
Changmai, Papul

Publication type:

Article

Correction to: Green Vertical-Cavity Surface-Emitting Lasers Based on InGaN Quantum Dots and Short Cavity.

Published in:

2023

By:

Yang, Tao;
Chen, Yan-Hui;
Wang, Ya-Chao;
Ou, Wei;
Ying, Lei-Ying;
Mei, Yang;
Tian, Ai-Qin;
Liu, Jian-Ping;
Kuo, Hao-Chung;
Zhang, Bao-Ping

Publication type:

Correction Notice

Green Vertical-Cavity Surface-Emitting Lasers Based on InGaN Quantum Dots and Short Cavity.

Published in:

Nano-Micro Letters, 2023, v. 15, n. 1, p. 1, doi. 10.1007/s40820-023-01189-0

By:

Yang, Tao;
Chen, Yan-Hui;
Wang, Ya-Chao;
Ou, Wei;
Ying, Lei-Ying;
Mei, Yang;
Tian, Ai-Qin;
Liu, Jian-Ping;
Guo, Hao-Chung;
Zhang, Bao-Ping

Publication type:

Article

Effects of ultraviolet-assisted electrochemical etching current densities on structural and optical characteristics of porous quaternary AlInGaN alloys.

Published in:

Arabian Journal of Chemistry, 2019, v. 12, n. 8, p. 3417, doi. 10.1016/j.arabjc.2015.10.003

By:

Quah, Hock Jin;
Lim, Way Foong;
Hassan, Zainuriah;
Radzali, Rosfariza;
Zainal, Norzaini;
Yam, Fong Kwong

Publication type:

Article

Spatially Resolved Cathodoluminescence in the Vicinity of Defects in the High-Efficiency InGaN/GaN Blue Light Emitting Diodes.

Published in:

Advances in Condensed Matter Physics, 2014, p. 1, doi. 10.1155/2014/671210

By:

Manh-Ha Doan;
Jaejin Lee

Publication type:

Article

High-Temperature Electroluminescence of InGaN/GaN Light-Emitting Devices with Multiple Quantum Barriers.

Published in:

Advances in Condensed Matter Physics, 2012, p. 1, doi. 10.1155/2012/145689

By:

Ya-Fen Wu

Publication type:

Article

Asymmetric skew X-ray diffraction at fixed incidence angle: application to semiconductor nano-objects.

Published in:

Journal of Applied Crystallography, 2016, v. 49, n. 3, p. 961, doi. 10.1107/S1600576716006385

By:

Grigoriev, D.;
Lazarev, S.;
Schroth, P.;
Minkevich, A.A.;
Köhl, M.;
Slobodskyy, T.;
Helfrich, M.;
Schaadt, D.M.;
Aschenbrenner, T.;
Hommel, D.;
Baumbach, T.

Publication type:

Article

Experimental of ultra-high-power multichip COB LED: Thermal dissipation mode using a cycle approach of refrigeration.

Published in:

Journal of Thermal Analysis & Calorimetry, 2019, v. 136, n. 5, p. 2097, doi. 10.1007/s10973-018-7806-6

By:

Hsu, Chih-Neng;
Wang, Wei-Chuan;
Fang, Shih-Hao

Publication type:

Article

Effect of the Density of Surface V-Defects on Laser Properties of InGaN/GaN Heterostructures with Multiple Quantum Wells Grown on Silicon Substrates.

Published in:

Journal of Applied Spectroscopy, 2022, v. 88, n. 6, p. 1164, doi. 10.1007/s10812-022-01294-9

By:

Danilchyk, A. V.;
Nagornyi, A. V.;
Rzheutskyi, N. V.;
Voinilovich, A. G.;
Pavlovskyi, V. N.;
Lutsenko, E. V.

Publication type:

Article

Micro-Raman characterization of InGaN/GaN single quantum well nanocolumns on Si(111) substrate.

Published in:

Journal of Applied Spectroscopy, 2013, v. 80, n. 4, p. 565, doi. 10.1007/s10812-013-9806-4

By:

Sangeetha, P.;
Sasirekha, V.;
Vadivelu, R.;
Kishino, K.;
Ramakrishnan, V.

Publication type:

Article

Relationship of quantum-well potential profile and luminescence of InGaN/GaN heterostructures.

Published in:

Journal of Applied Spectroscopy, 2013, v. 80, n. 2, p. 220, doi. 10.1007/s10812-013-9749-9

By:

Lutsenko, E.;
Rzheutski, M.;
Pavlovskii, V.;
Yablonskii, G.;
Reklaitis, I.;
Kadys, A.;
Žukauskas, A.

Publication type:

Article

Microplasma breakdown of InGaN/GaN heterostructures in high-power light-emitting diodes.

Published in:

Journal of Applied Spectroscopy, 2013, v. 80, n. 1, p. 117, doi. 10.1007/s10812-013-9730-7

By:

Veleschuk, V.;
Vlasenko, A.;
Kisselyuk, M.;
Lyashenko, O.

Publication type:

Article

Growth and Properties of Intentionally Carbon‐Doped GaN Layers.

Published in:

Crystal Research & Technology, 2020, v. 55, n. 2, p. N.PAG, doi. 10.1002/crat.201900129

By:

Richter, Eberhard;
Beyer, Franziska C.;
Zimmermann, Friederike;
Gärtner, Günter;
Irmscher, Klaus;
Gamov, Ivan;
Heitmann, Johannes;
Weyers, Markus;
Tränkle, Günther

Publication type:

Article

High-power-density InAlGaN/GaN HEMT using InGaN back barrier for W-band amplifiers.

Published in:

Electronics Letters (Wiley-Blackwell), 2023, v. 59, n. 4, p. 1, doi. 10.1049/ell2.12715

By:

Junji Kotani;
Kozo Makiyama;
Toshihiro Ohki;
Shiro Ozaki;
Naoya Okamoto;
Yuichi Minoura;
Masaru Sato;
Norikazu Nakamura;
Yasuyuki Miyamoto

Publication type:

Article

扫描透射电镜分析纳米材料的固态稀释效应.

Published in:

Electronic Components & Materials, 2018, v. 37, n. 7, p. 88, doi. 10.14106/j.cnki.1001-2028.2018.07.017

By:

蔡宗强;
鲍忠兴;
金光祖

Publication type:

Article

Simulation and Analysis of n-Type Electron Blocking Layers in GaN-Based Light-Emitting Diodes.

Published in:

Mathematical Modelling of Engineering Problems, 2024, v. 11, n. 11, p. 2912, doi. 10.18280/mmep.111104

By:

Tani, Wassila Kazi;
Khedim, Siham;
Amara, Sofiane

Publication type:

Article

Micro-LED 器件：从极性 c 面到非极性或半极性的发展趋势.

Published in:

Chinese Journal of Liquid Crystal & Displays, 2023, v. 38, n. 10, p. 1347, doi. 10.37188/CJLCD.2023-0205

By:

王麒;
杨波波;
李威晨;
邹军;
杨雪舟;
徐华;
钱麒;
陈俊锋;
李杨

Publication type:

Article

Bandgap and refractive index estimates of InAlN and related nitrides across their full composition ranges.

Published in:

Scientific Reports, 2020, v. 10, n. 1, p. N.PAG, doi. 10.1038/s41598-020-73160-7

By:

Alam, Shahab N.;
Zubialevich, Vitaly Z.;
Ghafary, Bijan;
Parbrook, Peter J.

Publication type:

Article

An Approach Toward Broader Emission Bands in Semipolar InGaN Quantum Wells on Convex Lens‐Shaped GaN Microstructures via Lower‐Temperature Growth.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400110

By:

Fukushige, Shogo;
Matsuda, Yoshinobu;
Funato, Mitsuru;
Kawakami, Yoichi

Publication type:

Article

Elimination of V‐Shaped Pits in Thick InGaN Layers via Ammonia‐Assisted Face‐to‐Face Annealing.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400052

By:

Nakata, Atsuto;
Sasaki, Ayano;
Kurai, Satoshi;
Okada, Narihito;
Yamada, Yoichi

Publication type:

Article

High‐Performance and Temperature‐Stable InGaN Single‐Quantum‐Well Red Light‐Emitting Diodes via Selective Hydrogen Passivation.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400048

By:

Altinkaya, Cesur;
Kirilenko, Pavel;
Iida, Daisuke;
Ohkawa, Kazuhiro

Publication type:

Article

High Efficiency of 5 μm‐Diameter Blue Micro‐Light‐Emitting Diodes.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400027

By:

Deng, Chuhan;
Chen, Zhizhong;
Dong, Boyan;
Pan, Zuojian;
Zhang, Haodong;
Chen, Yian;
Li, Yuchen;
Wang, Daqi;
Hu, Ling;
Chen, Weihua;
Jiao, Fei;
Kang, Xiangning;
Yuan, Lin;
Zhu, Jianfeng;
Xia, Chenhui;
Wang, Qi;
Zhang, Guoyi;
Shen, Bo

Publication type:

Article

High‐Speed GaN‐Based 405 nm Violet Superluminescent Diode with Tilted Facet for Visible Light Communications.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 13, p. 1, doi. 10.1002/pssa.202300670

By:

Dong, Mengxi;
Yi, Shulan;
Wang, Junfei;
Ma, Chicheng;
Li, Dong;
Wang, Shanshan;
Hou, Yuqi;
Li, Ziwei;
Zhang, Junwen;
Shi, Jianyang;
Chi, Nan;
Shen, Chao

Publication type:

Article

Asymmetric Gate and SiC Substrate Grooved InGaN Back‐Barrier AlGaN/GaN HEMTs for High‐Power RF Applications.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 5, p. 1, doi. 10.1002/pssa.202300708

By:

Parvez, Bazila;
Sahu, Jyoti;
Basak, Subhajit;
Patil, Mahalaxmi;
Sahu, Arpit;
Garg, Gaurav;
Ganguly, Swaroop;
Saha, Dipankar

Publication type:

Article

Emission Mechanism of Light‐Emitting Diode Structures with Red, Green, and Blue Active Layers Separated by Si‐Doped Interlayers.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 18, p. 1, doi. 10.1002/pssa.202300181

By:

Okuno, Koji;
Goshonoo, Koichi;
Ohya, Masaki

Publication type:

Article

Characterization of Lateral and Longitudinal Mode Competition in Blue InGaN Broad‐Ridge Laser Diodes.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200751

By:

Uhlig, Lukas;
Kunzmann, Dominic J.;
Schwarz, Ulrich T.

Publication type:

Article

Bright Emission at Reverse Bias After Trailing Edge of Driving Pulse in Wide InGaN Quantum Wells.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202300042

By:

Tepaß, Jannina;
Uhlig, Lukas;
Hajdel, Mateusz;
Muziol, Grzegorz;
Schwarz, Ulrich T.

Publication type:

Article

Characterization of Lateral and Longitudinal Mode Competition in Blue InGaN Broad‐Ridge Laser Diodes.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200751

By:

Uhlig, Lukas;
Kunzmann, Dominic J.;
Schwarz, Ulrich T.

Publication type:

Article