Works matching DE "GUNN diodes"

Results: 36

SPATIAL POWER COMBINING USING ACTIVE MICROSTRIP PATCH ANTENNAS.

Published in:

Microwave & Optical Technology Letters, 1988, v. 1, n. 1, p. 8, doi. 10.1002/mop.4650010104

By:

Hummer, Kenneth A.;
Kai Chang

Publication type:

Article

Remote Extinction of a 2.4 GHz RF Front-End Using Millimeter-Wave EMI in the Near-Field.

Published in:

Progress in Electromagnetics Research Letters, 2017, v. 68, p. 99

By:

Payet, Pierre;
Raoult, Jérémy;
Chusseau, Laurent

Publication type:

Article

Active Microstrip Antenna with a Gunn Diode.

Published in:

Radiophysics & Quantum Electronics, 2003, v. 46, n. 8/9, p. 717, doi. 10.1023/B:RAQE.0000025003.45139.63

By:

Lyubchenko, V.;
Kotov, V.;
Yunevich, E.

Publication type:

Article

Coherent Summation of Wave Fields of Nanosecond Gunn Oscillators with Initial Phases Fixed by the Leading Edges of Electric Pulses from Synchronized Modulators.

Published in:

Instruments & Experimental Techniques, 2018, v. 61, n. 4, p. 521, doi. 10.1134/S0020441218030168

By:

Barmin, V. V.;
Klimov, A. I.;
Kovalchuk, O. B.;
Konev, V. Yu.

Publication type:

Article

A double-diode autodyne transceiver.

Published in:

Instruments & Experimental Techniques, 2015, v. 58, n. 4, p. 505, doi. 10.1134/S0020441215030240

By:

Noskov, V.

Publication type:

Article

Amplification of microwave oscillations on harmonics of the Gunn diode conductivity.

Published in:

Instruments & Experimental Techniques, 2013, v. 56, n. 6, p. 659, doi. 10.1134/S002044121306016X

By:

Alekseev, Yu.;
Dem'yanenko, A.

Publication type:

Article

High- Q microwave chamber providing Gunn diodes operation in the oscillation and amplification modes.

Published in:

Instruments & Experimental Techniques, 2006, v. 49, n. 3, p. 391, doi. 10.1134/S0020441206030158

By:

Alekseev, Yu.;
Maliev, I.

Publication type:

Article

Efficient Generation of Microwave Oscillations at Harmonics of the Conductance of a Gunn Diode.

Published in:

Instruments & Experimental Techniques, 2004, v. 47, n. 6, p. 775, doi. 10.1023/B:INET.0000049698.00223.43

By:

Alekseev, Yu. I.;
Maliev, I. V.

Publication type:

Article

Hot electron injector Gunn diode for advanced driver assistance systems.

Published in:

Applied Physics A: Materials Science & Processing, 2007, v. 87, n. 3, p. 545, doi. 10.1007/s00339-007-3872-5

By:

Förster, A.;
Lepsa, M. I.;
Freundt, D.;
Stock, J.;
Montanari, S.

Publication type:

Article

Nonlinear Regression of characteristic of gunn diode: A Neurocomputing Approach.

Published in:

International Journal of Advanced Research in Computer Science, 2012, v. 3, n. 3, p. 781

By:

Kale, S. N.;
Dudul, S. V.

Publication type:

Article

Microwave-signal generation in a planar Gunn diode with radiation exposure taken into account.

Published in:

Semiconductors, 2016, v. 50, n. 12, p. 1579, doi. 10.1134/S1063782616120149

By:

Obolenskaya, E.;
Tarasova, E.;
Churin, A.;
Obolensky, S.;
Kozlov, V.

Publication type:

Article

On the radiation resistance of planar Gunn diodes with δ-doped layers.

Published in:

Semiconductors, 2015, v. 49, n. 11, p. 1459, doi. 10.1134/S1063782615110160

By:

Obolenskaya, E.;
Churin, A.;
Obolensky, S.;
Murel, A.;
Shashkin, V.

Publication type:

Article

Measurement of the mobility and concentration of charge carriers in a Gunn gallium-arsenide diode using a near-field microwave microscope.

Published in:

Semiconductors, 2013, v. 47, n. 13, p. 1715, doi. 10.1134/S1063782613130149

By:

Usanov, D.;
Gorbatov, S.;
Kvasko, V.

Publication type:

Article

Near-field microwave microscopy of nanometer-scale metal layers on dielectric substrates.

Published in:

Semiconductors, 2012, v. 46, n. 13, p. 1622, doi. 10.1134/S1063782612130179

By:

Usanov, D.;
Skripal', A.;
Abramov, A.;
Bogolyubov, A.;
Korotin, B.;
Feklistov, V.;
Ponomarev, D.;
Frolov, A.

Publication type:

Article

Determination of the Minority-Carrier Lifetime in Silicon Ingots by Photoconductivity Relaxation Measured at Microwave Frequencies.

Published in:

Semiconductors, 2004, v. 38, n. 9, p. 1005, doi. 10.1134/1.1797476

By:

Borodovsk&iitilde;, P. A.;
Buldygin, A. F.;
Tokarev, A. S.

Publication type:

Article

Phase and Structural Changes Stimulated in Multilayer Contacts to n-GaAs by Rapid Thermal Annealing.

Published in:

Semiconductors, 2003, v. 37, n. 9, p. 1114, doi. 10.1134/1.1610130

By:

Boltovets, N.S.;
Ivanov, V.N.;
Konakova, R.V.;
Lytvyn, P.M.;
Lytvyn, 0.S.;
Miienin, V.V.;
Prokopenko, I.V.

Publication type:

Article

CAVITY STABILIZED GUNN OSCILLATOR AT 35 GHz.

Published in:

Microwave & Optical Technology Letters, 1994, v. 7, n. 5, p. 236, doi. 10.1002/mop.4650070509

By:

Nag, B. R.;
Saha, P. K.;
Ghosh, G.;
Biswas, S. K.

Publication type:

Article

MULTIDOMAIN GUNN DIODES.

Published in:

Microwave & Optical Technology Letters, 1990, v. 3, n. 2, p. 54, doi. 10.1002/mop.4650030205

By:

Tsay, Jenngang;
Schwarz, S. E.;
Raman, Shankar;
Smith, J. S.

Publication type:

Article

Phase stabilization of nanosecond microwave oscillations in Gunn-diode-based oscillators.

Published in:

Technical Physics, 2015, v. 60, n. 3, p. 420, doi. 10.1134/S1063784215030147

By:

Konev, V.;
Klimov, A.;
Koval'chuk, O.;
Gubanov, V.;
Kozhevnikov, V.;
Kozyrev, A.

Publication type:

Article

Domain Dynamics in a Gunn Diode Inserted in a Resistive Circuit.

Published in:

Technical Physics, 2001, v. 46, n. 4, p. 422, doi. 10.1134/1.1365465

By:

Domrachev, S. I.;
Kuznetsov, A. A.

Publication type:

Article

Numerical investigation of InGaAs-based planar Gunn diodes with fundamental frequency up to 116 GHz.

Published in:

Applied Physics A: Materials Science & Processing, 2015, v. 120, n. 4, p. 1593, doi. 10.1007/s00339-015-9367-x

By:

Li, B.;
Liu, H.;
Wen, C.

Publication type:

Article

Signals of Autodyne Sensors with Sinusoidal Frequency Modulation.

Published in:

Radioengineering, 2017, v. 26, n. 4, p. 1182, doi. 10.13164/re.2017.1182

By:

NOSKOV, Vladislav Ya.;
IGNATKOV, Kirill A.;
CHUPAHIN, Andrey P.;
VASILYEV, Aleksandr S.;
ERMAK, Gennadiy P.;
SMOLSKIY, Sergey M.

Publication type:

Article

Application of a Gunn-diode current-pulse generator for modulation of semiconductor lasers.

Published in:

Technical Physics, 1999, v. 44, n. 5, p. 544, doi. 10.1134/1.1259380

By:

Domrachev, S. I.;
Alaverdjan, S. A.;
Skorokhodov, V. N.

Publication type:

Article

Relation between the domain dynamics and the shape of the cathode “notch” in a Gunn diode.

Published in:

Technical Physics Letters, 1998, v. 24, n. 11, p. 836, doi. 10.1134/1.1262284

By:

Mikhaılov, A. I.;
Lerner, D. M.

Publication type:

Article

Interrelation between the resistance of Gunn diodes in weak electric fields and the characteristics of oscillators based on them.

Published in:

Technical Physics Letters, 1998, v. 24, n. 5, p. 371, doi. 10.1134/1.1262127

By:

Usanov, D. A.;
Skripal’, A. V.;
Babayan, A. V.

Publication type:

Article

Nonlinear Device Modelling Using R B F Neural Network.

Published in:

CURIE Journal, 2010, v. 3, n. 1, p. 34

By:

Shar!na, Vipul;
Pattnaik, Shyain S.;
Devi, S.;
Kamal, Shyam;
Pathak, Ambarish;
Smriti, Manu

Publication type:

Article

VCO/RADIATOR MODULE TUNED BY FERROELECTRIC VARACTOR.

Published in:

Integrated Ferroelectrics, 2008, v. 97, n. 1, p. 38, doi. 10.1080/10584580802086557

By:

Kozyrev, A. B.;
Buslov, O. Yu.;
Golovkov, A. A.;
Keis, V. N.;
Krasilnikov, S. V.;
Samoilova, T. B.;
Shimko, A. Yu.;
Ginley, D.;
Kaydanova, T.

Publication type:

Article

Thermal Modeling of the GaN-based Gunn Diode at Terahertz Frequencies.

Published in:

Applied Sciences (2076-3417), 2019, v. 9, n. 1, p. 75, doi. 10.3390/app9010075

By:

Wang, Ying;
Ao, Jinping;
Liu, Shibin;
Hao, Yue

Publication type:

Article

2D semiconductor structures as a basis for new high-tech devices (Review).

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 4, p. 380, doi. 10.15407/spqeo21.04.380

By:

Korbutyak, D. V.;
Lytovchenko, V. G.;
Strikha, M. V.

Publication type:

Article

Ohmic contacts based on Pd to indium phosphide Gunn diodes.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 3, p. 317, doi. 10.15407/spqeo18.03.317

By:

Belyaev, A. E.;
Boltovets, N. S.;
Bobyl, A. V.;
Zorenko, A. V.;
Arsentiev, I. N.;
Kladko, V. P.;
Kovtonyuk, V. M.;
Konakova, R. V.;
Kudryk, Ya. Ya.;
Sachenko, A. V.;
Slipokurov, V. S.;
Slepova, A. S.;
Safryuk, N. V.;
Gudymenko, A. I.;
Shynkarenko, V. V.

Publication type:

Article

Graded-gap AlInN Gunn diodes.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2012, v. 15, n. 2, p. 176

By:

Storozhenko, I. P.;
Yaroshenko, A. N.;
Kaydash, M. V.

Publication type:

Article

Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 4, p. 65

By:

Belyaev, A. E.;
Bobyl, A. V.;
Boltovets, N. S.;
Ivanov, V. N.;
Konakova, R. V.;
Konnikov, S. G.;
Kudryk, Ya. Ya.;
Markovskiy, E. P.;
Milenin, V. V.;
Rudenko, E. M.;
Tereschenko, G. F.;
Ulin, V. P.;
Ustinov, V. M.;
Tsirlin, G. E.;
Shpak, A. P.

Publication type:

Article

Autodyne Effect of the System Involving Two Mutually Synchronized Oscillators under Strong Coupling.

Published in:

Journal of Communications Technology & Electronics, 2018, v. 63, n. 2, p. 180, doi. 10.1134/S1064226918020080

By:

Noskov, V. Ya.;
Ignatkov, K. A.;
Chupakhin, A. P.

Publication type:

Article

Noise characteristics of autodynes with frequency stabilization by means of an external high-Q cavity.

Published in:

Journal of Communications Technology & Electronics, 2016, v. 61, n. 9, p. 1052, doi. 10.1134/S1064226916090102

By:

Noskov, V.;
Ignatkov, K.

Publication type:

Article

Gunn Diodes Based on Graded InGaP-InPAs.

Published in:

Journal of Nano- & Electronic Physics, 2018, v. 10, n. 4, p. 1, doi. 10.21272/jnep.10(4).04014

By:

Storozhenko, I. P.;
Kaydash, M. V.

Publication type:

Article

The enhancement of the output characteristics in the GaN based multiple-channel planar Gunn diode.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 5, p. 1252, doi. 10.1002/pssa.201532703

By:

Wang, Ying;
Yang, Lin‐An;
Wang, Zhi‐Zhe;
Ao, Jin‐Ping;
Hao, Yue

Publication type:

Article