Works about HAFNIUM oxide

Results: 457

Fabrication of nano memory using memristor for artificial intelligence.

Published in:

International Journal of Electronics Letters, 2025, v. 13, n. 2, p. 186, doi. 10.1080/21681724.2024.2444654

By:

Nanoti, N. G.;
Kshirsagar, U.A.;
Choudhury, Bikash Dev

Publication type:

Article

Enhancement of fMAX/fT in α-Ga2O3 MOSFET with ultra-wide bandgap MgO and CaO blocking layers.

Published in:

Applied Physics A: Materials Science & Processing, 2025, v. 131, n. 5, p. 1, doi. 10.1007/s00339-025-08512-z

By:

Fletcher, A. S. Augustine;
Murugapandiyan, P.;
Mohanbabu, A.;
Dhanasekar, S.;
Saranya, G.

Publication type:

Article

Effect of post-metallization anneal on monolithic co-integration of Hf0.5Zr0.5O2-based FeFET and CMOS.

Published in:

Scientific Reports, 2025, v. 15, n. 1, p. 1, doi. 10.1038/s41598-025-02281-8

By:

An, Jehyun;
Ham, Beomjoo;
Hong, Giryun;
Park, Jongseo;
Kang, Bohyeon;
Pyo, Jaeseong;
Ahn, Sung-Min;
Baek, Rock-Hyun

Publication type:

Article

The search continues for high-k gate dielectrics.

Published in:

Solid State Technology, 2001, v. 44, n. 2, p. 46

By:

Demmin, Jeffrey C.

Publication type:

Article

Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfO x based Memristive Devices.

Published in:

Advanced Functional Materials, 2017, v. 27, n. 32, p. n/a, doi. 10.1002/adfm.201700432

By:

Sharath, Sankaramangalam Ulhas;
Vogel, Stefan;
Molina‐Luna, Leopoldo;
Hildebrandt, Erwin;
Wenger, Christian;
Kurian, Jose;
Duerrschnabel, Michael;
Niermann, Tore;
Niu, Gang;
Calka, Pauline;
Lehmann, Michael;
Kleebe, Hans‐Joachim;
Schroeder, Thomas;
Alff, Lambert

Publication type:

Article

Physical Mechanisms behind the Field-Cycling Behavior of HfO2-Based Ferroelectric Capacitors.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 25, p. 4601, doi. 10.1002/adfm.201600590

By:

Pešić, Milan;
Fengler, Franz Paul Gustav;
Larcher, Luca;
Padovani, Andrea;
Schenk, Tony;
Grimley, Everett D.;
Sang, Xiahan;
LeBeau, James M.;
Slesazeck, Stefan;
Schroeder, Uwe;
Mikolajick, Thomas

Publication type:

Article

Enhanced Performance of Self-Assembled Monolayer Field-Effect Transistors with Top-Contact Geometry through Molecular Tailoring, Heated Assembly, and Thermal Annealing.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 33, p. 5376, doi. 10.1002/adfm.201501263

By:

Cernetic, Nathan;
Weidner, Tobias;
Baio, Joe E.;
Lu, Hao;
Ma, Hong;
Jen, Alex K.‐Y.

Publication type:

Article

Facile Single-Precursor Synthesis and Surface Modification of Hafnium Oxide Nanoparticles for Nanocomposite γ-Ray Scintillators.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 29, p. 4607, doi. 10.1002/adfm.201501439

By:

Liu, Chao;
Hajagos, Tibor Jacob;
Kishpaugh, David;
Jin, Yunxia;
Hu, Wei;
Chen, Qi;
Pei, Qibing

Publication type:

Article

Thermally Stable Transparent Resistive Random Access Memory based on All-Oxide Heterostructures.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 15, p. 2171, doi. 10.1002/adfm.201303274

By:

Shang, Jie;
Liu, Gang;
Yang, Huali;
Zhu, Xiaojian;
Chen, Xinxin;
Tan, Hongwei;
Hu, Benlin;
Pan, Liang;
Xue, Wuhong;
Li, Run‐Wei

Publication type:

Article

Analysis of the chemical states and microstructural, electrical, and carrier transport properties of the Ni/HfO2/Ga2O3/n-GaN MOS junction.

Published in:

Journal of Materials Science: Materials in Electronics, 2023, v. 34, n. 9, p. 1, doi. 10.1007/s10854-023-10149-8

By:

Manjunath, V.;
Chalapathi, U.;
Reddy, B. Purusottam;
Ahn, Chang-Hoi;
Park, Si-Hyun

Publication type:

Article

Synthesis, characterization of undoped and copper-doped hafnium oxide nanoparticles by sol–gel method.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 13, p. 10439, doi. 10.1007/s10854-022-08031-0

By:

Mahendran, N.;
Johnson Jeyakumar, S.;
Jothibas, M.;
Ponnar, M.;
Muthuvel, A.

Publication type:

Article

Fabrication of HfxSi1−xO2 microparticle-loaded PVK-based plastic scintillators using the sol–gel method for high-energy X-ray detection at high counting rate.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 24, p. 28807, doi. 10.1007/s10854-021-07265-8

By:

Sato, Atsushi;
Koshimizu, Masanori;
Fujimoto, Yutaka;
Kishimoto, Shunji;
Asai, Keisuke

Publication type:

Article

Effect of zero bias Gamma ray irradiation on HfO thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 12, p. 12796, doi. 10.1007/s10854-016-5412-6

By:

Maurya, Savita

Publication type:

Article

Study of electrical properties of hafnium oxide thin film based metal-insulator-metal capacitors: pre and post metallic annealing.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 12, p. 12527, doi. 10.1007/s10854-016-5783-8

By:

Mangla, O.;
Gupta, V.

Publication type:

Article

Double hysteresis loop in BaTiHfO ferroelectric ceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 8, p. 5833, doi. 10.1007/s10854-015-3143-8

By:

Das, S.;
Roul, B.

Publication type:

Article

Enhanced leakage current properties of HfO/GaN gate dielectric stack by introducing an ultrathin buffer layer.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 1, p. 152, doi. 10.1007/s10854-013-1565-8

By:

Tang, Zhen;
Li, Rong;
Yin, Jiang

Publication type:

Article

Growth and properties of HfZnO thin films on flexible PET substrate using pulsed laser deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 1, p. 362, doi. 10.1007/s10854-012-0757-y

By:

Zhou, Xiongtu;
Zhang, Yong-ai;
Shi, Wangzhou;
Guo, Tailiang

Publication type:

Article

Study of the effect of thermal annealing on high k hafnium oxide thin film structure and electrical properties of MOS and MIM devices.

Published in:

Journal of Materials Science: Materials in Electronics, 2011, v. 22, n. 7, p. 882, doi. 10.1007/s10854-010-0230-8

By:

Srivastava, A.;
Nahar, R. K.;
Sarkar, C. K.

Publication type:

Article

Atomic layer deposition of hafnium oxide dielectrics on silicon and germanium substrates.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 119, doi. 10.1007/s10854-007-9337-y

By:

McNeill, D. W.;
Bhattacharya, S.;
Wadsworth, H.;
Ruddell, F. H.;
Mitchell, S. J. N.;
Armstrong, B. M.;
Gamble, H. S.

Publication type:

Article

Study of electrical and microstructure properties of high dielectric hafnium oxide thin film for MOS devices.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 6, p. 615, doi. 10.1007/s10854-006-9111-6

By:

Nahar, R.;
Singh, Vikram;
Sharma, Aparna

Publication type:

Article

Oxidation behavior of chromium-rich Fe-based alloys containing HfC carbides at 1100 °C.

Published in:

Materials & Corrosion / Werkstoffe und Korrosion, 2015, v. 66, n. 10, p. 1101, doi. 10.1002/maco.201407916

By:

Conrath, E.;
Berthod, P.

Publication type:

Article

Group IV Oxides for Perovskite Solar Cells.

Published in:

Doklady Physical Chemistry, 2021, v. 496, n. 2, p. 13, doi. 10.1134/S0012501621020020

By:

Vildanova, M. F.;
Nikolskaia, A. B.;
Kozlov, S. S.;
Shevaleevskiy, O. I.;
Almjasheva, O. V.;
Gusarov, V. V.

Publication type:

Article

Improving Fuel Product Quality from Catalytic Cracking Units in Oil Refineries Using a Co-HfO2/Mesoporous SiO2 Nanocomposite Catalyst.

Published in:

Journal of Petroleum Research & Studies, 2025, v. 15, n. 1, p. 143, doi. 10.52716/jprs.v15i1.907

By:

Alkhafaji, Haider M. H.

Publication type:

Article

Exploratory studies on wet oxidation grown ternary hafnium tantalum oxide for metal‐oxide semiconductor application.

Published in:

International Journal of Energy Research, 2022, v. 46, n. 4, p. 4699, doi. 10.1002/er.7466

By:

Lim, Way Foong;
Quah, Hock Jin

Publication type:

Article

Evaluation of structural, electronic, thermoelectric, and optical results of C‐doped HfO2 by first‐principle's investigation.

Published in:

International Journal of Energy Research, 2020, v. 44, n. 1, p. 144, doi. 10.1002/er.4878

By:

Cao, Zhenheng;
Fan, Ting;
Hou, Xueyuan;
Niu, Jiajia;
Sharma, Ramesh;
Dar, Sajad Ahmad

Publication type:

Article

Understanding and tuning negative longitudinal piezoelectricity in hafnia.

Published in:

Cell Death Discovery, 2024, v. 10, n. 1, p. 1, doi. 10.1038/s41524-024-01354-y

By:

Jing, Huirong;
Guan, Chaohong;
Zhu, Hong

Publication type:

Article

Effects of La Doping on Local Structure of Hafnium Oxide Studied by X-Ray Absorption Spectroscopy.

Published in:

Integrated Ferroelectrics, 2023, v. 238, n. 1, p. 125, doi. 10.1080/10584587.2023.2234560

By:

Tongpeng, Suparat;
Wannapaiboon, Suttipong;
Janphuang, Pattanaphong;
Jiansirisomboon, Sukanda

Publication type:

Article

Anisotropy of Weak Ferromagnetism of HfAlO x Film Deposited by Magnetron Sputtering.

Published in:

Integrated Ferroelectrics, 2012, v. 134, n. 1, p. 13, doi. 10.1080/10584587.2012.663652

By:

Zhou, G. D.;
Zhang, S. Y.;
Tu, Y. T.;
Li, J.;
Chen, P.;
Dai, J. Y.;
Qiu, X. Y.

Publication type:

Article

CRYSTALLIZATION BEHAVIOR OF HfO2 FILMS FOR (Y,Yb)MnO3/HfO2/Si STRUCTURES.

Published in:

Integrated Ferroelectrics, 2007, v. 94, n. 1, p. 3, doi. 10.1080/10584580701755674

By:

Suzuki, Kazuyuki;
Kato, Kazumi

Publication type:

Article

IMPROVEMENT OF ALKOXY-DERIVED HfO2 LAYERS FOR (Y, Yb)MnO3/HfO2/Si STRUCTURES.

Published in:

Integrated Ferroelectrics, 2006, v. 84, n. 1, p. 121, doi. 10.1080/10584580601085420

By:

SUZUKI, KAZUYUKI;
GUO, YIPING;
NISHIZAWA, KAORI;
MIKI, TAKESHI;
KATO, KAZUMI

Publication type:

Article

The AHL Quorum Sensing Inhibitory Potential of Dandelion-Ag Nanoparticles Against Salmon-originated Hafnia sp.

Published in:

Journal of Chinese Institute of Food Science & Technology / Zhongguo Shipin Xuebao, 2024, v. 24, n. 3, p. 210, doi. 10.16429/j.1009-7848.2024.03.021

By:

Tan Xiqian;
Pei Jianbo;
Wang Xiaoqing;
Cui Fangchao;
Meng Yuqiong;
Ma Rui;
Li Xuepeng;
Li Jianrong

Publication type:

Article

壳聚糖协同乳酸链球菌素抗轻腌大黄鱼源特定腐败菌抑制效应研究.

Published in:

Journal of Chinese Institute of Food Science & Technology / Zhongguo Shipin Xuebao, 2022, v. 22, n. 5, p. 259, doi. 10.16429/j.1009-7848.2022.05.028

By:

张小敏;
郭全友;
周国燕;
杨絮;
黄海潮;
王晓阳

Publication type:

Article

Dispersion Engineering of Waveguide Microresonators by the Design of Atomic Layer Deposition.

Published in:

Photonics, 2023, v. 10, n. 4, p. 428, doi. 10.3390/photonics10040428

By:

Wang, Pei-Hsun;
Hou, Nien-Lin;
Ho, Kung-Lin

Publication type:

Article

Impact of native defects and impurities in m−HfO2 and β−Si3N4 on charge trapping memory devices: A first principle hybrid functional study.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 2, p. n/a, doi. 10.1002/pssb.201600360

By:

Lu, Wenjuan;
Dai, Yuehua;
Wang, Feifei;
Jin, Bo

Publication type:

Article

Interaction of Gd and N incorporation on the band structure and oxygen vacancies of HfO2 gate dielectric films.

Published in:

Physica Status Solidi (B), 2014, v. 251, n. 8, p. 1635, doi. 10.1002/pssb.201451303

By:

Xiong, Yuhua;
Tu, Hailing;
Du, Jun;
Wang, Ligen;
Wei, Feng;
Chen, Xiaoqiang;
Yang, Mengmeng;
Zhao, Hongbin;
Chen, Dapeng;
Wang, Wenwu

Publication type:

Article

How reduced vacuum pumping capability in a coating chamber affects the laser damage resistance of HfO2/SiO2 antireflection and high-reflection coatings.

Published in:

Optical Engineering, 2017, v. 56, n. 1, p. 1, doi. 10.1117/1.OE.56.1.011005

By:

Field, Ella S.;
Bellum, John C.;
Kletecka, Damon E.

Publication type:

Article

Role of HfO2/SiO2 thin-film interfaces in near-ultraviolet absorption and pulsed laser damage.

Published in:

Optical Engineering, 2017, v. 56, n. 1, p. 1, doi. 10.1117/1.OE.56.1.011004

By:

Papernov, Semyon;
Kozlov, Alexei A.;
Oliver, James B.;
Smith, Chris;
Jensen, Lars;
Günster, Stefan;
Mädebach, Heinrich;
Ristau, Detlev

Publication type:

Article

Near-ultraviolet absorption annealing in hafnium oxide thin films subjected to continuous-wave laser radiation.

Published in:

Optical Engineering, 2014, v. 53, n. 12, p. 1, doi. 10.1117/1.OE.53.12.122504

By:

Papernov, Semyon;
Kozlov, Alexei A.;
Oliver, James B.;
Kessler, Terrance J.;
Shvydky, Alexander;
Marozas, Brenda

Publication type:

Article

Phase formation and stability in TiO x and ZrO x thin films: Extremely sub-stoichiometric functional oxides for electrical and TCO applications.

Published in:

Zeitschrift für Kristallographie. Crystalline Materials, 2017, v. 232, n. 1-3, p. 161, doi. 10.1515/zkri-2016-1981

By:

Henning, Ralph A.;
Leichtweiss, Thomas;
Decker, Yannic;
Janek, Jürgen;
Dorow-Gerspach, Daniel;
Schmidt, Rüdiger;
Wuttig, Matthias;
Wolff, Niklas;
Schürmann, Ulrich;
Kienle, Lorenz

Publication type:

Article

Enhancing SiGeSn nanocrystals SWIR photosensing by high passivation in nanocrystalline HfO2 matrix.

Published in:

Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-53845-z

By:

Dascalescu, Ioana;
Palade, Catalin;
Slav, Adrian;
Stavarache, Ionel;
Cojocaru, Ovidiu;
Teodorescu, Valentin Serban;
Maraloiu, Valentin-Adrian;
Lepadatu, Ana-Maria;
Ciurea, Magdalena Lidia;
Stoica, Toma

Publication type:

Article

Vertical tunneling FET with Ge/Si doping-less heterojunction, a high-performance switch for digital applications.

Published in:

Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-44096-5

By:

Cherik, Iman Chahardah;
Mohammadi, Saeed;
Maity, Subir Kumar

Publication type:

Article

Vertical tunneling FET with Ge/Si doping-less heterojunction, a high-performance switch for digital applications.

Published in:

Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-44096-5

By:

Cherik, Iman Chahardah;
Mohammadi, Saeed;
Maity, Subir Kumar

Publication type:

Article

Linear and symmetric synaptic weight update characteristics by controlling filament geometry in oxide/suboxide HfOx bilayer memristive device for neuromorphic computing.

Published in:

Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-36784-z

By:

Sahu, Dwipak Prasad;
Park, Kitae;
Chung, Peter Hayoung;
Han, Jimin;
Yoon, Tae-Sik

Publication type:

Article

APC Signs Contract with Hafnia.

Published in:: CoatingsTech, 2025, v. 22, n. 2, p. 16
Publication type:: Article

First Characterization of a Hafnia Phage Reveals Extraordinarily Large Burst Size and Unusual Plaque Polymorphism.

Published in:

Frontiers in Microbiology, 2022, v. 12, p. 1, doi. 10.3389/fmicb.2021.754331

By:

Pan, Lingting;
Li, Dengfeng;
Sun, Zhitong;
Lin, Wei;
Hong, Binxin;
Qin, Weinan;
Xu, Lihua;
Liu, Wencai;
Zhou, Qin;
Wang, Fei;
Cai, Ruqian;
Qian, Minhua;
Tong, Yigang

Publication type:

Article

Hafnia alvei Urosepsis in a Kidney Transplant Patient.

Published in:

2015

By:

Stanic, Mario;
Meusburger, Edgar;
Hartmann, Gabriele;
Lhotta, Karl

Publication type:

Case Study

Tunable and parabolic piezoelectricity in hafnia under epitaxial strain.

Published in:

Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-023-44207-w

By:

Cheng, Hao;
Jiao, Peijie;
Wang, Jian;
Qing, Mingkai;
Deng, Yu;
Liu, Jun-Ming;
Bellaiche, Laurent;
Wu, Di;
Yang, Yurong

Publication type:

Article

Durable Ru Nanocrystal with HfO2 Modification for Acidic Overall Water Splitting.

Published in:

Nano-Micro Letters, 2024, v. 16, n. 1, p. 1, doi. 10.1007/s40820-024-01384-7

By:

Kong, Xiangkai;
Xu, Jie;
Ju, Zhicheng;
Chen, Changle

Publication type:

Article

Model of Reversible Breakdown in HfO2 Based on Fractal Patterns.

Published in:

Advances in Condensed Matter Physics, 2015, v. 2015, p. 1, doi. 10.1155/2015/136938

By:

Lorenzi, P.;
Rao, R.;
Romano, G.;
Irrera, F.

Publication type:

Article

Design and Test of Nanoscale Non-Aligned Double Gate FET Inverter and Ring Oscillator for Low-Power Application in TCAD Simulation Environment.

Published in:

Journal of Circuits, Systems & Computers, 2025, v. 34, n. 7, p. 1, doi. 10.1142/S0218126625501725

By:

Sangam, Sri Lakshmi;
Sinha, Arun Kumar

Publication type:

Article