Works matching DE "INDIUM gallium nitride"
Results: 516
Reversible Thermochromism and Strong Ferromagnetism in Two‐Dimensional Hybrid Perovskites.
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- Angewandte Chemie, 2020, v. 132, n. 1, p. 209, doi. 10.1002/ange.201910701
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Simulation of doping levels and deep levels in InGaN-based single-junction solar cell.
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- Journal of Materials Science, 2012, v. 47, n. 11, p. 4595, doi. 10.1007/s10853-012-6321-6
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Fluorescence microscope light source stability.
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- Histochemistry & Cell Biology, 2019, v. 151, n. 4, p. 357, doi. 10.1007/s00418-019-01776-6
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InGaN blue resonant cavity micro-LED with RGY quantum dot layer for broad gamut, efficient displays.
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- Discover Nano, 2024, v. 19, n. 1, p. 1, doi. 10.1186/s11671-024-04018-4
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Nano-indentation study of dislocation evolution in GaN-based laser diodes.
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- Discover Nano, 2024, v. 19, n. 1, p. 1, doi. 10.1186/s11671-024-03983-0
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Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications.
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- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03871-z
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Structural and optical analyses for InGaN-based red micro-LED.
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- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03853-1
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Droplet epitaxy of InGaN quantum dots on Si (111) by plasma-assisted molecular beam epitaxy.
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- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03844-2
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Correlative analysis on InGaN/GaN nanowires: structural and optical properties of self-assembled short-period superlattices.
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- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03808-6
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Quantum dot activated indium gallium nitride on silicon as photoanode for solar hydrogen generation.
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- Communications Chemistry, 2019, v. 2, n. 1, p. N.PAG, doi. 10.1038/s42004-018-0105-0
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Quantum Efficiency Improvement of InGaN Near Ultraviolet LED Design by Genetic Algorithm.
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- Sakarya University Journal of Science (SAUJS) / Sakarya Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 2023, v. 27, n. 1, p. 94, doi. 10.16984/saufenbilder.1051252
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Investigation on Applying an InGaN Photocathode with Negative Electron Affinity for Electric Propulsion.
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- Transactions of the Japan Society of Aeronautical & Space Science, 2023, v. 66, n. 1, p. 10, doi. 10.2322/tjsass.66.10
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A scattered volume emitter micropixel architecture for ultra efficient light extraction from DUV LEDs.
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- Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-64689-y
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Effect of Intrinsic Layer Thickness on PIN Structure for Tandem Solar Cell Based on Indium Gallium Nitride Using AMPS -1D.
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- Journal of Nano- & Electronic Physics, 2018, v. 10, n. 4, p. 1, doi. 10.21272/jnep.10(4).04013
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Model of Band Diagram LED White Light in the System of GaN/InGaN.
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- Journal of Nano- & Electronic Physics, 2015, v. 7, n. 4, p. 04069-1
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Efficient laser operation of diode-pumped Pr,Mg:SrAlO.
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- Applied Physics B: Lasers & Optics, 2014, v. 116, n. 1, p. 109, doi. 10.1007/s00340-013-5655-3
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Luminescence and Crystalline Properties of InGaN-based LED on Si Substrate with AlN/GaN Superlattice Structure.
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- Journal of Physical Science, 2021, v. 32, n. 3, p. 1, doi. 10.21315/jps2021.32.3.1
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Simulation Study of GaN/Al<sub>1-x</sub>Ga<sub>x</sub>N Quantum Well (QW) Operating in the UV Region.
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- Journal of Physical Science, 2019, v. 30, n. 1, p. 25, doi. 10.21315/jps2019.30.1.3
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Comparing Optical Properties of GaN/InGaN Based LEDs Using Different MQWs and SO<sub>2</sub> Nano Lenses.
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- International Journal of Microwave & Optical Technology, 2022, v. 17, n. 3, p. 296
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Electrical Properties of Rapidly Annealed Ir and Ir/Au Schottky Contacts on n-Type InGaN.
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- Journal of Metallurgy, 2012, p. 1, doi. 10.1155/2012/531915
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HAFNIUM AND NITROGEN INTERACTION AT Hf/GaN(0001) INTERFACE.
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- Surface Review & Letters, 2020, v. 27, n. 11, p. N.PAG, doi. 10.1142/S0218625X20500134
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Local structure around In atoms in coherently grown m-plane InGaN film.
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- Journal of Synchrotron Radiation, 2017, v. 24, n. 5, p. 1012, doi. 10.1107/S1600577517010669
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Defect Research of InGaN Based on Blue LED Structures Using Reciprocal Space Mapping.
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- Gazi University Journal of Science, 2015, v. 28, n. 3, p. 365
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Green Syngas Production from Natural Lignin, Sunlight, and Water over Pt‐Decorated InGaN Nanowires.
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- Angewandte Chemie, 2024, v. 136, n. 39, p. 1, doi. 10.1002/ange.202405904
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The Confinement Profile Effect on the Optical Properties in Different Inverse-shaped Single InGaN/GaN Quantum Wells.
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- Iraqi Journal of Physics, 2022, v. 20, n. 1, p. 1, doi. 10.30723/ijp.v20i1.965
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Electric dipole of InN/InGaN quantum dots and holes and giant surface photovoltage directly measured by Kelvin probe force microscopy.
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- Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-62820-3
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High-performance flat-type InGaN-based light-emitting diodes with local breakdown conductive channel.
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- Scientific Reports, 2019, v. 9, n. 1, p. N.PAG, doi. 10.1038/s41598-019-49727-4
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Properties of the Original Electron-Irradiated LEDs Homojunction GaP, GaAsP and Heterojunction InGaN Structures.
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- Journal of Nano- & Electronic Physics, 2024, v. 16, n. 2, p. 1, doi. 10.21272/jnep.16(2).02030
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Experimental Validation of Fuel Cell Powered Energy Efficient Gallium Nitride Multilevel Inverter for Industrial Applications.
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- Journal of New Materials for Electrochemical Systems, 2021, v. 24, n. 3, p. 159, doi. 10.14447/jnmes.v24i3.a03
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Degradation of InGaN/GaN LEDs under Forward-bias Operations in Salty Water Vapor.
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- Journal of New Materials for Electrochemical Systems, 2016, v. 19, n. 1, p. 7, doi. 10.14447/jnmes.v19i1.340
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Degradation of AlGaN/GaN Light Emitting Diodes caused by Carbon Contamination with Reverse-bias Stress Test in Water Vapor.
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- Journal of New Materials for Electrochemical Systems, 2016, v. 19, n. 1, p. 11, doi. 10.14447/jnmes.v19i1.341
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Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes.
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- Nanoscale Research Letters, 2015, v. 10, n. 1, p. 1, doi. 10.1186/s11671-015-1143-5
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Influence of patterned sapphire substrates with different symmetry on the light output power of InGaN-based LEDs.
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- Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-596
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Numerical simulations of the current-matching effect and operation mechanisms on the performance of InGaN/Si tandem cells.
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- Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-652
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Fabrication of vertical GaN/InGaN heterostructure nanowires using Ni-Au bi-metal catalysts.
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- Nanoscale Research Letters, 2013, n. 6, p. 1, doi. 10.1186/1556-276X-8-299
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Blue light emission from the heterostructured ZnO/InGaN/GaN.
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- Nanoscale Research Letters, 2013, v. 8, n. 2, p. 1, doi. 10.1186/1556-276X-8-99
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Design of Multijunction Photovoltaic Cells Optimized for Varied Atmospheric Conditions.
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- International Journal of Photoenergy, 2014, p. 1, doi. 10.1155/2014/514962
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Effect of Trapezoidal-Shaped Well on Efficiency Droop in InGaN-Based Double-Heterostructure Light-Emitting Diodes.
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- International Journal of Photoenergy, 2012, p. 1, doi. 10.1155/2012/917159
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Performance enhancement of InGaN based near ultraviolet LEDs with asymmetric staggered quantum wells.
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- Optical & Quantum Electronics, 2024, v. 56, n. 2, p. 1, doi. 10.1007/s11082-023-05714-8
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Electronic band structure pseudopotential calculation of InGaN/GaN quantum wells.
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- Optical & Quantum Electronics, 2023, v. 55, n. 1, p. 1, doi. 10.1007/s11082-022-04244-z
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Designing of type-I AlN/GaN/InAlN quantum well heterostructure and investigating its optical characteristics.
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- Optical & Quantum Electronics, 2022, v. 54, n. 12, p. 1, doi. 10.1007/s11082-022-04275-6
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Optimization of InGaN quantum-dot based light-emitting diodes by means of cellular automata algorithms.
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- Optical & Quantum Electronics, 2022, v. 54, n. 7, p. 1, doi. 10.1007/s11082-022-03807-4
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GaN-based bipolar cascade lasers with 25 nm wide quantum wells.
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- Optical & Quantum Electronics, 2022, v. 54, n. 1, p. 1, doi. 10.1007/s11082-021-03455-0
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Multiplication width dependent avalanche characteristics in GaN/4H-SiC heterojunction avalanche photodiodes.
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- Optical & Quantum Electronics, 2021, v. 53, n. 10, p. 1, doi. 10.1007/s11082-021-03213-2
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扫描透射电镜分析纳米材料的固态稀释效应.
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- Electronic Components & Materials, 2018, v. 37, n. 7, p. 88, doi. 10.14106/j.cnki.1001-2028.2018.07.017
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High-efficiency indium gallium nitride/Si tandem photovoltaic solar cells modeling using indium gallium nitride semibulk material: monolithic integration versus 4-terminal tandem cells.
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- Progress in Photovoltaics, 2016, v. 24, n. 11, p. 1436, doi. 10.1002/pip.2807
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Enhancement of silicon solar cells by downshifting with Eu and Tb coordination complexes.
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- Progress in Photovoltaics, 2016, v. 24, n. 9, p. 1251, doi. 10.1002/pip.2785
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Optimization of the Synthesis and Energy Transfer of Ca 2 MgWO 6 :Cr 3+ ,Nd 3+.
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- Inorganics, 2021, v. 9, n. 4, p. 23, doi. 10.3390/inorganics9040023
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Scalable InGaN nanowire µ-LEDs: paving the way for next-generation display technology.
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- National Science Review, 2025, v. 12, n. 1, p. 1, doi. 10.1093/nsr/nwae306
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Investigation of N-polar InGaN growth on misoriented ScAlMgO<sub>4</sub> substrates.
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- Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-46542-w
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