Works about INDIUM antimonide

Results: 118

Simple and Cost-Effective Design of a THz-Metamaterial-Based Hybrid Sensor on a Single Substrate.

Published in:

Sensors (14248220), 2025, v. 25, n. 12, p. 3660, doi. 10.3390/s25123660

By:

Nath, Uddipan;
Banerjee, Sagnik;
Santini, Carlo;
Citroni, Rocco;
Mangini, Fabio;
Frezza, Fabrizio

Publication type:

Article

Thermally Tunable Bi-Functional Metasurface Based on InSb for Terahertz Applications.

Published in:

Materials (1996-1944), 2025, v. 18, n. 12, p. 2847, doi. 10.3390/ma18122847

By:

Charca-Benavente, Rafael;
Kumar, Rupesh;
Rubio-Noriega, Ruth;
Clemente-Arenas, Mark

Publication type:

Article

Tuning the Au-Free InSb Nanocrystal Morphologies Grown by Patterned Metal-Organic Chemical Vapor Deposition.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 27, p. 4311, doi. 10.1002/adfm.201303390

By:

Lin, Andrew;
Shapiro, Joshua N.;
Eisele, Holger;
Huffaker, Diana L.

Publication type:

Article

Basic Characteristics of Gallium Indium Arsenide Antimonide (GaxIn1 – xAsySb1 – y) Semiconductors Using MATLAB.

Published in:

Journal of Nano- & Electronic Physics, 2022, v. 14, n. 4, p. 1, doi. 10.21272/jnep.14(4).04027

By:

Mostefai, Abdelkrim

Publication type:

Article

Simulation and Finite Element Analysis of Electrical Characteristics of Gate-all-Around Junctionless Nanowire Transistors.

Published in:

Journal of Nano- & Electronic Physics, 2016, v. 8, n. 1, p. 1, doi. 10.21272/jnep.8(1).01025

By:

Chatterjee, Neel;
Pandey, Sujata

Publication type:

Article

Effect of Spin-orbit Interaction on the Magneto-optical Spectra of InSb Quantum Dots.

Published in:

Journal of Nano- & Electronic Physics, 2014, v. 6, n. 4, p. 04028-1

By:

Bauzha, O. S.

Publication type:

Article

Tunability of absorption with temperature in the terahertz regime based on photonic crystals containing graphene and defect InSb layers.

Published in:

European Physical Journal B: Condensed Matter, 2015, v. 88, n. 7, p. 1, doi. 10.1140/epjb/e2015-60233-0

By:

Ardakani, Abbas

Publication type:

Article

A thermally tunable terahertz three-dimensional perfect metamaterial absorber for temperature sensing application.

Published in:

Modern Physics Letters B, 2020, v. 34, n. 18, p. N.PAG, doi. 10.1142/S0217984920502073

By:

Zou, Haijun;
Cheng, Yongzhi

Publication type:

Article

MICROMAGNETISM INDUCED BY THE UNPAIRED ELECTRONS IN InSb SINGLE CRYSTAL.

Published in:

Modern Physics Letters B, 2013, v. 27, n. 27, p. 1, doi. 10.1142/S0217984913501935

By:

MIN GE;
SHUN TAN;
LI PI;
YUHENG ZHANG

Publication type:

Article

A Terahertz Metamaterial Absorber-Based Temperature Sensor Having Nine Resonance Peaks.

Published in:

Gazi University Journal of Science, 2021, v. 34, n. 4, p. 1163, doi. 10.35378/gujs.769726

By:

BAGCI, Fulya

Publication type:

Article

Phase Equilibria in the SbTe-InSb System.

Published in:

Journal of Phase Equilibria & Diffusion, 2016, v. 37, n. 5, p. 524, doi. 10.1007/s11669-016-0462-2

By:

Vassilev, V.;
Aljihmani, L.;
Milanova, V.;
Hristova-Vasileva, T.

Publication type:

Article

Impact of Pocket Layer on Linearity and Analog/RF Performance of InAs-GaSb Vertical Tunnel Field-Effect Transistor.

Published in:

Journal of Electronic Materials, 2023, v. 52, n. 4, p. 2772, doi. 10.1007/s11664-023-10239-7

By:

Saravanan, M.;
Parthasarathy, Eswaran

Publication type:

Article

Dicarboxylic Acid‐Assisted Surface Oxide Removal and Passivation of Indium Antimonide Colloidal Quantum Dots for Short‐Wave Infrared Photodetectors.

Published in:

Angewandte Chemie, 2024, v. 136, n. 8, p. 1, doi. 10.1002/ange.202316733

By:

Zhang, Yangning;
Xia, Pan;
Rehl, Benjamin;
Parmar, Darshan H.;
Choi, Dongsun;
Imran, Muhammad;
Chen, Yiqing;
Liu, Yanjiang;
Vafaie, Maral;
Li, Chongwen;
Atan, Ozan;
Pina, Joao M.;
Paritmongkol, Watcharaphol;
Levina, Larissa;
Voznyy, Oleksandr;
Hoogland, Sjoerd;
Sargent, Edward H.

Publication type:

Article

Nanoscale modeling of dynamically tunable planar optical absorbers utilizing InAs and InSb in metal-oxide-semiconductor–metal configurations.

Published in:

Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03879-5

By:

Dixit, Kirtan P.;
Gregory, Don A.

Publication type:

Article

PHOTOLUMINESCENCE SPECTRA OF DOPED N-TYPE INDIUM ANTIMONIDE CRYSTALS.

Published in:

Eurasian Physical Technical Journal, 2025, v. 22, n. 1, p. 127, doi. 10.31489/2025N1/127-133

By:

S. Sh., Yegemberdiyeva;
B. Zh., Kushkimbayeva;
M. R., Kusherbayeva;
M. T., Keikimanova

Publication type:

Article

Electrodeposition of Stoichiometric Indium Antimonide from Room-Temperature Ionic Liquid 1-Butyl-1-Methylpyrrolidinium Dicyanamide.

Published in:

ChemElectroChem, 2016, v. 3, n. 4, p. 638, doi. 10.1002/celc.201500522

By:

Hsieh, Yi‐Ting;
Chen, Yu‐Chen;
Sun, I‐Wen

Publication type:

Article

Analysis of Specific Features of the QD Electronic Spectrum for Narrow-Gap Semiconductors.

Published in:

Technical Physics Letters, 2022, v. 48, n. 4, p. 201, doi. 10.1134/S1063785022070033

By:

Kabanov, V. F.;
Mikhailov, A. I.;
Gavrikov, M. V.

Publication type:

Article

Thermionic Emission from Indium Antimonide Quantum Dots.

Published in:

Technical Physics Letters, 2021, v. 47, n. 5, p. 385, doi. 10.1134/S1063785021040209

By:

Kabanov, V. F.;
Mikhailov, A. I.;
Gavrikov, M. V.

Publication type:

Article

Synthesis and Properties of Indium Antimonide Big Quantum Dots.

Published in:

Technical Physics Letters, 2020, v. 46, n. 9, p. 901, doi. 10.1134/S1063785020090205

By:

Krylsky, D. V.;
Zhukov, N. D.

Publication type:

Article

Study of the Electrophysical Properties of Colloidal Indium Antimonide Quantum Dots.

Published in:

Technical Physics Letters, 2020, v. 46, n. 4, p. 339, doi. 10.1134/S1063785020040100

By:

Mikhailov, A. I.;
Kabanov, V. F.;
Gavrikov, M. V.

Publication type:

Article

Pnictide-based colloidal quantum dots for infrared sensing applications.

Published in:

Nano Convergence, 2025, v. 12, n. 1, p. 1, doi. 10.1186/s40580-025-00489-y

By:

Seo, Jaeyoung;
Kim, Seongchan;
Yeo, Dongjoon;
Gwak, Namyoung;
Oh, Nuri

Publication type:

Article

Resonant excitation of terahertz surface magnetoplasmons by optical rectification over a rippled surface of n-type indium antimonide.

Published in:

Journal of Plasma Physics, 2024, v. 90, n. 1, p. 1, doi. 10.1017/S0022377823001459

By:

Srivastav, Rohit Kumar;
Panwar, A.

Publication type:

Article

Effect of Complexing Agents on Properties of Electrodeposited InSb Thin Films.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 11, p. 6848, doi. 10.1007/s11664-018-6608-8

By:

Singh, Joginder;
Poolla, Rajaram

Publication type:

Article

Effects of Lattice Relaxation on Composition and Morphology in Strained InGaAsSb Epitaxial Layers.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1311, doi. 10.1007/s11664-015-3662-3

By:

Meyer, Charles;
Cole, Nicholas;
Matzat, Corey;
Cheng, Emily;
Triplett, Gregory

Publication type:

Article

Performance Optimization of InSb Infrared Focal-Plane Arrays with Diffractive Microlenses.

Published in:

Journal of Electronic Materials, 2014, v. 43, n. 8, p. 2795, doi. 10.1007/s11664-014-3054-0

By:

Bai, Jie;
Hu, Weida;
Guo, Nan;
Lei, Wen;
Lv, Yanqiu;
Zhang, Xiaolei;
Si, Junjie;
Chen, Xiaoshuang;
Lu, Wei

Publication type:

Article

Effect of Cooling Conditions on the Microstructure and Thermoelectric Properties of Zn/Si-Codoped InSb.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 7, p. 2388, doi. 10.1007/s11664-013-2606-z

By:

Kim, Donghun;
Kurosaki, Ken;
Ohishi, Yuji;
Muta, Hiroaki;
Yamanaka, Shinsuke

Publication type:

Article

Identification and characterization of ß→α-Sn transition in SnCu1 bulk alloy inoculated with InSb.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 21, p. 16329, doi. 10.1007/s10854-017-7539-5

By:

Skwarek, Agata;
Illés, Balázs;
Horváth, Barbara;
Géczy, Attila;
Zachariasz, Piotr;
Bušek, David

Publication type:

Article

Effect of composition on steady state and transient photoconductivity in isocoordinated InSbSe (0 ≤ x ≤ 25) chalcogenide films.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 19, p. 14202, doi. 10.1007/s10854-017-7277-8

By:

Sharma, Shaveta;
Sharma, Rita;
Kumar, Praveen;
Thangaraj, R.;
Asokan, K.;
Mian, M.

Publication type:

Article

Study of InSb thin films grown on different substrates by the pulsed electrodeposition technique.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 18, p. 13716, doi. 10.1007/s10854-017-7216-8

By:

Singh, Joginder;
Poolla, Rajaram

Publication type:

Article

4 英寸锑化铟晶体自动生长控制研究与实现.

Published in:

Piezoelectrics & Acoustooptics, 2023, v. 45, n. 4, p. 646, doi. 10.11977/j.issn.1004-2474.2023.04.032

By:

陈川贵;
何晔;
白涛;
张晟;
李金;
余光波;
陈艺

Publication type:

Article

Controlled Hyperbolic Structure of Metamaterial for Subdiffraction Visualization in the Terahertz Range.

Published in:

Crystallography Reports, 2023, v. 68, n. 7, p. 1215, doi. 10.1134/S1063774523600837

By:

Fanyaev, I. A.;
Hao, Sh.;
Wang, J.;
Li, J.;
Khakhomov, S.A.

Publication type:

Article

A semiconductor sensor based on indium antimonide for the potentiometric analysis of soils from the Chinarev oil and gas field.

Published in:

Journal of Analytical Chemistry, 2016, v. 71, n. 11, p. 1104, doi. 10.1134/S1061934816090069

By:

Burakhta, V.;
Baitlesova, L.

Publication type:

Article

Influence of Pressure on Phonon Properties of Indium Antimonide.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 9, p. 1, doi. 10.1002/pssr.202400093

By:

Palasyuk, Taras;
Jastrzebski, Cezariusz;
Khachapuridze, Aleksander;
Litwin‐Staszewska, Elzbieta;
Suski, Tadeusz;
Grzegory, Izabella;
Porowski, Sylwester

Publication type:

Article

Temperature-Dependent Electromagnetic Surface Wave Supported by Graphene-Loaded Indium Antimonide Planar Structure.

Published in:

International Journal of Optics, 2024, p. 1, doi. 10.1155/2024/9607121

By:

Yaqoob, M. Z.;
Ali, Ahtisham;
Alkanhal, Majeed A. S.;
Ghaffar, A.;
Khan, Y.;
Umair, M.

Publication type:

Article

Universal Platform for Scalable Semiconductor‐Superconductor Nanowire Networks.

Published in:

Advanced Functional Materials, 2021, v. 31, n. 38, p. 1, doi. 10.1002/adfm.202103062

By:

Jung, Jason;
Op het Veld, Roy L. M.;
Benoist, Rik;
van der Molen, Orson A. H.;
Manders, Carlo;
Verheijen, Marcel A.;
Bakkers, Erik P. A. M.

Publication type:

Article

Electrodeposition of indium antimonide (InSb) from dimethyl sulfoxide-based electrolytes.

Published in:

Journal of Solid State Electrochemistry, 2024, v. 28, n. 10, p. 3755, doi. 10.1007/s10008-024-05947-x

By:

Monnens, Wouter;
Billiet, Naomi;
Binnemans, Koen;
Fransaer, Jan

Publication type:

Article

Ferromagnetism of Alloys Based on Mn- and Ni-Doped Indium Antimonide.

Published in:

Inorganic Materials, 2019, v. 55, n. 9, p. 887, doi. 10.1134/S0020168519090140

By:

Pashkova, O. N.;
Izotov, A. D.;
Sanygin, V. P.;
Efimov, N. N.;
Vasil'ev, M. G.

Publication type:

Article

Solubility limits of manganese in InSb under equilibrium and nonequilibrium synthesis conditions.

Published in:

Inorganic Materials, 2017, v. 53, n. 2, p. 135, doi. 10.1134/S002016851702011X

By:

Sanygin, V.;
Pashkova, O.;
Izotov, A.

Publication type:

Article

Growth of eutectic composites in the InSb-MnSb system.

Published in:

Inorganic Materials, 2016, v. 52, n. 3, p. 268, doi. 10.1134/S0020168516030110

By:

Marenkin, S.;
Kochura, A.;
Fedorchenko, I.;
Izotov, A.;
Vasil'ev, M.;
Trukhan, V.;
Shelkovaya, T.;
Novodvorsky, O.;
Zheludkevich, A.

Publication type:

Article

Microstructure of quenched doped InSb.

Published in:

Inorganic Materials, 2014, v. 50, n. 9, p. 892, doi. 10.1134/S002016851409012X

By:

Sanygin, V.;
Lobanov, N.;
Izotov, A.;
Pashkova, O.;
Filatov, A.

Publication type:

Article

Mn, Zn, and Cd incorporation into the crystal lattice of indium antimonide.

Published in:

Inorganic Materials, 2014, v. 50, n. 6, p. 541, doi. 10.1134/S0020168514060119

By:

Lobanov, N.;
Izotov, A.;
Pashkova, O.;
Sanygin, V.

Publication type:

Article

Spectral dependence of anisotropic picosecond photoconductivity in cubic semiconductors.

Published in:

JETP Letters, 2015, v. 101, n. 2, p. 108, doi. 10.1134/S0021364015020113

By:

Malevich, Y.;
Adomavičius, R.;
Krotkus, A.;
Pačebutas, V.;
Malevich, V.

Publication type:

Article

Electric injection and detection of spin-polarized electrons in lateral spin valves on ferromagnetic metal-semiconductor InSb heterojunctions.

Published in:

JETP Letters, 2015, v. 101, n. 2, p. 113, doi. 10.1134/S0021364015020137

By:

Viglin, N.;
Ustinov, V.;
Tsvelikhovskaya, V.;
Pavlov, T.

Publication type:

Article

Analytical Model of Indium Antimonide Absorption.

Published in:

Journal of Communications Technology & Electronics, 2024, v. 69, n. 4, p. 200, doi. 10.1134/S1064226924700426

By:

Kovshov, V. S.

Publication type:

Article

Analytical Model of Quantum Efficiency of Indium-Antimonide Photodiodes.

Published in:

Journal of Communications Technology & Electronics, 2023, v. 68, n. 9, p. 1077, doi. 10.1134/S1064226923090139

By:

Kovshov, V. S.;
Yakovleva, N. I.;
Nikonov, A. V.

Publication type:

Article

Stability of Indium Antimonide Planar Photodiode Crystals Against Short-Wavelength Radiation.

Published in:

Journal of Communications Technology & Electronics, 2023, v. 68, n. 9, p. 1024, doi. 10.1134/S1064226923090012

By:

Andreichikov, K. S.;
Astakhov, V. P.;
Chekanova, G. V.

Publication type:

Article

Dependence of the Spatial Resolution of a Matrix Photodetector Based on Indium Antimonide on the Thickness of the Photosensitive Layer.

Published in:

Journal of Communications Technology & Electronics, 2021, v. 66, n. 3, p. 333, doi. 10.1134/S1064226921030037

By:

Boltar, K. O.;
Vlasov, P. V.;
Lazarev, P. S.;
Lopukhin, A. A.;
Chishko, V. F.

Publication type:

Article

Investigation of terahertz surface plasmon modulation with optical injection of free carriers.

Published in:

Optical Engineering, 2016, v. 55, n. 6, p. 1, doi. 10.1117/1.OE.55.6.064109

By:

Tao Yang;
Stantchev, Rayko;
Yuan Zhou;
Hopui Ho;
Yongyuan Zhu;
Yiqiang Qin;
Wei Huang

Publication type:

Article

Ultrahigh sensitive temperature sensor based on graphene-semiconductor metamaterial.

Published in:

Applied Physics A: Materials Science & Processing, 2017, v. 123, n. 12, p. 1, doi. 10.1007/s00339-017-1399-y

By:

Keshavarz, A.;
Zakery, A.

Publication type:

Article

Monte Carlo study of impact ionization in InSb induced by intense ultrashort terahertz pulses.

Published in:

Applied Physics A: Materials Science & Processing, 2015, v. 120, n. 4, p. 1241, doi. 10.1007/s00339-015-9322-x

By:

Ašmontas, S.;
Raguotis, R.;
Bumelienė, S.

Publication type:

Article