Works matching DE "INDIUM antimonide crystals"

Results: 50

Noise spectroscopy as a method of monitoring the quality of developed semiconductor devices.

Published in:

Measurement Techniques, 2011, v. 54, n. 6, p. 712, doi. 10.1007/s11018-011-9792-y

By:

Miroshnikova, I.;
Astakhov, V.;
Zenova, E.;
Tagachenkov, A.;
Rachnikov, D.

Publication type:

Article

Chemical interaction of InAs, InSb, GaAs, and GaSb crystals with aqueous (NH)CrO-HBr solutions.

Published in:

Inorganic Materials, 2017, v. 53, n. 8, p. 781, doi. 10.1134/S0020168517080106

By:

Levchenko, I.;
Stratiychuk, I.;
Tomashyk, V.;
Malanych, G.;
Stanetskaya, A.

Publication type:

Article

Dislocations in manganese-doped InSb.

Published in:

Inorganic Materials, 2012, v. 48, n. 10, p. 977, doi. 10.1134/S0020168512100093

By:

Sanygin, V.;
Filatov, A.;
Izotov, A.;
Pashkova, O.

Publication type:

Article

GaInBiAsSb/InSb and InBiAsSb/InSb heterostructures grown in a temperature gradient.

Published in:

Inorganic Materials, 2012, v. 48, n. 9, p. 877, doi. 10.1134/S0020168512090154

By:

Sinel'nikov, B.;
Lunina, M.

Publication type:

Article

Interaction of indium antimonide with saturated sulfur vapor.

Published in:

Doklady Chemistry, 2016, v. 471, n. 2, p. 365, doi. 10.1134/S0012500816120077

By:

Syrov, Yu.

Publication type:

Article

Investigation of fast processes in condensed matter by time-resolved x-ray diffraction.

Published in:

Applied Physics A: Materials Science & Processing, 2009, v. 96, n. 1, p. 91, doi. 10.1007/s00339-009-5187-1

By:

Uschmann, I.;
Kämpfer, T.;
Zamponi, F.;
Lübcke, A.;
Zastrau, U.;
Loetzsch, R.;
Höfer, S.;
Morak, A.;
Förster, E.

Publication type:

Article

Magnetic properties of the half-metallic ferromagnet NiMnSb grown on InSb by pulsed laser deposition.

Published in:

Applied Physics A: Materials Science & Processing, 2004, v. 79, n. 4-6, p. 1211, doi. 10.1007/s00339-004-2720-0

By:

Androulakis, J.;
Gardelis, S.;
Giapintzakis, J.;
Buckle, P. D.

Publication type:

Article

Evidence for the existence of an unusual structure in the nanorods of InSb.

Published in:

Applied Physics A: Materials Science & Processing, 2003, v. 76, n. 2, p. 133, doi. 10.1007/s00339-002-1444-2

By:

Yousuf, M.;
Qadri, S.B.;
Skelton, E.F.

Publication type:

Article

Picosecond X-ray diffraction studies of laser-excited acoustic phonons in InSb.

Published in:

Applied Physics A: Materials Science & Processing, 2002, v. 75, n. 4, p. 467, doi. 10.1007/s003390201421

By:

Larsson, J.;
Allen, A.;
Bucksbaum, P.H.;
Falcone, R.W.;
Lindenberg, A.;
Naylor, G.;
Missalla, T.;
Reis, D.A.;
Scheidt, K.;
Sjögren, A.;
Sondhauss, P.;
Wulff, M.;
Wark, J.S.

Publication type:

Article

Influence of resonant tunneling on the imaging of atomic defects on InAs(110) surfaces by low-temperature scanning tunneling microscopy.

Published in:

Applied Physics A: Materials Science & Processing, 1998, v. 66, n. 7, p. S171, doi. 10.1007/s003390051124

By:

Depuydt, A.;
Maslova, N.S.;
Panov, V.I.;
Rakov, V.V.;
Savinov, S.V.;
Van Haesendonck, C.

Publication type:

Article

Complex structure of optical transitions from the core d-levels of InAs and InSb crystals.

Published in:

Semiconductors, 2017, v. 51, n. 8, p. 1034, doi. 10.1134/S1063782617080309

By:

Sobolev, V.;
Perevoshchikov, D.

Publication type:

Article

Effect of spin-orbit interaction on the electronic structure of indium-antimonide d bands.

Published in:

Semiconductors, 2015, v. 49, n. 5, p. 570, doi. 10.1134/S1063782615050255

By:

Sobolev, V.;
Perevoshchikov, D.

Publication type:

Article

On statistically distributed inhomogeneities according to data on transverse magnetoresistance for the case of atmospheric and uniform pressure in narrow-gap n-InSb and n-CdSnAs semiconductors.

Published in:

Semiconductors, 2014, v. 48, n. 7, p. 839, doi. 10.1134/S1063782614070069

By:

Gadjialiev, M.;
Daunov, M.;
Kamilov, I.;
Musaev, A.

Publication type:

Article

Autosolitons in low-resistivity indium antimonide and tellurium single crystals in a magnetic field.

Published in:

Semiconductors, 2012, v. 46, n. 7, p. 894, doi. 10.1134/S106378261207010X

By:

Kamilov, I.;
Stepurenko, A.;
Gummetov, A.

Publication type:

Article

Radiative recombination of hot carriers in narrow-gap semiconductors.

Published in:

Semiconductors, 2012, v. 46, n. 1, p. 29, doi. 10.1134/S1063782612010162

By:

Pavlov, N.;
Zegrya, G.

Publication type:

Article

Electrical Properties and Limiting Position of the Fermi Level in InSb Irradiated with Protons.

Published in:

Semiconductors, 2004, v. 38, n. 7, p. 769, doi. 10.1134/1.1777597

By:

Brudny&icaron;, V.N.;
Bo&icaron;ko, V.M.;
Kamenskaya, I.V.;
Kolin, N.G.

Publication type:

Article

Localization of a Longitudinal Autosoliton in InSb.

Published in:

Semiconductors, 2004, v. 38, n. 7, p. 788, doi. 10.1134/1.1777601

By:

Kamilov, I.K.;
Stepurenko, A.A.;
Kovalev, A.S.

Publication type:

Article

Temperature Dependence of Thermoelectric Power in n-InSb in a Transverse Quantizing Magnetic Field.

Published in:

Semiconductors, 2002, v. 36, n. 3, p. 263, doi. 10.1134/1.1461399

By:

Gadzhialiev, M. M.

Publication type:

Article

Thermoelectric Power of the n-InSb in a Transverse Quantizing Magnetic Field at a Large Temperature Gradient.

Published in:

Semiconductors, 2000, v. 34, n. 5, p. 525, doi. 10.1134/1.1188020

By:

Gadzhialiev, M. M.

Publication type:

Article

Electrical properties of nuclear-doped indium antimonide.

Published in:

Semiconductors, 1999, v. 33, n. 7, p. 712, doi. 10.1134/1.1187766

By:

Kolin, N. G.;
Merkurisov, D. I.;
Solov’ev, S. P.

Publication type:

Article

Electrical properties of InSb irradiated with fast neutrons from a nuclear reactor.

Published in:

Semiconductors, 1999, v. 33, n. 8, p. 847, doi. 10.1134/1.1187795

By:

Kolin, N. G.;
Merkurisov, D. I.;
Solov’ev, S. P.

Publication type:

Article

Erratum: Autosolitons in InSb in a magnetic field [Semiconductors 32, 625–628 (June 1988)].

Published in:

1998

By:

Kamilov, I. K.;
Stepurenko, A. A.;
Kovalev, A. S.

Publication type:

Correction Notice

MTF Issues in Small-Pixel-Pitch Planar Quantum IR Detectors.

Published in:

Journal of Electronic Materials, 2014, v. 43, n. 8, p. 3025, doi. 10.1007/s11664-014-3185-3

By:

Gravrand, O.;
Baier, N.;
Ferron, A.;
Rochette, F.;
Berthoz, J.;
Rubaldo, L.;
Cluzel, R.

Publication type:

Article

Helium-Plasma-Prepared (111)A HgCdTe and (211)B InSb.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 2, p. 152, doi. 10.1007/s11664-007-0309-z

By:

Martinka, Michael;
Jaime-Vasquez, Marvin;
Stoltz, Andrew J.;
Almeida, Leo A.;
Benson, James D.;
Varesi, John B.;
Markunas, J. K.

Publication type:

Article

Finite Element Analysis of Millimeter and Sub-Millimeter Wave Gyroelectric Waveguide Components.

Published in:

Electromagnetics, 2006, v. 26, n. 6, p. 405, doi. 10.1080/02726340600837875

By:

Tio, LianYuh;
Gibson, AndrewA. P.;
Dillon, BerniceM.;
Davis, LionelE.

Publication type:

Article

Thermal buckling analysis in InSb focal plane arrays detector.

Published in:

Journal of Mechanical Science & Technology, 2013, v. 27, n. 6, p. 1809, doi. 10.1007/s12206-013-0502-3

By:

Zhang, Xiaoling;
Meng, Qingduan;
Yu, Qian;
Zhang, Liwen;
Lv, Yanqiu

Publication type:

Article

Effects of absorption layer characteristic on spectral photoresponse of mid-wavelength InSb photodiodes.

Published in:

Optical & Quantum Electronics, 2011, v. 42, n. 11-13, p. 801, doi. 10.1007/s11082-011-9488-1

By:

Hu, W.;
Chen, X.;
Ye, Z.;
Meng, C.;
Lv, Y.;
Lu, W.

Publication type:

Article

Electron and phonon dynamics in indium antimonide crystals.

Published in:

Optical & Quantum Electronics, 2008, v. 40, n. 2-4, p. 249, doi. 10.1007/s11082-007-9152-y

By:

Brazis, Romuald;
Raguotis, Romas

Publication type:

Article

Acoustoelectric Attenuation and Phase Transition Due to Carriers in Semiconductor.

Published in:

International Transactions in Applied Sciences, 2011, v. 3, n. 4, p. 835

By:

Kumar, Praveen;
Kri., Amita;
Alok, Ujjwal

Publication type:

Article

Study of annealing effects in In-Sb bilayer thin films.

Published in:

Bulletin of Materials Science, 2007, v. 30, n. 2, p. 117, doi. 10.1007/s12034-007-0021-x

By:

Mangal, R. K.;
Vijay, Y. K.

Publication type:

Article

Influence of Microaccelerations on the Impurity Distribution in the InSb:Te Crystals Grown in Orbital Flights by the Method of Floating Zone Melting.

Published in:

Cosmic Research, 2004, v. 42, n. 2, p. 148, doi. 10.1023/B:COSM.0000025978.52989.58

By:

Boguslavskii, A. A.;
Sazonov, V. V.;
Sokolov, S. M.;
Zemskov, V. S.;
Raukhman, M. R.;
Shalimov, V. P.

Publication type:

Article

Low temperature Hall effect studies of InSb thin films grown by flash evaporation.

Published in:

European Physical Journal - Applied Physics, 2011, v. 54, n. 1, p. N.PAG, doi. 10.1051/epjap/2011100484

By:

Sumesh, C. K.;
Patel, K. D.;
Solanki, G. K.;
Pathak, V. M.;
Srivastav, R.

Publication type:

Article

The composition and structure of interphase boundaries of III-V semiconductors formed in a liquid medium.

Published in:

Russian Physics Journal, 2012, v. 54, n. 12, p. 1375, doi. 10.1007/s11182-012-9757-x

By:

Zarubina, O.;
Mokrousov, G.;
Naiden, E.

Publication type:

Article

Scattering of current carriers with spin flipping in indium antimonide.

Published in:

Russian Physics Journal, 2007, v. 50, n. 9, p. 955, doi. 10.1007/s11182-007-0138-9

By:

Gadzhialiev, M.;
Pirmagomedov, Z.

Publication type:

Article

Change in the structural state of III–V semiconductor compounds under mechanical stresses.

Published in:

Russian Physics Journal, 2005, v. 48, n. 10, p. 1095, doi. 10.1007/s11182-006-0030-z

By:

Davydov, V. N.;
Belyaev, S. V.;
Kokhlov, A. L.

Publication type:

Article

Thermoelectromotive Force of the Corbino Disk in a Quantizing Magnetic Field.

Published in:

Russian Physics Journal, 2005, v. 48, n. 3, p. 328, doi. 10.1007/s11182-005-0128-8

By:

Ataev, A.;
Gadzhialiev, M.

Publication type:

Article

Optical and Structural Properties of Silicon with Ion-Beam Synthesized InSb Nanocrystals.

Published in:

Journal of Applied Spectroscopy, 2017, v. 83, n. 6, p. 959, doi. 10.1007/s10812-017-0390-x

By:

Komarov, F.;
Romanov, I.;
Vlasukova, L.;
Milchanin, O.;
Parkhomenko, I.;
Kovaleva, T.;
Korolik, O.;
Mudryi, A.;
Wendler, E.

Publication type:

Article

Trap-assisted conductivity in anodic oxide on InSb.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 4, p. 470, doi. 10.15407/spqeo20.04.470

By:

Beketov, G. V.;
Sukach, A. V.;
Tetyorkin, V. V.;
Trotsenko, S. P.

Publication type:

Article

Synthesis and properties of semiconductor solid solutions (InSb)<sub>1-x</sub>(CdTe)<sub>x</sub>.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 2, p. 80, doi. 10.15407/spqeo9.02.080

By:

Venger, E. F.;
Knorozok, L. M.;
Melnichuk, L. Yu.;
Melnichuk, O. V.

Publication type:

Article

Photoelectric characteristics of focal plane arrays based on epitaxial layers of indium antimonide deposited on a heavily doped substrate.

Published in:

Journal of Communications Technology & Electronics, 2017, v. 62, n. 3, p. 309, doi. 10.1134/S1064226917030068

By:

Burlakov, I.;
Boltar, K.;
Vlasov, P.;
Lopukhin, A.;
Toropov, A.;
Zhuravlev, K.;
Fadeev, V.

Publication type:

Article

Independent operation time of photodetectors of the (3-5)-μm spectral band based on InSb and CdHgTe heteroepitaxial structures.

Published in:

Journal of Communications Technology & Electronics, 2017, v. 62, n. 3, p. 326, doi. 10.1134/S106422691703010X

By:

Filatov, A.;
Susov, E.;
Karpov, V.;
Zhilkin, V.;
Ljubchenko, S.;
Kusnezov, N.;
Marushchenko, A.

Publication type:

Article

Megapixel digital InSb detector for midwave infrared imaging.

Published in:

Optical Engineering, 2011, v. 50, n. 6, p. 061008, doi. 10.1117/1.3572163

By:

Shkedy, Lior;
Markovitz, Tuvy;
Calahorra, Zipora;
Hirsh, Itay;
Shtrichman, Itay

Publication type:

Article

Indium antimonide large-format detector arrays.

Published in:

Optical Engineering, 2011, v. 50, n. 6, p. 061016, doi. 10.1117/1.3590722

By:

Davis, Mike;
Greiner, Mark E.

Publication type:

Article

Photoluminescence of InSb quantum dots in GaAs and GaSb matrices.

Published in:

Semiconductors, 1997, v. 31, n. 1, p. 55, doi. 10.1134/1.1187086

By:

Tsatsul’nikov, A. F.;
Ledentsov, N. N.;
Maksimov, M. V.;
Mel’tser, B. Ya.;
Neklyudov, P. V.;
Shaposhnikov, S. V.;
Volovik, B. V.;
Krestnikov, I. L.;
Sakharov, A. V.;
Bert,, N. A.;
Kop’ev, P. S.;
Alferov, Zh. I.;
Bimberg, D.

Publication type:

Article

Contents: (Part. Part. Syst. Charact. 10/2013).

Published in:: Particle & Particle Systems Characterization, 2013, v. 30, n. 10, p. 823, doi. 10.1002/ppsc.201370039
Publication type:: Article

Synthesis of Colloidal Indium Antimonide Nanocrystals Using Stibine.

Published in:

Particle & Particle Systems Characterization, 2013, v. 30, n. 10, p. 828, doi. 10.1002/ppsc.201370038

By:

Maurice, Axel;
Haro, Miguel Lopez;
Hyot, Bérangère;
Reiss, Peter

Publication type:

Article

Magnetically stabilized electron–hole liquid in indium antimonide.

Published in:

Journal of Experimental & Theoretical Physics, 1997, v. 84, n. 2, p. 406, doi. 10.1134/1.558131

By:

Kavetskaya, I. V.;
Zamkovets, N. V.;
Sibeldin, N. N.;
Tsvetkov, V. A.

Publication type:

Article

Indium antimonide transistors enable low voltage, fast switching.

Published in:: Advanced Materials & Processes, 2005, v. 163, n. 7, p. 12
Publication type:: Article

Solid-state physics: Thermal spin power without magnets.

Published in:

Nature, 2012, v. 487, n. 7406, p. 180, doi. 10.1038/487180a

By:

Heikkilä, Tero T.;
Tserkovnyak, Yaroslav

Publication type:

Article

Ab initio description of the first stages of laser-induced ultra-fast nonthermal melting of InSb.

Published in:

Applied Physics B: Lasers & Optics, 2008, v. 93, n. 4, p. 743, doi. 10.1007/s00340-008-3294-x

By:

Zijlstra, E. S.;
Walkenhorst, J.;
Gilfert, C.;
Sippel, C.;
Töws, W.;
Garcia, M. E.

Publication type:

Article