Works matching DE "INDIUM antimonide"

Results: 116

Stepwise Crystallization Synthetic Strategy for Monodisperse InSb Colloidal Quantum Dots with Mid‐Infrared Absorption.

Published in:

Angewandte Chemie, 2025, v. 137, n. 25, p. 1, doi. 10.1002/ange.202506387

By:

Wang, Qingyu;
Sun, Cong;
Liu, Zifeng;
Zeng, Bin;
Chen, Yifan;
Liu, Zhe;
You, Huangpeng;
Hu, Xingyu;
Li, Peixian;
Zhang, Junjie;
Hou, Xiaoqi;
Dai, Ning;
Li, Yang

Publication type:

Article

Pnictide-based colloidal quantum dots for infrared sensing applications.

Published in:

Nano Convergence, 2025, v. 12, n. 1, p. 1, doi. 10.1186/s40580-025-00489-y

By:

Seo, Jaeyoung;
Kim, Seongchan;
Yeo, Dongjoon;
Gwak, Namyoung;
Oh, Nuri

Publication type:

Article

Identification and characterization of ß→α-Sn transition in SnCu1 bulk alloy inoculated with InSb.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 21, p. 16329, doi. 10.1007/s10854-017-7539-5

By:

Skwarek, Agata;
Illés, Balázs;
Horváth, Barbara;
Géczy, Attila;
Zachariasz, Piotr;
Bušek, David

Publication type:

Article

Effect of composition on steady state and transient photoconductivity in isocoordinated InSbSe (0 ≤ x ≤ 25) chalcogenide films.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 19, p. 14202, doi. 10.1007/s10854-017-7277-8

By:

Sharma, Shaveta;
Sharma, Rita;
Kumar, Praveen;
Thangaraj, R.;
Asokan, K.;
Mian, M.

Publication type:

Article

Study of InSb thin films grown on different substrates by the pulsed electrodeposition technique.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 18, p. 13716, doi. 10.1007/s10854-017-7216-8

By:

Singh, Joginder;
Poolla, Rajaram

Publication type:

Article

Ferromagnetism of Alloys Based on Mn- and Ni-Doped Indium Antimonide.

Published in:

Inorganic Materials, 2019, v. 55, n. 9, p. 887, doi. 10.1134/S0020168519090140

By:

Pashkova, O. N.;
Izotov, A. D.;
Sanygin, V. P.;
Efimov, N. N.;
Vasil'ev, M. G.

Publication type:

Article

Solubility limits of manganese in InSb under equilibrium and nonequilibrium synthesis conditions.

Published in:

Inorganic Materials, 2017, v. 53, n. 2, p. 135, doi. 10.1134/S002016851702011X

By:

Sanygin, V.;
Pashkova, O.;
Izotov, A.

Publication type:

Article

Growth of eutectic composites in the InSb-MnSb system.

Published in:

Inorganic Materials, 2016, v. 52, n. 3, p. 268, doi. 10.1134/S0020168516030110

By:

Marenkin, S.;
Kochura, A.;
Fedorchenko, I.;
Izotov, A.;
Vasil'ev, M.;
Trukhan, V.;
Shelkovaya, T.;
Novodvorsky, O.;
Zheludkevich, A.

Publication type:

Article

Microstructure of quenched doped InSb.

Published in:

Inorganic Materials, 2014, v. 50, n. 9, p. 892, doi. 10.1134/S002016851409012X

By:

Sanygin, V.;
Lobanov, N.;
Izotov, A.;
Pashkova, O.;
Filatov, A.

Publication type:

Article

Mn, Zn, and Cd incorporation into the crystal lattice of indium antimonide.

Published in:

Inorganic Materials, 2014, v. 50, n. 6, p. 541, doi. 10.1134/S0020168514060119

By:

Lobanov, N.;
Izotov, A.;
Pashkova, O.;
Sanygin, V.

Publication type:

Article

PHOTOLUMINESCENCE SPECTRA OF DOPED N-TYPE INDIUM ANTIMONIDE CRYSTALS.

Published in:

Eurasian Physical Technical Journal, 2025, v. 22, n. 1, p. 127, doi. 10.31489/2025N1/127-133

By:

S. Sh., Yegemberdiyeva;
B. Zh., Kushkimbayeva;
M. R., Kusherbayeva;
M. T., Keikimanova

Publication type:

Article

Highly reversible lithiation/delithiation in indium antimonide with hybrid buffering matrix.

Published in:

International Journal of Energy Research, 2021, v. 45, n. 11, p. 16145, doi. 10.1002/er.6848

By:

Hieu, Luong Trung;
So, Seongjoon;
Kim, Il Tae;
Hur, Jaehyun

Publication type:

Article

A Triple-Tunable Dual-Band Metamaterial Absorber Based on Dirac Semimetal and InSb.

Published in:

Photonics, 2024, v. 11, n. 11, p. 1039, doi. 10.3390/photonics11111039

By:

Hu, Baojing;
Huang, Ming;
Cai, Changjin;
Yang, Li

Publication type:

Article

First Experimental Demonstration of the Wide-Field Amplitude Surface Plasmon Resonance Microscopy in the Terahertz Range.

Published in:

Photonics, 2023, v. 10, n. 7, p. 723, doi. 10.3390/photonics10070723

By:

Gerasimov, Vasiliy Valerievich;
Kameshkov, Oleg Eduardovich;
Nikitin, Alexey Konstantinovich;
Khasanov, Ildus Shevketovich;
Lemzyakov, Alexey Georgievich;
Antonova, Irina Veniaminovna;
Ivanov, Artem Ilyich;
Lien, Nghiem Thi Ha;
Nghia, Nguyen Trong;
Anh, Le Tu;
Hung, Nguyen Quoc;
Trang, Ta Thu

Publication type:

Article

Nanoporous Structure Formation on the Surface of InSb by Ion Beam Irradiation.

Published in:

Nanomaterials (2079-4991), 2017, v. 7, n. 8, p. 204, doi. 10.3390/nano7080204

By:

Takashi Miyaji;
Noriko Nitta

Publication type:

Article

Formation of the InAs-, InSb-, GaAs-, and GaSb-polished surface.

Published in:

Applied Nanoscience, 2018, v. 8, n. 5, p. 949, doi. 10.1007/s13204-018-0788-7

By:

Levchenko, Iryna;
Tomashyk, Vasyl;
Stratiychuk, Iryna;
Malanych, Galyna;
Korchovyi, Andrii;
Kryvyi, Serhii;
Kolomys, Oleksandr

Publication type:

Article

Ground-based Fourier transform infrared (FTIR) O3 retrievals from the 3040 cm-1 spectral range at Xianghe, China.

Published in:

Atmospheric Measurement Techniques, 2020, v. 13, n. 10, p. 5379, doi. 10.5194/amt-13-5379-2020

By:

Zhou, Minqiang;
Wang, Pucai;
Langerock, Bavo;
Vigouroux, Corinne;
Hermans, Christian;
Kumps, Nicolas;
Wang, Ting;
Yang, Yang;
Ji, Denghui;
Ran, Liang;
Zhang, Jinqiang;
Xuan, Yuejian;
Chen, Hongbin;
Posny, Françoise;
Duflot, Valentin;
Metzger, Jean-Marc;
De Mazière, Martine

Publication type:

Article

Shape and Size Dependence of Electronic Properties of InSb Diamondoids and Nanocrystals: A Density Functional Theory Study.

Published in:

Advances in Condensed Matter Physics, 2013, p. 1, doi. 10.1155/2013/713267

By:

Abdulsattar, Mudar Ahmed;
Sultan, Thamer R.;
Saeed, Ahmed M.

Publication type:

Article

A thermally tunable terahertz three-dimensional perfect metamaterial absorber for temperature sensing application.

Published in:

Modern Physics Letters B, 2020, v. 34, n. 18, p. N.PAG, doi. 10.1142/S0217984920502073

By:

Zou, Haijun;
Cheng, Yongzhi

Publication type:

Article

MICROMAGNETISM INDUCED BY THE UNPAIRED ELECTRONS IN InSb SINGLE CRYSTAL.

Published in:

Modern Physics Letters B, 2013, v. 27, n. 27, p. 1, doi. 10.1142/S0217984913501935

By:

MIN GE;
SHUN TAN;
LI PI;
YUHENG ZHANG

Publication type:

Article

Numerical analysis of temperature and stress fields in hybrid indium antimonide arrays detector with laser irradiation.

Published in:

Optical & Quantum Electronics, 2019, v. 51, n. 8, p. N.PAG, doi. 10.1007/s11082-019-1975-9

By:

Zhang, Liwen;
Li, Yang;
Zhang, Jincan;
Liu, Min;
Lei, Zhen;
Meng, Qingduan

Publication type:

Article

Study on thermal effects of InSb infrared focal plane arrays irradiated by pulsed laser.

Published in:

Optical & Quantum Electronics, 2018, v. 50, n. 5, p. 1, doi. 10.1007/s11082-018-1491-3

By:

Zhang, Liwen;
Li, Na;
Meng, Qingduan;
Zhang, Jincan;
Lei, Zhen

Publication type:

Article

Operation limitation of CMP in back-thinning process of InSb IRFPAs.

Published in:

Optical & Quantum Electronics, 2017, v. 49, n. 6, p. 1, doi. 10.1007/s11082-017-1056-x

By:

Meng, Qingduan;
Zhang, Xiaoling;
Lü, Yanqiu;
Si, Junjie

Publication type:

Article

Influences of electrode material and design on the reliability of IRFPAs detector under thermal shock.

Published in:

Optical & Quantum Electronics, 2017, v. 49, n. 2, p. 1, doi. 10.1007/s11082-017-0908-8

By:

Zhang, Liwen;
Li, Na;
Song, Lu;
Meng, Qingduan;
Xu, Meiyu;
Lei, Zhen

Publication type:

Article

Frustum pyramid shape of indium bump to lengthen cycling life of InSb infrared detector.

Published in:

Optical & Quantum Electronics, 2017, v. 49, n. 2, p. 1, doi. 10.1007/s11082-017-0933-7

By:

Zhang, Xiaoling;
Gao, Yanping;
Meng, Qingduan;
Lv, Yanqiu;
Si, Junjie

Publication type:

Article

High-Sensitivity Temperature Sensor Based on the Perfect Metamaterial Absorber in the Terahertz Band.

Published in:

Photonics, 2023, v. 10, n. 1, p. 92, doi. 10.3390/photonics10010092

By:

Wang, Yan;
Qiu, Yanqing;
Zhang, Yingping;
Lang, Tingting;
Zhu, Fengjie

Publication type:

Article

INFLUENCE OF DEPOSITION RATE ON THE ELECTRICAL AND OPTICAL PROPERTIES OF ELECTRON-BEAM EVAPORATED InSb FILMS.

Published in:

Armenian Journal of Physics, 2012, v. 5, n. 2, p. 86

By:

Rahul;
Verma, A. K.;
Tripathi, R. S. N.;
Vishwakarma, S. R.

Publication type:

Article

Mechanism and Features of Field Emission in Semiconductors.

Published in:

Semiconductors, 2019, v. 53, n. 3, p. 321, doi. 10.1134/S1063782619030229

By:

Zhukov, N. D.;
Mikhailov, A. I.;
Mosiyash, D. S.

Publication type:

Article

Spinodal Decomposition in InSb/AlAs Heterostructures.

Published in:

Semiconductors, 2018, v. 52, n. 11, p. 1392, doi. 10.1134/S1063782618110027

By:

Abramkin, D. S.;
Bakarov, A. K.;
Gutakovskii, A. K.;
Shamirzaev, T. S.

Publication type:

Article

InSb quantum dots produced by liquid-phase epitaxy on InGaAsSb/GaSb substrates.

Published in:

Semiconductors, 2017, v. 51, n. 8, p. 1101, doi. 10.1134/S1063782617080310

By:

Sokura, L.;
Parkhomenko, Ya.;
Moiseev, K.;
Nevedomsky, V.;
Bert, N.

Publication type:

Article

Specific features of the capacitance-voltage characteristics of a Cu-SiO- p-InSb MIS structure.

Published in:

Semiconductors, 2017, v. 51, n. 3, p. 367, doi. 10.1134/S1063782617030022

By:

Aliev, R.;
Gajiev, G.;
Gadzhialiev, M.;
Ismailov, A.;
Pirmagomedov, Z.

Publication type:

Article

Study of the impurity photoconductivity in p-InSb using epitaxial p contacts.

Published in:

Semiconductors, 2016, v. 50, n. 8, p. 1005, doi. 10.1134/S1063782616080108

By:

Eminov, Sh.

Publication type:

Article

Local emission spectroscopy of surface micrograins in AB semiconductors.

Published in:

Semiconductors, 2016, v. 50, n. 7, p. 894, doi. 10.1134/S1063782616070265

By:

Zhukov, N.;
Gluhovskoy, E.;
Mosiyash, D.

Publication type:

Article

Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growth.

Published in:

Semiconductors, 2016, v. 50, n. 7, p. 910, doi. 10.1134/S1063782616070216

By:

Romanov, V.;
Dement'ev, P.;
Moiseev, K.

Publication type:

Article

Quantum dots grown in the InSb/GaSb system by liquid-phase epitaxy.

Published in:

Semiconductors, 2016, v. 50, n. 7, p. 976, doi. 10.1134/S1063782616070198

By:

Parkhomenko, Ya.;
Dement'ev, P.;
Moiseev, K.

Publication type:

Article

On the local injection of emitted electrons into micrograins on the surface of A-B semiconductors.

Published in:

Semiconductors, 2016, v. 50, n. 6, p. 756, doi. 10.1134/S1063782616060257

By:

Zhukov, N.;
Glukhovskoi, E.;
Khazanov, A.

Publication type:

Article

Thermoelectric power of n-InSb in a transverse quantizing magnetic field.

Published in:

Semiconductors, 2015, v. 49, n. 7, p. 883, doi. 10.1134/S1063782615070076

By:

Gadzhialiev, M.;
Bashirov, R.;
Pirmagomedov, Z.;
Efendieva, T.;
Mädge, H.;
Filar, K.

Publication type:

Article

The effect of an excess of components on the electrical properties of indium-antimonide films.

Published in:

Semiconductors, 2015, v. 49, n. 2, p. 209, doi. 10.1134/S1063782615020098

By:

Gulyaev, A.;
Shnitnikov, A.

Publication type:

Article

Temperature and magnetic-field dependences of the thermoelectric power of electronic indium antimonide.

Published in:

Semiconductors, 2014, v. 48, n. 9, p. 1139, doi. 10.1134/S1063782614090085

By:

Gadjialiev, M.;
Pirmagomedov, Z.;
Efendieva, T.

Publication type:

Article

On the structure of InSb nanowires in the channels of chrysotile asbestos.

Published in:

Semiconductors, 2014, v. 48, n. 7, p. 974, doi. 10.1134/S1063782614070215

By:

Uryupin, O.;
Kartenko, N.;
Tabachkova, N.

Publication type:

Article

High-temperature interfacial electroluminescence in type-II broken-gap heterostructures based on InSb quantum dashes in n-InAs matrix.

Published in:

Semiconductors, 2014, v. 48, n. 7, p. 911, doi. 10.1134/S1063782614070197

By:

Romanov, V.;
Ivanov, E.;
Moiseev, K.

Publication type:

Article

Electron spin polarization and longitudinal autosoliton current in p-InSb in a longitudinal magnetic field.

Published in:

Semiconductors, 2014, v. 48, n. 2, p. 135, doi. 10.1134/S1063782614020158

By:

Kamilov, I.;
Stepurenko, A.;
Gummetov, A.

Publication type:

Article

Specific features of electroluminescence in heterostructures with InSb quantum dots in an InAs matrix.

Published in:

Semiconductors, 2013, v. 47, n. 11, p. 1523, doi. 10.1134/S1063782613110171

By:

Parkhomenko, Ya.;
Ivanov, E.;
Moiseev, K.

Publication type:

Article

Impact of Pocket Layer on Linearity and Analog/RF Performance of InAs-GaSb Vertical Tunnel Field-Effect Transistor.

Published in:

Journal of Electronic Materials, 2023, v. 52, n. 4, p. 2772, doi. 10.1007/s11664-023-10239-7

By:

Saravanan, M.;
Parthasarathy, Eswaran

Publication type:

Article

Effect of Complexing Agents on Properties of Electrodeposited InSb Thin Films.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 11, p. 6848, doi. 10.1007/s11664-018-6608-8

By:

Singh, Joginder;
Poolla, Rajaram

Publication type:

Article

Effects of Lattice Relaxation on Composition and Morphology in Strained InGaAsSb Epitaxial Layers.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1311, doi. 10.1007/s11664-015-3662-3

By:

Meyer, Charles;
Cole, Nicholas;
Matzat, Corey;
Cheng, Emily;
Triplett, Gregory

Publication type:

Article

Performance Optimization of InSb Infrared Focal-Plane Arrays with Diffractive Microlenses.

Published in:

Journal of Electronic Materials, 2014, v. 43, n. 8, p. 2795, doi. 10.1007/s11664-014-3054-0

By:

Bai, Jie;
Hu, Weida;
Guo, Nan;
Lei, Wen;
Lv, Yanqiu;
Zhang, Xiaolei;
Si, Junjie;
Chen, Xiaoshuang;
Lu, Wei

Publication type:

Article

Effect of Cooling Conditions on the Microstructure and Thermoelectric Properties of Zn/Si-Codoped InSb.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 7, p. 2388, doi. 10.1007/s11664-013-2606-z

By:

Kim, Donghun;
Kurosaki, Ken;
Ohishi, Yuji;
Muta, Hiroaki;
Yamanaka, Shinsuke

Publication type:

Article

Tuning the Au-Free InSb Nanocrystal Morphologies Grown by Patterned Metal-Organic Chemical Vapor Deposition.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 27, p. 4311, doi. 10.1002/adfm.201303390

By:

Lin, Andrew;
Shapiro, Joshua N.;
Eisele, Holger;
Huffaker, Diana L.

Publication type:

Article

4 英寸锑化铟晶体自动生长控制研究与实现.

Published in:

Piezoelectrics & Acoustooptics, 2023, v. 45, n. 4, p. 646, doi. 10.11977/j.issn.1004-2474.2023.04.032

By:

陈川贵;
何晔;
白涛;
张晟;
李金;
余光波;
陈艺

Publication type:

Article