High-temperature buried InP/GaInAsP heterostructure laser diode emitting at 1310 nm.
- Published in:
- Inorganic Materials, 2014, v. 50, n. 9, p. 888, doi. 10.1134/S0020168514090167
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- Publication type:
- Article
Works matching DE "INDIUM arsenide phosphide"
Results: 3
1
2
Frequency noise analysis of 1.55 µm indium arsenide/indium phosphide quantum dot lasers: impact of non-linear gain and direct carrier transition.
- Published in:
- IET Optoelectronics (Wiley-Blackwell), 2016, v. 10, n. 4, p. 134, doi. 10.1049/iet-opt.2015.0027
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- Publication type:
- Article
3
Bandgap Engineering of InGaAsP/InP Multiple Quantum Well Structure by Dielectric Sputtering.
- Published in:
- PIERS Proceedings, 2014, p. 2435
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- Publication type:
- Article