Works matching DE "INDIUM aluminum arsenide"

Results: 31

Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates.

Published in:

Semiconductors, 2017, v. 51, n. 6, p. 760, doi. 10.1134/S1063782617060100

By:

Galiev, G.;
Klochkov, A.;
Vasil'evskii, I.;
Klimov, E.;
Pushkarev, S.;
Vinichenko, A.;
Khabibullin, R.;
Maltsev, P.

Publication type:

Article

Features of the diagnostics of metamorphic InAlAs/InGaAs/InAlAs nanoheterostructures by high-resolution X-ray diffraction in the ω-scanning mode.

Published in:

Semiconductors, 2016, v. 50, n. 4, p. 559, doi. 10.1134/S1063782616040242

By:

Vasil'evskii, I.;
Pushkarev, S.;
Grekhov, M.;
Vinichenko, A.;
Lavrukhin, D.;
Kolentsova, O.

Publication type:

Article

Metamorphic distributed Bragg reflectors for the 1440-1600 nm spectral range: Epitaxy, formation, and regrowth of mesa structures.

Published in:

Semiconductors, 2015, v. 49, n. 10, p. 1388, doi. 10.1134/S1063782615100073

By:

Egorov, A.;
Karachinsky, L.;
Novikov, I.;
Babichev, A.;
Berezovskaya, T.;
Nevedomskiy, V.

Publication type:

Article

Photoluminescence properties of modulation-doped InAlAs/InGaAs/InAlAs structures with strained inas and gaas nanoinserts in the quantum well.

Published in:

Semiconductors, 2015, v. 49, n. 9, p. 1207, doi. 10.1134/S1063782615090122

By:

Galiev, G.;
Vasil'evskii, I.;
Klimov, E.;
Klochkov, A.;
Lavruhin, D.;
Pushkarev, S.;
Maltsev, P.

Publication type:

Article

Influence of buffer-layer construction and substrate orientation on the electron mobilities in metamorphic InAlAs/InGaAs/InAlAs structures on GaAs substrates.

Published in:

Semiconductors, 2015, v. 49, n. 7, p. 921, doi. 10.1134/S1063782615070131

By:

Kulbachinskii, V.;
Oveshnikov, L.;
Lunin, R.;
Yuzeeva, N.;
Galiev, G.;
Klimov, E.;
Pushkarev, S.;
Maltsev, P.

Publication type:

Article

Study of high-speed semiconductor VCSELs based on AlInGaAs heterostructures with large gain-cavity detuning.

Published in:

Semiconductors, 2015, v. 49, n. 1, p. 88, doi. 10.1134/S1063782615010170

By:

Maleev, N.;
Blokhin, S.;
Bobrov, M.;
Kuzmenkov, A.;
Blokhin, A.;
Moser, P.;
Lott, J.;
Bimberg, D.;
Ustinov, V.

Publication type:

Article

Application of photoluminescence spectroscopy to studies of InAlAs/InGaAs/GaAs metamorphic nanoheterostructures.

Published in:

Semiconductors, 2014, v. 48, n. 7, p. 883, doi. 10.1134/S1063782614070070

By:

Galiev, G.;
Vasil'evskii, I.;
Klimov, E.;
Klochkov, A.;
Lavruhin, D.;
Pushkarev, S.;
Maltsev, P.

Publication type:

Article

Effect of GaAs (100) substrate misorientation on the electrical parameters and surface morphology of metamorphic InAlAs/InGaAs/InAlAs HEMT nanoheterostructures.

Published in:

Semiconductors, 2014, v. 48, n. 1, p. 63, doi. 10.1134/S1063782614010138

By:

Galiev, G.;
Pushkarev, S.;
Vasil'evskii, I.;
Klimov, E.;
Klochkov, A.;
Maltsev, P.

Publication type:

Article

MHEMT with a power-gain cut-off frequency of f = 0.63 THz on the basis of a InAlAs/InGaAs/InAlAs/GaAs nanoheterostructure.

Published in:

Semiconductors, 2014, v. 48, n. 1, p. 69, doi. 10.1134/S1063782614010187

By:

Lavrukhin, D.;
Yachmenev, A.;
Galiev, R.;
Khabibullin, R.;
Ponomarev, D.;
Fedorov, Yu.;
Maltsev, P.

Publication type:

Article

Maximum drift velocity of electrons in selectively doped InAlAs/InGaAs/InAlAs heterostructures with InAs inserts.

Published in:

Semiconductors, 2013, v. 47, n. 3, p. 372, doi. 10.1134/S1063782613030263

By:

Šilenas, A.;
Požela, Yu.;
Požela, K.;
Jucienė, V.;
Vasil'evskii, I.;
Galiev, G.;
Pushkarev, S.;
Klimov, E.

Publication type:

Article

Admittance spectroscopy of ring diode InGaAs/InAlAs/InP quantum-well structures.

Published in:

Semiconductors, 2012, v. 46, n. 12, p. 1524, doi. 10.1134/S1063782612120172

By:

Tikhov, S.;
Baidus, N.;
Biryukov, A.;
Degtyarev, V.

Publication type:

Article

Lasing in 9.6-μm Quantum Cascade Lasers.

Published in:

Technical Physics, 2018, v. 63, n. 10, p. 1511, doi. 10.1134/S1063784218100043

By:

Babichev, A. V.;
Gusev, G. A.;
Sofronov, A. N.;
Firsov, D. A.;
Vorob’ev, L. E.;
Usikova, A. A.;
Zadiranov, Yu. M.;
Il’inskaya, N. D.;
Nevedomskii, V. N.;
Dyudelev, V. V.;
Sokolovskii, G. S.;
Gladyshev, A. G.;
Karachinsky, L. Ya.;
Novikov, I. I.;
Egorov, A. Yu.

Publication type:

Article

CHARACTERIZING LOCALIZED STRAIN OF INAlAs/InGaAs DETECTOR USING LOW FREQUENCY ATOMIC FORCE ACOUSTIC MICROSCOPE.

Published in:

Surface Review & Letters, 2016, v. 23, n. 1, p. -1, doi. 10.1142/S0218625X15501103

By:

SU, WEITAO;
DOU, HONGLEI;
HUO, DEXUAN;
YU, GUOLIN;
DAI, NING

Publication type:

Article

INFLUENCE OF ANNEALING TREATMENT ON THE PHYSICAL PROPERTIES OF FILMS.

Published in:

Surface Review & Letters, 2015, v. 22, n. 5, p. -1, doi. 10.1142/S0218625X15500626

By:

AFZAL, NAVEED;
DEVARAJAN, MUTHARASU;
AHMAD, M. A.;
IBRAHIM, KAMARULAZIZI

Publication type:

Article

Junctionless Tunnel Field Effect Transistor with Nonuniform Doping.

Published in:

International Journal of Nanoscience, 2015, v. 14, n. 3, p. -1, doi. 10.1142/S0219581X14500252

By:

Goswami, Yogesh;
Asthana, Pranav;
Basak, Shibir;
Ghosh, Bahniman

Publication type:

Article

The Role of Excitation Photons Energy in the Photoinduced Carrier Dynamics in InGaAs/InAlAs Superlattice Heterostructures.

Published in:

Technical Physics Letters, 2018, v. 44, n. 12, p. 1115, doi. 10.1134/S1063785018120192

By:

Buryakov, A. M.;
Khusyainov, D. I.;
Mishina, E. D.;
Khabibullin, R. A.;
Yachmenev, A. E.;
Ponomarev, D. S.

Publication type:

Article

The influence of an InAlAs transition layer design on the transport characteristics of a metamorphic high-electron-mobility transistor.

Published in:

Technical Physics Letters, 2016, v. 42, n. 3, p. 284, doi. 10.1134/S1063785016030238

By:

Lazarenko, A.;
Nikitina, E.;
Pirogov, E.;
Sobolev, M.;
Egorov, A.

Publication type:

Article

Study on the Physical and Leakage Current Characteristics of an Optimized High-k/InAlAs MOS Capacitor with a HfO2–Al2O3 Laminated Dielectric.

Published in:

Coatings (2079-6412), 2018, v. 8, n. 12, p. 417, doi. 10.3390/coatings8120417

By:

Guan, He;
Jiang, Chengyu

Publication type:

Article

X-ray analysis of multilayer InAlAs/InGaAs/InAlAs HEMT heterostructures with InAs nanoinsert in quantum well.

Published in:

Crystallography Reports, 2017, v. 62, n. 3, p. 355, doi. 10.1134/S1063774517030026

By:

Blagov, A.;
Galiev, G.;
Imamov, R.;
Klimov, E.;
Kondratev, O.;
Pisarevskii, Yu.;
Prosekov, P.;
Pushkarev, S.;
Seregin, A.;
Koval'chuk, M.

Publication type:

Article

Structural and electrophysical properties of InAlAs/InGaAs/InAlAs/InP HEMT nanoheterostructures with different combinations of InAs and GaAs inserts in quantum well.

Published in:

Crystallography Reports, 2015, v. 60, n. 3, p. 397, doi. 10.1134/S1063774515030062

By:

Galiev, G.;
Vasiliev, A.;
Vasil'evskii, I.;
Imamov, R.;
Klimov, E.;
Klochkov, A.;
Lavruhin, D.;
Maltsev, P.;
Pushkarev, S.;
Trunkin, I.

Publication type:

Article

Erratum to: 'Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well'.

Published in:

2015

By:

Galiev, G.;
Vasiliev, A.;
Imamov, R.;
Klimov, E.;
Maltsev, P.;
Pushkarev, S.;
Presniakov, M.;
Trunkin, I.

Publication type:

Erratum

X-Ray diffractometry of metamorphic nanoheterostructures.

Published in:

Crystallography Reports, 2014, v. 59, n. 2, p. 258, doi. 10.1134/S1063774514020096

By:

Galiev, G.;
Pushkarev, S.;
Klimov, E.;
Maltsev, P.;
Imamov, R.;
Subbotin, I.

Publication type:

Article

Optimization of MBE Growth Conditions of In0.52Al0.48As Waveguide Layers for InGaAs/InAlAs/InP Quantum Cascade Lasers.

Published in:

Materials (1996-1944), 2019, v. 12, n. 10, p. 1621, doi. 10.3390/ma12101621

By:

Gutowski, Piotr;
Sankowska, Iwona;
Słupiński, Tomasz;
Pierścińska, Dorota;
Pierściński, Kamil;
Kuźmicz, Aleksandr;
Gołaszewska-Malec, Krystyna;
Bugajski, Maciej

Publication type:

Article

Erratum: Physical modelling and experimental characterisation of InAlAs/InGaAs avalanche photodiode for 10 Gb/s data rates and higher.

Published in:: 2018
Publication type:: Correction Notice

Physical modelling and experimental characterisation of InAlAs/InGaAs avalanche photodiode for 10 Gb/s data rates and higher.

Published in:

IET Optoelectronics (Wiley-Blackwell), 2018, v. 12, n. 1, p. 5, doi. 10.1049/iet-opt.2017.0068

By:

Abdulwahid, Omar S.;
Sexton, James;
Kostakis, Ioannis;
Ian, Kawa;
Missous, Mohamed

Publication type:

Article

Classical Effects in the Weak-Field Magnetoresistance of InGaAs/InAlAs Quantum Wells.

Published in:

JETP Letters, 2018, v. 107, n. 5, p. 320, doi. 10.1134/S0021364018050028

By:

Melnikov, M. Yu.;
Shashkin, A. A.;
Dolgopolov, V. T.;
Biasiol, G.;
Roddaro, S.;
Sorba, L.

Publication type:

Article

Efficient Emission from InAlGaAs Single Quantum Dots with Low Lattice Misfit and AlGaAs Indirect Bandgap Barrier.

Published in:

Acta Physica Polonica: A, 2016, v. 130, n. 5, p. 1229, doi. 10.12693/APhysPolA.130.1229

By:

SŁUPIŃSKI, T.;
KORONA, K. P.;
PAPIERSKA, J.;
BORYSIUK, J.

Publication type:

Article

Quantum dot cascade laser.

Published in:

Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-144

By:

Zhuo, Ning;
Liu, Feng;
Zhang, Jin;
Wang, Li;
Liu, Jun;
Zhai, Shen;
Wang, Zhan

Publication type:

Article

Improvement of Ohmic Contact for InAlGaN/AlN/GaN HEMTs with Recess Etching.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 8, p. 1, doi. 10.1002/pssa.201700456

By:

Riedmüller, Sandra;
Steinmann, Claudia;
Grünenpütt, Jan;
Scholz, Ferdinand;
Blanck, Hervé

Publication type:

Article

Micro- Raman study on chirped In Ga As- In Al As superlattices.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2013, v. 210, n. 11, p. 2364, doi. 10.1002/pssa.201330002

By:

Hu, Yongzheng;
Wang, Lijun;
Liu, Fengqi;
Zhang, Jinchuan;
Liu, Junqi;
Wang, Zhanguo

Publication type:

Article

Electron Mobilities and Effective Masses in InGaAs/InAlAs HEMT Structures with High In Content.

Published in:

Journal of Low Temperature Physics, 2016, v. 185, n. 5/6, p. 701, doi. 10.1007/s10909-016-1589-6

By:

Yuzeeva, N.;
Sorokoumova, A.;
Lunin, R.;
Oveshnikov, L.;
Galiev, G.;
Klimov, E.;
Lavruchin, D.;
Kulbachinskii, V.

Publication type:

Article