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Works matching DE "INDIUM arsenide epitaxy"

Results: 3

1

InAs QDs in a metamorphic InGaAs matrix, grown by MOCVD.

Published in:

Semiconductors, 2017, v. 51, n. 5, p. 672, doi. 10.1134/S1063782617050189

By:

Mintairov, S.;
Kalyuzhnyy, N.;
Maximov, M.;
Nadtochiy, A.;
Nevedomskiy, V.;
Zhukov, A.

Publication type:

Article

2

Conduction- and Valence-Band Energies in Bulk InAsSb and Type II InAsSb/InAs Strained-Layer Superlattices.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 5, p. 918, doi. 10.1007/s11664-013-2528-9

By:

Lin, Youxi;
Wang, Ding;
Donetsky, Dmitry;
Shterengas, Leon;
Kipshidze, Gela;
Belenky, Gregory;
Svensson, Stefan;
Sarney, Wendy;
Hier, Harry

Publication type:

Article

3

Electrooptical Characterization of MWIR InAsSb Detectors.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2671, doi. 10.1007/s11664-012-2182-7

By:

D'Souza, A.I.;
Robinson, E.;
Ionescu, A.C.;
Okerlund, D.;
Lyon, T.J.;
Sharifi, H.;
Roebuck, M.;
Yap, D.;
Rajavel, R.D.;
Dhar, N.;
Wijewarnasuriya, P.S.;
Grein, C.

Publication type:

Article