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The Reliability Impact of Bi Doping on the HfO<sub>2</sub> Charge-Trapping Layer: A First-Principles Study.
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- Journal of Electronic Materials, 2024, v. 53, n. 7, p. 3756, doi. 10.1007/s11664-024-11066-0
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- Article
Design and Optimization of a Heterojunction (Ge/Si) Vertical-Tunnel Field Effect Transistor (HV-TFET) with a Doped Bar for Low-Power Applications.
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- Journal of Electronic Materials, 2024, v. 53, n. 7, p. 3933, doi. 10.1007/s11664-024-11130-9
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- Article
Electric-field-induced crystallization of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> thin film based on phase-field modeling.
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- NPJ Quantum Materials, 2024, v. 9, n. 1, p. 1, doi. 10.1038/s41535-024-00652-4
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- Article
Radiotherapy-sensitized cancer immunotherapy via cGAS-STING immune pathway by activatable nanocascade reaction.
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- Journal of Nanobiotechnology, 2024, v. 22, n. 1, p. 1, doi. 10.1186/s12951-024-02502-8
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- Article
Nonvolatile optical phase shift in ferroelectric hafnium zirconium oxide.
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- Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-024-47893-2
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- Article
Epitaxy‐Driven Ferroelectric/Non‐Ferroelectric Polymorph Selection in an All‐Fluorite System.
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- Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202300522
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- Article
Synthesis of Hafnium Diboride Ceramic Powders by Carbothermal Reduction.
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- Glass & Ceramics, 2024, v. 81, n. 1/2, p. 24, doi. 10.1007/s10717-024-00653-6
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- Article
Durable Ru Nanocrystal with HfO<sub>2</sub> Modification for Acidic Overall Water Splitting.
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- Nano-Micro Letters, 2024, v. 16, n. 1, p. 1, doi. 10.1007/s40820-024-01384-7
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- Article
Formation and energetics of head-to-head and tail-to-tail domain walls in hafnium zirconium oxide.
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- Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-60155-x
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- Article
Hf-W dating of zircon in mesosiderite with high-pressure sintered standard.
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- Journal of Analytical Science & Technology, 2024, v. 15, n. 1, p. 1, doi. 10.1186/s40543-024-00438-0
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- Article
Compact Model for a Negative Capacitance-Based Top-Gated Carbon-Nanotube Field-Effect Transistor.
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- Journal of Electronic Materials, 2024, v. 53, n. 4, p. 2135, doi. 10.1007/s11664-024-10921-4
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- Article
Improved Polarization‐Retention‐Endurance in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Films by ZrO<sub>2</sub> Capping via Electrostatic Effects.
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- Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300509
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- Article
Impact of Europium and Niobium Doping on Hafnium Oxide (HfO 2): Comparative Analysis of Sol–Gel and Combustion Synthesis Methods.
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- Ceramics (2571-6131), 2024, v. 7, n. 1, p. 15, doi. 10.3390/ceramics7010002
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- Article
Structural Evolution and Mechanical Behavior of Ytterbia Doped Hafnia Biphasic Ceramics under Annealing at 1500 °C.
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- Crystals (2073-4352), 2024, v. 14, n. 3, p. 279, doi. 10.3390/cryst14030279
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- Article
The Phase-Dependent Regulation of Lux-Type Genes on the Spoilage Characteristics of Hafnia alvei.
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- Foods, 2024, v. 13, n. 5, p. 688, doi. 10.3390/foods13050688
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- Article
The AHL Quorum Sensing Inhibitory Potential of Dandelion-Ag Nanoparticles Against Salmon-originated Hafnia sp.
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- Journal of Chinese Institute of Food Science & Technology, 2024, v. 24, n. 3, p. 210, doi. 10.16429/j.1009-7848.2024.03.021
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- Article
Exploration and analysis of n-FinFET implementing stacked high-K at 08 nm gate length.
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- Sādhanā: Academy Proceedings in Engineering Sciences, 2024, v. 49, n. 1, p. 1, doi. 10.1007/s12046-023-02380-0
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- Article
Enhancing SiGeSn nanocrystals SWIR photosensing by high passivation in nanocrystalline HfO<sub>2</sub> matrix.
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- Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-53845-z
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- Article
Large‐Area Electrode Deposition and Patterning for Monolayer Organic Field‐Effect Transistors by Vacuum‐Filtrated MXene.
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- Advanced Electronic Materials, 2024, v. 10, n. 2, p. 1, doi. 10.1002/aelm.202300570
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- Article
Bipolar Plasticity in Synaptic Transistors: Utilizing HfSe 2 Channel with Direct-Contact HfO 2 Gate Dielectrics.
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- Inorganics, 2024, v. 12, n. 2, p. 60, doi. 10.3390/inorganics12020060
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- Article
Transcriptome Reveals Regulation of Quorum Sensing of Hafnia alvei H4 on the Coculture System of Hafnia alvei H4 and Pseudomonas fluorescens ATCC13525.
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- Foods, 2024, v. 13, n. 2, p. 336, doi. 10.3390/foods13020336
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- Article
Impact of Electric Field Pulse Duration on Ferroelectric Hafnium Zirconium Oxide Thin Film Capacitor Endurance.
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- Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 2, p. 1, doi. 10.1002/pssa.202300566
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- Article
Tunable and parabolic piezoelectricity in hafnia under epitaxial strain.
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- Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-023-44207-w
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- Article
Direction‐Dependent Lateral Domain Walls in Ferroelectric Hafnium Zirconium Oxide and their Gradient Energy Coefficients: A First‐Principles Study.
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- Advanced Electronic Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1002/aelm.202300400
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- Article
Luminescence in Anion-Deficient Hafnia Nanotubes.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 24, p. 3109, doi. 10.3390/nano13243109
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- Article
Mechanical-electrical-chemical coupling study on the stabilization of a hafnia-based ferroelectric phase.
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- NPJ Computational Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1038/s41524-023-01176-4
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- Article
Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide.
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- Nano Convergence, 2023, v. 10, n. 1, p. 1, doi. 10.1186/s40580-023-00403-4
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- Article
A Comparative Study of n- and p-Channel FeFETs with Ferroelectric HZO Gate Dielectric.
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- Solids (2673-6497), 2023, v. 4, n. 4, p. 356, doi. 10.3390/solids4040023
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- Article
Vertical tunneling FET with Ge/Si doping-less heterojunction, a high-performance switch for digital applications.
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- Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-44096-5
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- Article
Catalytic MnWO<sub>4</sub> Nanorods for Chemodynamic Therapy Synergized Radiotherapy of Triple Negative Breast Cancer.
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- Advanced Functional Materials, 2023, v. 33, n. 47, p. 1, doi. 10.1002/adfm.202306328
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- Article
High Performance and High Yield Solution Processed IGZO Thin Film Transistors Fabricated with Low‐Temperature Annealed Hafnium Dioxide Gate Dielectric.
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- Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300415
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- Article
Stabilizing Antiferroelectric‐Like Aluminum‐Doped Hafnium Oxide for Energy Storage Capacitors.
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- Advanced Engineering Materials, 2023, v. 25, n. 20, p. 1, doi. 10.1002/adem.202300443
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- Article
Vertical tunneling FET with Ge/Si doping-less heterojunction, a high-performance switch for digital applications.
- Published in:
- Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-44096-5
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- Article
Emerging nonoxide dielectrics for next‐generation electronics.
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- Bulletin of the Korean Chemical Society, 2023, v. 44, n. 10, p. 806, doi. 10.1002/bkcs.12764
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- Article
Effect of Formation Conditions for Hafnium Oxide Films on Structural and Electrophysical Properties of Heterostructures.
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- Journal of Communications Technology & Electronics, 2023, v. 68, n. 10, p. 1191, doi. 10.1134/S1064226923100017
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- Article
Effects of different metal electrodes on the ferroelectric properties of HZO thin films.
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- Journal of Materials Science: Materials in Electronics, 2023, v. 34, n. 28, p. 1, doi. 10.1007/s10854-023-11303-y
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- Article
Small-Signal Modeling of GaN-BTG MOSFET for Wireless Applications.
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- Wireless Personal Communications, 2023, v. 132, n. 3, p. 2243, doi. 10.1007/s11277-023-10720-w
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- Article
Multi-level resistive switching in hafnium-oxide-based devices for neuromorphic computing.
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- Nano Convergence, 2023, v. 10, n. 1, p. 1, doi. 10.1186/s40580-023-00392-4
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- Article
Fast switching photodetector based on HfO<sub>2</sub> thin film deposited using electron beam evaporation technique.
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- Applied Physics A: Materials Science & Processing, 2023, v. 129, n. 9, p. 1, doi. 10.1007/s00339-023-06907-4
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- Article
Isolation of Hafnia alvei from bronchoalveolar lavage of an immunocompetent host presenting with cavitating pneumonia: Contaminant or Causative?
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- Germs, 2023, v. 13, n. 3, p. 292, doi. 10.18683/germs.2023.1398
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- Article
Effect of La and Sc Doping on the Structural, Electronic, and Optical Properties of Cubic HfO<sub>2</sub>: A DFT-Based Spin-Polarized Calculation.
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- Journal of Electronic Materials, 2023, v. 52, n. 9, p. 6234, doi. 10.1007/s11664-023-10561-0
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- Article
All-Dielectric Gratings with High-Quality Structural Colors.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 17, p. 2414, doi. 10.3390/nano13172414
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- Article
Physical properties of HfO<sub>2</sub> nano structures deposited using PLD.
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- International Journal of Nanoelectronics & Materials, 2023, v. 16, n. 3, p. 495
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- Article
Linear and symmetric synaptic weight update characteristics by controlling filament geometry in oxide/suboxide HfO<sub>x</sub> bilayer memristive device for neuromorphic computing.
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- Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-36784-z
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- Article
Flash nanoprecipitation of hafnia nanoparticle computed tomography contrast agent.
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- Journal of Nanoparticle Research, 2023, v. 25, n. 6, p. 1, doi. 10.1007/s11051-023-05763-w
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- Article
A Proposed Nonaligned Double Gate Junction FET Device and its Performance Improvement Using High-k Gate Oxide Material.
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- NANO, 2023, v. 18, n. 6, p. 1, doi. 10.1142/S1793292023500406
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- Article
The impact of Hafnia alvei HA4597™ on weight loss and glycaemic control after bariatric surgery — study protocol for a triple-blinded, blocked randomized, 12-month, parallel-group, placebo-controlled clinical trial.
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- Trials, 2023, v. 24, n. 1, p. 1, doi. 10.1186/s13063-023-07383-0
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- Article
Numerical analysis of hafnium oxide and phase change material-based multi-layered infrared and visible frequency sensor for biomolecules sensing application.
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- Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-34817-1
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- Article
Effect of HfO 2 Particles on Ceramic Coating Fabricated on Ti6Al4V Alloy via Plasma Electrolytic Oxidation.
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- Coatings (2079-6412), 2023, v. 13, n. 5, p. 967, doi. 10.3390/coatings13050967
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- Article
Ferroelectricity and Oxide Reliability of Stacked Hafnium–Zirconium Oxide Devices.
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- Materials (1996-1944), 2023, v. 16, n. 9, p. 3306, doi. 10.3390/ma16093306
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- Article