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Study of scattering parameters of RFMEMS shunt switch with high-K dielectrics.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 12, p. 5546, doi. 10.1007/s10854-014-2342-z
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- Article
Direct Deposition of Uniform High-κ Dielectrics on Graphene.
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- Scientific Reports, 2014, p. 1, doi. 10.1038/srep06448
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- Article
Depth profiling analysis of HfON on SiON ultrathin films by parallel angle resolved x-ray photoelectron spectroscopy and medium energy ion scattering.
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- Surface & Interface Analysis: SIA, 2016, v. 48, n. 7, p. 436, doi. 10.1002/sia.5917
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- Article
Characterization of High-<i>k</i> Gate Dielectric with Amorphous Nanostructure.
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- Journal of Electronic Materials, 2013, v. 42, n. 12, p. 3529, doi. 10.1007/s11664-013-2772-z
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- Article
Dielectric relaxation of high-<i>k</i> oxides.
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- Nanoscale Research Letters, 2013, v. 8, n. 1, p. 1, doi. 10.1186/1556-276X-8-456
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- Article
Use of high-k encapsulation to improve mobility in trap-limited metal-oxide semiconductors.
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- Physica Status Solidi (B), 2017, v. 254, n. 10, p. 1, doi. 10.1002/pssb.201700124
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- Article
HIGH-k GATE DIELECTRIC: AMORPHOUS Ta/La<sub>2</sub>O<sub>3</sub> FILMS GROWN ON Si AT LOW PRESSURE.
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- Surface Review & Letters, 2014, v. 21, n. 6, p. 1450080-1, doi. 10.1142/S0218625X14500802
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- Article