Works matching DE "HETEROJUNCTION bipolar transistors"
Results: 168
2W HBT Power Amplifier Module with Dual Second Harmonic Suppression Technique.
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- Sensors (14248220), 2025, v. 25, n. 4, p. 1231, doi. 10.3390/s25041231
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- Article
Charge Photogeneration for a Series of Thiazolo-Thiazole Donor Polymers Blended with the Fullerene Electron Acceptors PCBM and ICBA.
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- Advanced Functional Materials, 2013, v. 23, n. 26, p. 3286, doi. 10.1002/adfm.201203148
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- Article
Low-cost InP-InGaAs PIN-HBT-based OEIC for up to 20 Gb/s optical communication systems.
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- IET Optoelectronics (Wiley-Blackwell), 2019, v. 13, n. 3, p. 144, doi. 10.1049/iet-opt.2018.5032
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- Article
Investigation of the mechanism of transport across the poly/monocrystalline silicon interface in polysilicon-emitter bipolar transistors based on variations in the interface treatment process.
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- Turkish Journal of Electrical Engineering & Computer Sciences, 2019, v. 27, n. 5, p. 3923, doi. 10.3906/elk-1811-116
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- Article
Class-E GaAs HBT power amplifier with passive linearization scheme for mobile wireless communications.
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- Turkish Journal of Electrical Engineering & Computer Sciences, 2014, v. 22, n. 5, p. 1210, doi. 10.3906/elk-1212-43
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- Article
Single Event Effect Analysis of SiGe Low Noise Amplifier.
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- Electronics / Elektronika (1450-5843), 2021, v. 25, n. 2, p. 57, doi. 10.53314/ELS2125057B
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- Article
Editor’s Column.
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- Electronics / Elektronika (1450-5843), 2021, v. 25, n. 2, p. 37, doi. 10.53314/ELS2125037K
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- Article
Tailoring Photovoltage Response at SrRuO<sub>3</sub>/SrTiO<sub>3</sub> Heterostructures.
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- Advanced Materials Interfaces, 2016, v. 3, n. 22, p. n/a, doi. 10.1002/admi.201600527
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- Article
Noise Parameter Analysis of SiGe HBTs for Different Sizes in the Breakdown Region.
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- Active & Passive Electronic Components, 2016, p. 1, doi. 10.1155/2016/8506507
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- Article
Highly biomimetic spiking neuron using SiGe heterojunction bipolar transistors for energy-efficient neuromorphic systems.
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- Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-58962-3
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- Article
Effect of Trench Isolation on the Self-heating Phenomenon in Advanced Radio Frequency SiGe Heterojunction Bipolar Transistor.
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- Journal of Nano- & Electronic Physics, 2021, v. 13, n. 1, p. 01021-1, doi. 10.21272/jnep.13(1).01021
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- Article
Analysis of Self-heating of a SiGe HBT Designed for RF Applications According to the Percentage of Germanium.
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- Journal of Nano- & Electronic Physics, 2020, v. 12, n. 6, p. 06001-1, doi. 10.21272/jnep.12(6).06001
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- Article
EXPERIMENTAL CHARACTERIZATION AND MODELING ANALYSIS ON NPN AIGaN/GaN HBT WITH HIGH IDEALITY FACTOR IN BOTH COLLECTOR AND BASE CURRENT.
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- Surface Review & Letters, 2012, v. 19, n. 4, p. 1250043-1, doi. 10.1142/S0218625X12500436
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- Article
Peer-Reviewed Literature of Interest to Failure Analysis: Cornucopia of power, wide band, package, system, process, yield, test, and case studies.
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- Electronic Device Failure Analysis, 2023, v. 25, n. 4, p. 52
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- Article
ISTFA 2022: PREVIEW.
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- Electronic Device Failure Analysis, 2022, v. 24, n. 3, p. 41
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- Article
The DOTFIVE Project.
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- Microwave Journal, 2012, v. 55, n. 1, p. 51
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- Article
European Researchers Drive Semiconductor Technology.
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- Microwave Journal, 2012, v. 55, n. 1, p. 51
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- Article
Au‐TiO<sub>2</sub>‐ZnO sandwich‐structured composite films with enhanced ultraviolet‐light photocatalytic activity.
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- Micro & Nano Letters (Wiley-Blackwell), 2021, v. 16, n. 12, p. 601, doi. 10.1049/mna2.12088
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- Article
SiC/Si heterojunction VDMOS breaking silicon limit by breakdown point transfer technology.
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- Micro & Nano Letters (Wiley-Blackwell), 2018, v. 13, n. 1, p. 96, doi. 10.1049/mnl.2017.0444
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- Article
A Wideband H-Band Image Detector Based on SiGe HBT Technology.
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- Journal of Electromagnetic Engineering & Science, 2015, v. 15, n. 1, p. 59, doi. 10.5515/JKIEES.2015.15.1.59
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- Article
완전집적형 임피던스 변환 다중권선 90° 커플러의.
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- Journal of Korean Institute of Electromagnetic Engineering & Science / Han-Guk Jeonjapa Hakoe Nonmunji, 2022, v. 33, n. 11, p. 829, doi. 10.5515/KJKIEES.2022.33.11.829
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- Article
Single-Shot Readout Performance of Two Heterojunction-Bipolar-Transistor Amplification Circuits at Millikelvin Temperatures.
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- Scientific Reports, 2019, v. 9, n. 1, p. N.PAG, doi. 10.1038/s41598-019-52868-1
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- Article
SILICON-GERMANIUM HBT TECHNOLOGY AND APPLICATIONS: A REVIEW.
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- i-Manager's Journal on Electronics Engineering, 2017, v. 8, n. 1, p. 35, doi. 10.26634/jele.8.1.13837
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- Article
SOI 基横向 SiGe HBT 高频功率性能改善技术.
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- Journal of Beijing University of Technology, 2022, v. 48, n. 12, p. 1280, doi. 10.11936/bjutxb2021070007
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- Article
Cryogenic amplification of image-charge detection for readout of quantum states of electrons on liquid helium.
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- Journal of Low Temperature Physics, 2021, v. 202, n. 5/6, p. 456, doi. 10.1007/s10909-020-02552-w
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- Article
Fabrication of Si heterojunction solar cells using P-doped Si nanocrystals embedded in SiN<sub>x</sub> films as emitters.
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- Nanoscale Research Letters, 2013, v. 8, n. 1, p. 1, doi. 10.1186/1556-276X-8-457
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- Article
A High Efficiency 1.8W Power Amplifier for Wireless Communications.
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- Electronics & Electrical Engineering, 2014, v. 20, n. 8, p. 30, doi. 10.5755/j01.eee.20.8.2949
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- Article
InP HBT Technology: Advantages, Applications and Future Challenges.
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- Microwave Journal, 2023, v. 66, n. 6, p. 18
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- Article
InP + CMOS Heterogeneous Integration for The Next Generation of Wireless.
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- Microwave Journal, 2022, v. 65, n. 11, p. 50
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- Article
NEW PRODUCTS.
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- 2021
- Publication type:
- Product Review
Gamma Irradiation-Induced Degradation of the Collector-Emitter Saturation Voltage in InGaP/GaAs Single Heterojunction Bipolar Transistors.
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- Microwave Journal, 2021, v. 64, n. 2, p. 70
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- Article
28 and 38 GHz Colpitts Oscillator MMICs With Low Phase Noise, High-Power and High DC-to-RF Efficiency.
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- Microwave Journal, 2020, v. 63, n. 12, p. 94
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- Article
Modeling of InP HBTs with an Improved Keysight HBT Model.
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- Microwave Journal, 2019, v. 62, n. 7, p. 56
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- Article
A Ka-Band Low Phase Noise VCO Implemented in 1 µm GaAs HBT Technology.
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- Microwave Journal, 2018, v. 61, n. 11, p. 82
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- Article
A Monolithic U-Band InP HBT Stacked Power Amplifier With On-Chip Active Biasing.
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- Microwave Journal, 2018, v. 61, n. 9, p. 40
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- Article
A Monolithic U-Band InP HBT Stacked Power Amplifier With On-Chip Active Biasing.
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- Microwave Journal, 2018, p. 40
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- Article
New Symbolically Defined Model for InP Heterojunction Bipolar Transistors.
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- Microwave Journal, 2018, v. 61, n. 7, p. 72
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- Article
A 20 GHz Low Phase Noise Push-Push VCO in InGaP GaAs HBT Technology.
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- Microwave Journal, 2018, v. 61, n. 5, p. 102
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- Article
Progress in three‐terminal heterojunction bipolar transistor solar cells.
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- Progress in Photovoltaics, 2022, v. 30, n. 8, p. 843, doi. 10.1002/pip.3536
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- Article
On the Coupling Imbalance of the UWB BLC in the 5G Low Noise Amplifier Design.
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- Applied Computational Electromagnetics Society Journal, 2022, v. 37, n. 10, p. 986, doi. 10.13052/2022.ACES.J.370908
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- Article
On the Coupling Imbalance of the UWB BLC in the 5G Low Noise Amplifier Design.
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- Applied Computational Electromagnetics Society Journal, 2022, v. 37, n. 9, p. 986, doi. 10.13052/2022.ACES.J.370908
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- Article
A three-dimensional multiphysics modeling of thin-film amorphous silicon solar cells.
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- Energy Science & Engineering, 2015, v. 3, n. 6, p. 520, doi. 10.1002/ese3.100
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- Article
Fabrication and characteristics of double heterojunction bipolar transistor based on p-CuO/n-Si heterojunction.
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- Applied Nanoscience, 2022, v. 12, n. 11, p. 3637, doi. 10.1007/s13204-022-02545-z
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- Article
Editorial for the Special Issue on "Nanodevices for Microwave and Millimeter Wave Applications".
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- 2020
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- Publication type:
- Editorial
Methodology of Noise Flatness Based on Network Quality Factor in RF Wideband Applications.
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- Circuits, Systems & Signal Processing, 2020, v. 39, n. 9, p. 4499, doi. 10.1007/s00034-020-01380-3
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- Article
Simulation of Lead-Free Heterojunction CsGeI 2 Br/CsGeI 3 -Based Perovskite Solar Cell Using SCAPS-1D.
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- Solar, 2023, v. 3, n. 3, p. 458, doi. 10.3390/solar3030025
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- Article
Doherty power amplifier with simplified out‐of‐phase power splitter for 5G applications.
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- Electronics Letters (Wiley-Blackwell), 2023, v. 59, n. 13, p. 1, doi. 10.1049/ell2.12875
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- Article
Heterojunction bipolar transistors with a planar‐type extended base as a hydrogen‐sensitive sensor.
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- Electronics Letters (Wiley-Blackwell), 2022, v. 58, n. 22, p. 837, doi. 10.1049/ell2.12614
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- Article
A temperature‐compensated linear GaAs HBT power amplifier for small‐cell applications in −25 to 125∘C$^\circ \rm C$ lunar environment.
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- Electronics Letters (Wiley-Blackwell), 2022, v. 58, n. 18, p. 684, doi. 10.1049/ell2.12574
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- Article
106-GHz bandwidth InP DHBT linear driver with a 3-V<sub>ppdiff</sub> swing at 80 GBd in PAM-4.
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- Electronics Letters (Wiley-Blackwell), 2020, v. 56, n. 14, p. 691, doi. 10.1049/el.2020.0654
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- Article