Works matching DE "INDIUM arsenide"

Results: 343

Influence of photoexcited and thermal electrons and holes on generation of THz radiation in InAs in magnetic field.

Published in:

Applied Physics B: Lasers & Optics, 2025, v. 131, n. 7, p. 1, doi. 10.1007/s00340-025-08497-w

By:

Grishkov, Vyacheslav E.;
Uryupin, Sergey A.

Publication type:

Article

Design and development of graphene-based hexagon-plus shaped wideband solar absorber for industrial heating systems.

Published in:

Applied Physics A: Materials Science & Processing, 2025, v. 131, n. 7, p. 1, doi. 10.1007/s00339-025-08689-3

By:

Alsharari, Meshari;
Han, Bo Bo;
Patel, Shobhit K.;
Aliqab, Khaled;
Armghan, Ammar

Publication type:

Article

FORMATION OF SEMICONDUCTOR QUANTUM DOTS IN THE SUBCRITICAL THICKNESS RANGE.

Published in:

International Journal of Nanoscience, 2007, v. 6, n. 5, p. 339, doi. 10.1142/S0219581X07004900

By:

ALEXANDER, TONKIKH;
DUBROVSKII, VLADIMIR;
MUSIKHIN, YURII;
USTINOV, VICTOR;
CIRLIN, GEORGE;
POLYAKOV, NIKOLAY;
SAMSONENKO, YURII;
WERNER, PETER

Publication type:

Article

GROUND AND EXCITED STATE PHOTOLUMINESCENCE MAPPING ON InAs/InGaAs QUANTUM DOT STRUCTURES.

Published in:

International Journal of Nanoscience, 2007, v. 6, n. 5, p. 383, doi. 10.1142/S0219581X07004912

By:

TORCHYNSKA, T. V.;
LOZADA, E. VELÁZQUEZ;
DYBIEC, M.;
OSTAPENKO, S.;
ELISEEV, P. G.;
STINTZ, A.;
MALLOY, K. J.;
SIERRA, R. PENA

Publication type:

Article

POLARIZED PHOTOLUMINESCENCE OF EXCITONS IN n-, p- AND UNDOPED InAs/GaAs QUANTUM DOTS.

Published in:

International Journal of Nanoscience, 2007, v. 6, n. 5, p. 319

By:

FÜRST, J.;
PASCHER, H.;
SHALYGIN, V. A.;
VOROBJEV, L. E.;
FIRSOV, D. A.;
TONKIKH, A. A.;
POLYAKOV, N. K.;
SAMSONENKO, YU. B.;
CIRLIN, G. E.;
USTINOV, V. M.

Publication type:

Article

LATERAL INTERSUBBAND PHOTOCURRENT STUDY ON InAs/InAlAs/InP SELF-ASSEMBLED NANOSTRUCTURES.

Published in:

International Journal of Nanoscience, 2006, v. 5, n. 6, p. 729, doi. 10.1142/S0219581X06005066

By:

LEI, W.;
CHEN, Y. H.;
JIN, P.;
XU, B.;
YE, X. L.;
WANG, Z. G.;
HUANG, X. Q.

Publication type:

Article

OPTICAL AND ELECTRICAL INVESTIGATION OF LOW DIMENSIONAL SELF-ASSEMBLED InAs QUANTUM DOT FIELD EFFECT TRANSISTORS.

Published in:

International Journal of Nanoscience, 2006, v. 5, n. 6, p. 721, doi. 10.1142/S0219581X06005054

By:

YUXIN ZENG;
WEI LIU;
FUHUA YANG;
PING XU;
PINGHENG TAN;
HOUZHI ZHENG;
YIPING ZENG;
YINGJIE XING;
DAPENG YU

Publication type:

Article

TUNING OF EMISSION WAVELENGTH OF InAs/GaAs QUANTUM DOTS SANDWICHED BY COMBINATION LAYERS.

Published in:

International Journal of Nanoscience, 2006, v. 5, n. 6, p. 847, doi. 10.1142/S0219581X0600525X

By:

ZHIDAN FANG;
ZHENG GONG;
ZHENHUA MIAO;
ZHICHUAN NIU

Publication type:

Article

SURFACE MORPHOLOGY EVOLUTION OF STRAINED InAs/GaAs(331)A FILMS.

Published in:

International Journal of Nanoscience, 2006, v. 5, n. 6, p. 883, doi. 10.1142/S0219581X06005315

By:

ZHENG GONG;
ZHIDAN FANG;
ZHENHUA MIAO;
ZHICHUAN NIU

Publication type:

Article

ELECTRON AND HOLE EFFECTIVE g FACTORS IN InAs/GaSb QUANTUM WELLS.

Published in:

International Journal of Nanoscience, 2003, v. 2, n. 6, p. 437, doi. 10.1142/S0219581X0300153X

By:

Zakharova, A.;
Yen, S.T.;
Chao, K.A.

Publication type:

Article

Negative photoinduced current and negative differential characteristics of new optoelectronic sensors with InAs/GaAs nanostructure for visual recognition.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 125, doi. 10.1007/s10854-007-9308-3

By:

Matsui, Y.;
Miyoshi, Y.

Publication type:

Article

Performance of a Double Gate Nanoscale MOSFET (DG-MOSFET) Based on Novel Channel Materials.

Published in:

Journal of Nano- & Electronic Physics, 2013, v. 5, n. 1, p. 01017-1

By:

Prasher, Rakesh;
Dass, Devi;
Vaid, Rakesh

Publication type:

Article

Demonstration of HOT photoresponse of MWIR T2SLs InAs/InAsSb photoresistors.

Published in:

Bulletin of the Polish Academy of Sciences: Technical Sciences, 2019, v. 67, n. 1, p. 141, doi. 10.24425/bpas.2019.127343

By:

MICHALCZEWSKI, K.;
TSAI, T. Y.;
MARTYNIUK, P.;
WU, C. H.

Publication type:

Article

Mid-wave InAs/GaSb superlattice barrier infrared detectors with nBnN and pBnN design.

Published in:

Bulletin of the Polish Academy of Sciences: Technical Sciences, 2018, v. 66, n. 3, p. 317, doi. 10.24425/123438

By:

GOMÓŁKA, E.;
MARKOWSKA, O.;
KOPYTKO, M.;
KOWALEWSKI, A.;
MARTYNIUK, P.;
ROGALSKI, A.;
RUTKOWSKI, J.;
MOTYKA, M.;
KRISHNA, S.

Publication type:

Article

Effects of ionized impurity and interface roughness scatterings on the electron mobility in InAs/GaSb type II superlattices at low temperatures.

Published in:

Modern Physics Letters B, 2016, v. 30, n. 32/33, p. -1, doi. 10.1142/S021798491650384X

By:

Safa, S.;
Asgari, A.

Publication type:

Article

Study of surface-enhanced Raman scattering of InAs particles of subwavelength apertures at terahertz frequencies.

Published in:

Modern Physics Letters B, 2015, v. 29, n. 31, p. -1, doi. 10.1142/S0217984915501973

By:

Liu, Ying;
Ren, Guangjun;
Du, Rongjian;
Zhang, Yongming;
Tan, Tianbo;
Wang, Yaqi;
Yao, Jianquan

Publication type:

Article

Polarization-insensitive magnetically tunable perfect absorber for refractive index sensing applications.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2024, v. 38, n. 29, p. 1, doi. 10.1142/S0217979224503995

By:

Niharika, Neha;
Singh, Sangeeta

Publication type:

Article

Erratum: 'Thermal transfer and interaction mechanisms of localized excitons in families of InAs quantum dashes grown on InP(001) vicinal substrate emitting near 1.55 m wavelength'.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2016, v. 30, n. 27, p. 1, doi. 10.1142/S021797921692003X

By:

Besahraoui, Fatiha;
Bouslama, M'hamed;
Bouzaiene, Lotfi;
Saidi, Faouzi;
Maaref, Hassen;
Gendry, Michel

Publication type:

Article

Thermal transfer and interaction mechanisms of localized excitons in families of InAs quantum dashes grown on InP(001) vicinal substrate emitting near 1.55 m wavelength.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2016, v. 30, n. 21, p. -1, doi. 10.1142/S0217979216501459

By:

Besahraoui, Fatiha;
Bouslama, M'Hamed;
Bouzaiene, Lotfi;
Saidi, Faouzi;
Maaref, Hassen;
Gendry, Michel

Publication type:

Article

MULTI-COLOR, BROADBAND QUANTUM WELL INFRARED PHOTODETECTORS FOR MID-, LONG-, AND VERY LONG-WAVELENGTH INFRARED APPLICATIONS.

Published in:

International Journal of High Speed Electronics & Systems, 2002, v. 12, n. 3, p. 761

By:

Li, S.S.

Publication type:

Article

Main scattering mechanisms in InAs/GaAs multi-quantum-well: a new approach by the global optimization method.

Published in:

Journal of Materials Science, 2016, v. 51, n. 3, p. 1333, doi. 10.1007/s10853-015-9451-9

By:

Oliveira, A.;
Rubinger, R.;
Monteiro, H.;
Rubinger, C.;
Ribeiro, G.

Publication type:

Article

Theoretical prediction of structural parameters, band-gap energies, and mixing enthalpies of ScInAs alloys.

Published in:

Journal of Materials Science, 2013, v. 48, n. 14, p. 4899, doi. 10.1007/s10853-013-7270-4

By:

López-Pérez, William;
Simon-Olivera, Nicolás;
González-Hernández, Rafael

Publication type:

Article

Synthesis, elaboration and characterization of the new material CuIn<sub>3</sub>S<sub>5</sub> thin films.

Published in:

Journal of Materials Science, 2009, v. 44, n. 17, p. 4743, doi. 10.1007/s10853-009-3741-z

By:

Khémiri, N.;
Kanzari, M.

Publication type:

Article

The electronic band structure of InN, InAs and InSb compounds.

Published in:

Journal of Materials Science, 2008, v. 43, n. 8, p. 2935, doi. 10.1007/s10853-007-1794-4

By:

Mohammad, Rezek;
Katırcıoğlu, Şenay;
El-Hasan, Musa

Publication type:

Article

Solid-state physics: Join the dots.

Published in:

Nature, 2008, v. 451, n. 7176, p. 256, doi. 10.1038/451256a

By:

Khitrova, Galina;
Gibbs, H. M.

Publication type:

Article

InAs-based quantum cascade lasers emitting close to 25 μm.

Published in:

Electronics Letters (Wiley-Blackwell), 2019, v. 55, n. 3, p. 144, doi. 10.1049/el.2018.6413

By:

Loghmari, Z.;
Bahriz, M.;
Meguekam, A.;
Teissier, R.;
Baranov, A. N.

Publication type:

Article

InAs/GaAs quantum dot infrared hotodetectors on on-axis i (100) substrates.

Published in:

Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 24, p. 1395, doi. 10.1049/el.2018.7118

By:

Yoshikawa, H.;
Kwoen, J.;
Doe, T.;
Izumi, M.;
Iwamoto, S.;
Arakawa, Y.

Publication type:

Article

Gallium, Indium, and Arsenic Pollution of Groundwater from a Semiconductor Manufacturing Area of Taiwan.

Published in:

Bulletin of Environmental Contamination & Toxicology, 2006, v. 77, n. 2, p. 289, doi. 10.1007/s00128-006-1062-3

By:

Chen, H.-W.

Publication type:

Article

Experimental Study and Simulation of the Spectral Characteristics of LED Heterostructures with an InAs Active Region.

Published in:

Technical Physics Letters, 2020, v. 46, n. 2, p. 150, doi. 10.1134/S1063785020020121

By:

Semakova, A. A.;
Lipnitskaya, S. N.;
Mynbaev, K. D.;
Bazhenov, N. L.;
Kizhaev, S. S.;
Chernyaev, A. V.;
Stoyanov, N. D.;
Lipsanen, H.

Publication type:

Article

Pnictide-based colloidal quantum dots for infrared sensing applications.

Published in:

Nano Convergence, 2025, v. 12, n. 1, p. 1, doi. 10.1186/s40580-025-00489-y

By:

Seo, Jaeyoung;
Kim, Seongchan;
Yeo, Dongjoon;
Gwak, Namyoung;
Oh, Nuri

Publication type:

Article

High electron mobility in strained GaAs nanowires.

Published in:

Nature Communications, 2021, v. 12, n. 1, p. 1, doi. 10.1038/s41467-021-27006-z

By:

Balaghi, Leila;
Shan, Si;
Fotev, Ivan;
Moebus, Finn;
Rana, Rakesh;
Venanzi, Tommaso;
Hübner, René;
Mikolajick, Thomas;
Schneider, Harald;
Helm, Manfred;
Pashkin, Alexej;
Dimakis, Emmanouil

Publication type:

Article

Contribution of Series Resistance in Modelling of High-Temperature Type II Superlattice p-i-n Photodiodes.

Published in:

Advances in Optical Technologies, 2012, p. 1, doi. 10.1155/2012/926365

By:

Wróbel, Jarosław;
Martyniuk, Piotr;
Rogalski, Antoni

Publication type:

Article

Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy.

Published in:

Nanoscale Research Letters, 2018, v. 13, n. 1, p. 1, doi. 10.1186/s11671-018-2612-4

By:

Benyahia, D.;
Kubiszyn, Ł.;
Michalczewski, K.;
Boguski, J.;
Kębłowski, A.;
Martyniuk, P.;
Piotrowski, J.;
Rogalski, A.

Publication type:

Article

Photovoltaic Performance of a Nanowire/Quantum Dot Hybrid Nanostructure Array Solar Cell.

Published in:

Nanoscale Research Letters, 2018, v. 13, n. 1, p. 1, doi. 10.1186/s11671-018-2478-5

By:

Yao Wu;
Xin Yan;
Xia Zhang;
Xiaomin Ren

Publication type:

Article

Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers.

Published in:

Nanoscale Research Letters, 2018, v. 13, n. 1, p. 1, doi. 10.1186/s11671-018-2472-y

By:

Xiang-Bin Su;
Ying Ding;
Ben Ma;
Ke-Lu Zhang;
Ze-Sheng Chen;
Jing-Lun Li;
Xiao-Ran Cui;
Ying-Qiang Xu;
Hai-Qiao Ni;
Zhi-Chuan Niu

Publication type:

Article

The Investigation of Gyroelectric n-InAs Phase Shifters Characteristics.

Published in:

Electronics & Electrical Engineering, 2012, n. 122, p. 121

By:

Malisauskas, V.;
Plonis, D.

Publication type:

Article

Influence of Surface Passivation on Indium Arsenide Nanowire Band Gap Energies.

Published in:

Journal of Electronic Materials, 2019, v. 48, n. 10, p. 6654, doi. 10.1007/s11664-019-07476-0

By:

Razavi, Pedram;
Greer, James C.

Publication type:

Article

Influence of Molecular Beam Epitaxy (MBE) Parameters on Catalyst-Free Growth of InAs Nanowires on Silicon (111) Substrate.

Published in:

Journal of Electronic Materials, 2019, v. 48, n. 4, p. 2174, doi. 10.1007/s11664-019-07037-5

By:

Jangir, Suresh K.;
Malik, Hitendra K.;
Kumar, Anand;
Sridhar Rao, D. V.;
Muralidharan, R.;
Mishra, Puspashree

Publication type:

Article

Transport Properties in InAs Thin Films with Different Degrees of Disorder Near the Metal-Insulator Transition.

Published in:

Journal of Electronic Materials, 2019, v. 48, n. 1, p. 679, doi. 10.1007/s11664-018-6783-7

By:

Yao, Yanping;
Bo, Baoxue;
Liu, Chunling

Publication type:

Article

Second-Harmonic Generation in Vertically Coupled InAs/GaAs Quantum Dots with a Gaussian Potential Distribution: Combined Effects of Electromagnetic Fields, Pressure, and Temperature.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 8, p. 2792, doi. 10.1007/s11664-015-3760-2

By:

Ben Mahrsia, R.;
Choubani, M.;
Bouzaiene, L.;
Maaref, H.

Publication type:

Article

Modeling InAs/GaSb and InAs/InAsSb Superlattice Infrared Detectors.

Published in:

Journal of Electronic Materials, 2014, v. 43, n. 8, p. 2984, doi. 10.1007/s11664-014-3169-3

By:

Klipstein, P.;
Livneh, Y.;
Glozman, A.;
Grossman, S.;
Klin, O.;
Snapi, N.;
Weiss, E.

Publication type:

Article

Investigation of Trap States in Mid-Wavelength Infrared Type II Superlattices Using Time-Resolved Photoluminescence.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3203, doi. 10.1007/s11664-013-2759-9

By:

Connelly, Blair;
Metcalfe, Grace;
Shen, Hongen;
Wraback, Michael;
Canedy, Chadwick;
Vurgaftman, Igor;
Melinger, Joseph;
Affouda, Chaffra;
Jackson, Eric;
Nolde, Jill;
Meyer, Jerry;
Aifer, Edward

Publication type:

Article

Numerical Simulation and Analytical Modeling of InAs nBn Infrared Detectors with p-Type Barriers.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3015, doi. 10.1007/s11664-013-2685-x

By:

Reine, Marion;
Schuster, Jonathan;
Pinkie, Benjamin;
Bellotti, Enrico

Publication type:

Article

Measurement of Thermoelectric Properties of Single Semiconductor Nanowires.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 7, p. 2409, doi. 10.1007/s11664-012-2409-7

By:

Karg, S.;
Mensch, P.;
Gotsmann, B.;
Schmid, H.;
Kanungo, P.;
Ghoneim, H.;
Schmidt, V.;
Björk, M.;
Troncale, V.;
Riel, H.

Publication type:

Article

Dark Current and Noise Measurements of an InAs/GaSb Superlattice Photodiode Operating in the Midwave Infrared Domain.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2714, doi. 10.1007/s11664-012-2035-4

By:

Cervera, C.;
Ribet-Mohamed, I.;
Taalat, R.;
Perez, J.P.;
Christol, P.;
Rodriguez, J.B.

Publication type:

Article

Electrooptical Characterization of MWIR InAsSb Detectors.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2671, doi. 10.1007/s11664-012-2182-7

By:

D'Souza, A.I.;
Robinson, E.;
Ionescu, A.C.;
Okerlund, D.;
Lyon, T.J.;
Sharifi, H.;
Roebuck, M.;
Yap, D.;
Rajavel, R.D.;
Dhar, N.;
Wijewarnasuriya, P.S.;
Grein, C.

Publication type:

Article

I- V and Differential Conduction Characteristics of an AlGaAs/GaAs Lateral Quantum Dot Infrared Photodetector.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2679, doi. 10.1007/s11664-012-2187-2

By:

Guidry, D.H.;
Morath, C.P.;
Cowan, V.M.;
Cardimona, D.A.

Publication type:

Article

Thermal Conductivity of InAs/GaSb Type II Superlattice.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 9, p. 2322, doi. 10.1007/s11664-012-2146-y

By:

Zhou, Chuanle;
Nguyen, B.;
Razeghi, M.;
Grayson, M.

Publication type:

Article

In Situ Spectral Reflectance Investigation of InAs/GaAs Heterostructures Grown by MOVPE.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 3, p. 498, doi. 10.1007/s11664-011-1809-4

By:

Massoudi, I.;
Habchi, M.M.;
Rebey, A.;
El Jani, B.

Publication type:

Article

Performance Comparison of Long-Wavelength Infrared Type II Superlattice Devices with HgCdTe.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 8, p. 1815, doi. 10.1007/s11664-011-1653-6

By:

Rhiger, David

Publication type:

Article