Works matching DE "INDIUM arsenide"

Results: 339

Emission and elastic strain study in GaAs/InGaAs/InGaAs/GaAs quantum wells with embedded InAs quantum dots.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 10, p. 7126, doi. 10.1007/s10854-017-6536-z

By:

Vega-Macotela, L.;
Torchynska, T.;
Polupan, G.

Publication type:

Article

Effects of substrate miscut on threading dislocation distribution in metamorphic GaInAs/AlInAs buffers.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 1, p. 581, doi. 10.1007/s10854-013-1626-z

By:

Sun, Yurun;
Li, Kuilong;
Dong, Jianrong;
Zeng, Xulu;
Yu, Shuzhen;
Zhao, Yongming;
Zhao, Chunyu;
Yang, Hui

Publication type:

Article

Negative photoinduced current and negative differential characteristics of new optoelectronic sensors with InAs/GaAs nanostructure for visual recognition.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 125, doi. 10.1007/s10854-007-9308-3

By:

Matsui, Y.;
Miyoshi, Y.

Publication type:

Article

INTERACTIVE MUSICAL DISPLAY OF QUANTUM DOT EMISSION SPECTRA.

Published in:

Leonardo, 2016, v. 49, n. 5, p. 440, doi. 10.1162/LEON_a_01293

By:

Janney, Eathan;
Muñoz-Matutano, Guillermo

Publication type:

Article

Low-light-level readout of a new quantum dots sensor at room temperature.

Published in:

Integrated Ferroelectrics, 2016, v. 171, n. 1, p. 152, doi. 10.1080/10584587.2016.1174912

By:

Wang, M. J.;
Guo, F. M.;
Yue, F. Y.;
Shen, J. H.

Publication type:

Article

A Nanoscale Technique of the Assembly Approach for InAs Nanowire Nano Device.

Published in:

Integrated Ferroelectrics, 2015, v. 167, n. 1, p. 205, doi. 10.1080/10584587.2015.1039419

By:

Xu, Ke;
Qi, Yuanwei;
Gao, Zhijun;
Lv, Jikun;
Wang, Xin;
Zhang, Ying;
Han, Ziyang;
Gao, Enyang

Publication type:

Article

Tight-binding Calculation of Exciton States in InAs Nanocrystals.

Published in:

Integrated Ferroelectrics, 2014, v. 156, n. 1, p. 29, doi. 10.1080/10584587.2014.906220

By:

Sukkabot, Worasak

Publication type:

Article

Nonlinear behavior of the emission in the periodic structure of InAs monolayers embedded in a GaAs matrix.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 4, p. n/a, doi. 10.1002/pssb.201600402

By:

Pozina, Galia;
Kaliteevski, Mikhail A.;
Nikitina, Ekaterina V.;
Denisov, Dmitrii V.;
Polyakov, Nikolai K.;
Pirogov, Evgenii V.;
Goray, Leonid I.;
Gubaydullin, Azat R.;
Ivanov, Konstantin A.;
Kaliteevskaya, Natalia A.;
Egorov, Anton Yu.

Publication type:

Article

Spatially indirect transitions in electric field tunable quantum dot diodes.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 3, p. 437, doi. 10.1002/pssb.201552591

By:

Rai, Ashish K.;
Gordon, Simon;
Ludwig, Arne;
Wieck, Andreas D.;
Zrenner, Artur;
Reuter, Dirk

Publication type:

Article

Quantum Dot Solar Cells with Nanoscale Barriers Around Dots: Experiment and Two-Diode Model Analysis.

Published in:

International Journal of High Speed Electronics & Systems, 2015, v. 24, n. 1/2, p. -1, doi. 10.1142/S0129156415200050

By:

Li, Yanshu;
Sergeev, Andrei;
Vagidov, Nizami;
Mitin, Vladimir;
Sablon, Kimberly

Publication type:

Article

MULTI-COLOR, BROADBAND QUANTUM WELL INFRARED PHOTODETECTORS FOR MID-, LONG-, AND VERY LONG-WAVELENGTH INFRARED APPLICATIONS.

Published in:

International Journal of High Speed Electronics & Systems, 2002, v. 12, n. 3, p. 761

By:

Li, S.S.

Publication type:

Article

High-resolution three-dimensional reciprocal-space mapping of InAs nanowires.

Published in:

Journal of Applied Crystallography, 2009, v. 42, n. 3, p. 369, doi. 10.1107/S0021889809009145

By:

Mariager, S. O.;
Lauridsen, S. L.;
Dohn, A.;
Bovet, N.;
Sørensen, C. B.;
Schlepütz, C. M.;
Willmott, P. R.;
Feidenhans'l, R.

Publication type:

Article

AFM, HR-XRD AND PL CHARACTERIZATION OF STACKED STRUCTURES In<sub>0.5</sub>Ga<sub>0.5</sub>As/GaAs QUANTUM DOTS.

Published in:

NANO (1793-2920), 2010, v. 5, n. 2, p. 127, doi. 10.1142/S1793292010002013

By:

ARYANTO, DIDIK;
OTHAMAN, ZULKAFLI;
AMERUDDIN, AMIRA S.;
ISMAIL, ABD. KHAMIM

Publication type:

Article

Amplified luminescence in InGaAs/AlGaAs laser diode arrays at high pump levels.

Published in:

Journal of Applied Spectroscopy, 2012, v. 78, n. 6, p. 811, doi. 10.1007/s10812-012-9537-y

By:

Bogdanovich, M.;
Kabanov, V.;
Lebiadok, Y.;
Ramanenka, A.;
Ryabtsev, A.;
Ryabtsev, G.;
Shchemelev, M.;
Mehta, S.

Publication type:

Article

InAs-based quantum cascade lasers emitting close to 25 μm.

Published in:

Electronics Letters (Wiley-Blackwell), 2019, v. 55, n. 3, p. 144, doi. 10.1049/el.2018.6413

By:

Loghmari, Z.;
Bahriz, M.;
Meguekam, A.;
Teissier, R.;
Baranov, A. N.

Publication type:

Article

InAs/GaAs quantum dot infrared hotodetectors on on-axis i (100) substrates.

Published in:

Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 24, p. 1395, doi. 10.1049/el.2018.7118

By:

Yoshikawa, H.;
Kwoen, J.;
Doe, T.;
Izumi, M.;
Iwamoto, S.;
Arakawa, Y.

Publication type:

Article

High-Q nanocavities in semiconductor-based three-dimensional photonic crystals.

Published in:

Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 5, p. 305, doi. 10.1049/el.2017.4542

By:

Takahashi, S.;
Tajiri, T.;
Watanabe, K.;
Ota, Y.;
Iwamoto, S.;
Arakawa, Y.

Publication type:

Article

Topological quantization of current in quantum tunnel contacts.

Published in:

JETP Letters, 2006, v. 83, n. 12, p. 563, doi. 10.1134/S0021364006120083

By:

Bulgadaev, S. A.

Publication type:

Article

Magnetic-Field-Induced Singularity in the Tunneling Current Through an InAs Quantum Dot.

Published in:

JETP Letters, 2005, v. 81, n. 6, p. 267, doi. 10.1134/1.1931013

By:

Khanin, Yu. N.;
Vdovin, E. E.

Publication type:

Article

Free Carrier Distribution Criterion in Quantum Dot Lasers.

Published in:

Mehran University Research Journal of Engineering & Technology, 2016, v. 35, n. 3, p. 309, doi. 10.22581/muet1982.1603.01

By:

SHAHID, HIFSA

Publication type:

Article

Electron g-factor in nanostructures: continuum media and atomistic approach.

Published in:

Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-79133-0

By:

Gawarecki, Krzysztof;
Zieliński, Michał

Publication type:

Article

High‐Performance Broadband Tungsten Disulfide Photodetector Decorated with Indium Arsenide Nanoislands.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 17, p. 1, doi. 10.1002/pssa.202000297

By:

Yang, Yuekun;
Liu, Guanyu;
Li, Panlin;
Zhang, Miao;
Wang, Jianlu;
Hu, Weida;
Xue, Zhongying;
Di, Zengfeng

Publication type:

Article

Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide.

Published in:

Nature Communications, 2018, v. 9, n. 1, p. 1, doi. 10.1038/s41467-018-03855-z

By:

Timm, Rainer;
Yngman, Sofie;
Knutsson, Johan V.;
McKibbin, Sarah R.;
Troian, Andrea;
Persson, Olof;
Schnadt, Joachim;
Mikkelsen, Anders;
Head, Ashley R.;
Hjort, Martin;
Knudsen, Jan;
Urpelainen, Samuli

Publication type:

Article

Impact of Electronic States of Conical Shape of Indium Arsenide/Gallium Arsenide Semiconductor Quantum Dots.

Published in:

Applications & Applied Mathematics, 2021, v. 16, n. 2, p. 1029

By:

Fayz-Al-Asad, Md.;
Al-Rumman, Md.;
Alam, Md. Nur;
Parvin, Salma;
Tunç, Cemil

Publication type:

Article

Design and analysis of a new structure of InAs/GaAs QDIP for 8-12 μm infrared windows with low dark current.

Published in:

Journal of Modern Optics, 2009, v. 56, n. 15, p. 1704, doi. 10.1080/09500340903289144

By:

Mir, A.;
Ahmadi, V.

Publication type:

Article

Synthesis and Diameter-dependent Thermal Conductivity of InAs Nanowires.

Published in:

Nano-Micro Letters, 2014, v. 6, n. 4, p. 301, doi. 10.1007/s40820-014-0002-8

By:

Ren, Pinyun;
Zhu, Xiaoli;
Han, Jinyun;
Xu, Jinyou;
Ma, Liang;
Li, Honglai;
Zhuang, Xiujuan;
Zhou, Hong;
Zhang, Qinglin;
Xia, Minggang;
Pan, Anlian

Publication type:

Article

Development of a Method for Etching the InAs/InAsSbP Photodiode Heterostructures.

Published in:

Semiconductors, 2024, v. 58, n. 5, p. 445, doi. 10.1134/S1063782624050129

By:

Pivovarova, A. A.;
Vinskaya, N. D.;
Kunitsyna, E. V.;
Yakovlev, Yu. P.

Publication type:

Article

Gettering of Epitaxial Indium Arsenide by the Rare Earth Element Holmium.

Published in:

Semiconductors, 2023, v. 57, n. 3, p. 160, doi. 10.1134/S1063782623060118

By:

Kunitsyna, E. V.;
Parkhomenko, Ya. A.;
Pivovarova, A. A.;
Yakovlev, Yu. P.

Publication type:

Article

Effect of 'Al' concentration on spin-dependent resonant tunnelling in InAs/GaAlAs symmetrical double-barrier heterostructures.

Published in:

Bulletin of Materials Science, 2016, v. 39, n. 6, p. 1435, doi. 10.1007/s12034-016-1299-3

By:

CHANDRASEKAR, L;
GNANASEKAR, K;
KARUNAKARAN, M;
CHANDRAMOHAN, R

Publication type:

Article

InAs on Insulator: A New Platform for Cryogenic Hybrid Superconducting Electronics (Adv. Funct. Mater. 7/2025).

Published in:

Advanced Functional Materials, 2025, v. 35, n. 7, p. 1, doi. 10.1002/adfm.202570040

By:

Paghi, Alessandro;
Trupiano, Giacomo;
De Simoni, Giorgio;
Arif, Omer;
Sorba, Lucia;
Giazotto, Francesco

Publication type:

Article

Circuit quantum electrodynamics with a spin qubit.

Published in:

Nature, 2012, v. 490, n. 7420, p. 380, doi. 10.1038/nature11559

By:

Petersson, K. D.;
McFaul, L. W.;
Schroer, M. D.;
Jung, M.;
Taylor, J. M.;
Houck, A. A.;
Petta, J. R.

Publication type:

Article

Applied physics: Terahertz-wave detector.

Published in:: Nature, 2012, v. 486, n. 7403, p. 297, doi. 10.1038/486297b
Publication type:: Article

Applied physics: Nanowire electronics comes of age.

Published in:

Nature, 2012, v. 481, n. 7380, p. 152, doi. 10.1038/481152a

By:

Palacios, Tomás

Publication type:

Article

Quantum technology: Electrons spin in the field.

Published in:

Nature, 2010, v. 468, n. 7327, p. 1045, doi. 10.1038/4681045a

By:

Reilly, David J.

Publication type:

Article

Electronics: A diverse printed future.

Published in:

Nature, 2010, v. 468, n. 7321, p. 177, doi. 10.1038/468177a

By:

Rogers, John A.

Publication type:

Article

In situ XPS study of InAs oxidation in glow-discharge plasma.

Published in:

Journal of Structural Chemistry, 2011, v. 52, p. 153, doi. 10.1134/S0022476611070201

By:

Kesler, V.

Publication type:

Article

PL of low-density InAs/GaAs quantum dots with different bimodal populations.

Published in:

Micro & Nano Letters (Wiley-Blackwell), 2017, v. 12, n. 9, p. 599, doi. 10.1049/mnl.2016.0779

By:

Ying Wang;
Xinzhi Sheng;
Yao Liu;
Baolai Liang;
Xiaoli Li;
Qinglin Guo;
Mazur, Yuriy I.;
Ware, Morgan E.;
Salamo, Gregory J.

Publication type:

Article

Performance investigation of hetero material (InAs/Si)-based charge plasma TFET.

Published in:

Micro & Nano Letters (Wiley-Blackwell), 2017, v. 12, n. 6, p. 358, doi. 10.1049/mnl.2016.0688

By:

Yadav, Dharmendra Singh;
Sharma, Dheeraj;
Kumar, Ashish;
Rathor, Deepak;
Agrawal, Rahul;
Tirkey, Sukeshni;
Raad, Bhagwan Ram;
Bajaj, Varun

Publication type:

Article

Mit Tempo durch den Nanodraht.

Published in:: Elektronik Industrie, 2022, p. 66
Publication type:: Article

Defect Structure of Tin-Doped InAs Single Crystals Grown by the Czochralski Method.

Published in:

Crystallography Reports, 2022, v. 67, n. 7, p. 1095, doi. 10.1134/S1063774522070483

By:

Sanjarovskii, N. A.;
Parfenteva, I. B.;
Yugova, T. G.;
Knyazev, S. N.

Publication type:

Article

Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well.

Published in:

Crystallography Reports, 2014, v. 59, n. 6, p. 900, doi. 10.1134/S1063774514060108

By:

Galiev, G.;
Vasiliev, A.;
Imamov, R.;
Klimov, E.;
Maltsev, P.;
Pushkarev, S.;
Presniakov, M.;
Trunkin, I.

Publication type:

Article

Structural and electrical properties of metamorphic nanoheterostructures with a high InAs content (37-100%) grown on GaAs and InP substrates.

Published in:

Crystallography Reports, 2011, v. 56, n. 5, p. 875, doi. 10.1134/S1063774511050105

By:

Galiev, G.;
Vasil'evskii, I.;
Imamov, R.;
Klimov, E.;
Pushkarev, S.;
Subbotin, I.

Publication type:

Article

Interface reconstruction in the GaSe/GaAs(100) and InSe/InAs(100) nanoheterostructures.

Published in:

Crystallography Reports, 2011, v. 56, n. 3, p. 526, doi. 10.1134/S1063774510061021

By:

Bezryadin, N.;
Kotov, G.;
Kuzubov, S.;
Boldyreva, Ya.;
Agapov, B.

Publication type:

Article

Transient behaviour of quantum-dot saturable absorber mirrors at varying excitation fluence.

Published in:

Applied Physics B: Lasers & Optics, 2014, v. 116, n. 4, p. 919, doi. 10.1007/s00340-014-5778-1

By:

Meiser, Niels;
Marcinkevicius, Saulius;
Pasiskevicius, Valdas

Publication type:

Article

AlGaInAs multiple-quantum-well 1.2-μm semiconductor laser in-well pumped by an Yb-doped pulsed fiber amplifier.

Published in:

Applied Physics B: Lasers & Optics, 2012, v. 106, n. 1, p. 57, doi. 10.1007/s00340-011-4669-y

By:

Chen, Y.-F.;
Lee, Y.;
Huang, S.;
Huang, K.;
Chen, Y.

Publication type:

Article

High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers.

Published in:

Applied Physics B: Lasers & Optics, 2011, v. 103, n. 3, p. 609, doi. 10.1007/s00340-010-4290-5

By:

Nikitichev, D.;
Ding, Y.;
Ruiz, M.;
Calligaro, M.;
Michel, N.;
Krakowski, M.;
Krestnikov, I.;
Livshits, D.;
Cataluna, M.;
Rafailov, E.

Publication type:

Article

Two-dimensional array of room-temperature nanophotonic logic gates using InAs quantum dots in mesa structures.

Published in:

Applied Physics B: Lasers & Optics, 2011, v. 103, n. 3, p. 537, doi. 10.1007/s00340-011-4375-9

By:

Kawazoe, T.;
Ohtsu, M.;
Aso, S.;
Sawado, Y.;
Hosoda, Y.;
Yoshizawa, K.;
Akahane, K.;
Yamamoto, N.;
Naruse, M.

Publication type:

Article

Vertical integration of ultrafast semiconductor lasers.

Published in:

Applied Physics B: Lasers & Optics, 2007, v. 88, n. 4, p. 493, doi. 10.1007/s00340-007-2760-1

By:

Maas, D. J. H. C.;
Bellancourt, A.-R.;
Rudin, B.;
Golling, M.;
Unold, H. J.;
Südmeyer, T.;
Keller, U.

Publication type:

Article

OPTICAL FEATURES OF InAs QUANTUM DOTS-IN-A-WELL STRUCTURES.

Published in:

Lithuanian Journal of Physics, 2014, v. 54, n. 1, p. 54, doi. 10.3952/lithjphys.54113

By:

Nedzinskas, R.;
Čechavičius, B.;
Rimkus, A.;
Kavaliauskas, J.;
Valušis, G.;
Li, L. H.;
Linfield, E. H.

Publication type:

Article

A FIRST PRINCIPLE STUDY OF ELECTRONIC AND STRUCTURAL PROPERTIES OF INDIUM ARSENIDE(INAS).

Published in:

Bulletin of Pure & Applied Sciences-Physics, 2013, v. 32D, n. 2, p. 1

By:

Joshi, Vrishali

Publication type:

Article