A Theoretical Analysis of the Frequency Response in p-i-n Photodiodes that Use InGaAs/InP Materials.
- Published in:
- Micromachines, 2025, v. 16, n. 7, p. 764, doi. 10.3390/mi16070764
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- Publication type:
- Article
Works matching DE "INDIUM gallium arsenide"
Results: 570
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Radiation Hardened Infrared Photodetectors Based on a Narrow Bandgap Conjugated Polymer Semiconductor.
- Published in:
- Advanced Electronic Materials, 2025, v. 11, n. 11, p. 1, doi. 10.1002/aelm.202400918
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- Publication type:
- Article
3
Electron–Phonon Interactions in Extended InGaAs Photodetectors via Photoluminescence Spectroscopy.
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- Journal of Electronic Materials, 2025, v. 54, n. 8, p. 6652, doi. 10.1007/s11664-025-12015-1
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- Publication type:
- Article
4
Time-Resolved Calibration of Photon Detection Efficiency and Afterpulse Probability in 100 MHz Gated InGaAs/InP Single-Photon Avalanche Diodes.
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- Photonics, 2025, v. 12, n. 6, p. 534, doi. 10.3390/photonics12060534
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- Publication type:
- Article
5
Unraveling the Gain Mechanism in High Performance Solution-Processed PbS Infrared PIN Photodiodes.
- Published in:
- Advanced Functional Materials, 2015, v. 25, n. 8, p. 1233, doi. 10.1002/adfm.201403673
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- Publication type:
- Article
6
Facile Fabrication of PbS Nanocrystal:C<sub>60</sub> Fullerite Broadband Photodetectors with High Detectivity.
- Published in:
- Advanced Functional Materials, 2013, v. 23, n. 33, p. 4149, doi. 10.1002/adfm.201202818
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- Publication type:
- Article
7
Aquiring High-Quality Microscopic Images Through Silicon Without Damaging the Finished Product.
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- Microscopy & Microanalysis, 2019, p. 1138, doi. 10.1017/S1431927618006177
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- Publication type:
- Article
8
Evaluating Compositional Variation in InGaAs Random Alloys Using Atom Probe Tomography.
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- Microscopy & Microanalysis, 2019, p. 398, doi. 10.1017/S1431927618002489
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- Publication type:
- Article
9
Comparative Performance of NIR-Hyperspectral Imaging Systems.
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- Foundations (2673-9321), 2022, v. 2, n. 3, p. 523, doi. 10.3390/foundations2030035
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- Publication type:
- Article
10
Magnolia Pushes Ahead with InGaAs, CIGS Projects.
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- Solar Today, 2012, v. 26, n. 2, p. 12
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- Publication type:
- Article
11
Development of Near-Infrared-Emitting Scintillators Based on Rare-Earth-Doped Garnet Crystals--Part 1.
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- Sensors & Materials, 2017, v. 29, n. 10, p. 1407, doi. 10.18494/SAM.2017.1620
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- Publication type:
- Article
12
Performance Evaluation of GaAs and InGaAs Schottky Mixers at 0.3 THz: A Comparative Analysis Between Optical and Electrical Pumping in THz Wireless Communication Systems.
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- Electronics (2079-9292), 2025, v. 14, n. 10, p. 1957, doi. 10.3390/electronics14101957
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- Publication type:
- Article
13
Effects of Diffusion Barrier Layers on the Performance of Lattice-Mismatched Metamorphic In 0.83 Ga 0.17 As Photodetectors.
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- Electronics (2079-9292), 2024, v. 13, n. 7, p. 1339, doi. 10.3390/electronics13071339
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- Publication type:
- Article
14
Efficiency Assessment of Traditional GaAs and Low-Power InGaAs Schottky Diodes in Full-Band Mixers at 0.3 THz.
- Published in:
- Electronics (2079-9292), 2023, v. 12, n. 21, p. 4518, doi. 10.3390/electronics12214518
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- Publication type:
- Article
15
An X-Band State Adjustable Low Noise Amplifier Using Current Reuse Technique.
- Published in:
- Electronics (2079-9292), 2023, v. 12, n. 3, p. 696, doi. 10.3390/electronics12030696
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- Publication type:
- Article
16
Heterogeneous and Monolithic 3D Integration Technology for Mixed-Signal ICs.
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- Electronics (2079-9292), 2022, v. 11, n. 19, p. 3013, doi. 10.3390/electronics11193013
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- Publication type:
- Article
17
Evaluation of the Long-Term Reliability of Open-Tube Diffused Planar InGaAs/InP Avalanche Photodiodes under a Hybrid of Thermal and Electrical Stresses.
- Published in:
- Electronics (2079-9292), 2022, v. 11, n. 5, p. 802, doi. 10.3390/electronics11050802
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- Publication type:
- Article
18
High-Performance InGaAs HEMTs on Si Substrates for RF Applications.
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- Electronics (2079-9292), 2022, v. 11, n. 2, p. 259, doi. 10.3390/electronics11020259
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- Publication type:
- Article
19
Performance of Dual-Band Short-Wave Infrared InGaAs Focal-Plane Arrays with Interference Narrow-Band Filter.
- Published in:
- Electronics (2079-9292), 2019, v. 8, n. 12, p. 1537, doi. 10.3390/electronics8121537
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- Publication type:
- Article
20
InGaAs-based Graded Gap Active Elements with Static Cathode Domain for Terahertz Range.
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- Journal of Nano- & Electronic Physics, 2019, v. 11, n. 1, p. 1, doi. 10.21272/jnep.11(1).01006
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- Publication type:
- Article
21
Some Aspects of Phosphorus Diffusion in Germanium in In<sub>0,01</sub>Ga<sub>0,99</sub>As / In<sub>0,56</sub>Ga<sub>0,44</sub>P / Ge Heterostructures.
- Published in:
- Journal of Nano- & Electronic Physics, 2013, v. 5, n. 4, p. 04021-1
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- Publication type:
- Article
22
Lattice‐Mismatched Epitaxy of InAs on (111)A‐Oriented Substrate: Metamorphic Layer Growth and Self‐Assembly of Quantum Dots.
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- Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 13, p. 1, doi. 10.1002/pssa.202300767
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- Article
23
Responsivity Enhancement of Wafer‐Bonded In<sub>0.53</sub>Ga<sub>0.47</sub>As Photo‐Field‐Effect Transistor on Si Substrate via Equivalent Oxide Thickness Scaling.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 13, p. 1, doi. 10.1002/pssa.202300664
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- Publication type:
- Article
24
Current Enhancement of Ultrathin GaAs Solar Cells with Rear Light Scattering Structures Using Block Copolymers.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 13, p. 1, doi. 10.1002/pssa.202300586
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- Publication type:
- Article
25
Investigating the Enhanced Photoresponse in MoS<sub>2</sub>/GaAs Heterojunction.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 1, p. 1, doi. 10.1002/pssa.202200378
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- Article
26
Theoretical study of stress and strain distribution in coupled pyramidal InAs quantum dots embedded in GaAs by finite element method.
- Published in:
- European Physical Journal B: Condensed Matter, 2019, v. 92, n. 7, p. N.PAG, doi. 10.1140/epjb/e2019-100090-5
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- Article
27
Multi-color photonic integrated circuits based on homogeneous integration of quantum cascade lasers.
- Published in:
- Nature Communications, 2025, v. 16, n. 1, p. 1, doi. 10.1038/s41467-025-58905-0
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- Publication type:
- Article
28
Calibration of Short-Wave Infrared Spectrometer for Atmosphere Methane Monitoring.
- Published in:
- Remote Sensing, 2025, v. 17, n. 5, p. 851, doi. 10.3390/rs17050851
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- Publication type:
- Article
29
Atmospheric CW S-Lidars with Si/InGaAs Arrays: Potentialities in Real Environment.
- Published in:
- Remote Sensing, 2023, v. 15, n. 9, p. 2291, doi. 10.3390/rs15092291
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- Publication type:
- Article
30
Calibration of Automatic Sun Photometer with Temperature Correction in Field Environment.
- Published in:
- Remote Sensing, 2022, v. 14, n. 1, p. 66, doi. 10.3390/rs14010066
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- Publication type:
- Article
31
Possible options for improvement in performance of GaAsSb/InGaAs double quantum well heterostructure operating in mid-infrared region.
- Published in:
- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2025, v. 39, n. 21, p. 1, doi. 10.1142/S0217979225501917
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- Article
32
The effect of temperature, hydrostatic pressure and magnetic field on the nonlinear optical properties of AlGaAs/GaAs semi-parabolic quantum well.
- Published in:
- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2019, v. 33, n. 27, p. N.PAG, doi. 10.1142/S0217979219503259
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- Article
33
The electrical current characteristics of thermally annealed Co/anodic oxide layer/n-GaAs sandwich structures.
- Published in:
- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2019, v. 33, n. 21, p. N.PAG, doi. 10.1142/S0217979219502321
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- Article
34
Plasmon modes in graphene — GaAs heterostructures at finite temperature.
- Published in:
- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2019, v. 33, n. 16, p. N.PAG, doi. 10.1142/S0217979219501741
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- Article
35
The electron-longitudinal optical phonon scattering rate in GaInAsP/InP stepped quantum well.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2016, v. 30, n. 26, p. 1, doi. 10.1142/S0217979216501964
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- Article
36
Infrared transitions between hydrogenic states in GaInNAs/GaAs quantum wells.
- Published in:
- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2016, v. 30, n. 22, p. -1, doi. 10.1142/S0217979216501393
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- Article
37
Simulation of -factor, bandgap frequency and defect band structure dependence upon hole radius of air formed in InGaAs waveguides.
- Published in:
- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2016, v. 30, n. 21, p. -1, doi. 10.1142/S0217979216501447
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- Article
38
Evaluating the effects of nonlinear optical gain and thermal carrier escape on the performance of InGaAs/GaAs self-assembled quantum dot lasers.
- Published in:
- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2016, v. 30, n. 19, p. -1, doi. 10.1142/S0217979216501216
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- Publication type:
- Article
39
Effects of different settings for 940 nm diode laser on expanded suture in rats.
- Published in:
- Angle Orthodontist, 2019, v. 89, n. 3, p. 446, doi. 10.2319/052318-392.1
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- Publication type:
- Article
40
Comparative Analysis of Temperature-Dependent Characteristics of GaAs and InGaAs Quantum Wire-Based Heterostructures.
- Published in:
- Journal of Electronic Materials, 2025, v. 54, n. 5, p. 4123, doi. 10.1007/s11664-025-11841-7
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- Publication type:
- Article
41
Analysis of III–V Heterojunction TFET for High-Frequency Analog Applications.
- Published in:
- Journal of Electronic Materials, 2024, v. 53, n. 9, p. 5468, doi. 10.1007/s11664-024-11261-z
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- Publication type:
- Article
42
Analysis of InGaAs/InP p-I-n Photodiode Failed by Electrostatic Discharge.
- Published in:
- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5150, doi. 10.1007/s11664-023-10502-x
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- Publication type:
- Article
43
Bandgap Engineering and Short-Wavelength Infrared Detection of InGaAs/GaAsSb Superlattices Lattice-Matched to InP.
- Published in:
- Journal of Electronic Materials, 2022, v. 51, n. 9, p. 4703, doi. 10.1007/s11664-022-09745-x
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- Publication type:
- Article
44
Prediction of Shockley-Read-Hall Centers in Strained Layer Superlattices for Mid-Wave Infrared Photodetectors.
- Published in:
- Journal of Electronic Materials, 2022, v. 51, n. 9, p. 4695, doi. 10.1007/s11664-022-09741-1
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- Article
45
Correction to: Effect of Polymer Capping Layer on III-V Materials: Disorder's Control in P3HT/BGaAs/GaAs Heterostructure.
- Published in:
- 2022
- By:
- Publication type:
- Correction Notice
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Effect of Polymer Capping Layer on III-V Materials: Disorder's Control in P3HT/BGaAs/GaAs Heterostructure.
- Published in:
- Journal of Electronic Materials, 2022, v. 51, n. 7, p. 3521, doi. 10.1007/s11664-022-09504-y
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- Publication type:
- Article
47
Design, Fabrication, and Characteristic Analysis of 64 × 64 InGaAs/InP Single-Photon Avalanche Diode Array.
- Published in:
- Journal of Electronic Materials, 2022, v. 51, n. 5, p. 2692, doi. 10.1007/s11664-022-09531-9
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- Publication type:
- Article
48
The Influence of Growth Parameters of Strain InGaAs Quantum Wells on Luminescent Properties.
- Published in:
- Journal of Electronic Materials, 2022, v. 51, n. 3, p. 1421, doi. 10.1007/s11664-021-09394-6
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- Publication type:
- Article
49
Components distribution in Cu(In,Ga)Se films prepared by selenization of evaporated metallic precursors on bare and ITO-coated glass substrates.
- Published in:
- Journal of Materials Science, 2012, v. 47, n. 4, p. 1836, doi. 10.1007/s10853-011-5970-1
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- Article
50
Research of In0.48Ga0.52P/GaAs Heterojunction Interface Properties Improvement Deposited by MOCVD.
- Published in:
- Crystal Research & Technology, 2025, v. 60, n. 3, p. 1, doi. 10.1002/crat.202400198
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- Publication type:
- Article