Works matching DE "HIGH electron mobility transistor circuits"
Results: 24
Design of 0.8–2.7 GHz High Power Class-F Harmonic-Tuned Power Amplifier with Parasitic Compensation Circuit.
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- Active & Passive Electronic Components, 2017, p. 1, doi. 10.1155/2017/2543917
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A 3.1-10.6 GHz HEMT Distributed Amplifier for Ultra-Wideband Application.
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- Majlesi Journal of Electrical Engineering, 2012, v. 6, n. 4, p. 63
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A 2.4 GHz-Band 100 W GaN-HEMT High-Efficiency Power Amplifier for Microwave Heating.
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- Journal of Electromagnetic Engineering & Science, 2015, v. 15, n. 2, p. 82, doi. 10.5515/JKIEES.2015.15.2.82
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Investigation on the I–V Kink Effect in Large Signal Modeling of AlGaN/GaN HEMTs.
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- Micromachines, 2018, v. 9, n. 11, p. 571, doi. 10.3390/mi9110571
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MODIFICATION OF SILICON NITRIDE LAYERS BY THE LOW-TEMPERATURE ANNEAL IN ALGAN/SICBASED HIGH ELECTRON MOBILITY TRANSISTORS.
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- Smart Nanocomposites, 2018, v. 8, n. 2, p. 155
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Dynamic characteristics after bias stress of GaN HEMTs with field plate on free‐standing GaN substrate.
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- Electronics Letters (Wiley-Blackwell), 2021, v. 57, n. 15, p. 591, doi. 10.1049/ell2.12201
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New GaN Power-Electronics Packaging Solutions: A Thermal Analysis Using Raman Thermography.
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- Journal of Microelectronic & Electronic Packaging, 2011, v. 8, n. 3, p. 110, doi. 10.4071/imaps.297
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Theoretical and experimental studies of the current-voltage and capacitance-voltage of HEMT structures and field-effect transistors.
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- Semiconductors, 2016, v. 50, n. 12, p. 1574, doi. 10.1134/S1063782616120216
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SiN layers for the in-situ passivation of GaN-based HEMT structures.
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- Semiconductors, 2015, v. 49, n. 11, p. 1421, doi. 10.1134/S1063782615110251
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Study of new designs for the InAlAs metamorphic buffer on GaAs substrates with distributed compensation of elastic deformations.
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- Semiconductors, 2013, v. 47, n. 7, p. 997, doi. 10.1134/S1063782613070075
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GaN-HEMT asymmetric three-way Doherty power amplifier using GPD.
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- IET Microwaves, Antennas & Propagation (Wiley-Blackwell), 2018, v. 12, n. 13, p. 2115, doi. 10.1049/iet-map.2018.5464
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12.5 A/350 V AlGaN/GaN-on-Si MOS-HEMT with low specific on-resistance and minimal threshold hysteresis.
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- Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 18, p. 1322, doi. 10.1049/el.2014.2020
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TEMPERATURE DEPENDENT ANALYSIS OF HEMT'S BASED ON GAIN, POWER AND ROLLETTI STABILITY.
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- Teknoloji, 2009, v. 12, n. 3, p. 201
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Filter Design Methodology and Application of GaN HEMTs in High-Frequency DC/DC Converter.
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- IETE Journal of Research, 2014, v. 60, n. 3, p. 240, doi. 10.1080/03772063.2014.914696
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Sub-THz Imaging Using Non-Resonant HEMT Detectors.
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- Sensors (14248220), 2018, v. 18, n. 2, p. 1, doi. 10.3390/s18020543
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Investigation of the Performance of HEMT-Based NO, NO<sub>2</sub> and NH<sub>3</sub> Exhaust Gas Sensors for Automotive Antipollution Systems.
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- Sensors (14248220), 2016, v. 16, n. 3, p. 273, doi. 10.3390/s16030273
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A physics-based potential and electric field model of a nanoscale rectangular high-K gate dielectric HEMT.
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- Pramana: Journal of Physics, 2016, v. 86, n. 4, p. 723, doi. 10.1007/s12043-015-1100-y
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Process Uniformity and Challenges of AlGaN/GaN MIS-HEMTs on 200-mm Si (111) Substrates Fabricated with CMOS-Compatible Process and Integration.
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- Journal of Electronic Materials, 2015, v. 44, n. 8, p. 2679, doi. 10.1007/s11664-015-3777-6
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An Analytical Approach to the HEMT Noise Wave Model Parameter Determination.
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- Serbian Journal of Electrical Engineering, 2017, v. 14, n. 1, p. 35, doi. 10.2298/SJEE1701035D
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On Distortion in Digital Microwave Power Amplifiers.
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- Frequenz, 2017, v. 71, n. 1/2, p. 11, doi. 10.1515/freq-2016-0096
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Reference Plane Transformation of Continuous Mode Terminations for Broadband Power Amplifiers.
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- Frequenz, 2014, v. 68, n. 9/10, p. 407, doi. 10.1515/freq-2013-0103
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Al<sub>x</sub>GaN<sub>1‐x</sub>/AlN/GaN and DH‐Al<sub>x</sub>GaN<sub>1‐X</sub>/GaN HEMTs Threshold Voltage Model.
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- Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 1, p. N.PAG, doi. 10.1002/pssa.201800526
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A 16 GS/s 3‐Bit DAC Core in GaN HEMT Technology.
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- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 7, p. 1, doi. 10.1002/pssa.201700790
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Direct observation of nanometer-scale gate leakage paths in AlGaN/GaN and InAlN/AlN/GaN HEMT structures.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 883, doi. 10.1002/pssa.201532547
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