Works matching DE "HOMOEPITAXY"

Results: 86

Chromatic aberration in homogeneous diameter expansion growth of AlN crystals by the PVT method.

Published in:

European Physical Journal: Special Topics, 2025, v. 234, n. 2, p. 347, doi. 10.1140/epjs/s11734-024-01388-9

By:

Qin, Zuoyan;
Li, Wenliang;
He, Guangze;
Tan, Jun;
Yin, Liying;
Ji, Jianhua;
Li, Baikui;
Sun, Zhenhua;
Wu, Honglei

Publication type:

Article

Chemical Cross-linking of Polypropylenes Towards New Shape Memory Polymers.

Published in:

Macromolecular Rapid Communications, 2015, v. 36, n. 8, p. 744, doi. 10.1002/marc.201400727

By:

Raidt, Thomas;
Hoeher, Robin;
Katzenberg, Frank;
Tiller, Joerg C.

Publication type:

Article

Metal‐Oxide Transistors: Coating Thickness Controls Crystallinity and Enables Homoepitaxial Growth of Ultra‐Thin‐Channel Blade‐Coated In2O3 Transistors (Adv. Electron. Mater. 11/2020).

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 11, p. 1, doi. 10.1002/aelm.202000354

By:

Kirmani, Ahmad R.;
Chen, Huilang;
Stafford, Christopher M.;
Bittle, Emily G.;
Richter, Lee J.

Publication type:

Article

Coating Thickness Controls Crystallinity and Enables Homoepitaxial Growth of Ultra‐Thin‐Channel Blade‐Coated In2O3 Transistors.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 11, p. 1, doi. 10.1002/aelm.202000354

By:

Kirmani, Ahmad R.;
Chen, Huilang;
Stafford, Christopher M.;
Bittle, Emily G.;
Richter, Lee J.

Publication type:

Article

Gypsum: From the Equilibrium to the Growth Shapes—Theory and Experiments.

Published in:

Minerals (2075-163X), 2024, v. 14, n. 11, p. 1175, doi. 10.3390/min14111175

By:

Aquilano, Dino;
Bruno, Marco;
Ghignone, Stefano

Publication type:

Article

Local Homoepitaxial Growth in Sputtered NiO Thin Films: An Effective Approach to Tune the Crystallization, Preferred Growth Orientation, and Electrical Properties.

Published in:

Physica Status Solidi - Rapid Research Letters, 2018, v. 12, n. 9, p. 1, doi. 10.1002/pssr.201800191

By:

Wang, Yong;
Ghanbaja, Jaafar;
Soldera, Flavio;
Boulet, Pascal;
Horwat, David;
Mücklich, Frank;
Pierson, Jean‐Francois

Publication type:

Article

Smart-cut-like laser slicing of GaN substrate using its own nitrogen.

Published in:

Scientific Reports, 2021, v. 11, n. 1, p. 1, doi. 10.1038/s41598-021-97159-w

By:

Tanaka, Atsushi;
Sugiura, Ryuji;
Kawaguchi, Daisuke;
Yui, Toshiki;
Wani, Yotaro;
Aratani, Tomomi;
Watanabe, Hirotaka;
Sena, Hadi;
Honda, Yoshio;
Igasaki, Yasunori;
Amano, Hiroshi

Publication type:

Article

Transmission Electron Microscopy-Based Analysis of Electrically Conductive Surface Defects in Large Area GaSb Homoepitaxial Diodes Grown Using Molecular Beam Epitaxy.

Published in:

Journal of Electronic Materials, 2014, v. 43, n. 4, p. 926, doi. 10.1007/s11664-014-3070-0

By:

Romero, O.S.;
Aragon, A.A.;
Rahimi, N.;
Shima, D.;
Addamane, S.;
Rotter, T.J.;
Mukherjee, S.;
Dawson, L.R.;
Lester, L.F.;
Balakrishnan, G.

Publication type:

Article

Quantitative Comparison Between Dislocation Densities in Offcut 4H-SiC Wafers Measured Using Synchrotron X-ray Topography and Molten KOH Etching.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 5, p. 794, doi. 10.1007/s11664-013-2527-x

By:

Wang, Huanhuan;
Sun, Shun;
Dudley, Michael;
Byrappa, Shayan;
Wu, Fangzhen;
Raghothamachar, Balaji;
Chung, Gil;
Sanchez, Edward;
Mueller, Stephan;
Hansen, Darren;
Loboda, Mark

Publication type:

Article

Exploring the use of switchback for mitigating homoepitaxial unidirectional grain growth and porosity in WAAM of aluminium alloys.

Published in:

International Journal of Advanced Manufacturing Technology, 2019, v. 104, n. 1-4, p. 1581, doi. 10.1007/s00170-019-03959-w

By:

Yehorov, Yurii;
da Silva, Leandro João;
Scotti, Américo

Publication type:

Article

Homoepitaxial Regrowth of AlGaN on AlGaN Templates Prepared via Chemical Mechanical Polishing and Its Application to UV‐B Laser Diodes.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400113

By:

Yamada, Ryoya;
Kondo, Ryosuke;
Miyake, Rintaro;
Nishibayasi, Toma;
Matsubara, Eri;
Imoto, Yoshinori;
Iwayama, Sho;
Takeuchi, Tetsuya;
Kamiyama, Satoshi;
Miyake, Hideto;
Iwaya, Motoaki

Publication type:

Article

Electrical Behavior of Vertical Pt/Au Schottky Diodes on GaN Homoepitaxy.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200841

By:

Dagher, Maroun;
Sonneville, Camille;
Brémond, Georges;
Planson, Dominique;
Frayssinet, Eric;
Cordier, Yvon;
Haas, Helge;
Iretki, Mohammed Reda;
Buckley, Julien;
Maurya, Vishwajeet;
Charles, Matthew;
Bluet, Jean-Marie

Publication type:

Article

Study of Dislocations in Homoepitaxially and Heteroepitaxially Grown AlN Layers.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 24, p. 1, doi. 10.1002/pssa.202000465

By:

Goto, Ken;
Takekawa, Nao;
Nagashima, Toru;
Yamamoto, Reo;
Pozina, Galia;
Dalmau, Rafael;
Schlesser, Raoul;
Collazo, Ramón;
Monemar, Bo;
Sitar, Zlatko;
Boćkowski, Michał;
Kumagai, Yoshinao

Publication type:

Article

High Crystallinity and Highly Relaxed Al0.60Ga0.40N Films Using Growth Mode Control Fabricated on a Sputtered AlN Template with High‐Temperature Annealing.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 14, p. 1, doi. 10.1002/pssa.201900868

By:

Teramura, Shohei;
Kawase, Yuta;
Sakuragi, Yusuke;
Iwayama, Sho;
Iwaya, Motoaki;
Takeuchi, Tetsuya;
Kamiyama, Satoshi;
Akasaki, Isamu;
Miyake, Hideto

Publication type:

Article

The effect of surface roughness of seed on the high-rate homoepitaxial growth of CVD single-crystal diamonds.

Published in:

Applied Physics A: Materials Science & Processing, 2023, v. 129, n. 6, p. 1, doi. 10.1007/s00339-023-06655-5

By:

Zhang, Yanyan;
Zhang, Dongliang;
Zhang, Libin;
Yang, Bo;
Shen, Shengnan;
Gan, Zhiyin

Publication type:

Article

Gallium nitride wafer slicing by a sub-nanosecond laser: effect of pulse energy and laser shot spacing.

Published in:

Applied Physics A: Materials Science & Processing, 2021, v. 127, n. 9, p. 1, doi. 10.1007/s00339-021-04808-y

By:

Sena, Hadi;
Tanaka, Atsushi;
Wani, Yotaro;
Aratani, Tomomi;
Yui, Toshiki;
Kawaguchi, Daisuke;
Sugiura, Ryuji;
Honda, Yoshio;
Igasaki, Yasunori;
Amano, Hiroshi

Publication type:

Article

Formation of pyramid-like nanostructures in MBE-grown Si films on Si(001).

Published in:

Applied Physics A: Materials Science & Processing, 2011, v. 102, n. 3, p. 731, doi. 10.1007/s00339-010-5974-8

By:

Galiana, N.;
Martin, P.;
Garzón, L.;
Rodríguez-Cañas, E.;
Munuera, C.;
Esteban-Betegón, F.;
Varela, M.;
Ocal, C.;
Alonso, M.;
Ruiz, A.

Publication type:

Article

Multifunctional Pd/MOFs@MOFs Confined Core‐Shell Catalysts with Wrinkled Surface for Selective Catalysis.

Published in:

Chemistry - An Asian Journal, 2021, v. 16, n. 22, p. 3743, doi. 10.1002/asia.202100922

By:

Chen, Min‐Jie;
Chang, Gang‐Gang;
Chen, Li‐Yan;
Huang, Ke‐Xin;
Pu, Chun;
Li, Dan;
Yao, Yao;
Li, Jia‐Xin;
Yang, Xiao‐Yu;
Chen, Banglin

Publication type:

Article

Interface control by homoepitaxial growth in pulsed laser deposited iron chalcogenide thin films.

Published in:

Scientific Reports, 2015, p. 16334, doi. 10.1038/srep16334

By:

Molatta, Sebastian;
Haindl, Silvia;
Trommler, Sascha;
Schulze, Michael;
Wurmehl, Sabine;
Hühne, Ruben

Publication type:

Article

ZnO nanowires array grown on Ga-doped ZnO single crystal for dye-sensitized solar cells.

Published in:

Scientific Reports, 2015, p. 11499, doi. 10.1038/srep11499

By:

Hu, Qichang;
Li, Yafeng;
Huang, Feng;
Zhang, Zhaojun;
Ding, Kai;
Wei, Mingdeng;
Lin, Zhang

Publication type:

Article

Crystalline Defects Induced during MPCVD Lateral Homoepitaxial Diamond Growth.

Published in:

Nanomaterials (2079-4991), 2018, v. 8, n. 10, p. 814, doi. 10.3390/nano8100814

By:

Lloret, Fernando;
Eon, David;
Bustarret, Etienne;
Araujo, Daniel

Publication type:

Article

The Optimizing Effect of Nitrogen Flow Ratio on the Homoepitaxial Growth of 4H-SiC Layers.

Published in:

Crystals (2073-4352), 2023, v. 13, n. 6, p. 935, doi. 10.3390/cryst13060935

By:

Yuan, Weilong;
Pei, Yicheng;
Guo, Ning;
Li, Yunkai;
Zhang, Xiuhai;
Liu, Xingfang

Publication type:

Article

A Review of Homoepitaxy of III-Nitride Semiconductors by Metal Organic Chemical Vapor Deposition and the Effects on Vertical Devices.

Published in:

Crystals (2073-4352), 2023, v. 13, n. 3, p. 387, doi. 10.3390/cryst13030387

By:

Hite, Jennifer K.

Publication type:

Article

THE INFLUENCE OF THE SURFACE ORIENTATION ON THE MORPHOLOGY DURING HOMOEPITAXIAL GROWTH OF NICKEL BY MOLECULAR DYNAMICS SIMULATION.

Published in:

Surface Review & Letters, 2017, v. 24, n. 2, p. -1, doi. 10.1142/S0218625X17500196

By:

HASSANI, A.;
MAKAN, A.;
SBIAAI, K.;
TABYAOUI, A.;
HASNAOUI, A.

Publication type:

Article

Step‐Edge Guided Homoepitaxy Enables Highly Reversible Zn Plating/Stripping.

Published in:

Angewandte Chemie, 2025, v. 137, n. 16, p. 1, doi. 10.1002/ange.202501176

By:

Chen, Shuang;
Luo, Zhen;
Xia, Yufan;
Wu, Xingxing;
Wang, Kebing;
Yan, Mi;
Pan, Hongge;
Bin Xu, Ben;
Jiang, Yinzhu

Publication type:

Article

Role of Stronger Interlayer van der Waals Coupling in Twin‐Free Molecular Beam Epitaxy of 2D Chalcogenides.

Published in:

Advanced Materials Interfaces, 2021, v. 8, n. 13, p. 1, doi. 10.1002/admi.202100438

By:

Mortelmans, Wouter;
De Smet, Karel;
Meng, Ruishen;
Houssa, Michel;
De Gendt, Stefan;
Heyns, Marc;
Merckling, Clement

Publication type:

Article

GaAs p- i- n structures for X-ray detectors grown on Ge and GaAs substrates.

Published in:

Technical Physics Letters, 2012, v. 38, n. 5, p. 399, doi. 10.1134/S1063785012050161

By:

Zhilyaev, Yu.;
Mikulik, D.;
Nasonov, A.;
Orlova, T.;
Panteleev, V.;
Poletaev, N.;
Fedorov, L.;
Shcheglov, M.

Publication type:

Article

Collective effects in the system of structural defects in homoepitaxial GaN grown on porous substrates.

Published in:

Technical Physics Letters, 2012, v. 38, n. 5, p. 412, doi. 10.1134/S1063785012050082

By:

Mynbaeva, M.;
Nikolaev, A.;
Sitnikova, A.;
Zolotareva, R.;
Mynbaev, K.

Publication type:

Article

Influence of Temperature and Flow Ratio on the Morphology and Uniformity of 4H-SiC Epitaxial Layers Growth on 150 mm 4° Off-Axis Substrates.

Published in:

Crystals (2073-4352), 2023, v. 13, n. 1, p. 62, doi. 10.3390/cryst13010062

By:

Tang, Zhuorui;
Gu, Lin;
Ma, Hongping;
Mao, Chaobin;
Wu, Sanzhong;
Zhang, Nan;
Huang, Jiyu;
Fan, Jiajie

Publication type:

Article

Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study.

Published in:

Crystals (2073-4352), 2020, v. 10, n. 2, p. 57, doi. 10.3390/cryst10020057

By:

Bollani, Monica;
Fedorov, Alexey;
Albani, Marco;
Bietti, Sergio;
Bergamaschini, Roberto;
Montalenti, Francesco;
Ballabio, Andrea;
Miglio, Leo;
Sanguinetti, Stefano

Publication type:

Article

Hydrothermal Crystal Growth of Piezoelectric α-Quartz Phase of AO2 (A = Ge, Si) and MXO4 (M = Al, Ga, Fe and X = P, As): A Historical Overview.

Published in:

Crystals (2073-4352), 2017, v. 7, n. 2, p. 38, doi. 10.3390/cryst7020038

By:

Cambon, Olivier;
Haines, Julien

Publication type:

Article

Mechanism and Structural Defects of Zinc Film Deposited on a Copper Substrate: A Study via Molecular Dynamics Simulations.

Published in:

Coatings (2079-6412), 2025, v. 15, n. 2, p. 174, doi. 10.3390/coatings15020174

By:

He, Xin;
Qin, Xiangge;
Zhan, Lan

Publication type:

Article

Stable Electron Concentration Si-doped β-Ga 2 O 3 Films Homoepitaxial Growth by MOCVD.

Published in:

Coatings (2079-6412), 2021, v. 11, n. 5, p. 589, doi. 10.3390/coatings11050589

By:

Jiao, Teng;
Li, Zeming;
Chen, Wei;
Dong, Xin;
Li, Zhengda;
Diao, Zhaoti;
Zhang, Yuantao;
Zhang, Baolin;
Qadri, Syed Burhanullah

Publication type:

Article

Molecular dynamics simulation of surface morphology during homoepitaxial growth of Copper.

Published in:

European Physical Journal - Applied Physics, 2019, v. 87, n. 3, p. 1, doi. 10.1051/epjap/2019190080

By:

Nunzi, Jean-Michel;
Bennacer, Rachid;
El Ganaoui, Mohammed;
El Jouad, Mohamed;
El Azrak, Hicham;
Hassani, Abdessamad;
Makan, Abdelhadi;
Eddiai, Fouad;
Sbiaai, Khalid;
Hasnaoui, Abdellatif

Publication type:

Article

Growth of Si on Si(1 1 1)-7×7 at room temperature under laser substrate excitation.

Published in:

European Physical Journal - Applied Physics, 2015, v. 69, n. 1, p. 10301-p1, doi. 10.1051/epjap/2014140126

By:

El-Kholy, Ibrahim;
Elsayed-Ali, Hani E.

Publication type:

Article

In Situ Observations of Templated Grain Growth in ( Na0.5 K0.5)0.98 Li0.02 NbO3 Piezoceramics: Texture Development and Template-Matrix Interactions.

Published in:

Journal of the American Ceramic Society, 2012, v. 95, n. 8, p. 2653, doi. 10.1111/j.1551-2916.2012.05268.x

By:

Tutuncu, Goknur;
Chang, Yunfei;
Poterala, Stephen;
Messing, Gary L.;
Jones, Jacob L.;
Roedel, J.

Publication type:

Article

Surface Morphology and Microstructure Evolution of Single Crystal Diamond during Different Homoepitaxial Growth Stages.

Published in:

Materials (1996-1944), 2021, v. 14, n. 20, p. 5964, doi. 10.3390/ma14205964

By:

Shao, Guoqing;
Wang, Juan;
Zhang, Shumiao;
Wang, Yanfeng;
Wang, Wei;
Wang, Hong-Xing

Publication type:

Article

Electronic and Crystallographic Examinations of the Homoepitaxially Grown Rubrene Single Crystals.

Published in:

Materials (1996-1944), 2020, v. 13, n. 8, p. 1978, doi. 10.3390/ma13081978

By:

Nakayama, Yasuo;
Iwashita, Masaki;
Kikuchi, Mitsuru;
Tsuruta, Ryohei;
Yoshida, Koki;
Gunjo, Yuki;
Yabara, Yusuke;
Hosokai, Takuya;
Koganezawa, Tomoyuki;
Izawa, Seiichiro;
Hiramoto, Masahiro

Publication type:

Article

Homoepitaxy Growth of Single Crystal Diamond under 300 torr Pressure in the MPCVD System.

Published in:

Materials (1996-1944), 2019, v. 12, n. 23, p. 3953, doi. 10.3390/ma12233953

By:

Wang, Xiwei;
Duan, Peng;
Cao, Zhenzhong;
Liu, Changjiang;
Wang, Dufu;
Peng, Yan;
Hu, Xiaobo

Publication type:

Article

Effect of Low Pressure on Surface Roughness and Morphological Defects of 4H-SiC Epitaxial Layers.

Published in:

Materials (1996-1944), 2016, v. 9, n. 9, p. 743, doi. 10.3390/ma9090743

By:

Jichao Hu;
Renxu Jia;
Bin Xin;
Bo Peng;
Yuehu Wang;
Yuming Zhang

Publication type:

Article

Computer studies on reflection high-energy electron diffraction from the growing surface of Ge(001).

Published in:

Journal of Applied Crystallography, 2013, v. 46, n. 4, p. 1024, doi. 10.1107/S0021889813012995

By:

Mitura, Zbigniew

Publication type:

Article

Berichtigung: Nanoscale Control of Homoepitaxial Growth on a Two‐Dimensional Zeolite.

Published in:

2018

By:

Shete, Meera;
Kumar, Manjesh;
Kim, Donghun;
Rangnekar, Neel;
Xu, Dandan;
Topuz, Berna;
Agrawal, Kumar Varoon;
Karapetrova, Evguenia;
Stottrup, Benjamin;
Al‐Thabaiti, Shaeel;
Basahel, Sulaiman;
Narasimharao, Katabathini;
Rimer, Jeffrey D.;
Tsapatsis, Michael

Publication type:

Correction Notice

Nanoscale Control of Homoepitaxial Growth on a Two-Dimensional Zeolite.

Published in:

Angewandte Chemie, 2017, v. 129, n. 2, p. 550, doi. 10.1002/ange.201607063

By:

Shete, Meera;
Kumar, Manjesh;
Kim, Donghun;
Rangnekar, Neel;
Xu, Dandan;
Topuz, Berna;
Agrawal, Kumar Varoon;
Karapetrova, Evguenia;
Stottrup, Benjamin;
Al ‐ Thabaiti, Shaeel;
Basahel, Sulaiman;
Narasimharao, Katabathini;
Rimer, Jeffrey D.;
Tsapatsis, Michael

Publication type:

Article

Stress control by micropits density variation in strained AlGaN/GaN/SiN/AlN/Si(111) heterostructures.

Published in:

Crystal Research & Technology, 2016, v. 51, n. 3, p. 225, doi. 10.1002/crat.201500276

By:

Szymański, Tomasz;
Wośko, Mateusz;
Paszkiewicz, Bogdan;
Serafińczuk, Jarosław;
Drzik, Milan;
Paszkiewicz, Regina

Publication type:

Article

Optical Properties of GGG Epitaxial Films Grown from PbO-B2O3-V2O5 Flux.

Published in:

Acta Physica Polonica: A, 2018, v. 133, n. 4, p. 954, doi. 10.12693/APhysPolA.133.954

By:

SYVOROTKA, I. I.;
SUGAK, D. YU.;
LUCHECHKO, A. P.;
ZHYDACHEVSKYY, YA. A.;
UBIZSKII, S. B.

Publication type:

Article

Diamond Diode Structures Based on Homoepitaxial Films.

Published in:

Journal of Communications Technology & Electronics, 2018, v. 63, n. 7, p. 828, doi. 10.1134/S1064226918070148

By:

Rodionov, N. B.;
Pal’, A. F.;
Bol’shakov, A. P.;
Ral’chenko, V. G.;
Khmel’nitskiy, R. A.;
Dravin, V. A.;
Malykhin, S. A.;
Altukhov, I. V.;
Kagan, M. S.;
Paprotskiy, S. K.

Publication type:

Article

Growth of Bulk Gallium Nitride Single Crystal by Sodium Flux Method: A Brief Review.

Published in:

Journal of Physical Science, 2019, v. 30, n. 2, p. 189, doi. 10.21315/jps2019.30.2.11

By:

Sin, Nurul Fatihah Nik;
Ibrahim, Kamarulazizi;
Zainal, Norzaini

Publication type:

Article

The Influence of Process Parameters on Hydrogen-Terminated Diamond and the Enhancement of Carrier Mobility.

Published in:

Materials (1996-1944), 2025, v. 18, n. 1, p. 112, doi. 10.3390/ma18010112

By:

Chen, Xingqiao;
Yang, Mingyang;
Mu, Yuanyuan;
Yang, Chengye;
Jia, Zhenglin;
Liu, Chaoping;
Li, He;
Jiang, Nan;
Nishimura, Kazuhito;
Guo, Liangchao;
Chee, Kuan W. A.;
Yuan, Qilong;
Li, Xiaocheng;
Song, Hui

Publication type:

Article

Influence of Carbon Source on the Buffer Layer for 4H-SiC Homoepitaxial Growth.

Published in:

Materials (1996-1944), 2024, v. 17, n. 11, p. 2612, doi. 10.3390/ma17112612

By:

Yang, Shangyu;
Guo, Ning;
Zhao, Siqi;
Li, Yunkai;
Wei, Moyu;
Zhang, Yang;
Liu, Xingfang

Publication type:

Article

Dual-Step Selective Homoepitaxy of Ge with Low Defect Density and Modulated Strain Based on Optimized Ge/Si Virtual Substrate.

Published in:

Materials (1996-1944), 2022, v. 15, n. 10, p. 3594, doi. 10.3390/ma15103594

By:

Xu, Buqing;
Du, Yong;
Wang, Guilei;
Xiong, Wenjuan;
Kong, Zhenzhen;
Zhao, Xuewei;
Miao, Yuanhao;
Wang, Yijie;
Lin, Hongxiao;
Su, Jiale;
Li, Ben;
Wu, Yuanyuan;
Radamson, Henry H.

Publication type:

Article