Works matching DE "HOT electron transistors"

Results: 10

260-GHz differential amplifier in SiGe heterojunction bipolar transistor technology.

Published in:

Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 3, p. 194, doi. 10.1049/el.2016.3882

By:

Yoon, D.;
Seo, M.-G.;
Song, K.;
Kaynak, M.;
Tillack, B.;
Rieh, J.-S.

Publication type:

Article

Investigations of Hot-carrier-induced Degradation for 700 V n-LDMOS Transistor Under Different Stress Conditions.

Published in:

IETE Journal of Research, 2013, v. 59, n. 4, p. 410, doi. 10.4103/0377-2063.118061

By:

Chunwei Zhang;
Siyang Liu;
Weifeng Sun;
Tingting Huang;
Chaohui Yu

Publication type:

Article

Energy level control: toward an efficient hot electron transport.

Published in:

Scientific Reports, 2014, p. 1, doi. 10.1038/srep05983

By:

Xiao Jin;
Qinghua Li;
Yue Li;
Zihan Chen;
Tai-Huei Wei;
Xingdao He;
Weifu Sun

Publication type:

Article

Heteroepitaxial vertical perovskite hot-electron transistors down to the monolayer limit.

Published in:

Nature Communications, 2019, v. 10, n. 1, p. N.PAG, doi. 10.1038/s41467-019-13290-3

By:

Kim, Brian S. Y.;
Hikita, Yasuyuki;
Yajima, Takeaki;
Hwang, Harold Y.

Publication type:

Article

Prolonged Hot Electron Dynamics in Plasmonic-Metal/Semiconductor Heterostructures with Implications for Solar Photocatalysis.

Published in:

Angewandte Chemie, 2014, v. 126, n. 30, p. 8021, doi. 10.1002/ange.201404259

By:

DuChene, Joseph S.;
Sweeny, Brendan C.;
Johnston-Peck, Aaron C.;
Su, Dong;
Stach, Eric A.;
Wei, Wei David

Publication type:

Article

Prospective Performance of Graphene HEB for Ultrasensitive Detection of Sub-mm Radiation.

Published in:

Journal of Low Temperature Physics, 2014, v. 176, n. 3/4, p. 249, doi. 10.1007/s10909-014-1087-7

By:

Karasik, Boris;
McKitterick, Christopher;
Prober, Daniel

Publication type:

Article

Fabrication and Characterization of Graphene Heterostructures with Nitride Semiconductors for High Frequency Vertical Transistors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 10, p. 1, doi. 10.1002/pssa.201700653

By:

Giannazzo, Filippo;
Fisichella, Gabriele;
Greco, Giuseppe;
Schilirò, Emanuela;
Deretzis, Ioannis;
Lo Nigro, Raffaella;
La Magna, Antonino;
Roccaforte, Fabrizio;
Iucolano, Ferdinando;
Lo Verso, Stella;
Ravesi, Sebastiano;
Prystawko, Pawel;
Kruszewski, Piotr;
Leszczyński, Mike;
Dagher, Roy;
Frayssinet, Eric;
Michon, Adrien;
Cordier, Yvon

Publication type:

Article

Current Reduction Caused by the Quantum Coupling of Hot Electrons in AlGaN/GaN Transistors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 7, p. 1, doi. 10.1002/pssa.201701035

By:

Mao, Ling‐Feng

Publication type:

Article

Graphene integration with nitride semiconductors for high power and high frequency electronics.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 4, p. n/a, doi. 10.1002/pssa.201600460

By:

Giannazzo, F.;
Fisichella, G.;
Greco, G.;
La Magna, A.;
Roccaforte, F.;
Pecz, B.;
Yakimova, R.;
Dagher, R.;
Michon, A.;
Cordier, Y.

Publication type:

Article

Chemical vapor deposited graphene: From synthesis to applications.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2014, v. 211, n. 11, p. 2439, doi. 10.1002/pssa.201400049

By:

Kataria, S.;
Wagner, S.;
Ruhkopf, J.;
Gahoi, A.;
Pandey, H.;
Bornemann, R.;
Vaziri, S.;
Smith, A. D.;
Ostling, M.;
Lemme, M. C.

Publication type:

Article