Works matching DE "INDIUM gallium arsenide"

Results: 560

High-Speed and Broadband InGaAs/InP Photodiode with InGaAsP Graded Bandgap Layers.

Published in:

Sensors (14248220), 2025, v. 25, n. 9, p. 2841, doi. 10.3390/s25092841

By:

Yang, Guohao;
Liu, Tianhong;
Li, Jinping;
Chen, Baile;
Tong, Cunzhu

Publication type:

Article

Progress in Avalanche Photodiodes for Laser Ranging.

Published in:

Sensors (14248220), 2025, v. 25, n. 9, p. 2802, doi. 10.3390/s25092802

By:

Liu, Zhenxing;
An, Ning;
Han, Xingwei;
Nuñez, Natalia Edith;
Jin, Liang;
Liu, Chengzhi

Publication type:

Article

Unraveling the Gain Mechanism in High Performance Solution-Processed PbS Infrared PIN Photodiodes.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 8, p. 1233, doi. 10.1002/adfm.201403673

By:

Lee, Jae Woong;
Kim, Do Young;
So, Franky

Publication type:

Article

Facile Fabrication of PbS Nanocrystal:C<sub>60</sub> Fullerite Broadband Photodetectors with High Detectivity.

Published in:

Advanced Functional Materials, 2013, v. 23, n. 33, p. 4149, doi. 10.1002/adfm.201202818

By:

Saran, Rinku;
Nordin, Muhammad N.;
Curry, Richard J.

Publication type:

Article

Discrepancies in barrier heights obtained from current–voltage (IV) and capacitance–voltage (CV) of Au/PNoMPhPPy/n-GaAs structures in wide range of temperature.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 15, p. 12210, doi. 10.1007/s10854-022-08181-1

By:

Altındal, Şemsettin;
Özdemir, Ahmet Faruk;
Aydoğan, Şakir;
Türüt, Abdülmecit

Publication type:

Article

Effects of thermal annealing on the characterization of p-NiO/n-GaAs heterojunctions produced by thermal evaporation.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 10, p. 13462, doi. 10.1007/s10854-021-05924-4

By:

Özkartal, Abdullah;
Noori, Dheyab Thaer

Publication type:

Article

Development of a detector-based absolute spectral power responsivity scale in the spectral range of 300–1600 nm.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 4, p. 5215, doi. 10.1007/s10854-021-05253-6

By:

Karmalawi, Abdallah M.;
Abdelmageed, Alaaeldin A.

Publication type:

Article

MBE growth of InAs/GaAs quantum dots on sintered porous silicon substrates with high optical quality in the 1.3 μm band.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 6, p. 4605, doi. 10.1007/s10854-020-03012-7

By:

Aouassa, Mansour;
Franzò, Giorgia;
Assaf, Elie;
Sfaxi, Larbi;
M'Ghaieth, Ridha;
Maaref, Hassen

Publication type:

Article

Improved quality of InP layer on GaAs substrates by using compositionally modulated step-graded AlGaInAs buffers.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 17, p. 16251, doi. 10.1007/s10854-019-01994-7

By:

He, Yang;
Yan, Wei;
Sun, Yurun;
Dong, Jianrong

Publication type:

Article

InP/ZnS quantum dots functionalized AlGaAs/InGaAs open gate high electron mobility transistor.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 12, p. 10663, doi. 10.1007/s10854-018-9134-9

By:

Li, Zhimin;
Zhang, Dongyan

Publication type:

Article

Investigation of degradation characteristics of electron irradiated GaInP/InGaAs/Ge solar cell by numerical simulation model.

Published in:

International Journal of Energy Research, 2022, v. 46, n. 10, p. 14060, doi. 10.1002/er.8122

By:

Zhang, Weinan;
Aierken, Abuduwayiti;
Zhuang, Yu;
Wang, Bing;
Fang, Liang;
Zhang, Shuyi;
Zhang, Daoyong;
Yang, Xin;
Song, Qiaogang;
Wang, Tingbao

Publication type:

Article

Emission processes of the interaction between the quantum well and donor delta layer in heterostructures for pHEMTs.

Published in:

Turkish Journal of Physics, 2019, v. 43, n. 3, p. 243, doi. 10.3906/fiz-1812-12

By:

IVANOVA, Yana;
YAKOVLEV, George;
ZUBKOV, Vasily;
SOLOMNIKOVA, Anna

Publication type:

Article

Emission Linewidth and α-Factor of 1.55 μm-Range Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/InGaAlAs Quantum Wells.

Published in:

Optics & Spectroscopy, 2024, v. 132, n. 2, p. 111, doi. 10.1134/S0030400X2402005X

By:

Blokhin, S. A.;
Kovach, Ya. N.;
Bobrov, M. A.;
Blokhin, A. A.;
Maleev, N. A.;
Kuzmenkov, A. G.;
Babichev, A. V.;
Novikov, I. I.;
Karachinsky, L. Ya.;
Kolodeznyi, E. S.;
Voropaev, K. O.;
Kulikov, A. V.;
Egorov, A. Yu.;
Ustinov, V. M.

Publication type:

Article

Low-Dark-Current and Wide-Dynamic-Range InGaAs/InAlAs Avalanche Photodiodes with a Dual-Charge Layer.

Published in:

Photonics, 2025, v. 12, n. 4, p. 312, doi. 10.3390/photonics12040312

By:

Yang, Guohao;
Liu, Tianhong;
Li, Jinping;
Tong, Cunzhu

Publication type:

Article

Material Structure Design of High-Gain and Low-Noise Multi-Gain-Stage Avalanche Photodiode.

Published in:

Photonics, 2024, v. 11, n. 12, p. 1202, doi. 10.3390/photonics11121202

By:

Han, Lihong;
Du, Meiqin;
Guan, Xiaoning;
Sun, Tong;
Liu, Gang;
Lu, Pengfei

Publication type:

Article

The Impact of Afterpulsing Effects in Single-Photon Detectors on the Performance Metrics of Single-Photon Detection Systems.

Published in:

Photonics, 2024, v. 11, n. 11, p. 1074, doi. 10.3390/photonics11111074

By:

Lai, Yuanfan;
Shen, Zongyao;
Chen, Yong;
Wang, Jindong;
Guo, Jianping;
Wei, Zhengjun

Publication type:

Article

Correction: Hofstetter et al. Monolithically Integrated Michelson Interferometer Using an InGaAs/InAlAs Quantum Cascade Laser at λ = 4 µm. Photonics 2024, 11 , 593.

Published in:

2024

By:

Hofstetter, Daniel;
Beck, Hans;
Bour, David P.

Publication type:

Correction Notice

Design and Simulation of a High-Responsivity Dielectric Metasurface Si-Based InGaAs Photodetector.

Published in:

Photonics, 2024, v. 11, n. 10, p. 906, doi. 10.3390/photonics11100906

By:

Dong, Hengyang;
Wu, Yujie;
Zheng, Hongbo;
Chen, Pandi;
Deng, Wenhao;
Ma, Liuhong;
Dong, Xinyuan;
Duan, Zhiyong;
Li, Mengke

Publication type:

Article

Photon-Number-Resolving Detection with Highly Efficient InGaAs/InAlAs Single-Photon Avalanche Diode.

Published in:

Photonics, 2024, v. 11, n. 8, p. 724, doi. 10.3390/photonics11080724

By:

Lee, Yi-Shan;
Chen, Tzu-Yang;
Chen, Yu-Ju;
Kan, Wei-Hong;
Liu, Xue-Wen;
Shi, Jin-Wei

Publication type:

Article

Demonstration of Power-over-Fiber with Watts of Output Power Capabilities over Kilometers or at Cryogenic Temperatures.

Published in:

Photonics, 2024, v. 11, n. 7, p. 596, doi. 10.3390/photonics11070596

By:

Fafard, Simon;
Masson, Denis

Publication type:

Article

Monolithically Integrated Michelson Interferometer Using an InGaAs/InAlAs Quantum Cascade Laser at λ = 4 µm.

Published in:

Photonics, 2024, v. 11, n. 7, p. 593, doi. 10.3390/photonics11070593

By:

Hofstetter, Daniel;
Beck, Hans;
Bour, David P.

Publication type:

Article

Kerr-Lens Mode-Locked Yb:BaF 2 Laser.

Published in:

Photonics, 2024, v. 11, n. 4, p. 322, doi. 10.3390/photonics11040322

By:

Li, Zhi-Qiang;
Lin, Zhang-Lang;
Loiko, Pavel;
Zeng, Huang-Jun;
Zhang, Ge;
Nie, Hai-Yu;
Normani, Simone;
Benayad, Abdelmjid;
Camy, Patrice;
Mateos, Xavier;
Petrov, Valentin;
Chen, Weidong

Publication type:

Article

Photoreflectance Analysis of InAsPSb/InGaAs Multi-Quantum Well LED Structures with Different Well/Barrier Numbers.

Published in:

Photonics, 2024, v. 11, n. 3, p. 277, doi. 10.3390/photonics11030277

By:

Zeinalvand Farzin, Behnam;
Seyedein Ardebili, S. Bahareh;
Kang, Tae In;
Kim, Jong Su;
Nguyen, Phuc Dinh;
Lee, Sang Jun

Publication type:

Article

An InGaAs Vertical-Cavity Surface-Emitting Laser Emitting at 1130 nm for Silicon Photonics Application.

Published in:

Photonics, 2024, v. 11, n. 3, p. 207, doi. 10.3390/photonics11030207

By:

Fang, Yunfeng;
Zhang, Yang;
Li, Chuanchuan;
Li, Jian;
Wang, Yongli;
Wei, Xin

Publication type:

Article

Tunable Vernier Series-Coupled Microring Resonator Filters Based on InGaAs/InAlAs Multiple Quantum-Well Waveguide.

Published in:

Photonics, 2023, v. 10, n. 11, p. 1256, doi. 10.3390/photonics10111256

By:

Peng, Zhifeng;
Arakawa, Taro

Publication type:

Article

Superluminescent Diodes Based on Chirped InGaAs/GaAs Quantum Well-Dot Layers.

Published in:

Photonics, 2023, v. 10, n. 10, p. 1090, doi. 10.3390/photonics10101090

By:

Maximov, Mikhail V.;
Gordeev, Nikita Yu.;
Shernyakov, Yuri M.;
Kornyshov, Grigoriy O.;
Beckman, Artem A.;
Payusov, Alexey S.;
Mintairov, Sergey A.;
Kalyuzhnyy, Nikolay A.;
Kulagina, Marina M.;
Zhukov, Alexey E.

Publication type:

Article

Impact of Device Topology on the Performance of High-Speed 1550 nm Wafer-Fused VCSELs.

Published in:

Photonics, 2023, v. 10, n. 6, p. 660, doi. 10.3390/photonics10060660

By:

Babichev, Andrey;
Blokhin, Sergey;
Gladyshev, Andrey;
Karachinsky, Leonid;
Novikov, Innokenty;
Blokhin, Alexey;
Bobrov, Mikhail;
Kovach, Yakov;
Kuzmenkov, Alexander;
Nevedomsky, Vladimir;
Maleev, Nikolay;
Kolodeznyi, Evgenii;
Voropaev, Kirill;
Vasilyev, Alexey;
Ustinov, Victor;
Egorov, Anton;
Han, Saiyi;
Tian, Si-Cong;
Bimberg, Dieter

Publication type:

Article

Systematic Analysis of a Modified Uni-Traveling-Carrier Photodiode under High-Power Operating Conditions.

Published in:

Photonics, 2023, v. 10, n. 4, p. 471, doi. 10.3390/photonics10040471

By:

Xiong, Wanshu;
Peng, Zhangwan;
Yao, Ruoyun;
Guo, Qianwen;
Chi, Chaodan;
Ji, Chen

Publication type:

Article

Half-Ring Microlasers Based on InGaAs Quantum Well-Dots with High Material Gain.

Published in:

Photonics, 2023, v. 10, n. 3, p. 290, doi. 10.3390/photonics10030290

By:

Zubov, Fedor;
Moiseev, Eduard;
Maximov, Mikhail;
Vorobyev, Alexander;
Mozharov, Alexey;
Shernyakov, Yuri;
Kalyuzhnyy, Nikolay;
Mintairov, Sergey;
Kulagina, Marina;
Dubrovskii, Vladimir;
Kryzhanovskaya, Natalia;
Zhukov, Alexey

Publication type:

Article

Two-State Lasing in Microdisk Laser Diodes with Quantum Dot Active Region.

Published in:

Photonics, 2023, v. 10, n. 3, p. 235, doi. 10.3390/photonics10030235

By:

Makhov, Ivan;
Ivanov, Konstantin;
Moiseev, Eduard;
Dragunova, Anna;
Fominykh, Nikita;
Shernyakov, Yuri;
Maximov, Mikhail;
Kryzhanovskaya, Natalia;
Zhukov, Alexey

Publication type:

Article

High-Efficiency and High-Power Multijunction InGaAs/InP Photovoltaic Laser Power Converters for 1470 nm.

Published in:

Photonics, 2022, v. 9, n. 7, p. N.PAG, doi. 10.3390/photonics9070438

By:

Fafard, Simon;
Masson, Denis P.

Publication type:

Article

Detailed Balance-Limiting Efficiency of Solar Cells with Dual Intermediate Bands Based on InAs/InGaAs Quantum Dots.

Published in:

Photonics, 2022, v. 9, n. 5, p. 290, doi. 10.3390/photonics9050290

By:

Wang, Shenglin;
Yang, Xiaoguang;
Chai, Hongyu;
Lv, Zunren;
Wang, Shuai;
Wang, Haomiao;
Wang, Hong;
Meng, Lei;
Yang, Tao

Publication type:

Article

Formation and reduction of pyramidal hillocks on InGaAs/InP(111)A.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 4, p. 644, doi. 10.1002/pssb.201552466

By:

Yamada, Hisashi;
Ichikawa, Osamu;
Fukuhara, Noboru;
Hata, Masahiko

Publication type:

Article

Spin-orbit interaction in the magnetization of two-dimensional electron systems.

Published in:

Physica Status Solidi (B), 2014, v. 251, n. 9, p. 1710, doi. 10.1002/pssb.201350203

By:

Wilde, M. A.;
Rupprecht, B.;
Herzog, F.;
Ibrahim, A.;
Grundler, D.

Publication type:

Article

Orientation of electron spins in hybrid ferromagnet-semiconductor nanostructures.

Published in:

Physica Status Solidi (B), 2014, v. 251, n. 9, p. 1663, doi. 10.1002/pssb.201350236

By:

Akimov, I. A.;
Korenev, V. L.;
Sapega, V. F.;
Langer, L.;
Zaitsev, S. V.;
Danilov, Yu. A.;
Yakovlev, D. R.;
Bayer, M.

Publication type:

Article

Spin mode locking in quantum dots revisited.

Published in:

Physica Status Solidi (B), 2014, v. 251, n. 9, p. 1892, doi. 10.1002/pssb.201350235

By:

Varwig, S.;
Greilich, A.;
Yakovlev, D. R.;
Bayer, M.

Publication type:

Article

Ultra-wideband metamaterial absorber doped GaAs in the infrared region.

Published in:

Journal of Electromagnetic Waves & Applications, 2021, v. 35, n. 8, p. 1088, doi. 10.1080/09205071.2020.1870163

By:

Ruan, Jiufu;
Ji, Shengwei;
Tao, Zhi;
Lan, Feng

Publication type:

Article

High Speed 1550 nm Indium Gallium Arsenide-Indium Phosphide Photodetector.

Published in:

International Journal of High Speed Electronics & Systems, 2023, v. 32, n. 2-4, p. 1, doi. 10.1142/S0129156423500131

By:

Perez, Erik;
LaComb, Ronald;
Jain, Faquir

Publication type:

Article

Investigation of Structural Parameters Impact on Sensitivity of InP/InGaAs/InP Channel Double Gate MOSFET for Biosensing Application.

Published in:

International Journal of High Speed Electronics & Systems, 2021, v. 30, n. 1/2, p. 1, doi. 10.1142/S0129156421400048

By:

Mohanty, Soumya S.;
Mishra, Sikha;
Mohapatra, Meryleen;
Mishra, Guru Prasad

Publication type:

Article

Comparison of Buffer Layer Grading Approaches in InGaAs/GaAs (001).

Published in:

International Journal of High Speed Electronics & Systems, 2020, v. 29, n. 1-4, p. N.PAG, doi. 10.1142/S0129156420400029

By:

Raphael, Johanna;
Kujofsa, Tedi;
Ayers, J. E.

Publication type:

Article

Threading Dislocation Behavior in InGaAs/GaAs (001) Superlattice Buffer Layers.

Published in:

International Journal of High Speed Electronics & Systems, 2019, v. 38, n. 3/4, p. N.PAG, doi. 10.1142/S0129156419400172

By:

Islam, Md Tanvirul;
Kujofsa, Tedi;
Chen, Xinkang;
Ayers, J. E.

Publication type:

Article

Chirped Superlattices as Adjustable Strain Platforms for Metamorphic Semiconductor Devices.

Published in:

International Journal of High Speed Electronics & Systems, 2018, v. 27, n. 1/2, p. N.PAG, doi. 10.1142/S0129156418400098

By:

Islam, Md Tanvirul;
Chen, Xinkang;
Kujofsa, Tedi;
Ayers, John E.

Publication type:

Article

Characterization of High Mobility InAs/InGaAs/InAlAs Composite Channels by THz Magneto-Photoresponse Spectroscopy.

Published in:

International Journal of High Speed Electronics & Systems, 2015, v. 24, n. 1/2, p. -1, doi. 10.1142/S0129156415200049

By:

Pakmehr, Mehdi;
McCombe, B. D.;
Chiatti, Olivio;
Fischer, S. F.;
Heyn, Ch.;
Hansen, W.

Publication type:

Article

Detection of Terahertz Radiation by Dense Arrays of InGaAs Transistors.

Published in:

International Journal of High Speed Electronics & Systems, 2015, v. 24, n. 1/2, p. -1, doi. 10.1142/S0129156415500020

By:

Yermolayev, D. M.;
Polushkin, E. A.;
Shapoval, S. Yu.;
Popov, V. V.;
Marem'yanin, K. V.;
Gavrilenko, V. I.;
Maleev, N. A.;
Ustinov, V. M.;
Zemlyakov, V. E.;
Yegorkin, V. I.;
Bespalov, V. A.;
Muravjov, A. V.;
Rumyantsev, S. L.;
Shur, M. S.

Publication type:

Article

High-speed three-dimensional reciprocal-space mapping during molecular beam epitaxy growth of InGaAs.

Published in:

Journal of Applied Crystallography, 2012, v. 45, n. 5, p. 1046, doi. 10.1107/S0021889812036175

By:

Hu, Wen;
Suzuki, Hidetoshi;
Sasaki, Takuo;
Kozu, Miwa;
Takahasi, Masamitu

Publication type:

Article

Fabrication and Characterization of Black GaAs Nanoarrays via ICP Etching.

Published in:

Nanoscale Research Letters, 2021, v. 16, n. 1, p. 1, doi. 10.1186/s11671-021-03479-1

By:

Ma, Jing;
Zhao, Yongqiang;
Liu, Wen;
Song, Peishuai;
Yang, Liangliang;
Wei, Jiangtao;
Yang, Fuhua;
Wang, Xiaodong

Publication type:

Article

Novel octa-graphene-like structures based on GaP and GaAs.

Published in:

Journal of Molecular Modeling, 2023, v. 29, n. 7, p. 1, doi. 10.1007/s00894-023-05608-2

By:

Laranjeira, José A. S.;
Martins, Nicolas F.;
Azevedo, Sérgio A.;
Fabris, Guilherme S. L.;
Sambrano, Julio R.

Publication type:

Article

Image Monitoring of Pharmaceutical Blending Processes and the Determination of an End Point by Using a Portable Near-Infrared Imaging Device Based on a Polychromator-Type Near-Infrared Spectrometer with a High-speed and High-Resolution Photo Diode Array Detector

Published in:

Molecules, 2015, v. 20, n. 3, p. 4007, doi. 10.3390/molecules20034007

By:

Kodai Murayama;
Daitaro Ishikawa;
Takuma Genkawa;
Hiroyuki Sugino;
Makoto Komiyama;
Yukihiro Ozaki

Publication type:

Article

Electrical Characteristics of p–i–n Mesa-Photodiodes Based on InGaAs/InP Heterostructures.

Published in:

Journal of Applied Spectroscopy, 2024, v. 91, n. 2, p. 378, doi. 10.1007/s10812-024-01730-y

By:

Gogorishvili, I.;
Tutunjyan, A.;
Sakharova, T.;
Melikyan, M.;
Khuchua, N.;
Kuparashvili, D.

Publication type:

Article

Near Infrared Spectrometry of Clinically Significant Fatty Acids Using Multicomponent Regression.

Published in:

Journal of Applied Spectroscopy, 2016, v. 83, n. 5, p. 811, doi. 10.1007/s10812-016-0368-0

By:

Kalinin, A.;
Krasheninnikov, V.;
Sviridov, A.;
Titov, V.

Publication type:

Article