Works matching DE "HIGH electron mobility transistor circuits"

Results: 24

Theoretical and experimental studies of the current-voltage and capacitance-voltage of HEMT structures and field-effect transistors.

Published in:

Semiconductors, 2016, v. 50, n. 12, p. 1574, doi. 10.1134/S1063782616120216

By:

Tarasova, E.;
Obolenskaya, E.;
Hananova, A.;
Obolensky, S.;
Zemliakov, V.;
Egorkin, V.;
Nezhenzev, A.;
Saharov, A.;
Zazul'nokov, A.;
Lundin, V.;
Zavarin, E.;
Medvedev, G.

Publication type:

Article

SiN layers for the in-situ passivation of GaN-based HEMT structures.

Published in:

Semiconductors, 2015, v. 49, n. 11, p. 1421, doi. 10.1134/S1063782615110251

By:

Yunin, P.;
Drozdov, Yu.;
Drozdov, M.;
Korolev, S.;
Okhapkin, A.;
Khrykin, O.;
Shashkin, V.

Publication type:

Article

Study of new designs for the InAlAs metamorphic buffer on GaAs substrates with distributed compensation of elastic deformations.

Published in:

Semiconductors, 2013, v. 47, n. 7, p. 997, doi. 10.1134/S1063782613070075

By:

Galiev, G.;
Pushkarev, S.;
Vasil'evskii, I.;
Klimov, E.;
Imamov, R.

Publication type:

Article

Process Uniformity and Challenges of AlGaN/GaN MIS-HEMTs on 200-mm Si (111) Substrates Fabricated with CMOS-Compatible Process and Integration.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 8, p. 2679, doi. 10.1007/s11664-015-3777-6

By:

Selvaraj, S.;
Kamath, A.;
Wang, W.;
Chen, Z.;
Win, K.;
Phua, T.;
Lo, G.

Publication type:

Article

TEMPERATURE DEPENDENT ANALYSIS OF HEMT'S BASED ON GAIN, POWER AND ROLLETTI STABILITY.

Published in:

Teknoloji, 2009, v. 12, n. 3, p. 201

By:

YILDIRIM, Remzi;
YAVUZCAN, Hüseyin Güçlü;
GÖKREM, Levent

Publication type:

Article

12.5 A/350 V AlGaN/GaN-on-Si MOS-HEMT with low specific on-resistance and minimal threshold hysteresis.

Published in:

Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 18, p. 1322, doi. 10.1049/el.2014.2020

By:

Shuang Liu;
Guohao Yu;
Kai Fu;
Shuxin Tan;
Zhili Zhang;
Chunhong Zeng;
Keyu Hou;
Wei Huang;
Yong Cai;
Baoshun Zhang;
Jinshe Yuan

Publication type:

Article

Filter Design Methodology and Application of GaN HEMTs in High-Frequency DC/DC Converter.

Published in:

IETE Journal of Research, 2014, v. 60, n. 3, p. 240, doi. 10.1080/03772063.2014.914696

By:

Cucak, D.;
Vasic, M.;
García, O.;
Oliver, J.;
Alou, P.;
Cobos, J. A.

Publication type:

Article

A physics-based potential and electric field model of a nanoscale rectangular high-K gate dielectric HEMT.

Published in:

Pramana: Journal of Physics, 2016, v. 86, n. 4, p. 723, doi. 10.1007/s12043-015-1100-y

By:

DAS, B;
GOSWAMI, R;
BHOWMICK, B

Publication type:

Article

MODIFICATION OF SILICON NITRIDE LAYERS BY THE LOW-TEMPERATURE ANNEAL IN ALGAN/SICBASED HIGH ELECTRON MOBILITY TRANSISTORS.

Published in:

Smart Nanocomposites, 2018, v. 8, n. 2, p. 155

By:

Evseenkov, Anton;
Tichomirov, Vladimir;
Tarasov, Sergey

Publication type:

Article

Sub-THz Imaging Using Non-Resonant HEMT Detectors.

Published in:

Sensors (14248220), 2018, v. 18, n. 2, p. 1, doi. 10.3390/s18020543

By:

Delgado-Notario, Juan A.;
Velazquez-Perez, Jesus E.;
Meziani, Yahya M.;
Fobelets, Kristel

Publication type:

Article

Investigation of the Performance of HEMT-Based NO, NO2 and NH3 Exhaust Gas Sensors for Automotive Antipollution Systems.

Published in:

Sensors (14248220), 2016, v. 16, n. 3, p. 273, doi. 10.3390/s16030273

By:

Halfaya, Yacine;
Bishop, Chris;
Soltani, Ali;
Sundaram, Suresh;
Aubry, Vincent;
Voss, Paul L.;
Salvestrini, Jean-Paul;
Ougazzaden, Abdallah

Publication type:

Article

A 2.4 GHz-Band 100 W GaN-HEMT High-Efficiency Power Amplifier for Microwave Heating.

Published in:

Journal of Electromagnetic Engineering & Science, 2015, v. 15, n. 2, p. 82, doi. 10.5515/JKIEES.2015.15.2.82

By:

Keigo Nakatani;
Toshio Ishizaki

Publication type:

Article

On Distortion in Digital Microwave Power Amplifiers.

Published in:

Frequenz, 2017, v. 71, n. 1/2, p. 11, doi. 10.1515/freq-2016-0096

By:

Al-Mozani, Dhamia;
Wentzel, Andreas;
Heinrich, Wolfgang

Publication type:

Article

Reference Plane Transformation of Continuous Mode Terminations for Broadband Power Amplifiers.

Published in:

Frequenz, 2014, v. 68, n. 9/10, p. 407, doi. 10.1515/freq-2013-0103

By:

Preis, Sebastian;
Gruner, Daniel;
Sayed, Ahmed;
Saad, Paul;
Boeck, Georg

Publication type:

Article

Investigation on the I–V Kink Effect in Large Signal Modeling of AlGaN/GaN HEMTs.

Published in:

Micromachines, 2018, v. 9, n. 11, p. 571, doi. 10.3390/mi9110571

By:

Mao, Shuman;
Xu, Yuehang

Publication type:

Article

A 3.1-10.6 GHz HEMT Distributed Amplifier for Ultra-Wideband Application.

Published in:

Majlesi Journal of Electrical Engineering, 2012, v. 6, n. 4, p. 63

By:

Ebrahimi, Sepideh;
MoradiKordalivand, Alishir

Publication type:

Article

Dynamic characteristics after bias stress of GaN HEMTs with field plate on free‐standing GaN substrate.

Published in:

Electronics Letters (Wiley-Blackwell), 2021, v. 57, n. 15, p. 591, doi. 10.1049/ell2.12201

By:

Ma, Qiang;
Ando, Yuji;
Wakejima, Akio

Publication type:

Article

Design of 0.8–2.7 GHz High Power Class-F Harmonic-Tuned Power Amplifier with Parasitic Compensation Circuit.

Published in:

Active & Passive Electronic Components, 2017, p. 1, doi. 10.1155/2017/2543917

By:

Cheng, Zhiqun;
Xuan, Xuefei;
Ke, Huajie;
Liu, Guohua;
Dong, Zhihua;
Gao, Steven

Publication type:

Article

New GaN Power-Electronics Packaging Solutions: A Thermal Analysis Using Raman Thermography.

Published in:

Journal of Microelectronic & Electronic Packaging, 2011, v. 8, n. 3, p. 110, doi. 10.4071/imaps.297

By:

Faqir, M.;
Manoi, A.;
Mrotzek, T.;
Knippscheer, S.;
Massiot, M.;
Buchta, M.;
Blanck, H.;
Rochette, S.;
Vendier, O.;
Kuball, M.

Publication type:

Article

GaN-HEMT asymmetric three-way Doherty power amplifier using GPD.

Published in:

IET Microwaves, Antennas & Propagation (Wiley-Blackwell), 2018, v. 12, n. 13, p. 2115, doi. 10.1049/iet-map.2018.5464

By:

Hyungmo Koo;
Hyunuk Kang;
Wooseok Lee;
Hwiseob Lee;
Kang-Yoon Lee;
Keum Cheol Hwang;
Youngoo Yang

Publication type:

Article

An Analytical Approach to the HEMT Noise Wave Model Parameter Determination.

Published in:

Serbian Journal of Electrical Engineering, 2017, v. 14, n. 1, p. 35, doi. 10.2298/SJEE1701035D

By:

Đorđević, Vladica;
Marinković, Zlatica;
Pronić-Rančić, Olivera;
Marković, Vera

Publication type:

Article

AlxGaN1‐x/AlN/GaN and DH‐AlxGaN1‐X/GaN HEMTs Threshold Voltage Model.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 1, p. N.PAG, doi. 10.1002/pssa.201800526

By:

Muhea, Wondwosen Eshetu;
Kermas, Nawel;
Yigletu, Fetene Mulugeta;
Cabré, Roger;
Iñiguez, Benjamin

Publication type:

Article

A 16 GS/s 3‐Bit DAC Core in GaN HEMT Technology.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 7, p. 1, doi. 10.1002/pssa.201700790

By:

Kong, Yuechan;
Zhang, Min;
Zhou, Jianjun;
Zhang, Youtao;
Zhang, Kai;
Peng, Daqing;
Li, Chuanhao

Publication type:

Article

Direct observation of nanometer-scale gate leakage paths in AlGaN/GaN and InAlN/AlN/GaN HEMT structures.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 883, doi. 10.1002/pssa.201532547

By:

Kotani, Junji;
Yamada, Atsushi;
Ishiguro, Tetsuro;
Tomabechi, Shuichi;
Nakamura, Norikazu

Publication type:

Article

Works matching DE "HIGH electron mobility transistor circuits"

Theoretical and experimental studies of the current-voltage and capacitance-voltage of HEMT structures and field-effect transistors.

SiN layers for the in-situ passivation of GaN-based HEMT structures.

Study of new designs for the InAlAs metamorphic buffer on GaAs substrates with distributed compensation of elastic deformations.

Process Uniformity and Challenges of AlGaN/GaN MIS-HEMTs on 200-mm Si (111) Substrates Fabricated with CMOS-Compatible Process and Integration.

TEMPERATURE DEPENDENT ANALYSIS OF HEMT'S BASED ON GAIN, POWER AND ROLLETTI STABILITY.

12.5 A/350 V AlGaN/GaN-on-Si MOS-HEMT with low specific on-resistance and minimal threshold hysteresis.

Filter Design Methodology and Application of GaN HEMTs in High-Frequency DC/DC Converter.

A physics-based potential and electric field model of a nanoscale rectangular high-K gate dielectric HEMT.

MODIFICATION OF SILICON NITRIDE LAYERS BY THE LOW-TEMPERATURE ANNEAL IN ALGAN/SICBASED HIGH ELECTRON MOBILITY TRANSISTORS.

Sub-THz Imaging Using Non-Resonant HEMT Detectors.

Investigation of the Performance of HEMT-Based NO, NO<sub>2</sub> and NH<sub>3</sub> Exhaust Gas Sensors for Automotive Antipollution Systems.

A 2.4 GHz-Band 100 W GaN-HEMT High-Efficiency Power Amplifier for Microwave Heating.

On Distortion in Digital Microwave Power Amplifiers.

Reference Plane Transformation of Continuous Mode Terminations for Broadband Power Amplifiers.

Investigation on the I–V Kink Effect in Large Signal Modeling of AlGaN/GaN HEMTs.

A 3.1-10.6 GHz HEMT Distributed Amplifier for Ultra-Wideband Application.

Dynamic characteristics after bias stress of GaN HEMTs with field plate on free‐standing GaN substrate.

Design of 0.8–2.7 GHz High Power Class-F Harmonic-Tuned Power Amplifier with Parasitic Compensation Circuit.

New GaN Power-Electronics Packaging Solutions: A Thermal Analysis Using Raman Thermography.

GaN-HEMT asymmetric three-way Doherty power amplifier using GPD.

An Analytical Approach to the HEMT Noise Wave Model Parameter Determination.

Al<sub>x</sub>GaN<sub>1‐x</sub>/AlN/GaN and DH‐Al<sub>x</sub>GaN<sub>1‐X</sub>/GaN HEMTs Threshold Voltage Model.

A 16 GS/s 3‐Bit DAC Core in GaN HEMT Technology.

Direct observation of nanometer-scale gate leakage paths in AlGaN/GaN and InAlN/AlN/GaN HEMT structures.