MONOLITHICALLY INTEGRATED COPLANAR 75-GHz SILICON IMPATT OSCILLATOR.
- Published in:
- Microwave & Optical Technology Letters, 1988, v. 1, n. 4, p. 117, doi. 10.1002/mop.4650010402
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- Publication type:
- Article
Works matching DE "IMPATT diodes"
Results: 22
1
2
Simulation and Design of a Tunable Patch Antenna.
- Published in:
- Applied Computational Electromagnetics Society Journal, 2011, v. 26, n. 12, p. 1039
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- Publication type:
- Article
3
A JL-SDR-IMPATT Device with Improved Efficiency.
- Published in:
- Journal of Microwaves, Optoelectronics & Electromagnetic Applications, 2017, v. 16, n. 2, p. 323, doi. 10.1590/2179-10742017v16i2682
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- Publication type:
- Article
4
The generation of coherent submillimetre waves.
- Published in:
- Advances in Physics, 1976, v. 25, n. 3, p. 211, doi. 10.1080/00018737600101382
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- Publication type:
- Article
5
Effect of p- n junction overheating on degradation of silicon high-power pulsed IMPATT diodes.
- Published in:
- Semiconductors, 2011, v. 45, n. 2, p. 253, doi. 10.1134/S1063782611020047
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- Publication type:
- Article
6
Prospects of Impact Avalanche Transit-Time Diode Based on Chemical-Vapor-Deposited Diamond Substrate.
- Published in:
- Journal of Electronic Materials, 2019, v. 48, n. 2, p. 1044, doi. 10.1007/s11664-018-6821-5
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- Article
7
Effect of optical radiation on millimeter-wave characteristics and avalanche noise generation in double-drift impatt diodes based on opto-sensitive semiconductors.
- Published in:
- Microwave & Optical Technology Letters, 2002, v. 33, n. 4, p. 295, doi. 10.1002/mop.10300
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- Publication type:
- Article
8
Performance of millimeter-wave GaInP IMPATT device at elevated temperature.
- Published in:
- Microwave & Optical Technology Letters, 1999, v. 20, n. 6, p. 422, doi. 10.1002/(SICI)1098-2760(19990320)20:6<422::AID-MOP16>3.0.CO;2-0
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- Article
9
Sources of 1/F noise in gallium arsenide IMPATT diodes.
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- Technical Physics, 1997, v. 42, n. 8, p. 913, doi. 10.1134/1.1258754
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- Publication type:
- Article
10
Studies on Anisotype Si/Si<sub>1-x</sub>Ge<sub>x</sub> Heterojunction DDR IMPATTs: Efficient Millimeter-wave Sources at 94 GHz Window.
- Published in:
- IETE Journal of Research, 2013, v. 59, n. 4, p. 424, doi. 10.4103/0377-2063.118057
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- Article
11
Chirp Bandwidth Estimation of Pulsed IMPATT Oscillator at 94 GHz Window: A Simplified Approach.
- Published in:
- IETE Journal of Research, 2012, v. 58, n. 4, p. 266, doi. 10.4103/0377-2063.102304
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- Publication type:
- Article
12
A New mm-Wave GaAs∼Ga<sub>0.52</sub>In<sub>0.48</sub>P Heterojunction IMPATT Diode.
- Published in:
- IETE Journal of Research, 2011, v. 57, n. 4, p. 351, doi. 10.4103/0377-2063.86315
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- Publication type:
- Article
13
Noise Performance of 94 GHz Multiple Quantum Well Double-Drift Region IMPATT Sources.
- Published in:
- Journal of Active & Passive Electronic Devices, 2018, v. 13, n. 2/3, p. 195
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- Publication type:
- Article
14
Comparative Study of RF Performance and Avalanche Response Time of DDR IMPATTs Based on Group IV-IV and Group III-V Materials at W- Band.
- Published in:
- International Journal of Microwave & Optical Technology, 2018, v. 13, n. 1, p. 61
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- Publication type:
- Article
15
A Comparative Study On The Effect Of Optical Illumination On Different Semiconductor Material Based DDR IMPATT Diode In Ka Band.
- Published in:
- International Journal of Microwave & Optical Technology, 2017, v. 12, n. 2, p. 90
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- Publication type:
- Article
16
Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes.
- Published in:
- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 4, p. 465
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- Publication type:
- Article
17
Development and investigation of microwave radiation sources and detector sections using SBDs within the 220-400 GHz frequency range.
- Published in:
- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 4, p. 411
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- Publication type:
- Article
18
DRIFT--DIFFUSION VERSUS ENERGY MODEL FOR MILLIMETRE-WAVE IMPATT DIODES MODELLING.
- Published in:
- International Journal of Numerical Modelling, 1989, v. 2, n. 2, p. 61, doi. 10.1002/jnm.1660020202
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- Publication type:
- Article
19
Computer-aided numerical characterization and experimental studies for high-power operation of IMPATT oscillators.
- Published in:
- Microwave & Optical Technology Letters, 2005, v. 45, n. 3, p. 262, doi. 10.1002/mop.20790
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- Publication type:
- Article
20
Prospects of 4H-SiC Double Drift Region IMPATT Device as a Photo-Sensitive High-Power Source at 0.7 Terahertz Frequency Regime.
- Published in:
- Active & Passive Electronic Components, 2008, v. 2008, p. 1, doi. 10.1155/2008/275357
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- Publication type:
- Article
21
Local electrical activity of impact avalanche transit time diodes by the scanning transmission electron-beaminduced current technique.
- Published in:
- Philosophical Magazine Letters, 1999, v. 79, n. 2, p. 55, doi. 10.1080/095008399177543
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- Publication type:
- Article
22
THz Technology: An Overview.
- Published in:
- International Journal of High Speed Electronics & Systems, 2003, v. 13, n. 2, p. 351, doi. 10.1142/S0129156403001776
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- Publication type:
- Article