Comprehensive downstream effluent management.
- Published in:
- Solid State Technology, 1998, v. 41, n. 5, p. 89
- By:
- Publication type:
- Article
Works matching DE "HEAT treatment of semiconductors"
Results: 35
1
2
Molecular Packing and Orientation Transition of Crystalline Poly(2,5-dihexyloxy- p-phenylene).
- Published in:
- Macromolecular Chemistry & Physics, 2014, v. 215, n. 5, p. 405, doi. 10.1002/macp.201300666
- By:
- Publication type:
- Article
3
Thermoelectric properties of semi conducting compound SbCoFeCe.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 9, p. 3933, doi. 10.1007/s10854-014-2109-6
- By:
- Publication type:
- Article
4
Polycrystalline silicon films fabricated by rapid thermal annealing.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 7, p. 1279, doi. 10.1007/s10854-012-0786-6
- By:
- Publication type:
- Article
5
Measurements of rapid thermal processes in thin films by the ferromagnetic resonator - technique.
- Published in:
- High Temperatures - High Pressures, 2014, v. 43, n. 2/3, p. 129
- By:
- Publication type:
- Article
6
High quantum efficiency of UV-enhanced silicon photodiodes.
- Published in:
- Canadian Journal of Physics, 2002, v. 80, n. 12, p. 1601, doi. 10.1139/P02-057
- By:
- Publication type:
- Article
7
Synthesis of CeO<sub>2</sub> nanoparticles by rapid thermal decomposition using microwave heating.
- Published in:
- Advances in Applied Ceramics: Structural, Functional & Bioceramics, 2010, v. 109, n. 2, p. 123, doi. 10.1179/174367509X12503626841631
- By:
- Publication type:
- Article
8
Rapid thermal annealing effects on the optical properties in strained CdTe (100)/GaAs (100) heterostructures.
- Published in:
- Journal of Materials Science, 2004, v. 39, n. 23, p. 7115, doi. 10.1023/B:JMSC.0000047562.80341.2b
- By:
- Publication type:
- Article
9
Ion induced intermixing and consequent effects on the leakage currents in HfO/SiO/Si systems.
- Published in:
- Applied Physics A: Materials Science & Processing, 2017, v. 123, n. 5, p. 1, doi. 10.1007/s00339-017-0911-8
- By:
- Publication type:
- Article
10
Laser rapid thermal annealing of quantum semiconductor wafers: a one step bandgap engineering technique.
- Published in:
- Applied Physics A: Materials Science & Processing, 2009, v. 94, n. 3, p. 667, doi. 10.1007/s00339-008-4955-7
- By:
- Publication type:
- Article
11
ASM HEAT TREATING SOCIETY CONFERENCE AND EXHIBITION.
- Published in:
- 2015
- Publication type:
- Proceeding
12
Can Semiconductor IC Equipment Survive without Thermal Spray Coatings?
- Published in:
- 2010
- Publication type:
- Editorial
13
Influence of Rapid Thermal Annealing on Molecular Orientation of Planar Cholesteric Liquid Crystal.
- Published in:
- Molecular Crystals & Liquid Crystals, 2009, v. 510, n. 1, p. 116, doi. 10.1080/15421400903058718
- By:
- Publication type:
- Article
14
Niobium nitride films formed by rapid thermal processing (RTP): a study of depth profiles and interface reactions by complementary analytical techniques.
- Published in:
- Analytical & Bioanalytical Chemistry, 2004, v. 379, n. 4, p. 554, doi. 10.1007/s00216-004-2612-3
- By:
- Publication type:
- Article
15
Retention Characteristics of (Bi,La) 4 Ti 3 O 12 Films on Si(100) Substrates Using LaAlO 3 Buffer Layers.
- Published in:
- Integrated Ferroelectrics, 2003, v. 52, n. 1, p. 187, doi. 10.1080/10584580390254529
- By:
- Publication type:
- Article
16
Structural and Optical Characterizations of Ge Nanostructures Fabricated by RF Magnetron Sputtering and Rapid Thermal Processing.
- Published in:
- Acta Physica Polonica: A, 2012, v. 121, n. 1, p. 16, doi. 10.12693/APhysPolA.121.16
- By:
- Publication type:
- Article
17
Reversible Color-Phase Transitions of Langmuir-Blodgett Polydiacetylene Films.
- Published in:
- Electrical Engineering in Japan, 1989, v. 109, n. 2, p. 33, doi. 10.1002/eej.4391090205
- By:
- Publication type:
- Article
18
EXPERIMENTAL CHARACTERIZATION AND MODELING ANALYSIS ON NPN AIGaN/GaN HBT WITH HIGH IDEALITY FACTOR IN BOTH COLLECTOR AND BASE CURRENT.
- Published in:
- Surface Review & Letters, 2012, v. 19, n. 4, p. 1250043-1, doi. 10.1142/S0218625X12500436
- By:
- Publication type:
- Article
19
STRUCTURAL CHARACTERISTICS OF (Ba,Sr)TiO<sub>3</sub> THIN FILMS BY RAPID THERMAL ANNEALING.
- Published in:
- Surface Review & Letters, 2007, v. 14, n. 1, p. 141, doi. 10.1142/S0218625X07009153
- By:
- Publication type:
- Article
20
PREPARATION AND CHARACTERIZATION OF In<sub>2</sub>O<sub>3</sub> THIN FILMS FOR OPTOELECTRONIC APPLICATIONS.
- Published in:
- Surface Review & Letters, 2005, v. 12, n. 4, p. 515, doi. 10.1142/S0218625X05007359
- By:
- Publication type:
- Article
21
PREPARATION AND PHOTOVOLTAIC PROPERTIES OF Ag<sub>2</sub>O/Si ISOTYPE HETEROJUNCTION.
- Published in:
- Surface Review & Letters, 2005, v. 12, n. 2, p. 299, doi. 10.1142/S0218625X05007074
- By:
- Publication type:
- Article
22
Electronic states on silicon surface after deposition and annealing of SiO films.
- Published in:
- Semiconductors, 2011, v. 45, n. 5, p. 587, doi. 10.1134/S1063782611050289
- By:
- Publication type:
- Article
23
Residual resistance and Joule heat generation in bulk samples and nanostructures.
- Published in:
- Semiconductors, 2008, v. 42, n. 8, p. 914, doi. 10.1134/S106378260808006X
- By:
- Publication type:
- Article
24
Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride.
- Published in:
- Semiconductors, 2008, v. 42, n. 6, p. 689, doi. 10.1134/S1063782608060092
- By:
- Publication type:
- Article
25
Features of long-term relaxation of capacitance in rectifying structures based on n-ZnP<sub>2</sub>.
- Published in:
- Semiconductors, 2008, v. 42, n. 6, p. 662, doi. 10.1134/S1063782608060067
- By:
- Publication type:
- Article
26
Effect of thermal annealing on the sensitivity of Si-based MOS diodes to reducing gases.
- Published in:
- Semiconductors, 2006, v. 40, n. 12, p. 1436, doi. 10.1134/S1063782606120128
- By:
- Publication type:
- Article
27
Effect of thermal annealing on the luminescent characteristics of CdSe/ZnSe quantum dot heterostructure.
- Published in:
- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010, v. 13, n. 2, p. 202, doi. 10.15407/spqeo13.02.202
- Publication type:
- Article
28
Hydrogen gettering in annealed oxygen-implanted silicon.
- Published in:
- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010, v. 13, n. 2, p. 161, doi. 10.15407/spqeo13.02.161
- Publication type:
- Article
29
Mechanism of the Local Cu Protrusion in Cu-Filled Through Silicon Vias Under Heat Treatment.
- Published in:
- Journal of Electronic Materials, 2019, v. 48, n. 1, p. 152, doi. 10.1007/s11664-018-6803-7
- By:
- Publication type:
- Article
30
Preparation and Characterization of Ultralow-Dielectric-Constant Porous SiCOH Thin Films Using 1,2-Bis(triethoxysilyl)ethane, Triethoxymethylsilane, and a Copolymer Template.
- Published in:
- Journal of Electronic Materials, 2011, v. 40, n. 10, p. 2139, doi. 10.1007/s11664-011-1721-y
- By:
- Publication type:
- Article
31
Influence of Substrate Temperature and Post-Deposition Annealing on Material Properties of Ga-Doped ZnO Prepared by Pulsed Laser Deposition.
- Published in:
- Journal of Electronic Materials, 2011, v. 40, n. 4, p. 419, doi. 10.1007/s11664-010-1396-9
- By:
- Publication type:
- Article
32
Effects of High-Energy Electron Irradiation on ZnO/Si MSM Photodetectors.
- Published in:
- Journal of Electronic Materials, 2011, v. 40, n. 4, p. 433, doi. 10.1007/s11664-010-1411-1
- By:
- Publication type:
- Article
33
ZT Measurements Under Large Temperature Differences.
- Published in:
- Journal of Electronic Materials, 2010, v. 39, n. 9, p. 1782, doi. 10.1007/s11664-010-1136-1
- By:
- Publication type:
- Article
34
The effect of thermal treatment on the charge-carrier lifetime in nickel-doped silicon.
- Published in:
- Russian Physics Journal, 2006, v. 49, n. 2, p. 183, doi. 10.1007/s11182-006-0085-x
- By:
- Publication type:
- Article
35
Thermal budget control for processes with spike-shaped temperature profiles: Application to rapid thermal annealing.
- Published in:
- Asian Journal of Control, 2012, v. 14, n. 3, p. 756, doi. 10.1002/asjc.435
- By:
- Publication type:
- Article