Works matching DE "HETEROJUNCTION field effect transistors"

Results: 30

Gamma induced effects on structural, optical and electrical properties of n-TiO/p-Si heterojunction.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 21, p. 16314, doi. 10.1007/s10854-017-7537-7

By:

Ali, Syed

Publication type:

Article

Noise Performance of Heterojunction DDR MITATT Devices Based on Si ~ Si1-xGex at W-Band.

Published in:

Active & Passive Electronic Components, 2013, p. 1, doi. 10.1155/2013/720191

By:

Banerjee, Suranjana;
Acharyya, Aritra;
Banerjee, J. P.

Publication type:

Article

BaxSr1-x TiO3/pc-Si HETEROJUNCTION.

Published in:

Armenian Journal of Physics, 2013, v. 6, n. 4, p. 177

By:

BUNIATYAN, V.;
HUCK, C.;
POGHOSSIAN, A.;
AROUTIOUNIAN, V. M.;
SCHOENING, M. J.

Publication type:

Article

Substrate resistivity influence on silicon-germanium phototransistor performance.

Published in:

Electronics Letters (Wiley-Blackwell), 2019, v. 55, n. 11, p. 656, doi. 10.1049/el.2019.0203

By:

Tegegne, Z. G.;
Nanni, J.;
Viana, C.;
Tartarini, G.;
Polleux, J.-L.

Publication type:

Article

Thin-film heterojunction field-effect transistors with multiple subthreshold swings for large-area/flexible electronics and displays.

Published in:

Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 8, p. 570, doi. 10.1049/el.2016.4597

By:

Hekmatshoar, B.

Publication type:

Article

Effect of SiO2 Surface Passivation on the Performance of GaN Polarization Superjunction Heterojunction Field Effect Transistors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 4, p. 1, doi. 10.1002/pssa.202300199

By:

Du, Yangming;
Madathil, Sankara Narayanan Ekkanath;
Kawai, Hiroji;
Yagi, Shuichi;
Narui, Hironobu

Publication type:

Article

DC and analogue/radio frequency performance optimisation of heterojunction double-gate tunnel field-effect transistor.

Published in:

Micro & Nano Letters (Wiley-Blackwell), 2016, v. 11, n. 8, p. 407, doi. 10.1049/mnl.2015.0596

By:

Ahish, Shylendra;
Sharma, Dheeraj;
Kumar, Yernad Balachandra Nithin;
Vasantha, Moodabettu Harishchandra

Publication type:

Article

A 2.4 GHz-Band 250 W, 60% Feedback-Type GaN-HFET Oscillator Using Imbalanced Coupling Resonator for Use in the Microwave Oven.

Published in:

Applied Sciences (2076-3417), 2019, v. 9, n. 14, p. 2887, doi. 10.3390/app9142887

By:

Ikeda, Hikaru;
Itoh, Yasushi

Publication type:

Article

Improve the n-type performance in organic heterojunction transistors by controlling thickness of copper phthalocyanine.

Published in:

European Physical Journal - Applied Physics, 2015, v. 70, n. 2, p. 20102-p1, doi. 10.1051/epjap/2015150149

By:

Jianlin Zhou;
Xiaoqing Shen;
Zhen Wang;
Shengdong Hu;
Wei Huang;
Xinge Yu;
Ping Gan

Publication type:

Article

Investigation of In0.7Ga0.3As/Ga0.5As0.5Sb-Based Heterojunction TFET with Ferroelectric Gate Dielectric for Performance and Reliability.

Published in:

Journal of Circuits, Systems & Computers, 2024, v. 33, n. 9, p. 1, doi. 10.1142/S0218126624501561

By:

Verma, Priyanka;
Kumar, Satyendra

Publication type:

Article

Modification of hybrid active bilayer for enhanced efficiency and stability in planar heterojunction colloidal quantum dot photovoltaics.

Published in:

Nanoscale Research Letters, 2013, v. 8, n. 1, p. 1, doi. 10.1186/1556-276X-8-488

By:

Heo, Seung Jin;
Yoon, Seokhyun;
Oh, Sang Hoon;
Kim, Hyun Jae

Publication type:

Article

Synergetic scattering of SiO2 and Ag nanoparticles for light-trapping enhancement in organic bulk heterojunction.

Published in:

Journal of Nanoparticle Research, 2018, v. 20, n. 2, p. 0, doi. 10.1007/s11051-017-4118-x

By:

Yang, Huan;
Ding, Qiuyu;
Li, Ben Q.;
Jiang, Xinbing;
Zhang, Manman

Publication type:

Article

Operation Mechanism of a MoS2/BP Heterojunction FET.

Published in:

Nanomaterials (2079-4991), 2018, v. 8, n. 10, p. 797, doi. 10.3390/nano8100797

By:

Lim, Sung Kwan;
Kang, Soo Cheol;
Yoo, Tae Jin;
Lee, Sang Kyung;
Hwang, Hyeon Jun;
Lee, Byoung Hun

Publication type:

Article

MOCVD-grown β-Ga 2 O 3 as a Gate Dielectric on AlGaN/GaN-Based Heterojunction Field Effect Transistor.

Published in:

Crystals (2073-4352), 2023, v. 13, n. 2, p. 231, doi. 10.3390/cryst13020231

By:

Hasan, Samiul;
Jewel, Mohi Uddin;
Crittenden, Scott R.;
Lee, Dongkyu;
Avrutin, Vitaliy;
Özgür, Ümit;
Morkoç, Hadis;
Ahmad, Iftikhar

Publication type:

Article

TCAD Simulation Study of ESD Behavior of InGaAs/InP Heterojunction Tunnel FETs.

Published in:

Crystals (2073-4352), 2020, v. 10, n. 11, p. 1059, doi. 10.3390/cryst10111059

By:

Zhu, Zhihua;
Yang, Zhaonian;
Zhang, Yingtao;
Fan, Xiaomei;
Liou, Juin Jei;
Fan, Wenbing

Publication type:

Article

Performance Analysis of a Steep-Slope Bi-channel GaSb-GaAs Extended Source Tunnel Field Effect Transistor With Enhanced Band to Band Tunneling Current.

Published in:

Journal of Applied Research in Electrical Engineering, 2023, v. 2, n. 2, p. 206, doi. 10.22055/jaree.2024.44844.1082

By:

Ahangari, Zahra

Publication type:

Article

Efficient inverted polymer solar cells employing favourable molecular orientation.

Published in:

Nature Photonics, 2015, v. 9, n. 6, p. 403, doi. 10.1038/nphoton.2015.84

By:

Vohra, Varun;
Kawashima, Kazuaki;
Kakara, Takeshi;
Koganezawa, Tomoyuki;
Osaka, Itaru;
Takimiya, Kazuo;
Murata, Hideyuki

Publication type:

Article

Modelling the threshold voltage of p-channel enhancement-mode GaN heterostructure field-effect transistors.

Published in:

IET Power Electronics (Wiley-Blackwell), 2018, v. 11, n. 4, p. 675, doi. 10.1049/iet-pel.2017.0438

By:

Kumar, Ashwani;
De Souza, Maria Merlyne

Publication type:

Article

Optoelectronic Properties of Hexagonal Boron Nitride Shielded Molybdenum Diselenide/Black-Phosphorus Based Heterojunction Field Effect Transistor.

Published in:

Coatings (2079-6412), 2022, v. 12, n. 4, p. 445, doi. 10.3390/coatings12040445

By:

Abderrahmane, Abdelkader;
Woo, Changlim;
Ko, Pil-Ju

Publication type:

Article

Interface trap charges associated reliability analysis of Si/Ge heterojunction dopingless TFET.

Published in:

IET Circuits, Devices & Systems (Wiley-Blackwell), 2021, v. 15, n. 5, p. 424, doi. 10.1049/cds2.12037

By:

Sharma, Suruchi;
Basu, Rikmantra;
Kaur, Baljit

Publication type:

Article

Progress of Graphene–Silicon Heterojunction Photovoltaic Devices.

Published in:

Advanced Materials Interfaces, 2018, v. 5, n. 24, p. N.PAG, doi. 10.1002/admi.201801520

By:

Huang, Kun;
Yu, Xuegong;
Cong, Jingkun;
Yang, Deren

Publication type:

Article

A THEORETICAL INVESTIGATION OF THE ELECTRICAL PROPERTIES OF ZnMgO/ZnO HETEROJUNCTION FIELD EFFECT TRANSISTOR.

Published in:

Modern Physics Letters B, 2013, v. 27, n. 23, p. 1350170-1, doi. 10.1142/S0217984913501704

By:

AMIRABBASI, MOHAMMAD

Publication type:

Article

Solid-State Power Density Enabling Unprecedented EMP Capabilities.

Published in:

Microwave Journal, 2020, v. 63, n. 12, p. 70

By:

Marr, Bo;
Dower, Bill

Publication type:

Article

Small Signal Parameter Extraction of III-V Heterojunction Surrounding Gate Tunnel Field Effect Transistor.

Published in:

Journal of Nano- & Electronic Physics, 2017, v. 9, n. 4, p. 04004-1, doi. 10.21272/jnep.9(4).04004

By:

Vijh, Manjula;
Gupta, R. S.;
Pandey, Sujata

Publication type:

Article

Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 1, p. 40

By:

Golenkov, A. G.;
Zhuravlev, K. S.;
Gumenjuk-Sichevska, J. V.;
Lysiuk, I. O.;
Sizov, F. F.

Publication type:

Article

Double Gaussian Distribution of Barrier Heights, Interface States, and Current Transport Mechanisms in Au/BiNaTiO-BaTiO/ n-GaN MIS Structure.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 1, p. 549, doi. 10.1007/s11664-014-3481-y

By:

Rajagopal Reddy, V.;
Manjunath, V.;
Janardhanam, V.;
Leem, Chang-Hyun;
Choi, Chel-Jong

Publication type:

Article

Analytical modeling of surface potential, capacitance and drain current of heterojunction TFET.

Published in:

Applied Physics A: Materials Science & Processing, 2020, v. 126, n. 10, p. 1, doi. 10.1007/s00339-020-03945-0

By:

Kaur, Sarabjeet;
Raman, Ashish;
Sarin, Rakesh Kumar

Publication type:

Article

A Novel L-Gate InGaAs/GaAsSb TFET with Improved Performance and Suppressed Ambipolar Effect.

Published in:

Micromachines, 2022, v. 13, n. 9, p. 1474, doi. 10.3390/mi13091474

By:

Ma, Boyang;
Chen, Shupeng;
Wang, Shulong;
Han, Tao;
Zhang, Hao;
Yin, Chenyu;
Chen, Yaolin;
Liu, Hongxia

Publication type:

Article

Investigation of AlGaN/GaN HFET and VO2 Thin Film Based Deflection Transducers Embedded in GaN Microcantilevers.

Published in:

Micromachines, 2020, v. 11, n. 9, p. 875, doi. 10.3390/mi11090875

By:

Bayram, Ferhat;
Gajula, Durga;
Khan, Digangana;
Koley, Goutam

Publication type:

Article

Design and Investigation of the High Performance Doping-Less TFET with Ge/Si0.6Ge0.4/Si Heterojunction.

Published in:

Micromachines, 2019, v. 10, n. 6, p. 424, doi. 10.3390/mi10060424

By:

Han, Tao;
Liu, Hongxia;
Chen, Shupeng;
Wang, Shulong;
Li, Wei

Publication type:

Article

Works matching DE "HETEROJUNCTION field effect transistors"

Gamma induced effects on structural, optical and electrical properties of n-TiO/p-Si heterojunction.

Noise Performance of Heterojunction DDR MITATT Devices Based on Si ~ Si<sub>1-x</sub>Ge<sub>x</sub> at W-Band.

Ba<sub>x</sub>Sr<sub>1-x</sub> TiO<sub>3</sub>/pc-Si HETEROJUNCTION.

Substrate resistivity influence on silicon-germanium phototransistor performance.

Thin-film heterojunction field-effect transistors with multiple subthreshold swings for large-area/flexible electronics and displays.

Effect of SiO<sub>2</sub> Surface Passivation on the Performance of GaN Polarization Superjunction Heterojunction Field Effect Transistors.

DC and analogue/radio frequency performance optimisation of heterojunction double-gate tunnel field-effect transistor.

A 2.4 GHz-Band 250 W, 60% Feedback-Type GaN-HFET Oscillator Using Imbalanced Coupling Resonator for Use in the Microwave Oven.

Improve the n-type performance in organic heterojunction transistors by controlling thickness of copper phthalocyanine.

Investigation of In0.7Ga0.3As/Ga0.5As0.5Sb-Based Heterojunction TFET with Ferroelectric Gate Dielectric for Performance and Reliability.

Modification of hybrid active bilayer for enhanced efficiency and stability in planar heterojunction colloidal quantum dot photovoltaics.

Synergetic scattering of SiO<sub>2</sub> and Ag nanoparticles for light-trapping enhancement in organic bulk heterojunction.

Operation Mechanism of a MoS2/BP Heterojunction FET.

MOCVD-grown β-Ga 2 O 3 as a Gate Dielectric on AlGaN/GaN-Based Heterojunction Field Effect Transistor.

TCAD Simulation Study of ESD Behavior of InGaAs/InP Heterojunction Tunnel FETs.

Performance Analysis of a Steep-Slope Bi-channel GaSb-GaAs Extended Source Tunnel Field Effect Transistor With Enhanced Band to Band Tunneling Current.

Efficient inverted polymer solar cells employing favourable molecular orientation.

Modelling the threshold voltage of p-channel enhancement-mode GaN heterostructure field-effect transistors.

Optoelectronic Properties of Hexagonal Boron Nitride Shielded Molybdenum Diselenide/Black-Phosphorus Based Heterojunction Field Effect Transistor.

Interface trap charges associated reliability analysis of Si/Ge heterojunction dopingless TFET.

Progress of Graphene–Silicon Heterojunction Photovoltaic Devices.

A THEORETICAL INVESTIGATION OF THE ELECTRICAL PROPERTIES OF ZnMgO/ZnO HETEROJUNCTION FIELD EFFECT TRANSISTOR.

Solid-State Power Density Enabling Unprecedented EMP Capabilities.

Small Signal Parameter Extraction of III-V Heterojunction Surrounding Gate Tunnel Field Effect Transistor.

Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs.

Double Gaussian Distribution of Barrier Heights, Interface States, and Current Transport Mechanisms in Au/BiNaTiO-BaTiO/ n-GaN MIS Structure.

Analytical modeling of surface potential, capacitance and drain current of heterojunction TFET.

A Novel L-Gate InGaAs/GaAsSb TFET with Improved Performance and Suppressed Ambipolar Effect.

Investigation of AlGaN/GaN HFET and VO2 Thin Film Based Deflection Transducers Embedded in GaN Microcantilevers.

Design and Investigation of the High Performance Doping-Less TFET with Ge/Si0.6Ge0.4/Si Heterojunction.