Works matching DE "III-V semiconductors"

Results: 13

Synthetic Strategies and Applications of GaN Nanowires.

Published in:

Advances in Condensed Matter Physics, 2014, p. 1, doi. 10.1155/2014/456163

By:

Guoquan Suo;
Shuai Jiang;
Juntao Zhang;
Jianye Li;
Meng He

Publication type:

Article

Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon.

Published in:

Semiconductors, 2016, v. 50, n. 11, p. 1421, doi. 10.1134/S1063782616110257

By:

Cirlin, G.;
Shtrom, I.;
Reznik, R.;
Samsonenko, Yu.;
Khrebtov, A.;
Bouravleuv, A.;
Soshnikov, I.

Publication type:

Article

High voltage and high current density vertical GaN power diodes.

Published in:

Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 13, p. 1170, doi. 10.1049/el.2016.1156

By:

Armstrong, A. M.;
Allerman, A. A.;
Fischer, A. J.;
King, M. P.;
van Heukelom, M. S.;
Moseley, M. W.;
Kaplar, R. J.;
Wierer, J. J.;
Crawford, M. H.;
Dickerson, J. R.

Publication type:

Article

W-band inductor compensated doubly balanced I/Q mixer.

Published in:

Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 13, p. 1177, doi. 10.1049/el.2016.0981

By:

Zhe Chen;
Fang Zhu

Publication type:

Article

Wide-band duplexer based on electrical balance of hybrid transformer having two notches.

Published in:

Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 13, p. 1151, doi. 10.1049/el.2016.1275

By:

Park, J.;
Jin, S.;
Moon, K.;
Kim, B.

Publication type:

Article

designed gaps.

Published in:: Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 19, p. 1473, doi. 10.1049/el.2015.3019
Publication type:: Article

Manipulating III-V Nanowire Transistor Performance via Surface Decoration of Metal-Oxide Nanoparticles.

Published in:

Advanced Materials Interfaces, 2017, v. 4, n. 12, p. 1, doi. 10.1002/admi.201700260

By:

Wang, Fengyun;
Yip, SenPo;
Dong, Guofa;
Xiu, Fei;
Song, Longfei;
Yang, Zaixing;
Li, Dapan;
Hung, Tak Fu;
Han, Ning;
Ho, Johnny C.

Publication type:

Article

A model of axial heterostructure formation in III-V semiconductor nanowires.

Published in:

Technical Physics Letters, 2016, v. 42, n. 3, p. 332, doi. 10.1134/S1063785016030196

By:

Dubrovskii, V.

Publication type:

Article

Brief Review of Surface Passivation on III-V Semiconductor.

Published in:

Crystals (2073-4352), 2018, v. 8, n. 5, p. 226, doi. 10.3390/cryst8050226

By:

Zhou, Lu;
Bo, Baoxue;
Yan, Xingzhen;
Wang, Chao;
Chi, Yaodan;
Yang, Xiaotian

Publication type:

Article

Economic competitiveness of III-V on silicon tandem one-sun photovoltaic solar modules in favorable future scenarios.

Published in:

Progress in Photovoltaics, 2017, v. 25, n. 1, p. 41, doi. 10.1002/pip.2808

By:

Bobela, David C.;
Gedvilas, Lynn;
Woodhouse, Michael;
Horowitz, Kelsey A. W.;
Basore, Paul A.

Publication type:

Article

III-Vs at scale: a PV manufacturing cost analysis of the thin film vapor-liquid-solid growth mode.

Published in:

Progress in Photovoltaics, 2016, v. 24, n. 6, p. 871, doi. 10.1002/pip.2740

By:

Zheng, Maxwell;
Horowitz, Kelsey;
Woodhouse, Michael;
Battaglia, Corsin;
Kapadia, Rehan;
Javey, Ali

Publication type:

Article

Hydrogen influence on the electrical properties of sputtered In N thin films.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2013, v. 210, n. 8, p. 1606, doi. 10.1002/pssa.201228477

By:

Sparvoli, Marina;
Mansano, Ronaldo D.;
Chubaci, José F. D.

Publication type:

Article

Investigation of Optical Interconnection by using Photonic Wire Bonding.

Published in:

Journal of Laser Micro / Nanoengineering, 2015, v. 10, n. 2, p. 148, doi. 10.2961/jlmn.2015.02.0007

By:

GU, ZhiChen;
AMEMIYA, Tomohiro;
ISHIKAWA, Atsushi;
ATSUMI, Yuki;
KANG, JoonHyun;
HIRATANI, Takuo;
HAYASHI, Yusuke;
SUZUKI, Junichi;
NISHIYAMA, Nobuhiko;
TANAKA, Takuo;
ARAI, Shigehisa

Publication type:

Article