Works matching DE "INDIUM arsenide"
Results: 330
Main scattering mechanisms in InAs/GaAs multi-quantum-well: a new approach by the global optimization method.
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- Journal of Materials Science, 2016, v. 51, n. 3, p. 1333, doi. 10.1007/s10853-015-9451-9
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- Article
Theoretical prediction of structural parameters, band-gap energies, and mixing enthalpies of ScInAs alloys.
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- Journal of Materials Science, 2013, v. 48, n. 14, p. 4899, doi. 10.1007/s10853-013-7270-4
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- Article
Synthesis, elaboration and characterization of the new material CuIn<sub>3</sub>S<sub>5</sub> thin films.
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- Journal of Materials Science, 2009, v. 44, n. 17, p. 4743, doi. 10.1007/s10853-009-3741-z
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- Article
The electronic band structure of InN, InAs and InSb compounds.
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- Journal of Materials Science, 2008, v. 43, n. 8, p. 2935, doi. 10.1007/s10853-007-1794-4
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- Article
Transport properties of InAs epilayers grown on GaAs substrates by using the prelayer technique.
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- Journal of Materials Science, 2004, v. 39, n. 7, p. 2637, doi. 10.1023/B:JMSC.0000020047.61719.50
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- Article
In situ XPS study of InAs oxidation in glow-discharge plasma.
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- Journal of Structural Chemistry, 2011, v. 52, p. 153, doi. 10.1134/S0022476611070201
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- Article
Direct growth of InAs/GaSb type II superlattice photodiodes on silicon substrates.
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- IET Optoelectronics (Wiley-Blackwell), 2018, v. 12, n. 1, p. 2, doi. 10.1049/iet-opt.2017.0078
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- Article
Fabrication and analysis of multijunction solar cells with a quantum dot (In)GaAs junction.
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- Progress in Photovoltaics, 2014, v. 22, n. 11, p. 1172, doi. 10.1002/pip.2378
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- Article
Ab initio calculations of polarization, piezoelectric constants, and elastic constants of InAs and InP in the wurtzite phase.
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- Journal of Experimental & Theoretical Physics, 2015, v. 121, n. 2, p. 246, doi. 10.1134/S106377611508018X
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- Article
Performance of a Double Gate Nanoscale MOSFET (DG-MOSFET) Based on Novel Channel Materials.
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- Journal of Nano- & Electronic Physics, 2013, v. 5, n. 1, p. 01017-1
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- Article
Strain-Induced Band Profile of Stacked InAs/GaAs Quantum Dots.
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- Walailak Journal of Science & Technology, 2014, v. 11, n. 5-8, p. 403
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- Article
Transient behaviour of quantum-dot saturable absorber mirrors at varying excitation fluence.
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- Applied Physics B: Lasers & Optics, 2014, v. 116, n. 4, p. 919, doi. 10.1007/s00340-014-5778-1
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- Article
AlGaInAs multiple-quantum-well 1.2-μm semiconductor laser in-well pumped by an Yb-doped pulsed fiber amplifier.
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- Applied Physics B: Lasers & Optics, 2012, v. 106, n. 1, p. 57, doi. 10.1007/s00340-011-4669-y
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- Article
High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers.
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- Applied Physics B: Lasers & Optics, 2011, v. 103, n. 3, p. 609, doi. 10.1007/s00340-010-4290-5
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- Article
Two-dimensional array of room-temperature nanophotonic logic gates using InAs quantum dots in mesa structures.
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- Applied Physics B: Lasers & Optics, 2011, v. 103, n. 3, p. 537, doi. 10.1007/s00340-011-4375-9
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- Article
Vertical integration of ultrafast semiconductor lasers.
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- Applied Physics B: Lasers & Optics, 2007, v. 88, n. 4, p. 493, doi. 10.1007/s00340-007-2760-1
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- Article
Critical layer thickness of GaIn(N)As(Sb) QWs on GaAs and InP substrates for (001) and (111) orientations.
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- European Physical Journal B: Condensed Matter, 2009, v. 69, n. 2, p. 211, doi. 10.1140/epjb/e2009-00151-2
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- Article
Contribution of Series Resistance in Modelling of High-Temperature Type II Superlattice p-i-n Photodiodes.
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- Advances in Optical Technologies, 2012, p. 1, doi. 10.1155/2012/926365
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- Article
Diagnostics of semiconductor structures by means of an apertureless near-field terahertz microscope.
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- Radiophysics & Quantum Electronics, 2012, v. 54, n. 8/9, p. 577, doi. 10.1007/s11141-012-9316-x
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- Article
Quantum technology: Electrons spin in the field.
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- Nature, 2010, v. 468, n. 7327, p. 1045, doi. 10.1038/4681045a
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- Article
Electronics: A diverse printed future.
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- Nature, 2010, v. 468, n. 7321, p. 177, doi. 10.1038/468177a
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- Article
Solid-state physics: Join the dots.
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- Nature, 2008, p. 256, doi. 10.1038/451256a
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- Article
PL of low-density InAs/GaAs quantum dots with different bimodal populations.
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- Micro & Nano Letters (Wiley-Blackwell), 2017, v. 12, n. 9, p. 599, doi. 10.1049/mnl.2016.0779
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- Article
Performance investigation of hetero material (InAs/Si)-based charge plasma TFET.
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- Micro & Nano Letters (Wiley-Blackwell), 2017, v. 12, n. 6, p. 358, doi. 10.1049/mnl.2016.0688
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- Article
Thermodynamic modelling of miscibility in (InAs) x (GaAs) 1−x solid solutions.
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- Phase Transitions, 2013, v. 86, n. 5, p. 516, doi. 10.1080/01411594.2012.703669
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- Article
Quantum dot electrons as controllable scattering centers in the vicinity of a two-dimensional electron gas.
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- Phase Transitions, 2006, v. 79, n. 9/10, p. 765, doi. 10.1080/01411590600960893
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- Article
Distortions of the coulomb blockade conductance line in scanning gate measurements of inas nanowire based quantum dots.
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- Journal of Experimental & Theoretical Physics, 2013, v. 116, n. 1, p. 138, doi. 10.1134/S1063776112130195
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- Article
Negative differential conductance in InAs wire based double quantum dot induced by a charged AFM tip.
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- Journal of Experimental & Theoretical Physics, 2012, v. 115, n. 6, p. 1062, doi. 10.1134/S1063776112110131
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- Article
Electron spin resonance in InGaAs/GaAs heterostructures with a manganese δ layer.
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- Journal of Experimental & Theoretical Physics, 2011, v. 112, n. 2, p. 317, doi. 10.1134/S1063776111020051
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- Article
Long-wave type-II superlattice detectors with unipolar electron and hole barriers.
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- Optical Engineering, 2012, v. 51, n. 12, p. 1, doi. 10.1117/1.OE.51.12.124001
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- Article
Special Section on Infrared Detectors.
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- Optical Engineering, 2011, v. 50, n. 6, p. 060101, doi. 10.1117/1.3596724
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- Article
Investigation for optoelectronic characteristics and imaging performance of InAs quantum dot covered with In<sub>0</sub><sub>.</sub><sub>1</sub>Ga<sub>0</sub><sub>.</sub><sub>9</sub>As/GaAs multilayer based focal plane array.
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- Optical Engineering, 2011, v. 50, n. 6, p. 061004, doi. 10.1117/1.3572146
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- Article
Short-wavelength infrared imaging using low dark current InGaAs detector arrays and vertical-cavity surface-emitting laser illuminators.
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- Optical Engineering, 2011, v. 50, n. 6, p. 061011, doi. 10.1117/1.3579520
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- Article
High dynamic solutions for short-wavelength infrared imaging based on InGaAs.
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- Optical Engineering, 2011, v. 50, n. 6, p. 061014, doi. 10.1117/1.3585661
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- Article
Strain relaxation in InAs heteroepitaxy on lattice-mismatched substrates.
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- Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-61527-9
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- Article
Synthesis and Diameter-dependent Thermal Conductivity of InAs Nanowires.
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- Nano-Micro Letters, 2014, v. 6, n. 4, p. 301, doi. 10.1007/s40820-014-0002-8
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- Article
Vertical Transport in InAs/GaSb Superlattice at Low Temperatures.
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- Journal of Low Temperature Physics, 2015, v. 181, n. 5/6, p. 223, doi. 10.1007/s10909-015-1349-z
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- Article
Interface Intermixing in Type II InAs/GaInAsSb Quantum Wells Designed for Active Regions of Mid-Infrared-Emitting Interband Cascade Lasers.
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- Nanoscale Research Letters, 2015, v. 10, n. 1, p. 1, doi. 10.1186/s11671-015-1183-x
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- Article
Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates.
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- Nanoscale Research Letters, 2015, v. 10, n. 1, p. 1, doi. 10.1186/s11671-015-0930-3
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- Article
Quantum dot cascade laser.
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- Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-144
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- Article
Observation of linear and quadratic magnetic field-dependence of magneto-photocurrents in InAs/GaSb superlattice.
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- Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-279
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- Article
Suppression of dislocations by Sb spray in the vicinity of InAs/GaAs quantum dots.
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- Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-278
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- Article
Coupling effects on photoluminescence of exciton states in asymmetric quantum dot molecules.
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- Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-297
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- Article
Electronic properties of core-shell nanowire resonant tunneling diodes.
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- Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-509
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- Article
In-plane optical anisotropy of InAs/GaSb superlattices with alternate interfaces.
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- Nanoscale Research Letters, 2013, n. 6, p. 1, doi. 10.1186/1556-276X-8-298
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- Article
In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots.
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- Nanoscale Research Letters, 2013, v. 8, n. 2, p. 1, doi. 10.1186/1556-276X-8-86
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- Article
Statistical Analysis of Surface Reconstruction Domains on InAs Wetting Layer Preceding Quantum Dot Formation.
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- Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1901, doi. 10.1007/s11671-010-9754-3
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- Article
Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP.
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- Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1892, doi. 10.1007/s11671-010-9747-2
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- Article
Eighth International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces.
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- 2010
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- Publication type:
- Editorial
Temperature-Dependent Site Control of InAs/GaAs (001) Quantum Dots Using a Scanning Tunneling Microscopy Tip During Growth.
- Published in:
- Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1930, doi. 10.1007/s11671-010-9802-z
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- Publication type:
- Article