Carrier trapping and escape times in p-i-n GaInNAs MQW structures.
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- Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-21
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- Article
Works matching DE "INDIUM gallium arsenide nitride"
Results: 3
1
2
Performance assessment of multijunction solar cells incorporating GaInNAsSb.
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- Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-61
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- Article
3
Hydrostatic Pressure Dependent Optoelectronic Properties of InGaAsN/GaAs Spherical Quantum Dots for Laser Diode Applications.
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- Physica Status Solidi (B), 2019, v. 256, n. 3, p. N.PAG, doi. 10.1002/pssb.201800395
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- Article