Works matching DE "IMPURITY distribution in semiconductors"

Results: 160

THE MONTE-CARLO SIMULATION OF TRANSPORT IN QUANTUM WELL GaAs/AlGaAs HETEROSTRUCTURE DOPED WITH SHALLOW DONORS UNDER IMPURITY BREAKDOWN.

Published in:

International Journal of Nanoscience, 2007, v. 6, n. 3/4, p. 253, doi. 10.1142/S0219581X0700447X

By:

GAVRILENKO, L. V.;
YA. ALESHKIN, V.;
DUBINOV, A. A.

Publication type:

Article

Microstructure and mechanical properties of Lead-free Sn–Cu solder composites prepared by rapid directional solidification.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 12, p. 1235, doi. 10.1007/s10854-007-9131-x

By:

Jun Shen;
Yongchang Liu;
Yajing Han;
Houxiu Gao

Publication type:

Article

Dielectric-Related R-Zero-Phonon Emission Line Shift of Cr[sup3+] in SrTiO&sub3;:Ca.

Published in:

Ferroelectrics, 2004, v. 304, n. 1, p. 83, doi. 10.1080/00150190490454611

By:

Trepakov, V.A.;
Kapphan, S.E.;
Bednorz, J.G.;
Gregora, I.;
Jastrabik, L.

Publication type:

Article

Microscopic Properties of Complex of Hydrogen and Pb-Vacancy in ABO 3 -Type Perovskite.

Published in:

Ferroelectrics, 2002, v. 268, n. 1, p. 17, doi. 10.1080/00150190211045

By:

Park, C.H.

Publication type:

Article

Impurity radiation from a tokamak plasma.

Published in:

Plasma Physics Reports, 2007, v. 33, n. 11, p. 906, doi. 10.1134/S1063780X07110037

By:

Morozov, D. Kh.;
Baronova, E. O.;
Senichenkov, I. Yu.

Publication type:

Article

One Possible Way to Affect the Impurity Influx into the Plasma of a Stellarator with Poloidal Slits in the Vacuum Wall.

Published in:

Plasma Physics Reports, 2001, v. 27, n. 12, p. 1011, doi. 10.1134/1.1426134

By:

Grekov, D. L.

Publication type:

Article

Level Anticrossing of Impurity States in Semiconductor Nanocrystals.

Published in:

Scientific Reports, 2014, p. 1, doi. 10.1038/srep06917

By:

Baimuratov, Anvar S.;
Rukhlenko, Ivan D.;
Turkov, Vadim K.;
Ponomareva, Irina O.;
Leonov, Mikhail Yu.;
Perova, Tatiana S.;
Berwick, Kevin;
Baranov, Alexander V.;
Fedorov, Anatoly V.

Publication type:

Article

Fe-doped SnO<sub>2</sub>: A Quantum-chemical Approach.

Published in:

Journal of Nano- & Electronic Physics, 2015, v. 7, n. 2, p. 02032-1

By:

Stashans, A.;
Puchaicela, P.

Publication type:

Article

The Asymmetry of the Distribution Density Volume Uncompensated Charge at the Metallurgical p-n Junction.

Published in:

Journal of Nano- & Electronic Physics, 2012, v. 4, n. 3, p. 3026-1

By:

Mazinov, A. S.;
Shevchenko, A. I.;
Bykov, M. A.

Publication type:

Article

An analysis of a kick-out diffusion mechanism with charge effects.

Published in:

Quarterly Journal of Mechanics & Applied Mathematics, 1998, v. 51, n. 4, p. 515, doi. 10.1093/qjmam/51.4.515

By:

Meere, MG

Publication type:

Article

Intense laser field effect on impurity states in a semiconductor quantum well: transition from the single to double quantum well potential.

Published in:

European Physical Journal B: Condensed Matter, 2011, v. 81, n. 4, p. 441, doi. 10.1140/epjb/e2011-20265-0

By:

Duque, C.;
Mora-Ramos, M.;
Kasapoglu, E.;
Sari, H.;
Sökmen, I.

Publication type:

Article

The hydrostatic pressure and temperature effects on a hydrogenic impurity in a spherical quantum dot.

Published in:

European Physical Journal B: Condensed Matter, 2011, v. 81, n. 1, p. 79, doi. 10.1140/epjb/e2011-10831-9

By:

Liang, S.;
Xie, W.

Publication type:

Article

Noise-created bistability and stochastic resonance of impurities diffusing in a semiconductor layer.

Published in:

European Physical Journal B: Condensed Matter, 2011, v. 79, n. 3, p. 371, doi. 10.1140/epjb/e2010-10799-x

By:

Asfaw, M.;
Aragie, B.;
Bekele, M.

Publication type:

Article

An investigation on the effect of impurity position on the binding energy of quantum box under electric field with pressure and temperature.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2018, v. 32, n. 13, p. -1, doi. 10.1142/S0217979218501540

By:

Yilmaz, S.;
Kirak, M.

Publication type:

Article

Electronic and optical properties of Cr-, B-doped, and (Cr, B)-codoped SrTiO<sub>3</sub>.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2017, v. 31, n. 9, p. -1, doi. 10.1142/S0217979217500643

By:

Wu, Jiao;
Huang, Wei-Qing;
Yang, Ke;
Wei, Zeng-Xi;
Peng, P.;
Huang, Gui-Fang

Publication type:

Article

Effect of weak disorder on the BCS-BEC crossover in a two-dimensional Fermi gas.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2017, v. 31, n. 9, p. -1, doi. 10.1142/S0217979217500667

By:

Khan, Ayan;
Tanatar, B.

Publication type:

Article

CARBON NANOTUBES AS A PERFECTLY CONDUCTING CYLINDER.

Published in:

International Journal of High Speed Electronics & Systems, 2003, v. 13, n. 3, p. 849, doi. 10.1142/S0129156403002058

By:

TSUNEYA ANDO, Siegfried

Publication type:

Article

The Impurity Optical Absorption and Conduction Band Structure in 6H-SiC.

Published in:

Semiconductors, 2001, v. 35, n. 11, p. 1242

By:

Gorban’, I. S.;
Krokhmal’, A. P.

Publication type:

Article

Physical Foundations of Metastable Impurity Center Reconstruction in Semiconductors.

Published in:

Semiconductors, 2001, v. 35, n. 11, p. 1223, doi. 10.1134/1.1418062

By:

Onopko, D. E.;
Ryskin, A. I.

Publication type:

Article

Effect of Bismuth Impurity on Carrier Density in PbSe:Bi:Se Epitaxial Layers.

Published in:

Semiconductors, 2001, v. 35, n. 11, p. 1254, doi. 10.1134/1.1418067

By:

Zykov, V. A.;
Gavrikova, T. A.;
Il’in, V. I.;
Nemov, S. A.;
Savintsev, P. V.

Publication type:

Article

The Effect of Various Types of Shallow Impurities and Their Concentration on Microhardness and Photomechanical Properties of Semiconductors.

Published in:

Semiconductors, 2001, v. 35, n. 4, p. 371, doi. 10.1134/1.1365176

By:

Gerasimov, A. B.;
Chiradze, G. D.

Publication type:

Article

Dipole Moments of Ligands and Stark Splitting of Levels of Rare-Earth Ions.

Published in:

Semiconductors, 2001, v. 35, n. 4, p. 398, doi. 10.1134/1.1365182

By:

Chumachkova, M. M.;
Roıtsin, A. B.

Publication type:

Article

Nickel Impurity Excitons and Photoinduced Lattice Distortion in ZnSe[sub 1 – ][sub y]S[sub y]:Ni and Zn[sub 1 – ][sub x]Cd[sub x]Se:Ni Solid Solutions.

Published in:

Semiconductors, 2001, v. 35, n. 2, p. 138, doi. 10.1134/1.1349919

By:

Sokolov, V. I.;
Starovoıtova, V. N.

Publication type:

Article

Quasi-Local Impurity States in Uniaxially Compressed p-Type Ge.

Published in:

Semiconductors, 2001, v. 35, n. 2, p. 132, doi. 10.1134/1.1349917

By:

Abramov, A. A.;
Tulupenko, V. N.;
Firsov, D. A.

Publication type:

Article

Surface Gettering of Background Impurities and Defects in GaAs Wafers.

Published in:

Semiconductors, 2001, v. 35, n. 2, p. 177, doi. 10.1134/1.1349927

By:

Vlasenko, L. S.;
Gorelenok, A. T.;
Emtsev, V. V.;
Kamanin, A. V.;
Poloskin, D. S.;
Shmidt, N. M.

Publication type:

Article

Tunneling via Impurity States Related to the X Valley in a Thin AlAs Barrier.

Published in:

Semiconductors, 2001, v. 35, n. 2, p. 199, doi. 10.1134/1.1349932

By:

Khanin, Yu. N.;
Novoselov, K. S.;
Vdovin, E. E.

Publication type:

Article

On the Theory of Photoionization of Deep-Level Impurity Centers in a Parabolic Quantum Well.

Published in:

Semiconductors, 2000, v. 34, n. 10, p. 1193, doi. 10.1134/1.1317582

By:

Krevchik, V. D.;
Zaıtsev, R. V.;
Evstifeev, V. V.

Publication type:

Article

The Influence of Electrically Inactive Impurities on the Formation of Donor Centers in Silicon Layers Implanted with Erbium.

Published in:

Semiconductors, 2000, v. 34, n. 5, p. 510, doi. 10.1134/1.1188016

By:

Aleksandrov, O. V.;
Zakhar’in, A. O.;
Sobolev, N. A.;
Nikolaev, Yu. A.

Publication type:

Article

Equilibrium Distributions of Shallow-Level Impurity and Potential in the Near-Surface Region of a Semiconductor in a Model with a Completely Depleted Layer.

Published in:

Semiconductors, 2000, v. 34, n. 4, p. 441, doi. 10.1134/1.1188004

By:

Gavrilovets, V. V.;
Bondarenko, V. B.;
Kudinov, Yu. A.;
Korablev, V. V.

Publication type:

Article

A Mössbauer Study of a Two-Electron Acceptor Impurity of Zinc in Silicon.

Published in:

Semiconductors, 2000, v. 34, n. 3, p. 269, doi. 10.1134/1.1187969

By:

Nasredinov, F. S.;
Seregin, N. P.;
Seregin, P. P.;
Bondarevskiı, S. I.

Publication type:

Article

Dopant impurity diffusion from polymer diffusants and its applications in semiconductor device technology. A review.

Published in:

Semiconductors, 1999, v. 33, n. 3, p. 265, doi. 10.1134/1.1187676

By:

Guk, E. G.;
Kamanin, A. V.;
Shmidt, N. M.;
Shuman, V. B.;
Yurre, T. A.

Publication type:

Article

Mechanical properties of pure and doped InP single crystals determined under local loading.

Published in:

Semiconductors, 1997, v. 31, n. 2, p. 139, doi. 10.1134/1.1187095

By:

Boyarskaya, Yu. S.;
Grabko, D. Z.;
Medinskaya, M. I.;
Palistrant, N. A.

Publication type:

Article

Far infrared study of local impurity modes of Boron-doped PbTe.

Published in:

Journal of Materials Science, 2012, v. 47, n. 5, p. 2384, doi. 10.1007/s10853-011-6057-8

By:

Nikolic, P.;
Paraskevopoulos, K.;
Zachariadis, G.;
Valasiadis, O.;
Zorba, T.;
Vujatovic, S.;
Nikolic, N.;
Aleksic, O.;
Ivetic, T.;
Cvetkovic, O.;
Blagojevic, V.;
Nikolic, M.

Publication type:

Article

Solid-state physics: Doping the undopable.

Published in:

Nature, 2005, v. 436, n. 7047, p. 32, doi. 10.1038/436032a

By:

Galli, Giulia

Publication type:

Article

ON VARIATION OF CHARGE CARRIER TRANSPORT IN p-n-JUNCTIONS AFTER OPTIMIZED IMPURITY DISTRIBUTIONS.

Published in:

Journal of Modern Technology & Engineering, 2021, v. 6, n. 2, p. 151

By:

Pankratov, E. L.

Publication type:

Article

The electric field dependence of a donor impurity in graded GaAs quantum wires.

Published in:

Applied Physics A: Materials Science & Processing, 2004, v. 78, n. 7, p. 1053, doi. 10.1007/s00339-003-2161-1

By:

Kasapoglu, E.;
Sari, H.;
Sokmen, I.

Publication type:

Article

On the migration of defects and impurities in microelectromechanical systems subject to a large number of light pulses.

Published in:

Applied Physics A: Materials Science & Processing, 2001, v. 73, n. 4, p. 425, doi. 10.1007/s003390100902

By:

Wautelet, M.;
Dauchot, J.P.;
Hecq, M.

Publication type:

Article

EMC3-EIRENE Simulation of Impurity Transport in Comparison with EUV Emission Measurements in the Stochastic Layer of LHD: Effects of Force Balance and Transport Coefficients.

Published in:

Contributions to Plasma Physics, 2016, v. 56, n. 6-8, p. 628, doi. 10.1002/ctpp.201610036

By:

Dai, S.;
Kobayashi, M.;
Kawamura, G.;
Morita, S.;
Oishi, T.;
Zhang, H. M.;
Huang, X.L.;
Feng, Y.;
Wang, D. Z.;
Suzuki, Y.;
the LHD experiment group

Publication type:

Article

Kinetic Modelling of the Plasma Recombination.

Published in:

Contributions to Plasma Physics, 2016, v. 56, n. 6-8, p. 698, doi. 10.1002/ctpp.201611004

By:

Tskhakaya, D.

Publication type:

Article

Modeling of Small-sized ELMs in Detached Divertor Plasmas.

Published in:

Contributions to Plasma Physics, 2016, v. 56, n. 6-8, p. 742, doi. 10.1002/ctpp.201610055

By:

Pigarov, A. Yu.;
Krasheninnikov, S.I.;
Hollmann, E. M.;
Rognlien, T. D.

Publication type:

Article

Development of the Backflow Model for Simplified Impurity Exhaust in Monte-Carlo Calculation.

Published in:

Contributions to Plasma Physics, 2014, v. 54, n. 4/6, p. 404, doi. 10.1002/ctpp.201410032

By:

Hoshino, K.;
Shimizu, K.;
Kawashima, H.;
Takizuka, T.;
Nakano, T.;
Ide, S.

Publication type:

Article

THE ELECTRIC FIELD DEPENDENCE OF THE PHOTOIONIZATION CROSS-SECTION OF SHALLOW DONOR IMPURITIES IN QUANTUM DOTS:: INFINITE AND FINITE MODEL.

Published in:

Surface Review & Letters, 2006, v. 13, n. 6, p. 747, doi. 10.1142/S0218625X06008797

By:

KASAPOGLU, E.;
SARI, H.;
YESILGUL, U.;
SÖKMEN, I.

Publication type:

Article

THE EFFECTS OF HYDROSTATIC PRESSURE AND APPLIED ELECTRIC FIELD ON SHALLOW DONOR IMPURITIES IN GaAs/GaAlAs GRADED QUANTUM WELL.

Published in:

Surface Review & Letters, 2005, v. 12, n. 2, p. 155, doi. 10.1142/S0218625X05006871

By:

Kasapoglu, E.;
Sari, H.;
Sökmen, I.

Publication type:

Article

FRACTAL ANALYSIS FOR CRYSTAL LAYER STRUCTURE AND IMPURITY DISTRIBUTION RESEARCH OF MELT CRYSTALLIZATION.

Published in:

Fractals, 2015, v. 23, n. 1, p. -1, doi. 10.1142/S0218348X15400022

By:

LU, DA-PENG;
LIU, YI;
HE, GAOHONG;
JIANG, XIAO-BIN

Publication type:

Article

Seebeck Coefficient in Nonparabolic Bulk Materials.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 5, p. 1221, doi. 10.1007/s11664-011-1610-4

By:

Bhattacharya, Sitangshu;
Mallik, Ramesh

Publication type:

Article

Effects of substitutional impurity Au and Si atoms on antiphase boundary energies in Ti3Al: A first principles study.

Published in:

Philosophical Magazine, 2010, v. 90, n. 29, p. 3919, doi. 10.1080/14786435.2010.502143

By:

Koizumi, Yuichiro;
Mizuno, Masataka;
Sugihara, Atsushi;
Minamino, Yoritoshi;
Shirai, Yasuharu

Publication type:

Article

Impurity quantum phase transitions.

Published in:

Philosophical Magazine, 2006, v. 86, n. 13/14, p. 1807, doi. 10.1080/14786430500070396

By:

Vojta, Matthias

Publication type:

Article

The effect of infrared plasmon on the performance of Si-based THz detectors.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 1, p. 839, doi. 10.1007/s10854-016-5598-7

By:

Zhu, He;
Xu, Jintao;
Zhu, Jiaqi;
Wang, Miao;
Wu, Huizhen;
Li, Ning;
Dai, Ning

Publication type:

Article

Effects of Sb substitution on structural and superconducting properties of Bi in BiPbSbSrCaCuO superconductor.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 8, p. 8670, doi. 10.1007/s10854-016-4888-4

By:

Çam, Ebru;
Kocabaş, Kemal

Publication type:

Article

Effects of ZnO additive on crystalline phase and microwave dielectric properties of 0.90AlO-0.10TiO ceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 3, p. 2687, doi. 10.1007/s10854-015-4078-9

By:

Lu, Xiaochi;
Huang, Baoyu;
Chen, Tao;
Fu, Zhenxiao;
Wang, Zhefei;
Wang, Lixi;
Zhang, Qitu

Publication type:

Article