Works about HAFNIUM oxide

Results: 461

Physical Mechanisms behind the Field-Cycling Behavior of HfO2-Based Ferroelectric Capacitors.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 25, p. 4601, doi. 10.1002/adfm.201600590

By:

Pešić, Milan;
Fengler, Franz Paul Gustav;
Larcher, Luca;
Padovani, Andrea;
Schenk, Tony;
Grimley, Everett D.;
Sang, Xiahan;
LeBeau, James M.;
Slesazeck, Stefan;
Schroeder, Uwe;
Mikolajick, Thomas

Publication type:

Article

Enhanced Performance of Self-Assembled Monolayer Field-Effect Transistors with Top-Contact Geometry through Molecular Tailoring, Heated Assembly, and Thermal Annealing.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 33, p. 5376, doi. 10.1002/adfm.201501263

By:

Cernetic, Nathan;
Weidner, Tobias;
Baio, Joe E.;
Lu, Hao;
Ma, Hong;
Jen, Alex K.‐Y.

Publication type:

Article

Facile Single-Precursor Synthesis and Surface Modification of Hafnium Oxide Nanoparticles for Nanocomposite γ-Ray Scintillators.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 29, p. 4607, doi. 10.1002/adfm.201501439

By:

Liu, Chao;
Hajagos, Tibor Jacob;
Kishpaugh, David;
Jin, Yunxia;
Hu, Wei;
Chen, Qi;
Pei, Qibing

Publication type:

Article

Thermally Stable Transparent Resistive Random Access Memory based on All-Oxide Heterostructures.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 15, p. 2171, doi. 10.1002/adfm.201303274

By:

Shang, Jie;
Liu, Gang;
Yang, Huali;
Zhu, Xiaojian;
Chen, Xinxin;
Tan, Hongwei;
Hu, Benlin;
Pan, Liang;
Xue, Wuhong;
Li, Run‐Wei

Publication type:

Article

Atomic layer deposition of hafnium oxide dielectrics on silicon and germanium substrates.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 119, doi. 10.1007/s10854-007-9337-y

By:

McNeill, D. W.;
Bhattacharya, S.;
Wadsworth, H.;
Ruddell, F. H.;
Mitchell, S. J. N.;
Armstrong, B. M.;
Gamble, H. S.

Publication type:

Article

Study of electrical and microstructure properties of high dielectric hafnium oxide thin film for MOS devices.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 6, p. 615, doi. 10.1007/s10854-006-9111-6

By:

Nahar, R.;
Singh, Vikram;
Sharma, Aparna

Publication type:

Article

Investigation of Electronic Excitations in Monoclinic HfO2 Studied by Energy-Filtered Transmission Electron Microscopy-Spectrum-Imaging and Momentum-Resolved Electron Energy Loss ω-q Mapping Techniques.

Published in:

2023

By:

Liou, Sz-Chian;
Oleshko, Vladimir P;
Zhan, Xun;
Shu, Guo-Jiun

Publication type:

Abstract

Pinning and Depinning of Domain Switching in Ferroelectric HfO2 Freestanding Membrane.

Published in:

2023

By:

Go, Kyoung-June;
Kim, Min-Su;
Lee, Kyoungjun;
Lee, Jun Hee;
Chae, Seung Chul;
Choi, Si-Young

Publication type:

Abstract

Understanding and tuning negative longitudinal piezoelectricity in hafnia.

Published in:

Cell Death Discovery, 2024, v. 10, n. 1, p. 1, doi. 10.1038/s41524-024-01354-y

By:

Jing, Huirong;
Guan, Chaohong;
Zhu, Hong

Publication type:

Article

Etching Properties of HfO2 Thin Films in Cl2/BCl3/Ar Plasma.

Published in:

Ferroelectrics, 2009, v. 381, n. 1, p. 30, doi. 10.1080/00150190902880621

By:

DONG-PYO KIM;
GWAN-HA KIM;
JONG-CHANG WOO;
XUE YANG;
DOO-SEUNG UM;
CHANG-IL KIM

Publication type:

Article

Construction of the (Y,Yb)MnO3/HfO2 Stacking Layers through the Chemical Solution Process.

Published in:

Ferroelectrics, 2007, v. 357, n. 1, p. 196, doi. 10.1080/00150190701544352

By:

Suzuki, Kazuyuki;
Nishizawa, Kaori;
Miki, Takeshi;
Kato, Kazumi

Publication type:

Article

Bioanalysis by Immobilization of Antibodies on Hafnium(IV) Oxide with 3-Aminopropyltriethoxysilane.

Published in:

Analytical Letters, 2017, v. 50, n. 18, p. 2937, doi. 10.1080/00032719.2017.1320666

By:

Ortiz-Dosal, Luis C.;
Kolosovas-Machuca, Eleazar S.;
Carmen Rodríguez-Aranda, M.;
López-Luna, Edgar;
Hernández-Arriaga, Heber;
Vera-Reveles, Gustavo;
Gonzalez, Francisco J.

Publication type:

Article

Non-Uniform Spline Quasi-Interpolation to Extract the Series Resistance in Resistive Switching Memristors for Compact Modeling Purposes.

Published in:

Mathematics (2227-7390), 2021, v. 9, n. 17, p. 2159, doi. 10.3390/math9172159

By:

Ibáñez, María José;
Barrera, Domingo;
Maldonado, David;
Yáñez, Rafael;
Roldán, Juan Bautista

Publication type:

Article

Optimal Process Design for Wake-Up Free Hf 0.5 Zr 0.5 O 2 Ferroelectric Capacitors: Toward Low-Power Devices with Enhanced Ferroelectric Performance.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 15, p. 2895, doi. 10.3390/electronics13152895

By:

Wang, Hui;
Qi, Jiabin;
Xie, Xinyu;
Liu, Zongfang;
Wu, Wenhao;
Lee, Choonghyun

Publication type:

Article

Effects of a Spike-Annealed HfO 2 Gate Dielectric Layer on the On-Resistance and Interface Quality of AlGaN/GaN High-Electron-Mobility Transistors.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 14, p. 2783, doi. 10.3390/electronics13142783

By:

Lee, Gyuhyung;
Yang, Jeongyong;
Yeom, Min Jae;
Yoon, Sisung;
Yoo, Geonwook

Publication type:

Article

A Unified and Open LTSPICE Memristor Model Library.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 13, p. 1594, doi. 10.3390/electronics10131594

By:

Mladenov, Valeri

Publication type:

Article

Phase formation and stability in TiO x and ZrO x thin films: Extremely sub-stoichiometric functional oxides for electrical and TCO applications.

Published in:

Zeitschrift für Kristallographie. Crystalline Materials, 2017, v. 232, n. 1-3, p. 161, doi. 10.1515/zkri-2016-1981

By:

Henning, Ralph A.;
Leichtweiss, Thomas;
Decker, Yannic;
Janek, Jürgen;
Dorow-Gerspach, Daniel;
Schmidt, Rüdiger;
Wuttig, Matthias;
Wolff, Niklas;
Schürmann, Ulrich;
Kienle, Lorenz

Publication type:

Article

Effect of post-metallization anneal on monolithic co-integration of Hf0.5Zr0.5O2-based FeFET and CMOS.

Published in:

Scientific Reports, 2025, v. 15, n. 1, p. 1, doi. 10.1038/s41598-025-02281-8

By:

An, Jehyun;
Ham, Beomjoo;
Hong, Giryun;
Park, Jongseo;
Kang, Bohyeon;
Pyo, Jaeseong;
Ahn, Sung-Min;
Baek, Rock-Hyun

Publication type:

Article

Investigation of Localized Charges on Linearity and Distortion Performance of Ferroelectric Dual Material Gate All Around TFETs.

Published in:

Journal of Nano- & Electronic Physics, 2019, v. 11, n. 4, p. 1, doi. 10.21272/jnep.11(4).04014

By:

Mishra, Varun;
Verma, Yogesh Kumar;
Gupta, Santosh Kumar

Publication type:

Article

Investigating the Temperature Effects on ZnO, TiO2, WO3 and HfO2 Based Resistive Random Access Memory (RRAM) Devices.

Published in:

Journal of Nano- & Electronic Physics, 2016, v. 8, n. 4, p. 1, doi. 10.21272/jnep.8(4(1)).04030

By:

Dongale, T. D.;
Khot, K. V.;
Mohite, S. V.;
Khandagale, S. S.;
Shinde, S. S.;
Patil, V. L.;
Vanalkar, S. A.;
Moholkar, A. V.;
Rajpure, K. Y.;
Bhosale, P. N.;
Patil, P. S.;
Gaikwad, P. K.;
Kamat, R. K.

Publication type:

Article

Influence of the Substrate Temperature on the Size Distribution and Phase Composition of Ablated HfO2 Nanoparticles.

Published in:

Journal of Nano- & Electronic Physics, 2015, v. 7, n. 4, p. 04099-1

By:

Panfilov, V. I.;
Pugachevskii, M. A.;
Kuzmenko, A. P.;
Dobromyslov, M. B.

Publication type:

Article

The Hydrothermal Autoclave Synthesis of the Nanopowders of the Refractory ZrO2 and HfO2 Oxides.

Published in:

Journal of Nano- & Electronic Physics, 2015, v. 7, n. 4, p. 04076-1

By:

Karpovich, N. F.;
Pugachevsky, M. A.;
Panfilov, V. I.;
Kuzmenko, A. P.;
Dobromyslov, M. B.

Publication type:

Article

High Memory Window, Dual‐Gate Amorphous InGaZnO Thin‐Film Transistor with Ferroelectric Gate Insulator.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2025, v. 222, n. 4, p. 1, doi. 10.1002/pssa.202400638

By:

Roy, Samiran;
Islam, Md Mobaidul;
Ali, Arqum;
Saha, Jewel Kumer;
Lee, Heonbang;
Tooshil, Abul;
Jang, Jin

Publication type:

Article

High Memory Window, Dual‐Gate Amorphous InGaZnO Thin‐Film Transistor with Ferroelectric Gate Insulator.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2025, v. 222, n. 3, p. 1, doi. 10.1002/pssa.202400638

By:

Roy, Samiran;
Islam, Md Mobaidul;
Ali, Arqum;
Saha, Jewel Kumer;
Lee, Heonbang;
Tooshil, Abul;
Jang, Jin

Publication type:

Article

Dual‐Mode Operation of Epitaxial Hf0.5Zr0.5O2: Ferroelectric and Filamentary‐Type Resistive Switching.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 22, p. 1, doi. 10.1002/pssa.202300409

By:

Knabe, Judith;
Berg, Fenja;
Thorben Goβ, Kalle;
Boettger, Ulrich;
Dittmann, Regina

Publication type:

Article

Doped HfOx Nanoclusters: Polar and Resistive Switching in the Smallest Functional Units.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 22, p. 1, doi. 10.1002/pssa.202300404

By:

Rushchanskii, Konstantin Z.;
Ležaić, Marjana;
Blügel, Stefan

Publication type:

Article

Impact of Electric Field Pulse Duration on Ferroelectric Hafnium Zirconium Oxide Thin Film Capacitor Endurance.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 2, p. 1, doi. 10.1002/pssa.202300566

By:

Lenox, Megan K.;
Jaszewski, Samantha T.;
Fields, Shelby S.;
Shukla, Nikhil;
Ihlefeld, Jon F.

Publication type:

Article

A Study on Imprint Behavior of Ferroelectric Hafnium Oxide Caused by High‐Temperature Annealing.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 7, p. 1, doi. 10.1002/pssa.202300067

By:

Sünbül, Ayse;
Lehninger, David;
Lederer, Maximilian;
Mähne, Hannes;
Hoffmann, Raik;
Bernert, Kerstin;
Thiem, Steffen;
Schöne, Fred;
Döllgast, Moritz;
Haufe, Nora;
Roy, Lisa;
Kämpfe, Thomas;
Seidel, Konrad;
Eng, Lukas M.

Publication type:

Article

Analog reservoir computing via ferroelectric mixed phase boundary transistors.

Published in:

Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-024-53321-2

By:

Kim, Jangsaeng;
Park, Eun Chan;
Shin, Wonjun;
Koo, Ryun-Han;
Han, Chang-Hyeon;
Kang, He Young;
Yang, Tae Gyu;
Goh, Youngin;
Lee, Kilho;
Ha, Daewon;
Cheema, Suraj S.;
Jeong, Jae Kyeong;
Kwon, Daewoong

Publication type:

Article

Investigation of Dual-Layer Si-ITO-Dielectric Based Hybrid Plasmonic Electro-Absorption Modulator at 1.55 µm Wavelength.

Published in:

Fiber & Integrated Optics, 2024, v. 43, n. 4, p. 162, doi. 10.1080/01468030.2024.2392099

By:

Das, Himanshu R.

Publication type:

Article

Indium passivation impact on HfO2/GaAs interface: A first-principles study.

Published in:

Modern Physics Letters B, 2017, v. 31, n. 18, p. -1, doi. 10.1142/S0217984917502037

By:

Zhang, Lamei;
Shang, Jimin;
Cai, Genwang

Publication type:

Article

Synapse and resistance switching behavior of La:HfO2/ZrO2/La:HfO2 memristors.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2025, v. 39, n. 18, p. 1, doi. 10.1142/S0217979225501619

By:

Su, Yong-Jun;
Jiang, Yan-Ping;
Tang, Jia-Yu;
Tang, Xin-Gui;
Tang, Zhenhua;
Guo, Xiao-Bin;
Li, Wen-Hua;
Zhou, Yichun

Publication type:

Article

The structural correlation and mechanical properties in amorphous hafnium oxide under pressure.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2020, v. 34, n. 22-24, p. N.PAG, doi. 10.1142/S0217979220401499

By:

Thoan, Nguyen-Hoang;
Do, Nguyen-Trung;
Trung, Nguyen-Ngoc;
Vinh, Le-Van

Publication type:

Article

The complete genome sequence of Hafnia alvei A23BA; a potential antibiotic-producing rhizobacterium.

Published in:

BMC Research Notes, 2021, v. 14, n. 1, p. 1, doi. 10.1186/s13104-020-05418-2

By:

Awolope, Opeyemi K.;
O'Driscoll, Noelle H.;
Di Salvo, Alberto;
Lamb, Andrew J.

Publication type:

Article

Characterization of novel bacteriophage HP‐T19 that targets Hafnia alvei.

Published in:

Aquaculture Research, 2022, v. 53, n. 2, p. 694, doi. 10.1111/are.15592

By:

Ture, Mustafa;
Altinok, Ilhan;
Cebeci, Ayse;
Caliskan, Nihal

Publication type:

Article

Self-Powered Neutron Detector with Hafnium Metal Emitter in VVER Reactors.

Published in:

Physics of Atomic Nuclei, 2024, v. 87, n. 8, p. 1064, doi. 10.1134/S1063778824080052

By:

Kalinushkin, A. E.;
Kurchenkov, A. Yu.;
Markov, D. S.;
Sergeev, I. A.

Publication type:

Article

Mass spectrometric study of thermodynamic properties in the Gd2O3-Y2O3 system at high temperatures.

Published in:

Rapid Communications in Mass Spectrometry: RCM, 2017, v. 31, n. 6, p. 538, doi. 10.1002/rcm.7809

By:

Kablov, Eugene N.;
Stolyarova, Valentina L.;
Lopatin, Sergey I.;
Vorozhtcov, Viktor A.;
Karachevtsev, Fedor N.;
Folomeikin, Yuriy I.

Publication type:

Article

First principles LDA+U and GGA+U study of HfO2: Dependence on the effective U parameter.

Published in:

Gazi University Journal of Science, 2014, v. 27, n. 1, p. 627

By:

ÇİFTCİ, Yasemin Ö.;
ERGÜN, A. H.;
ÇOLAKOĞLU, K.;
DELİGÖZ, E.

Publication type:

Article

Thermodynamic Calculation of HfB Volatility Diagram.

Published in:

Journal of Phase Equilibria & Diffusion, 2011, v. 32, n. 5, p. 422, doi. 10.1007/s11669-011-9930-x

By:

Li, Hui;
Zhang, Litong;
Zeng, Qingfeng;
Cheng, Laifei

Publication type:

Article

Ab Initio Materials Modeling of Point Defects in a High-κ Metal Gate Stack of Scaled CMOS Devices: Variability Versus Engineering the Effective Work Function.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 10, p. 6303, doi. 10.1007/s11664-024-11347-8

By:

Pandey, Rajan Kumar

Publication type:

Article

Design and Optimization of a Heterojunction (Ge/Si) Vertical-Tunnel Field Effect Transistor (HV-TFET) with a Doped Bar for Low-Power Applications.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 7, p. 3933, doi. 10.1007/s11664-024-11130-9

By:

Kumawat, Pradeep Kumar;
Birla, Shilpi;
Singh, Neha

Publication type:

Article

The Reliability Impact of Bi Doping on the HfO2 Charge-Trapping Layer: A First-Principles Study.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 7, p. 3756, doi. 10.1007/s11664-024-11066-0

By:

Ye, Fengyu;
Zhu, Ying;
Yuan, Jun-Hui;
Wang, Jiafu

Publication type:

Article

Compact Model for a Negative Capacitance-Based Top-Gated Carbon-Nanotube Field-Effect Transistor.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 4, p. 2135, doi. 10.1007/s11664-024-10921-4

By:

Mairaj, Sanna;
Singh, Amandeep

Publication type:

Article

Effect of La and Sc Doping on the Structural, Electronic, and Optical Properties of Cubic HfO2: A DFT-Based Spin-Polarized Calculation.

Published in:

Journal of Electronic Materials, 2023, v. 52, n. 9, p. 6234, doi. 10.1007/s11664-023-10561-0

By:

Kar, Jayanta Kumar;
Rano, Ruma;
Chaudhury, Saurabh

Publication type:

Article

Design and Qualitative Analysis of 5-nm Nanowire TFET with Spacer Engineering.

Published in:

Journal of Electronic Materials, 2023, v. 52, n. 3, p. 2094, doi. 10.1007/s11664-022-10182-z

By:

Vishnupriyan, J.;
ChayaDevi, S. K.;
Megala, V.;
Karpagam, R.

Publication type:

Article

Current conduction mechanisms in HfO2 and SrHfON thin films prepared by magnetron sputtering.

Published in:

Journal of Materials Science, 2014, v. 49, n. 4, p. 1875, doi. 10.1007/s10853-013-7876-6

By:

Feng, Li-ping;
Li, Ning;
Tian, Hao;
Liu, Zheng-tang

Publication type:

Article

Recent progress in ab initio simulations of hafnia-based gate stacks.

Published in:

Journal of Materials Science, 2012, v. 47, n. 21, p. 7399, doi. 10.1007/s10853-012-6568-y

By:

Zhu, H.;
Tang, C.;
Fonseca, L.;
Ramprasad, R.

Publication type:

Article

Effect of inner oxygen on the interfacial layer formation for HfO2 gate dielectric.

Published in:

Journal of Materials Science, 2007, v. 42, n. 17, p. 7343, doi. 10.1007/s10853-007-1584-z

By:

Ran Jiang;
Xie, E. Q.;
Wang, Z. F.

Publication type:

Article

Creep behaviour of MoSi2–HfO2 composites.

Published in:

Journal of Materials Science, 2005, v. 40, n. 14, p. 3869, doi. 10.1007/s10853-005-2546-y

By:

Besterci, M.;
Ballóková, B.;
Hvizdoš, P.;
Scholl, R.;
Böhm, A.

Publication type:

Article

Thin films: Unexpected magnetism in a dielectric oxide.

Published in:

Nature, 2004, v. 430, n. 7000, p. 630, doi. 10.1038/430630a

By:

Venkatesan, M.;
Fitzgerald, C. B.;
Coey, J. M. D.

Publication type:

Article