Electrical and electroluminescent properties of InAsSb-Based LEDs (λ = 3.85-3.95 μm) in the temperature interval 20-200°C.
- Published in:
- Technical Physics, 2012, v. 57, n. 1, p. 69, doi. 10.1134/S1063784212010203
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- Article
Works matching DE "INDIUM arsenide antimonide"
Results: 8
1
2
The effect of current crowding on the internal quantum efficiency of InAsSb/InAs light-emitting diodes.
- Published in:
- Technical Physics Letters, 2012, v. 38, n. 5, p. 456, doi. 10.1134/S1063785012050252
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- Publication type:
- Article
3
InAs/InAsSb Strain-Balanced Superlattices for Longwave Infrared Detectors.
- Published in:
- Sensors (14248220), 2019, v. 19, n. 8, p. 1907, doi. 10.3390/s19081907
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- Article
4
Intraband Radiation Absorption by Holes in InAsSb/AlSb and InGaAsP/InP Quantum Wells.
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- Semiconductors, 2018, v. 52, n. 2, p. 195, doi. 10.1134/S1063782618020112
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- Article
5
Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2-300 K.
- Published in:
- Semiconductors, 2017, v. 51, n. 2, p. 239, doi. 10.1134/S1063782617020117
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- Article
6
Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures.
- Published in:
- Semiconductors, 2017, v. 51, n. 2, p. 260, doi. 10.1134/S1063782617020269
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- Publication type:
- Article
7
Light emitting diode-photodiode optoelectronic pairs based on the InAs/InAsSb/InAsSbP heterostructure for the detection of carbon dioxide.
- Published in:
- Semiconductors, 2015, v. 49, n. 7, p. 980, doi. 10.1134/S1063782615070052
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- Article
8
Modeling InAs/GaSb and InAs/InAsSb Superlattice Infrared Detectors.
- Published in:
- Journal of Electronic Materials, 2014, v. 43, n. 8, p. 2984, doi. 10.1007/s11664-014-3169-3
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- Publication type:
- Article