Works matching DE "HOLES (Electron deficiencies)"
1
- Inorganic Materials, 2012, v. 48, n. 3, p. 234, doi. 10.1134/S0020168512020197
- Stepanov, N.;
- Nalivkin, V.;
- Ivanova, L.;
- Granatkina, Yu.
- Article
2
- Inorganic Materials, 2011, v. 47, n. 8, p. 853, doi. 10.1134/S0020168511080012
- Article
3
- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800687
- Ricciardulli, Antonio Gaetano;
- Kotadiya, Naresh B.;
- Wetzelaer, Gert‐Jan A. H.;
- Blom, Paul W. M.;
- Yang, Sheng;
- Feng, Xinliang
- Article
4
- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800695
- Article
5
- Cogent Engineering, 2016, v. 3, n. 1, p. N.PAG, doi. 10.1080/23311916.2016.1270702
- John, Pretesh;
- Davis, Rahul;
- Zhou, Zude
- Article
6
- European Physical Journal D (EPJ D), 2009, v. 55, n. 3, p. 581, doi. 10.1140/epjd/e2009-00238-x
- Article
7
- Journal of Nanotechnology, 2011, p. 1, doi. 10.1155/2011/702130
- Yan Zhang;
- Jianqiang Yu;
- Hongwei Wang;
- Mengmeng Sun;
- Yuyu Bu;
- Deshuang Yu;
- Weibing Li
- Article
8
- Modern Physics Letters B, 2017, v. 31, n. 5, p. -1, doi. 10.1142/S0217984917500397
- Article
9
- Revista Colombiana de Física, 2007, v. 39, n. 2, p. 535
- García, L. F.;
- Marín, J. H.;
- Mikhailov, I. D.
- Article
10
- Revista Colombiana de Física, 2007, v. 39, n. 2, p. 547
- Ramos-Arteaga, S. M.;
- Porras-Montenegro, N.;
- Vazques-Fonseca, G. J.;
- Del Castillo-Mussot, M.
- Article
11
- Journal of Superconductivity & Novel Magnetism, 2013, v. 26, n. 5, p. 2073, doi. 10.1007/s10948-012-2085-0
- Marchevsky, M.;
- DeFeo, M.;
- Metlushko, V.;
- Higgins, M.;
- Bhattacharya, S.
- Article
12
- Journal of Superconductivity & Novel Magnetism, 2010, v. 23, n. 8, p. 1543, doi. 10.1007/s10948-010-0811-z
- Galvan, D.;
- Posada Amarillas, A.;
- Núñez-González, R.;
- Mejía, S.;
- José-Yacamán, M.
- Article
13
- Croatica Chemica Acta, 2013, v. 86, n. 4, p. 371, doi. 10.5562/cca2288
- Article
14
- Materials Science (0137-1339), 2005, v. 23, n. 4, p. 985
- ZARDAS, G. E.;
- YANNAKOPOULOS, P. H.;
- SYMEONIDES, CH. I.;
- CSABAY, O.;
- EUTHYMIOU, P. C.
- Article
15
- International Journal of RF & Microwave Computer-Aided Engineering, 2002, v. 12, n. 4, p. 320, doi. 10.1002/mmce.10030
- Serebryannikov, Andriy E.;
- Schünemann, Klaus F.
- Article
16
- Mathematical Notes, 2007, v. 81, n. 1/2, p. 140, doi. 10.1134/S0001434607010166
- Article
17
- Optics & Spectroscopy, 2012, v. 113, n. 4, p. 376, doi. 10.1134/S0030400X12100074
- Perlin, E.;
- Ivanov, A.;
- Popov, A.
- Article
18
- Optics & Spectroscopy, 2012, v. 113, n. 4, p. 383, doi. 10.1134/S0030400X12100086
- Perlin, E.;
- Ivanov, A.;
- Popov, A.
- Article
19
- Applied Computational Electromagnetics Society Journal, 2012, v. 27, n. 8, p. 630
- Qutubuddin, Khaja;
- Mustacoglu, Halid;
- Mautz, Joseph R.;
- Arvas, Ercument
- Article
20
- Instruments & Experimental Techniques, 2010, v. 53, n. 6, p. 877, doi. 10.1134/S0020441210060205
- Article
21
- Instruments & Experimental Techniques, 2007, v. 50, n. 5, p. 639, doi. 10.1134/S0020441207050028
- Meshkov, I.;
- Pavlov, V.;
- Sidorin, A.;
- Yakovenko, S.
- Article
22
- High Energy Chemistry, 2004, v. 38, n. 6, p. 420, doi. 10.1023/B:HIEC.0000048243.10924.fc
- Byakov, V. M.;
- Grafutin, V. I.;
- Ilyukhina, O. V.;
- Myasishcheva, G. G.;
- Nichiporov, F. G.;
- Stepanov, S. V.;
- Stepanova, O. P.;
- Funtikov, Yu. V.
- Article
23
- Applied Physics A: Materials Science & Processing, 2010, v. 98, n. 1, p. 239, doi. 10.1007/s00339-009-5382-0
- Bo Jiao;
- Zhaoxin Wu;
- Xingwei Yan;
- Xun Hou
- Article
24
- Applied Physics A: Materials Science & Processing, 2006, v. 83, n. 3, p. 435, doi. 10.1007/s00339-006-3567-3
- Novkovski, N.;
- Atanassova, E.
- Article
25
- Applied Physics A: Materials Science & Processing, 2006, v. 83, n. 3, p. 465, doi. 10.1007/s00339-006-3575-3
- Zhou, Y. C.;
- Zhou, J.;
- Zhao, J. M.;
- Zhang, S. T.;
- Zhan, Y. Q.;
- Wang, X. Z.;
- Wu, Y.;
- Ding, X. M.;
- Hou, X. Y.
- Article
26
- Applied Physics A: Materials Science & Processing, 2004, v. 79, n. 1, p. 65, doi. 10.1007/s00339-003-2504-y
- Peter, K.;
- Wietasch, H.;
- Peng, B.;
- Thelakkat, M.
- Article
27
- Applied Physics A: Materials Science & Processing, 1997, v. 64, n. 1, p. 83
- Article
28
- Hyperfine Interactions, 2009, v. 193, n. 1-3, p. 329, doi. 10.1007/s10751-009-0019-4
- Article
29
- Hyperfine Interactions, 2007, v. 179, n. 1-3, p. 73, doi. 10.1007/s10751-008-9673-1
- Damonte, L. C.;
- Donderis, V.;
- Hernández Fenollosa, M. A.
- Article
30
- Hyperfine Interactions, 2003, v. 146/147, n. 1-4, p. 337, doi. 10.1023/B:HYPE.0000004249.30972.f6
- Yamanaka, Nobuhiro;
- Kino, Yasushi
- Article
31
- Hyperfine Interactions, 2003, v. 146/147, n. 1-4, p. 197, doi. 10.1023/B:HYPE.0000004242.96973.0f
- Meshkov, I. N.;
- Sidorin, A. O.;
- Smirnov, A. V.;
- Trubnikov, G. V.
- Article
32
- Journal of Thermal Stresses, 2001, v. 24, n. 8, p. 725, doi. 10.1080/014957301300324873
- Han, Jianjun;
- Hasebe, Norio
- Article
33
- Chinese Journal of Chemistry, 2014, v. 32, n. 10, p. 1015, doi. 10.1002/cjoc.201400442
- Chung, Wai-Kin;
- Wong, Keith Man-Chung;
- Yam, Vivian Wing-Wah
- Article
34
- Modern Physics Letters A, 2009, v. 24, n. 24, p. 1937, doi. 10.1142/S0217732309031259
- GIACOSA, FRANCESCO;
- HOFMANN, RALF
- Article
35
- Modern Physics Letters A, 2004, v. 19, n. 10, p. 769
- Article
36
- Gold Bulletin, 2009, v. 42, n. 3, p. 195, doi. 10.1007/BF03214934
- Politano, Antonio;
- Chiarello, Gennaro
- Article
37
- International Journal of Theoretical Physics, 2013, v. 52, n. 3, p. 1007, doi. 10.1007/s10773-012-1413-2
- Article
38
- Canadian Journal of Physics, 2002, v. 80, n. 8, p. 837, doi. 10.1139/p02-048
- Coutinho, F.A.B.;
- Kiang, D.;
- Nogami, Y.;
- Tomio, Lauro
- Article
39
- Semiconductors, 2017, v. 51, n. 3, p. 329, doi. 10.1134/S1063782617030058
- Bloshkin, A.;
- Yakimov, A.;
- Timofeev, V.;
- Tuktamyshev, A.;
- Nikiforov, A.;
- Murashov, V.
- Article
40
- Semiconductors, 2016, v. 50, n. 7, p. 869, doi. 10.1134/S1063782616070113
- Kudryashov, A.;
- Kytin, V.;
- Lunin, R.;
- Kulbachinskii, V.;
- Banerjee, A.
- Article
41
- Semiconductors, 2015, v. 49, n. 10, p. 1302, doi. 10.1134/S1063782615100188
- Nemov, S.;
- Blagikh, N.;
- Allahkhah, A.;
- Ivanova, L.
- Article
42
- Semiconductors, 2015, v. 49, n. 10, p. 1311, doi. 10.1134/S1063782615100218
- Pokutnyi, S.;
- Kulchin, Yu.;
- Dzyuba, V.
- Article
43
- Semiconductors, 2015, v. 49, n. 10, p. 1332, doi. 10.1134/S1063782615100024
- Bakhadyrkhanov, M.;
- Isamov, S.;
- Iliev, Kh.;
- Kamalov, Kh.
- Article
44
- Semiconductors, 2015, v. 49, n. 2, p. 187, doi. 10.1134/S1063782615020128
- Kozlov, D.;
- Morozov, S.;
- Rumyantsev, V.;
- Tuzov, I.;
- Kudryavtsev, K.;
- Gavrilenko, V.
- Article
45
- Semiconductors, 2012, v. 46, n. 6, p. 773, doi. 10.1134/S1063782612060061
- Bazhenov, N.;
- Shilyaev, A.;
- Mynbaev, K.;
- Zegrya, G.
- Article
46
- Semiconductors, 2012, v. 46, n. 6, p. 786, doi. 10.1134/S1063782612060140
- Article
47
- Semiconductors, 2012, v. 46, n. 4, p. 519, doi. 10.1134/S106378261204015X
- Lyubutin, S.;
- Rukin, S.;
- Slovikovsky, B.;
- Tsyranov, S.
- Article
48
- Semiconductors, 2012, v. 46, n. 3, p. 382, doi. 10.1134/S1063782612030104
- Gassoumi, M.;
- Grimbert, B.;
- Gaquiere, C.;
- Maaref, H.
- Article
49
- Semiconductors, 2012, v. 46, n. 3, p. 298, doi. 10.1134/S1063782612030037
- Article
50
- Semiconductors, 2012, v. 46, n. 1, p. 56, doi. 10.1134/S1063782612010174
- Article