Works matching DE "INDIUM alloys"

Results: 113

Effect of Al content on the performance of Cu(InAl)S synthesized by hydrothermal solution processing.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 6, p. 2829, doi. 10.1007/s10854-014-1948-5

By:

Deng, Weizhi;
Yan, Zhi;
Fang, Yalin;
Wang, Ying

Publication type:

Article

Optoelectronic features of novel infrared CuInS-ZnInS crystalline alloys.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 1, p. 163, doi. 10.1007/s10854-013-1567-6

By:

Kozer, V.;
Bozhko, V.;
Parasyuk, O.;
Novosad, O.;
Fedorchuk, A.

Publication type:

Article

The effect of post-annealing under CdCl2 atmosphere on the properties of ITO thin films deposited by DC magnetron sputtering.

Published in:

Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 5, p. 441, doi. 10.1007/s10854-009-9932-1

By:

Shenghao Wang;
Jingquan Zhang;
Bo Wang;
Lianghuan Feng;
Yaping Cai;
Lili Wu;
Wei Li;
Zhi Lei;
Bing Li

Publication type:

Article

The correlation between preferred orientation and performance of ITO thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, p. 411, doi. 10.1007/s10854-007-9231-7

By:

Yao Chen;
Yuqin Zhou;
Qunfang Zhang;
Meifang Zhu;
Fengzhen Liu

Publication type:

Article

Effect of indium alloying with lead together with the addition of phosphoric acid in electrolyte to improve lead-acid battery performance.

Published in:

Journal of Solid State Electrochemistry, 2015, v. 19, n. 5, p. 1463, doi. 10.1007/s10008-015-2765-3

By:

El-Sayed, Abdel-Rahman;
Mohran, Hossnia;
Abd El-Lateef, Hany;
Shilkamy, Hoda

Publication type:

Article

Phase composition of electrodeposited silver-indium alloys.

Published in:

Journal of Solid State Electrochemistry, 2008, v. 12, n. 11, p. 1461, doi. 10.1007/s10008-007-0489-8

By:

Ts. Dobrovolska;
G. Beck;
I. Krastev;
A. Zielonka

Publication type:

Article

Peculiarities of phase transitions in polytypes of monoclinic TlInS2.

Published in:

Inorganic Materials, 2009, v. 45, n. 1, p. 1, doi. 10.1134/S0020168509010014

By:

Borovoi, N.;
Gololobov, Yu.;
Isaenko, G.;
Stepanishchev, N.

Publication type:

Article

Polytypes of monoclinic TlInS2.

Published in:

Inorganic Materials, 2009, v. 45, n. 1, p. 7, doi. 10.1134/S0020168509010026

By:

Alekperov, O.;
Nadzhafov, A.

Publication type:

Article

Low-temperature heat capacity and thermodynamic properties of InSe.

Published in:

Inorganic Materials, 2007, v. 43, n. 9, p. 921, doi. 10.1134/S0020168507090014

By:

Tyurin, A.;
Gavrichev, K.;
Zlomanov, V.

Publication type:

Article

Structure of Sn-rich Sn-In melts.

Published in:

Inorganic Materials, 2004, v. 40, n. 12, p. 1284, doi. 10.1007/s10789-005-0081-5

By:

Mudryi, S. I.;
Lutsishin, T. I.;
Korolyshin, A. V.

Publication type:

Article

Photoluminescence of Rare-Earth-Doped InSe and GaSe Single Crystals.

Published in:

Inorganic Materials, 2004, v. 40, n. 6, p. 567, doi. 10.1023/B:INMA.0000031987.03089.a8

By:

Abdinov, A.Sh.;
Babaeva, R.F.;
Rzaev, R.M.;
Gasanov, G.A.

Publication type:

Article

Degradation mechanism for high-temperature sliding wear in surface-modified In718 superalloy.

Published in:

Cogent Engineering, 2018, v. 5, n. 1, p. 1, doi. 10.1080/23311916.2018.1501864

By:

Thirugnanasambantham, KG.;
Raju, Ramesh;
Sankaramoorthy, T.;
Velmurugan, P.;
Kannagi, A.;
Chaitanya Kishore Reddy, M.;
Sai Koushik Chary, V.;
Mustafa, M.A.;
Ramesh Chandra, V.

Publication type:

Article

Indium Mineralization in the Xianghualing Sn-Polymetallic Orefield in Southern Hunan, Southern China.

Published in:

Minerals (2075-163X), 2017, v. 7, n. 9, p. 173, doi. 10.3390/min7090173

By:

Jianping Liu;
Yanan Rong;
Shugen Zhang;
Zhongfa Liu;
Weikang Chen

Publication type:

Article

Microstructures and Magnetic Properties of Rapidly Solidified MnAl Alloys Modified with Indium.

Published in:

Journal of Superconductivity & Novel Magnetism, 2023, v. 36, n. 1, p. 217, doi. 10.1007/s10948-022-06463-7

By:

Liu, Y. R.;
Su, K. P.;
Zhang, Y. H.;
Shang, Q. X.;
Hu, S. L.;
Wang, H. O.;
Huang, S.;
Yang, D. X.;
Huo, D. X.;
Liu, J.

Publication type:

Article

Self-organisation phenomena during electrodeposition of palladium-indium alloys.

Published in:

Transactions of the Institute of Metal Finishing, 2015, v. 93, n. 6, p. 326, doi. 10.1080/00202967.2015.1117259

By:

Dobrovolska, Ts.;
Georgiev, M.;
Krastev, I.

Publication type:

Article

Electrodeposition of gold-indium alloys.

Published in:

Transactions of the Institute of Metal Finishing, 2015, v. 93, n. 6, p. 321, doi. 10.1080/00202967.2015.1117260

By:

Dobrovolska, T. S.;
Georgiev, M.;
Krastev, I.

Publication type:

Article

Formation mechanism analysis and experimental investigation of single-step printing customized circuits by liquid-metal direct writing.

Published in:

Mechanical Sciences, 2021, v. 12, n. 1, p. 143, doi. 10.5194/ms-12-143-2021

By:

Chao, Yan Pu;
Yi, Hao;
Cen, Hui;
Li, Yao Hui

Publication type:

Article

Phase change behaviors of In-Ge-Sb-Te alloy.

Published in:

Applied Physics A: Materials Science & Processing, 2008, v. 90, n. 4, p. 629, doi. 10.1007/s00339-007-4381-2

By:

Lee, M. L.;
Miao, X. S.;
Ting, L. H.;
Shi, L. P.

Publication type:

Article

“Positive” and “negative” electric-pulse-induced reversible resistance switching effect in Pr0.7Ca0.3MnO3 films.

Published in:

Applied Physics A: Materials Science & Processing, 2007, v. 86, n. 2, p. 357, doi. 10.1007/s00339-006-3769-8

By:

Wang, Q.;
Shang, D. S.;
Wu, Z. H.;
Chen, L. D.;
Li, X. M.

Publication type:

Article

Determination of molecular orientation in ultrathin liquid crystal. films on solid substrates using X-ray absorption spectroscopy.

Published in:

Applied Physics A: Materials Science & Processing, 1997, v. 65, n. 3, p. 231, doi. 10.1007/s003390050571

By:

Wegner, H.;
Weiss, K.;
Grunze, M.;
Wöll, C.

Publication type:

Article

Liquid metal-tailored gluten network for protein-based e-skin.

Published in:

Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-28901-9

By:

Chen, Bin;
Cao, Yudong;
Li, Qiaoyu;
Yan, Zhuo;
Liu, Rui;
Zhao, Yunjiao;
Zhang, Xiang;
Wu, Minying;
Qin, Yixiu;
Sun, Chang;
Yao, Wei;
Cao, Ziyi;
Ajayan, Pulickel M.;
Chee, Mason Oliver Lam;
Dong, Pei;
Li, Zhaofen;
Shen, Jianfeng;
Ye, Mingxin

Publication type:

Article

Metallurgy and processing of coloured gold intermetallics -- Part I: Properties and surface processing.

Published in:

Gold Bulletin, 2010, v. 43, n. 1, p. 4, doi. 10.1007/BF03214961

By:

Klotz, Ulrich E.

Publication type:

Article

Superconducting properties of (PbSn)Te doped with indium under conditions of hydrostatic compression.

Published in:

Semiconductors, 2017, v. 51, n. 8, p. 1017, doi. 10.1134/S106378261708022X

By:

Mikhailin, N.;
Parfeniev, R.;
Chernyaev, A.;
Shamshur, D.;
Andrianov, G.

Publication type:

Article

Magnetic properties of (FeInS)(CuInS) single-crystal alloys.

Published in:

Semiconductors, 2014, v. 48, n. 6, p. 705, doi. 10.1134/S1063782614060062

By:

Bodnar, I.;
Trukhanov, S.

Publication type:

Article

Phase transformations during the Ag-In plating and bonding of vertical diode elements of multijunction solar cells.

Published in:

Semiconductors, 2013, v. 47, n. 6, p. 856, doi. 10.1134/S1063782613060122

By:

Klochko, N.;
Khrypunov, G.;
Volkova, N.;
Kopach, V.;
Lyubov, V.;
Kirichenko, M.;
Momotenko, A.;
Kharchenko, N.;
Nikitin, V.

Publication type:

Article

On the band gap in (InS)(CuInS) alloy single crystals.

Published in:

Semiconductors, 2012, v. 46, n. 9, p. 1122, doi. 10.1134/S1063782612090047

By:

Bodnar, I.;
Shatalova, V.

Publication type:

Article

Negative Luminescence in p-InAsSbP/n-InAs Diodes.

Published in:

Semiconductors, 2001, v. 35, n. 3, p. 321, doi. 10.1134/1.1356155

By:

Aıdaraliev, M.;
Zotova, N. V.;
Karandashev, S. A.;
Matveev, B. A.;
Remennyı, M. A.;
Stus’, N. M.;
Talalakin, G. N.

Publication type:

Article

Composition Analysis of Coherent Nanoinsertions of Solid Solutions on the Basis of High-Resolution Electron Micrographs.

Published in:

Semiconductors, 2001, v. 35, n. 3, p. 347, doi. 10.1134/1.1356160

By:

Soshnikov, I. P.;
Gorbenko, O. M.;
Golubok, A. O.;
Ledentsov, N. N.

Publication type:

Article

Type II Heterojunctions in an InGaAsSb/GaSb System: Magnetotransport Properties.

Published in:

Semiconductors, 2001, v. 35, n. 3, p. 331, doi. 10.1134/1.1356157

By:

Voronina, T. I.;
Zhurtanov, B. E.;
Lagunova, T. S.;
Mikhaılova, M. P.;
Moiseev, K. D.;
Rozov, A. E.;
Yakovlev, Yu. P.

Publication type:

Article

Optically Pumped Mid-Infrared InGaAs(Sb) LEDs.

Published in:

Semiconductors, 2001, v. 35, n. 3, p. 357, doi. 10.1134/1.1356162

By:

Zotova, N. V.;
Karandashev, S. A.;
Matveev, B. A.;
Remennyı, M. A.;
Stus’, N. M.;
Talalakin, G. N.;
Shustov, V. V.

Publication type:

Article

Current-Tunable Lasers with a Narrow Emission Line Operating at 3.3μm.

Published in:

Semiconductors, 2001, v. 35, n. 3, p. 360, doi. 10.1134/1.1356163

By:

Imenkov, A. N.;
Kolchanova, N. M.;
Kubat, P.;
Moiseev, K. D.;
Civis, C.;
Yakovlev, Yu. P.

Publication type:

Article

Record Power Characteristics of InGaAs/AlGaAs/GaAs Heterostructure Lasers.

Published in:

Semiconductors, 2001, v. 35, n. 3, p. 365, doi. 10.1134/1.1356164

By:

Livshits, D. A.;
Egorov, A. Yu.;
Kochnev, I. V.;
Kapitonov, V. A.;
Lantratov, V. M.;
Ledentsov, N. N.;
Nalyot, T. A.;
Tarasov, I. S.

Publication type:

Article

Study of Multilayer Structures with InAs Nanoobjects in a Silicon Matrix.

Published in:

Semiconductors, 2000, v. 34, n. 7, p. 810, doi. 10.1134/1.1188079

By:

Petrov, V. N.;
Polyakov, N. K.;
Egorov, V. A.;
Cirlin, G. E.;
Zakharov, N. D.;
Werner, P.;
Ustinov, V. M.;
Denisov, D. V.;
Ledentsov, N. N.;
Alferov, Zh. I.

Publication type:

Article

Photosensitivity of a-Si:H/n-InSe Heterocontacts.

Published in:

Semiconductors, 2000, v. 34, n. 6, p. 677, doi. 10.1134/1.1188054

By:

Nikolaev, Yu. A.;
Rud’, V. Yu.;
Rud’, Yu. V.;
Terukov, E. I.

Publication type:

Article

Low-Temperature Photoluminescence and X-ray Diffractometry Study of In[sub x]Ga[sub 1 – ][sub x]As Quantum Wells.

Published in:

Semiconductors, 2000, v. 34, n. 6, p. 693, doi. 10.1134/1.1188057

By:

Evstigneev, S. V.;
Imamov, R. M.;
Lomov, A. A.;
Sadof’ev, Yu. G.;
Khabarov, Yu. V.;
Chuev, M. A.;
Shipitsin, D. S.

Publication type:

Article

Light Emitting Diodes for the Spectral Range of λ = 3.3–4.3 μm Fabricated from the InGaAs- and InAsSbP-Based Solid Solutions: Electroluminescence in the Temperature Range of 20–180°C.

Published in:

Semiconductors, 2000, v. 34, n. 1, p. 104, doi. 10.1134/1.1187963

By:

Aıdaraliev, M.;
Zotova, N. V.;
Karandashev, S. A.;
Matveev, B. A.;
Remennyı, M. A.;
Stus’, N. M.;
Talalakin, G. N.

Publication type:

Article

A Spatially Single-Mode Laser for a Range of 1.25–1.28 μm on the Basis of InAs Quantum Dots on a GaAs Substrate.

Published in:

Semiconductors, 2000, v. 34, n. 1, p. 119, doi. 10.1134/1.1187954

By:

Mikhrin, S. S.;
Zhukov, A. E.;
Kovsh, A. R.;
Maleev, N. A.;
Ustinov, V. M.;
Shernyakov, Yu. M.;
Kayander, I. N.;
Kondrat’eva, E. Yu.;
Livshits, D. A.;
Tarasov, I. S.;
Maksimov, M. V.;
Tsatsul’nikov, A. F.;
Ledentsov, N. N.;
Kop’ev, P. S.;
Bimberg, D.;
Alferov, Zh. I.

Publication type:

Article

Theoretical Examination of Some Thermodynamic Properties in In-Bi-Sn Liquid Alloy and its Sub-binary Systems.

Published in:

Journal of Electronic Materials, 2023, v. 52, n. 9, p. 6350, doi. 10.1007/s11664-023-10571-y

By:

Sah, Sanjay Kumar;
Jha, Indu Shekhar;
Koirala, Ishwar

Publication type:

Article

Dependence of the Photoluminescence of Hydrophilic CuInS2 Colloidal Quantum Dots on Cu-to-In Molar Ratios.

Published in:

Journal of Electronic Materials, 2019, v. 48, n. 1, p. 286, doi. 10.1007/s11664-018-6713-8

By:

Zhang, Chi;
Xia, Yong;
Lian, Linyuan;
Fu, Xiaoming;
Yin, Liping;
Zhang, Jianbing;
Luo, Wei;
Miao, Xiangshui;
Zhang, Daoli

Publication type:

Article

Electrical Properties of Indium Aluminum Zinc Oxide Thin Film Transistors.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 11, p. 6923, doi. 10.1007/s11664-018-6618-6

By:

Cheng, Tien-Hung;
Chang, Sheng-Po;
Chang, Shoou-Jinn

Publication type:

Article

Thermoelectric Properties of an Al-Doped In-Sn-Te-Based Alloy.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 5, p. 937, doi. 10.1007/s11664-010-1462-3

By:

Fu, Hong;
Ying, Pengzhan;
Cui, Jiaolin;
Yan, Yanming;
Zhang, Xiaojun

Publication type:

Article

Electrical and Optical Characterization of Melt-Grown Bulk InAsP Crystals.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 2, p. 103, doi. 10.1007/s11664-010-1432-9

By:

Wei, J.;
Barnes, J.;
Guha, S.;
Gonzalez, L.;
Yeo, Y.;
Hengehold, R.;
Rajagopalan, G.

Publication type:

Article

Electrical Conductivity of Graphene Composites with In and In-Ga Alloy.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1268, doi. 10.1007/s11664-010-1208-2

By:

Sruti, A.;
Jagannadham, K.

Publication type:

Article

Thermoelectric Properties of In0.3Ga0.7N Alloys.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1132, doi. 10.1007/s11664-009-0676-8

By:

Pantha, B. N.;
Dahal, R.;
Li, J.;
Lin, J. Y.;
Jiang, H. X.;
Pomrenke, G.

Publication type:

Article

Liquidus Projection and Solidification of the Sn-In-Cu Ternary Alloys.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 4, p. 498, doi. 10.1007/s11664-008-0380-0

By:

Shih-Kang Lin;
Ching-Feng Yang;
Shyr-Harn Wu;
Sinn-Wen Chen

Publication type:

Article

Formation condition of the icosahedral phase in rapidly quenched Ag–In–RE (rare earth) alloys.

Published in:

Philosophical Magazine, 2006, v. 86, n. 3-5, p. 435, doi. 10.1080/14786430500253984

By:

Iwano, S.;
Nishimoto, K.;
Tamura, R.;
Takeuchi, S.

Publication type:

Article

Direct Writing of Gallium-Indium Alloy for Stretchable Electronics.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 23, p. 3501, doi. 10.1002/adfm.201303220

By:

Boley, J. William;
White, Edward L.;
Chiu, George T.‐C.;
Kramer, Rebecca K.

Publication type:

Article

Improvement of viscoelastic damping by using manganese bronze with indium.

Published in:

Mechanics of Time-Dependent Materials, 2014, v. 18, n. 1, p. 217, doi. 10.1007/s11043-013-9223-3

By:

Jeeva, Lavanya;
Choi, Jae;
Lee, Taeyong

Publication type:

Article

Study of InAlN thin films deposited on silicon, ITO/PET, and ITO/GLASS substrates at room temperature for its possible use in solar cells.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 3, p. 1162, doi. 10.1007/s10854-021-07398-w

By:

Nieto, L. F. Mulcue;
Saldarriaga, W.;
de la Cruz, W.;
Restrepo, E.;
Ospina, M. S.;
Escobar, D.

Publication type:

Article

Electrochemical behaviour of lead-free Sn–0.7Cu–xIn solders alloys in 3.5 wt% NaCl solution.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 18, p. 23371, doi. 10.1007/s10854-021-06824-3

By:

Jaiswal, Dheeraj;
Singh, Vikrant;
Pathote, Dileep;
Behera, C. K.

Publication type:

Article