Study of scattering parameters of RFMEMS shunt switch with high-K dielectrics.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 12, p. 5546, doi. 10.1007/s10854-014-2342-z
- By:
- Publication type:
- Article
Works matching DE "HIGH-k dielectric thin films"
Results: 10
1
2
Quasi-analytical model-based performance analysis of dual material gate stack strained GAA FinFET.
- Published in:
- International Journal of Electronics Letters, 2020, v. 8, n. 3, p. 304, doi. 10.1080/21681724.2019.1600729
- By:
- Publication type:
- Article
3
Characterization of High-<i>k</i> Gate Dielectric with Amorphous Nanostructure.
- Published in:
- Journal of Electronic Materials, 2013, v. 42, n. 12, p. 3529, doi. 10.1007/s11664-013-2772-z
- By:
- Publication type:
- Article
4
HIGH-k GATE DIELECTRIC: AMORPHOUS Ta/La<sub>2</sub>O<sub>3</sub> FILMS GROWN ON Si AT LOW PRESSURE.
- Published in:
- Surface Review & Letters, 2014, v. 21, n. 6, p. 1450080-1, doi. 10.1142/S0218625X14500802
- By:
- Publication type:
- Article
5
Depth profiling analysis of HfON on SiON ultrathin films by parallel angle resolved x-ray photoelectron spectroscopy and medium energy ion scattering.
- Published in:
- Surface & Interface Analysis: SIA, 2016, v. 48, n. 7, p. 436, doi. 10.1002/sia.5917
- By:
- Publication type:
- Article
6
Direct Deposition of Uniform High-κ Dielectrics on Graphene.
- Published in:
- Scientific Reports, 2014, p. 1, doi. 10.1038/srep06448
- By:
- Publication type:
- Article
7
Gamma irradiation-induced effects on the electrical properties of HfO 2 -based MOS devices.
- Published in:
- Radiation Effects & Defects in Solids: Incorporating Plasma Techniques & Plasma Phenomena, 2016, v. 171, n. 1/2, p. 77, doi. 10.1080/10420150.2015.1135152
- By:
- Publication type:
- Article
8
Dielectric relaxation of high-<i>k</i> oxides.
- Published in:
- Nanoscale Research Letters, 2013, v. 8, n. 1, p. 1, doi. 10.1186/1556-276X-8-456
- By:
- Publication type:
- Article
9
Investigation of tunneling layer and inter-gate-dielectric engineered TaN floating gate memory.
- Published in:
- Integrated Ferroelectrics, 2016, v. 169, n. 1, p. 146, doi. 10.1080/10584587.2016.1165566
- By:
- Publication type:
- Article
10
Use of high-k encapsulation to improve mobility in trap-limited metal-oxide semiconductors.
- Published in:
- Physica Status Solidi (B), 2017, v. 254, n. 10, p. 1, doi. 10.1002/pssb.201700124
- By:
- Publication type:
- Article