Works matching DE "INDIUM gallium arsenide"
Results: 545
Research of In0.48Ga0.52P/GaAs Heterojunction Interface Properties Improvement Deposited by MOCVD.
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- Crystal Research & Technology, 2025, v. 60, n. 3, p. 1, doi. 10.1002/crat.202400198
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Comparative Simulation of Thermal Noise Effects for Photodetectors on Performance of Long-Haul DWDM Optical Networks.
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- Journal of Optical Communications, 2024, v. 45, n. 1, p. s21, doi. 10.1515/joc-2019-0152
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Photodetectors of the Short-Wave IR Spectrum Range, Intended for Space Monitoring.
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- Journal of Communications Technology & Electronics, 2024, v. 69, n. 4, p. 173, doi. 10.1134/S1064226924700244
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Unraveling the Gain Mechanism in High Performance Solution-Processed PbS Infrared PIN Photodiodes.
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- Advanced Functional Materials, 2015, v. 25, n. 8, p. 1233, doi. 10.1002/adfm.201403673
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Facile Fabrication of PbS Nanocrystal:C<sub>60</sub> Fullerite Broadband Photodetectors with High Detectivity.
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- Advanced Functional Materials, 2013, v. 23, n. 33, p. 4149, doi. 10.1002/adfm.201202818
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Components distribution in Cu(In,Ga)Se films prepared by selenization of evaporated metallic precursors on bare and ITO-coated glass substrates.
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- Journal of Materials Science, 2012, v. 47, n. 4, p. 1836, doi. 10.1007/s10853-011-5970-1
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Enhanced gain saturation model of non-linear semiconductor optical amplifiers.
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- IET Optoelectronics (Wiley-Blackwell), 2018, v. 12, n. 6, p. 263, doi. 10.1049/iet-opt.2018.5029
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Erratum: Physical modelling and experimental characterisation of InAlAs/InGaAs avalanche photodiode for 10 Gb/s data rates and higher.
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- 2018
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- Correction Notice
Physical modelling and experimental characterisation of InAlAs/InGaAs avalanche photodiode for 10 Gb/s data rates and higher.
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- IET Optoelectronics (Wiley-Blackwell), 2018, v. 12, n. 1, p. 5, doi. 10.1049/iet-opt.2017.0068
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Luminescence coupling effects on multijunction solar cell external quantum efficiency measurement.
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- Progress in Photovoltaics, 2013, v. 21, n. 3, p. 344, doi. 10.1002/pip.1215
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InGaAs nBn SWIR detector design with lattice-matched InAlGaAs barrier.
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- Turkish Journal of Electrical Engineering & Computer Sciences, 2019, v. 27, n. 1, p. 1, doi. 10.3906/elk-1802-197
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From Salt to Electronics: Heteroepitaxy and GaAs Solar Cells.
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- Advanced Materials Interfaces, 2022, v. 9, n. 26, p. 1, doi. 10.1002/admi.202201148
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Comparative Study of the Two-Dimensional Plasma Excitations in the Heterostructures ZnO/MgZnO, AlAs/AlGaAs, and GaAs/AlGaAs.
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- Journal of Experimental & Theoretical Physics, 2020, v. 130, n. 4, p. 594, doi. 10.1134/S1063776120020053
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Advanced Processing Technologies for Innovative Materials.
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- Technologies (2227-7080), 2024, v. 12, n. 11, p. 227, doi. 10.3390/technologies12110227
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InGaAs-based Graded Gap Active Elements with Static Cathode Domain for Terahertz Range.
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- Journal of Nano- & Electronic Physics, 2019, v. 11, n. 1, p. 1, doi. 10.21272/jnep.11(1).01006
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Some Aspects of Phosphorus Diffusion in Germanium in In<sub>0,01</sub>Ga<sub>0,99</sub>As / In<sub>0,56</sub>Ga<sub>0,44</sub>P / Ge Heterostructures.
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- Journal of Nano- & Electronic Physics, 2013, v. 5, n. 4, p. 04021-1
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Characterization of InGaAs and InGaAsN semiconductor saturable absorber mirrors for high-power mode-locked thin-disk lasers.
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- Applied Physics B: Lasers & Optics, 2012, v. 106, n. 3, p. 605, doi. 10.1007/s00340-011-4697-7
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Epitaxy and characterization of InP/InGaAs tandem solar cells grown by MOVPE on InP and Si substrates.
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- EPJ Photovoltaics, 2023, v. 14, p. 1, doi. 10.1051/epjpv/2022027
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- Article
Interfacial X-ray photospectrometry study of In<sub>0.53</sub>Ga<sub>0.47</sub>As under different passivation treatments for metal oxide semiconductor field effect transistor devices.
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- Micro & Nano Letters (Wiley-Blackwell), 2013, v. 8, n. 11, p. 836, doi. 10.1049/mnl.2013.0560
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Determination of a High-Power THz Detector for EA-FEL Radiation Using Optical Sampling of GaAs and ZnTe Crystals.
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- Designs, 2022, v. 6, n. 6, p. 109, doi. 10.3390/designs6060109
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Scaling in the quantum Hall effect regime in n-InGaAs/GaAs nanostructures.
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- Journal of Experimental & Theoretical Physics, 2013, v. 117, n. 1, p. 144, doi. 10.1134/S1063776113080116
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Novel Features Extraction for Fault Detection Using Thermography Characteristics and IV Measurements of CIGS Thin-Film Module.
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- Instrumentation, Mesures, Métrologies, 2020, v. 19, n. 5, p. 311, doi. 10.18280/i2m.190501
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Design of pump pulses for InGaAs quantum well semiconductor disk lasers.
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- Optical Engineering, 2014, v. 53, n. 2, p. 1, doi. 10.1117/1.OE.53.2.026105
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- Article
Messung der Homogenität der Strahldichte einer Ulbricht-Kugel mit großer Apertur im SWIR mit einer InGaAs-Infrarotkamera.
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- Technisches Messen, 2022, v. 89, n. 1, p. 43, doi. 10.1515/teme-2021-0111
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Monolithic integration of visible GaAs and near-infrared InGaAs for multicolor photodetectors by using high-throughput epitaxial lift-off toward high-resolution imaging systems.
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- Scientific Reports, 2019, v. 9, n. 1, p. N.PAG, doi. 10.1038/s41598-019-55159-x
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InAs on GaAs Photodetectors Using Thin InAlAs Graded Buffers and Their Application to Exceeding Short-Wave Infrared Imaging at 300 K.
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- Scientific Reports, 2019, v. 9, n. 1, p. N.PAG, doi. 10.1038/s41598-019-49300-z
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Single-Crystalline InGaAs Nanowires for Room-Temperature High-Performance Near-Infrared Photodetectors.
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- Nano-Micro Letters, 2016, v. 8, n. 1, p. 29, doi. 10.1007/s40820-015-0058-0
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Ground-based FTIR O<sub>3</sub> retrievals from the 3040 cm<sup>-1</sup> spectral range at Xianghe, China.
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- Atmospheric Measurement Techniques Discussions, 2020, p. 1, doi. 10.5194/amt-2020-127
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Theoretical Study of High-Frequency Response of InGaAs/AlAs Double-Barrier Nanostructures.
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- Advances in Materials Science & Engineering, 2017, p. 1, doi. 10.1155/2017/2031631
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- Article
Plasmon modes in BLG-GaAs Double-Layer Structures: Temperature Effects.
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- Journal of Low Temperature Physics, 2021, v. 205, n. 1/2, p. 45, doi. 10.1007/s10909-021-02615-6
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Effect of Bound Polaron and Electromagnetic Field on Thermodynamic Properties of GaAs Quadratic Quantum Dot.
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- Journal of Low Temperature Physics, 2021, v. 203, n. 1/2, p. 112, doi. 10.1007/s10909-021-02576-w
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Solvable Model of the Thermal Persistent Current at Low Temperatures of Two-Electron Parabolic GaAs Quantum Dot.
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- Journal of Low Temperature Physics, 2020, v. 200, n. 1/2, p. 76, doi. 10.1007/s10909-020-02477-4
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Thermodynamic Properties of a GaAs Quantum Dot with an Effective-Parabolic Potential: Theory and Simulation.
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- Journal of Low Temperature Physics, 2019, v. 197, n. 1/2, p. 95, doi. 10.1007/s10909-019-02218-2
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Electron Mobilities and Effective Masses in InGaAs/InAlAs HEMT Structures with High In Content.
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- Journal of Low Temperature Physics, 2016, v. 185, n. 5/6, p. 701, doi. 10.1007/s10909-016-1589-6
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Strained GaAs/InGaAs Core-Shell Nanowires for Photovoltaic Applications.
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- Nanoscale Research Letters, 2016, v. 11, n. 1, p. 1, doi. 10.1186/s11671-016-1384-y
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Detailed Study of the Influence of InGaAs Matrix on the Strain Reduction in the InAs Dot-In-Well Structure.
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- Nanoscale Research Letters, 2016, v. 11, n. 1, p. 1, doi. 10.1186/s11671-016-1339-3
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Spin transport in undoped InGaAs/AlGaAs multiple quantum well studied via spin photocurrent excited by circularly polarized light.
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- Nanoscale Research Letters, 2016, v. 11, n. 1, p. 1, doi. 10.1186/s11671-015-1218-3
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Quantum dot cascade laser.
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- Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-144
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- Article
Spin photocurrent spectra induced by Rashba- and Dresselhaus-type circular photogalvanic effect at inter-band excitation in InGaAs/GaAs/AlGaAs step quantum wells.
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- Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-130
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Observation of anomalous linear photogalvanic effect and its dependence on wavelength in undoped InGaAs/AlGaAs multiple quantum well.
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- Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-493
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Observation and tunability of room temperature photoluminescence of GaAs/GaInAs core-multiple-quantum-well shell nanowire structure grown on Si (100) by molecular beam epitaxy.
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- Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-626
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InP HBT Technology: Advantages, Applications and Future Challenges.
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- Microwave Journal, 2023, v. 66, n. 6, p. 18
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Correction: Modelling the effects of p-modulation doping in InAs/InGaAs quantum dot devices.
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- 2024
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- Correction Notice
Modelling the effects of p-modulation doping in InAs/InGaAs quantum dot devices.
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- Optical & Quantum Electronics, 2024, v. 56, n. 4, p. 1, doi. 10.1007/s11082-024-06362-2
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- Article
Analyzing extended wavelength InGaAs photodetectors: the effects of window and active layer thickness on optical characteristics.
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- Optical & Quantum Electronics, 2024, v. 56, n. 4, p. 1, doi. 10.1007/s11082-024-06328-4
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Effect of quantum well thickness and temperature on electrical and optical characteristics of transistor laser using group-IV material.
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- Optical & Quantum Electronics, 2023, v. 55, n. 6, p. 1, doi. 10.1007/s11082-023-04720-0
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High-speed and low dark current InGaAs/InAlAs avalanche photodiodes with P-type absorption layers.
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- Optical & Quantum Electronics, 2023, v. 55, n. 5, p. 1, doi. 10.1007/s11082-023-04615-0
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Design and modeling of an efficient high-speed InGaAs/InP QW waveguide-photodetector.
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- Optical & Quantum Electronics, 2023, v. 55, n. 4, p. 1, doi. 10.1007/s11082-023-04619-w
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InGaAs based gratings for UV–VIS spectrometer in prospective mRNA vaccine research.
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- Optical & Quantum Electronics, 2022, v. 54, n. 9, p. 1, doi. 10.1007/s11082-022-04002-1
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- Article
Zn diffusion depth effect on photoresponse uniformity in InP/InGaAs avalanche photodiodes.
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- Optical & Quantum Electronics, 2022, v. 54, n. 9, p. 1, doi. 10.1007/s11082-022-03931-1
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- Article