Works matching DE "HETEROJUNCTION bipolar transistors"

Results: 172

Heavy Ions Induced Single-Event Transient in SiGe-on-SOI HBT by TCAD Simulation.

Published in:

Micromachines, 2025, v. 16, n. 5, p. 532, doi. 10.3390/mi16050532

By:

Long, Yuedecai;
Aierken, Abuduwayiti;
Liu, Xuefei;
Liu, Mingqiang;
Gao, Changsong;
Wang, Gang;
Wang, Degui;
Majumdar, Sandip;
Xuan, Yundong;
Liu, Mengxin;
Bi, Jinshun

Publication type:

Article

Efficient UV photodetector based on heterojunction of n-ZnO nanorods/ p-diamond film.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 15, p. 11172, doi. 10.1007/s10854-017-6904-8

By:

Wan, Yongbiao;
Gao, Shiyong;
Li, Lin;
Zhang, Jiejing;
Fan, Huaiyun;
Jiao, Shujie;
Wang, Jinzhong;
Yu, Qingjiang;
Wang, Dongbo

Publication type:

Article

Synthesis of well-dispersed TiO nanorods and their application in hybrid ultraviolet photodetectors.

Published in:

Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 4, p. 1220, doi. 10.1007/s10854-012-0909-0

By:

Han, Yangang;
Wu, Linlin;
Gu, Hang;
Chen, Hongbo;
Zhang, Zheng

Publication type:

Article

Au‐TiO2‐ZnO sandwich‐structured composite films with enhanced ultraviolet‐light photocatalytic activity.

Published in:

Micro & Nano Letters (Wiley-Blackwell), 2021, v. 16, n. 12, p. 601, doi. 10.1049/mna2.12088

By:

Jian, Aoqun;
Li, Wanghao;
Wang, Meiling;
Jia, Huaping;
Sang, Shengbo

Publication type:

Article

Microwave Flexible Electronics Directly Transformed from Foundry‐Produced, Multilayered Monolithic Integrated Circuits.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101350

By:

Qin, Guoxuan;
Jung, Yei Hwan;
Zhang, Huilong;
Jiang, Ningyue;
Ma, Pingxi;
Stetson, Scott;
Racanelli, Marco;
Ma, Zhenqiang

Publication type:

Article

Heterojunction Bipolar Transistor: 2D Material‐Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification (Adv. Electron. Mater. 3/2019).

Published in:

2019

By:

Lee, Geonyeop;
Kim, Jihyun;
Pearton, Stephen J.;
Ren, Fan

Publication type:

Cover Art

2D Material‐Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 3, p. N.PAG, doi. 10.1002/aelm.201800745

By:

Lee, Geonyeop;
Kim, Jihyun;
Pearton, Stephen J.;
Ren, Fan

Publication type:

Article

Hot Carrier Effects on High Frequency Characteristics of SiGe HBTs.

Published in:

International Journal of Electronics Letters, 2024, v. 12, n. 3, p. 270, doi. 10.1080/21681724.2023.2267207

By:

Alex, Ann Mary;
Jacob, Jobymol

Publication type:

Article

Cap layer effect in DC and RF characteristics of InP based n-p-n metamorphic δ-doped heterojunction bipolar transistor.

Published in:

International Journal of Electronics Letters, 2022, v. 10, n. 3, p. 308, doi. 10.1080/21681724.2021.1941280

By:

Jena, M. R.;
Diwarkar, A.;
Panda, A. K.;
Dash, G. N.

Publication type:

Article

Fabrication and characteristics of double heterojunction bipolar transistor based on p-CuO/n-Si heterojunction.

Published in:

Applied Nanoscience, 2022, v. 12, n. 11, p. 3637, doi. 10.1007/s13204-022-02545-z

By:

Yousefizad, Milad;
Ghezelayagh, Mohammad Mahdi;
Hooshmand, Shiva;
Raissi, Farshid

Publication type:

Article

Analytical Neuro-Space Mapping Technology for Heterojunction Bipolar Transistors Modeling.

Published in:

Progress in Electromagnetics Research M, 2023, v. 120, p. 167, doi. 10.2528/pierm23080706

By:

Shuxia Yan;
Yuxing Li;
Chenglin Li;
Fengqi Qian;
Xu Wang;
Wenyuan Liu

Publication type:

Article

Investigation on the performance dependence of proton radiated SiGe HBTs with emitter area and temperature.

Published in:

Modern Physics Letters B, 2022, v. 36, n. 3, p. 1, doi. 10.1142/S021798492150559X

By:

Wei, Yinlong;
Lan, Kuibo;
Wang, Zhi;
Wei, Junqing;
Ma, Zhenqiang;
Qin, Guoxuan

Publication type:

Article

On the Coupling Imbalance of the UWB BLC in the 5G Low Noise Amplifier Design.

Published in:

Applied Computational Electromagnetics Society Journal, 2022, v. 37, n. 10, p. 986, doi. 10.13052/2022.ACES.J.370908

By:

Abouelnaga, Tamer G.;
Abdallah, Esmat A.

Publication type:

Article

On the Coupling Imbalance of the UWB BLC in the 5G Low Noise Amplifier Design.

Published in:

Applied Computational Electromagnetics Society Journal, 2022, v. 37, n. 9, p. 986, doi. 10.13052/2022.ACES.J.370908

By:

Abouelnaga, Tamer G.;
Abdallah, Esmat A.

Publication type:

Article

Design Features of Op-Amp Based on Bipolar Transistors for Anti-Aliasing Active LPF with a Low Systematic Component of Zero Offset Voltage.

Published in:

IUP Journal of Electrical & Electronics Engineering, 2022, v. 15, n. 3, p. 24

By:

Chumakov V. E.;
Serebryakov A. I.;
Titov A. E.;
Prokopenko N. N.

Publication type:

Article

Performance Enhancement of GeSn Transistor Laser with Symmetric and Asymmetric Multiple Quantum Well in the Base.

Published in:

Semiconductors, 2020, v. 54, n. 1, p. 77, doi. 10.1134/S1063782620010212

By:

Soumava Ghosh;
Mukhopadhyay, Bratati;
Sen, Gopa

Publication type:

Article

Temperature dependences of the electrical parameters of anisotype NiO/CdTe heterojunctions.

Published in:

Semiconductors, 2017, v. 51, n. 3, p. 344, doi. 10.1134/S1063782617030216

By:

Parkhomenko, H.;
Solovan, M.;
Mostovyi, A.;
Ulyanytsky, K.;
Maryanchuk, P.

Publication type:

Article

Comparative investigation of InGaP/GaAs/GaAsBi and InGaP/GaAs heterojunction bipolar transistors.

Published in:

Semiconductors, 2015, v. 49, n. 10, p. 1361, doi. 10.1134/S1063782615100279

By:

Wu, Yi-Chen;
Tsai, Jung-Hui;
Chiang, Te-Kuang;
Wang, Fu-Min

Publication type:

Article

Comparative study of InP/InGaAs double heterojunction bipolar transistors with InGaAsP spacer at base-collector junction.

Published in:

Semiconductors, 2013, v. 47, n. 10, p. 1391, doi. 10.1134/S1063782613100278

By:

Tsai, Jung-Hui;
Lee, Ching-Sung;
Jhou, Jia-Cing;
Wu, You-Ren;
Chiang, Chung-Cheng;
Chao, Yi-Ting;
Liu, Wen-Chau

Publication type:

Article

Comparative investigation of InP/InGaAs abrupt, setback, and heterostructure-emitter heterojunction bipolar transistors.

Published in:

Semiconductors, 2012, v. 46, n. 12, p. 1539, doi. 10.1134/S1063782612120184

By:

Tsai, Jung-Hui;
Huang, Chia-Hong;
Ma, Yung-Chun;
Wu, You-Ren

Publication type:

Article

Analysis of a Direct-Bandgap GeSn-Based MQW Transistor Laser for Mid-Infrared Applications.

Published in:

Journal of Electronic Materials, 2019, v. 48, n. 10, p. 6335, doi. 10.1007/s11664-019-07418-w

By:

Basu, Rikmantra;
Kaur, Jaspinder;
Sharma, Ajay K.

Publication type:

Article

Electrical Investigation of Nanostructured FeO/p-Si Heterojunction Diode Fabricated Using the Sol-Gel Technique.

Published in:

Journal of Electronic Materials, 2017, v. 46, n. 11, p. 6502, doi. 10.1007/s11664-017-5684-5

By:

Mansour, Shehab;
Ibrahim, Mervat

Publication type:

Article

Ultrathin SnO2 Scaffolds for TiO2-Based Heterojunction Photoanodes in Dye-Sensitized Solar Cells: Oriented Charge Transport and Improved Light Scattering.

Published in:

Chemistry - A European Journal, 2013, v. 19, n. 28, p. 9366, doi. 10.1002/chem.201300524

By:

Yang, Shuang;
Hou, Yu;
Xing, Jun;
Zhang, Bo;
Tian, Feng;
Yang, Xiao Hua;
Yang, Hua Gui

Publication type:

Article

Charge Photogeneration for a Series of Thiazolo-Thiazole Donor Polymers Blended with the Fullerene Electron Acceptors PCBM and ICBA.

Published in:

Advanced Functional Materials, 2013, v. 23, n. 26, p. 3286, doi. 10.1002/adfm.201203148

By:

Shoaee, Safa;
Subramaniyan, Selvam;
Xin, Hao;
Keiderling, Chaz;
Tuladhar, Pabitra Shakya;
Jamieson, Fiona;
Jenekhe, Samson A.;
Durrant, James R.

Publication type:

Article

Simulation of Lead-Free Heterojunction CsGeI 2 Br/CsGeI 3 -Based Perovskite Solar Cell Using SCAPS-1D.

Published in:

Solar, 2023, v. 3, n. 3, p. 458, doi. 10.3390/solar3030025

By:

Kenfack, Abraham Dimitri Kapim;
Thantsha, Nicolas Matome;
Msimanga, Mandla

Publication type:

Article

Design of injection-locked oscillator circuits using an HBT X-parametersTM-based model.

Published in:

IET Microwaves, Antennas & Propagation (Wiley-Blackwell), 2015, v. 9, n. 4, p. 380, doi. 10.1049/iet-map.2014.0118

By:

Rodríguez-Testera, Alejandro;
Pelaez-Perez, Ana;
Fernandez-Barciela, Monica;
Tasker, Paul J.

Publication type:

Article

Wideband analytical extraction technique of π-equivalent circuit model for Si/SiGe heterojunction bipolar transistor in BICMOS process.

Published in:

IET Microwaves, Antennas & Propagation (Wiley-Blackwell), 2014, v. 8, n. 1, p. 57, doi. 10.1049/iet-map.2013.0321

By:

Taher, Hany

Publication type:

Article

Design narrow-band frequency amplifier (1.5GHz -1.6GHz) based on InGaP Heterojunction Bipolar Transistor (HBT) and GaAs HBT transistor.

Published in:

Journal of Engineering (17264073), 2021, v. 27, n. 2, p. 13, doi. 10.31026/j.eng.2021.02.02

By:

Ballouk, Abdo;
Mofdi, Fawaz;
Ibrahim, Salem

Publication type:

Article

Electrical Characteristics of Cadmium Sulfide/4-Amino-2-Methyl-Quinoline Heterojunction Structure.

Published in:

Celal Bayar University Journal of Science, 2024, v. 20, n. 1, p. 23, doi. 10.18466/cbayarfbe.1396129

By:

Demir, Ramazan;
Kaya, İsmet

Publication type:

Article

Fabrication of UiO-66/g-C3N4 Heterostructure Nanocatalyst for Efficient Visible-Light Photocatalytic Performance.

Published in:

Journal of Molecular & Engineering Materials, 2022, v. 10, n. 3/4, p. 1, doi. 10.1142/S2251237322500022

By:

Xu, Shichao;
Yang, Weijing;
Liu, Yufan;
Yang, Jie;
Zu, Tongtong;
Hao, Mengchen;
Li, Yang;
Xiao, Yichen

Publication type:

Article

Simulation Study on Novel GaN‐Based n−p−n Heterojunction Bipolar Transistors with a Quaternary AlGaInN Emitter and a Two‐Dimensionally Conductive Base.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 4, p. 1, doi. 10.1002/pssa.202100397

By:

Mase, Akira;
Nikai, Yutaka;
Iida, Yusuke;
Egawa, Takashi;
Miyoshi, Makoto

Publication type:

Article

Large-scale one-dimensional BiOI nanostructures: synthesis, characterization, and photocatalytic applications.

Published in:

Applied Physics A: Materials Science & Processing, 2015, v. 118, n. 3, p. 913, doi. 10.1007/s00339-014-8811-7

By:

Liu, Chaohong;
Zhang, Dun

Publication type:

Article

A High Efficiency 1.8W Power Amplifier for Wireless Communications.

Published in:

Electronics & Electrical Engineering, 2014, v. 20, n. 8, p. 30, doi. 10.5755/j01.eee.20.8.2949

By:

Eswaran, U.;
Ramiah, H.;
Kanesan, J.

Publication type:

Article

An integrated linearization technique for GaAs bipolar WCDMA power amplifier.

Published in:

Current Science (00113891), 2018, v. 114, n. 2, p. 308, doi. 10.18520/cs/v114/i02/308-313

By:

Rajendran, Jagadheswaran;
Hamid, Sofiyah Sal;
Mohd, Shukri Korakkottil Kunhi;
Abdullah, Mohd Zaid;
Ramiah, Harikrishnan;
Kumar, Narendra

Publication type:

Article

Electrical spectrum synthesis technique using digital pre-processing and ultra-broadband electrical bandwidth doubler for high-speed optical transmitter.

Published in:

Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 24, p. 1390, doi. 10.1049/el.2018.6216

By:

Hamaoka, F.;
Nakamura, M.;
Nagatani, M.;
Wakita, H.;
Yamazaki, H.;
Kobayashi, T.;
Nosaka, H.;
Miyamoto, Y.

Publication type:

Article

Enhancing performance of a InGaP/GaAs VCO by means of a switching architecture.

Published in:

Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 11, p. 695, doi. 10.1049/el.2018.0965

By:

Pantoli, L.;
Arena, S.;
Cavanna, T.

Publication type:

Article

645-GHz InP heterojunction bipolar transistor harmonic oscillator.

Published in:

Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 22, p. 1475, doi. 10.1049/el.2017.2615

By:

Yun, J.;
Kim, J.;
Yoon, D.;
Rieh, J.-S.

Publication type:

Article

96 GHz 4.7 mW low-power frequency tripler with 0.5 V supply voltage.

Published in:

Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 19, p. 43, doi. 10.1049/el.2017.2523

By:

Liang, W.;
Mukherjee, A.;
Sakalas, P.;
Pawlak, A.;
Schröter, M.

Publication type:

Article

80 GBd 6-bit DAC in InP DHBT for arbitrary waveform generator.

Published in:

Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 23, p. 1937, doi. 10.1049/el.2016.3288

By:

Arayashiki, Y.;
Ikeda, M.;
Amano, Y.

Publication type:

Article

Very large bandwidth continuous time analogue equaliser in InP DHBT for beyond-100 GBd optical communication applications.

Published in:

Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 2, p. 135, doi. 10.1049/el.2015.3364

By:

Mettetal, R.;
Dupuy, J. -Y.;
Jorge, F.;
Riet, M.;
Nodjiadjim, V.;
Konczykowska, A.;
Ouslimani, A.

Publication type:

Article

600 GHz InP HBT frequency multiplier.

Published in:

Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 23, p. 1928, doi. 10.1049/el.2015.2916

By:

Choi, H.;
Urteaga, M.;
Kim, M.

Publication type:

Article

Extraction of small-signal model parameters of Si/SiGe heterojunction bipolar transistor using least squares support vector machines.

Published in:

Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 22, p. 1821, doi. 10.1049/el.2015.1978

By:

Taher, H.;
Farrell, R.;
Schreurs, D.;
Nauwelaers, B.

Publication type:

Article

InP/InGaAs double heterojunction bipolar transistors with BVCEO = 12 V and fmax = 470 GHz.

Published in:

Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 8, p. 648, doi. 10.1049/el.2014.4503

By:

Kashio, N.;
Kurishima, K.;
Ida, M.;
Matsuzaki, H.

Publication type:

Article

Hybrid photo-receiver based on SiGe heterojunction photo-transistor for low-cost 60 GHz intermediate-frequency radio-over-fibre applications.

Published in:

Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 8, p. 640, doi. 10.1049/el.2015.0062

By:

Viana, C.;
Tegegne, Z. G.;
Rosales, M.;
Polleux, J. L.;
Algani, C.;
Lecocq, V.;
Lyszyk, C.;
Denet, S.

Publication type:

Article

0.25 μm emitter InP/InAlGaAs/GaAsSb double heterojunction bipolar transistor with passivation ledge exhibiting a current gain of over 100.

Published in:

Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 22, p. 1631, doi. 10.1049/el.2014.2774

By:

Kashio, N.;
Kurishima, K.;
Ida, M.;
Matsuzaki, H.

Publication type:

Article

300 GHz InP HBT amplifier with 10 mW output power.

Published in:

Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 5, p. 1, doi. 10.1049/el.2013.3288

By:

Yu, H. G.;
Choi, S. H.;
Jeon, S.;
Kim, M.

Publication type:

Article

SiGe 135-GHz amplifier with inductive positive feedback operating near fmax.

Published in:

Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 19, p. 1, doi. 10.1049/el.2013.1660

By:

Hyunchul Kim;
Jongwon Yun;
Kiryong Song;
Jae-Sung Rieh

Publication type:

Article

70 GSa/s and 51 GHz bandwidth track-and-hold amplifier in InP DHBT process.

Published in:

Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 6, p. 1, doi. 10.1049/el.2013.0271

By:

Deza, J.;
Ouslimani, A.;
Konczykowska, A.;
Kasbari, A.;
Godin, J.;
Pailler, G.

Publication type:

Article

EXPERIMENTAL CHARACTERIZATION AND MODELING ANALYSIS ON NPN AIGaN/GaN HBT WITH HIGH IDEALITY FACTOR IN BOTH COLLECTOR AND BASE CURRENT.

Published in:

Surface Review & Letters, 2012, v. 19, n. 4, p. 1250043-1, doi. 10.1142/S0218625X12500436

By:

SHIH-WEI TAN;
SHIH-WEN LAI

Publication type:

Article

Characterization and Modeling of the Polysilicon Emitter Contact for Circuit Simulation.

Published in:

Journal of Circuits, Systems & Computers, 2021, v. 30, n. 14, p. 1, doi. 10.1142/S0218126621502510

By:

Jamasb, Shahriar

Publication type:

Article