Works matching DE "GERMANIUM telluride"

Results: 68

Tailoring the Electron and Phonon Transport in Metavalently Bonded GeTe by Stepwise Doping.

Published in:

Advanced Energy Materials, 2025, v. 15, n. 20, p. 1, doi. 10.1002/aenm.202405178

By:

Liu, Ming;
Guo, Muchun;
Yang, Yuxuan;
Dong, Xingyan;
Lyu, Haiyan;
Lai, Yingda;
Zhang, Yang;
Zhu, Yuke;
Wu, Hao;
Guo, Fengkai;
Liu, Zihang;
Cai, Wei;
Wuttig, Matthias;
Wu, Haijun;
Yu, Yuan;
Sui, Jiehe

Publication type:

Article

A review on GeTe thin film-based phase-change materials.

Published in:

Applied Nanoscience, 2023, v. 13, n. 1, p. 95, doi. 10.1007/s13204-021-01911-7

By:

Singh, Kamaljit;
Kumari, Sudesh;
Singh, Harpreet;
Bala, Neeru;
Singh, Palwinder;
Kumar, Akshay;
Thakur, Anup

Publication type:

Article

Interplay of spin-orbit coupling and superconducting correlations in germanium telluride thin films.

Published in:

Physica Status Solidi - Rapid Research Letters, 2016, v. 10, n. 3, p. 253, doi. 10.1002/pssr.201510430

By:

Narayan, Vijay;
NguyEN, Thuy ‐ Anh;
Mansell, Rhodri;
Ritchie, David;
Mussler, Gregor

Publication type:

Article

CRYSTALLIZATION, KINETICS AND MEAN BOND ENERGY OF GLASSES FROM THE GeSe2-GeTe-SnTe SYSTEM.

Published in:

Journal of Chemical Technology & Metallurgy, 2017, v. 52, n. 2, p. 379

By:

Aljihmani, Lilia

Publication type:

Article

Influence of heat treatment on the optical properties and structure of Ge[sub 20]Te[sub 80] films.

Published in:

Applied Physics A: Materials Science & Processing, 2004, v. 78, n. 4, p. 597, doi. 10.1007/s00339-003-2153-1

By:

Moharram, A.H.;
Abu-Sehly, A.A.;
Abdel-Rahim, F.M.

Publication type:

Article

Electrical switching studies of lead-doped germanium telluride glasses.

Published in:

Applied Physics A: Materials Science & Processing, 2003, v. 77, n. 5, p. 665, doi. 10.1007/s00339-002-1759-z

By:

Saheb, P.Z.;
Asokan, S.;
Gowda, K.A.

Publication type:

Article

Electrical switching in germanium telluride glasses doped with Cu and Ag.

Published in:

Applied Physics A: Materials Science & Processing, 1999, v. 69, n. 4, p. 421, doi. 10.1007/s003390051025

By:

Ramesh, K.;
Asokan, S.;
Sangunni, K.S.;
Gopal, E.S.R.

Publication type:

Article

Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe-SbTe chalcogenide semiconductors.

Published in:

Semiconductors, 2017, v. 51, n. 2, p. 146, doi. 10.1134/S1063782617020191

By:

Sherchenkov, A.;
Kozyukhin, S.;
Lazarenko, P.;
Babich, A.;
Bogoslovskiy, N.;
Sagunova, I.;
Redichev, E.

Publication type:

Article

Electron conductivity in GeTe and GeSe upon ion implantation of Bi.

Published in:

Semiconductors, 2015, v. 49, n. 12, p. 1640, doi. 10.1134/S1063782615120088

By:

Fedorenko, Ya.

Publication type:

Article

Resonance states, heavy quasiparticles, and the thermoelectric figure of merit of IV-VI materials.

Published in:

Semiconductors, 2012, v. 46, n. 7, p. 866, doi. 10.1134/S1063782612070160

By:

Prokofieva, L.;
Ravich, Yu.;
Pshenay-Severin, D.;
Konstantinov, P.;
Shabaldin, A.

Publication type:

Article

All-Dielectric Metasurface-Enabled Near-Infrared Switching Based on Ge2Sb2Te5 Phase-Change Material.

Published in:

Journal of Electronic Materials, 2020, v. 49, n. 6, p. 3913, doi. 10.1007/s11664-020-08101-1

By:

Mishra, Prateek;
Srivastava, Vibhu;
Kumar, Mirgendar;
Sunny

Publication type:

Article

Thermoelectric Properties of Texture-Controlled (GeTe)<italic>x</italic>(AgSbTe2)100−<italic>x</italic> (<italic>x</italic> = 75, 80, 85, and 90) Alloys Fabricated by Gas-Atomization and Hot-Extrusion Processes

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 6, p. 3119, doi. 10.1007/s11664-017-5961-3

By:

Kim, Hyo-Seob;
Dharmaiah, Peyala;
Hong, Soon-Jik

Publication type:

Article

The Effect of Adding Nano-BiTe on Properties of GeTe-Based Thermoelectric Material.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 7, p. 1303, doi. 10.1007/s11664-012-2416-8

By:

Zhang, Lili;
Wang, Wei;
Ren, Baoguo;
Guo, Jinjuan

Publication type:

Article

Microstructure and Crystal Structure in TAGS Compositions.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 7, p. 1407, doi. 10.1007/s11664-009-0817-0

By:

Thompson, A. J.;
Sharp, J. W.;
Rawn, C. J.

Publication type:

Article

Broadband Airy Beam for Mid‐Infrared Wave Enabled by Ge3Sb2Te6 Metasurface.

Published in:

Annalen der Physik, 2024, v. 536, n. 5, p. 1, doi. 10.1002/andp.202300459

By:

Chen, Zijun;
Zhang, Runxuan;
Zhou, Zhesheng;
Nie, Ruixing;
Pan, Zimo;
Song, Zhengyong

Publication type:

Article

Photo-Seebeck measurement of Bi-doped amorphous germanium telluride oxide film.

Published in:

Journal of Materials Science: Materials in Electronics, 2023, v. 34, n. 8, p. 1, doi. 10.1007/s10854-023-10072-y

By:

Gholizadeh, A. Baset;
Byrne, Conor;
Walton, Alex S.;
Smith, Richard;
England, Jonathan;
Craig, Christopher;
Hewak, Dan;
Curry, Richard J.

Publication type:

Article

Photo-Seebeck study of amorphous germanium–tellurium-oxide films.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 24, p. 22000, doi. 10.1007/s10854-020-04702-y

By:

Gholizadeh, A. Baset;
Walton, Alex S.;
Smith, Richard;
England, Jonathan;
Craig, Christopher;
Hewak, Dan;
Curry, Richard J.

Publication type:

Article

Analysis of electron beam-induced effect on electrical switching properties of glass chalcogenide GeTe thin films through Raman spectroscopy.

Published in:

Applied Physics A: Materials Science & Processing, 2015, v. 119, n. 1, p. 49, doi. 10.1007/s00339-014-8841-1

By:

Sarkar, Deepangkar;
Sanjeev, Ganesh;
Mahesha, M.

Publication type:

Article

Ferromagnetism modulation by phase change in Mn-doped GeTe chalcogenide magnetic materials.

Published in:

Applied Physics A: Materials Science & Processing, 2014, v. 117, n. 4, p. 2115, doi. 10.1007/s00339-014-8627-5

By:

Adam, Adam;
Cheng, Xiaomin;
Guan, Xiawei;
Miao, Xiangshui

Publication type:

Article

Electrical conduction mechanisms of γ-irradiated amorphous germanium telluride films.

Published in:

Technical Physics, 1997, v. 42, n. 9, p. 1035, doi. 10.1134/1.1258782

By:

Dutsyak, I. S.

Publication type:

Article

Performance Comparison of Phase Change Materials and Metal-Insulator Transition Materials for Direct Current and Radio Frequency Switching Applications.

Published in:

Technologies (2227-7080), 2018, v. 6, n. 2, p. 48, doi. 10.3390/technologies6020048

By:

Mahanta, Protap;
Munna, Mohiuddin;
Coutu, Ronald A.

Publication type:

Article

A zero density change phase change memory material: GeTe-O structural characteristics upon crystallisation.

Published in:

Scientific Reports, 2015, p. 11150, doi. 10.1038/srep11150

By:

Zhou, Xilin;
Dong, Weiling;
Zhang, Hao;
Simpson, Robert E.

Publication type:

Article

High-Energy Mode-Locked Pulse Er-Doped Fiber Laser-Based GeTe as Saturable Absorber.

Published in:

Nanomaterials (2079-4991), 2023, v. 13, n. 16, p. 2331, doi. 10.3390/nano13162331

By:

Tang, Shouqian;
Sheng, Qiuyan;
Ye, Faming;
Li, Qi;
Xiong, Siyuan;
Bai, Caixun;
Lu, Cheng;
Zhang, Huanian;
Wang, Guomei;
Zhang, Wenfei

Publication type:

Article

Production of Size-Controlled Gold Nanoclusters for Vapor–Liquid–Solid Method.

Published in:

Nanomaterials (2079-4991), 2022, v. 12, n. 5, p. N.PAG, doi. 10.3390/nano12050763

By:

Saj, Alam;
Alketbi, Shaikha;
Ansari, Sumayya M.;
Anjum, Dalaver H.;
Mohammad, Baker;
Aldosari, Haila M.

Publication type:

Article

Tailoring the Structural and Optical Properties of Germanium Telluride Phase-Change Materials by Indium Incorporation.

Published in:

Nanomaterials (2079-4991), 2021, v. 11, n. 11, p. 3029, doi. 10.3390/nano11113029

By:

Wang, Xudong;
Shen, Xueyang;
Sun, Suyang;
Zhang, Wei

Publication type:

Article

Nanosecond-scale imaging of laser-induced crystallization of GeTe.

Published in:

2012

By:

Santala, M.;
Reed, B.;
LaGrange, T.;
Campbell, G.;
Topuria, T.;
Raoux, S.

Publication type:

Abstract

INVESTIGATION THE IMPACT OF DIFFERENT ANNEALING TEMPERATURES ON STRUCTURAL AND OPTICAL PROPERTIES OF BI-DOPED GETE (BI: 5 %) THIN FILMS FABRICATED BY PVD TECHNIQUE).

Published in:

Science Journal of University of Zakho, 2024, v. 12, n. 1, p. 95, doi. 10.25271/sjuoz.2024.12.1.1242

By:

Ahmed, Shayma Mohammed;
Jarjes, Azhen Hasan;
Abdulrahman, Ahmed Fattah;
Mohammed, Raghad Y.;
Ahmed, Sabah M.

Publication type:

Article

Tl2Te-Tl9BiTe6-Tl8GeTe5 SYSTEM.

Published in:

Chemical Problems / Kimya Problemləri, 2017, v. 15, n. 4, p. 355, doi. 10.32737/2221-8688-2017-4-355-363

By:

Alakbarova, T. M.;
Jafarov, Y. I.;
Mustafayeva, A. L.;
Babanly, M. B.

Publication type:

Article

Probing embedded topological modes in bulk-like GeTe-Sb2Te3 heterostructures.

Published in:

Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-76885-7

By:

Nakamura, Hisao;
Hofmann, Johannes;
Inoue, Nobuki;
Koelling, Sebastian;
Koenraad, Paul M.;
Mussler, Gregor;
Grützmacher, Detlev;
Narayan, Vijay

Publication type:

Article

Thermal Frequency Reconfigurable Electromagnetic Absorber Using Phase Change Material.

Published in:

Sensors (14248220), 2018, v. 18, n. 10, p. 3506, doi. 10.3390/s18103506

By:

Jeong, Heijun;
Park, Jeong-Heum;
Moon, You-Hwan;
Baek, Chang-Wook;
Lim, Sungjoon

Publication type:

Article

A Magnetoresistance Induced by a Nonzero Berry Phase in GeTe/Sb2Te3 Chalcogenide Superlattices.

Published in:

Advanced Functional Materials, 2017, v. 27, n. 40, p. n/a, doi. 10.1002/adfm.201702243

By:

Tominaga, Junji;
Saito, Yuta;
Mitrofanov, Kirill;
Inoue, Nobuki;
Fons, Paul;
Kolobov, Alexander V.;
Nakamura, Hisao;
Miyata, Noriyuki

Publication type:

Article

Disorder-Induced Localization in Crystalline Pseudo-Binary GeTe-Sb2Te3 Alloys between Ge3Sb2Te6 and GeTe.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 40, p. 6399, doi. 10.1002/adfm.201500848

By:

Jost, Peter;
Volker, Hanno;
Poitz, Annika;
Poltorak, Christian;
Zalden, Peter;
Schäfer, Tobias;
Lange, Felix R. L.;
Schmidt, Rüdiger M.;
Holländer, Bernd;
Wirtssohn, Matti R.;
Wuttig, Matthias

Publication type:

Article

Low-Temperature Transport in Crystalline Ge1Sb2Te4.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 40, p. 6390, doi. 10.1002/adfm.201500830

By:

Volker, Hanno;
Jost, Peter;
Wuttig, Matthias

Publication type:

Article

A Phase Change Material for Reconfigurable Circuit Applications.

Published in:

Applied Sciences (2076-3417), 2018, v. 8, n. 1, p. 130, doi. 10.3390/app8010130

By:

Tomer, Dushyant;
Coutu, Ronald A.

Publication type:

Article

Prediction of the Half Metallicity in Ferromagnetic Germanium Telluride (GeTe) Doped with Titanium.

Published in:

SPIN (2010-3247), 2021, v. 11, n. 1, p. N.PAG, doi. 10.1142/S201032472150003X

By:

Abdelli, Zeyneb;
Meddour, Athmane;
Bourouis, Chahrazed

Publication type:

Article

GeTe-TiC-C Composite Anodes for Li-Ion Storage.

Published in:

Materials (1996-1944), 2020, v. 13, n. 19, p. 4222, doi. 10.3390/ma13194222

By:

Kim, Woo Seob;
Vo, Thuan Ngoc;
Kim, Il Tae

Publication type:

Article

Detrimental Effects of Doping Al and Ba on the Thermoelectric Performance of GeTe.

Published in:

Materials (1996-1944), 2018, v. 11, n. 11, p. 2237, doi. 10.3390/ma11112237

By:

Srinivasan, Bhuvanesh;
Gellé, Alain;
Halet, Jean-François;
Boussard-Pledel, Catherine;
Bureau, Bruno

Publication type:

Article

IR spectra of tellurium germanate glasses and their structure.

Published in:

Journal of Applied Spectroscopy, 2007, v. 74, n. 1, p. 86, doi. 10.1007/s10812-007-0013-z

By:

Rachkovskaya, G.;
Zakharevich, G.

Publication type:

Article

Robust ferromagnetism in wafer-scale monolayer and multilayer Fe3GeTe2.

Published in:

NPJ 2D Materials & Applications, 2020, v. 4, n. 1, p. N.PAG, doi. 10.1038/s41699-020-00167-z

By:

Roemer, Ryan;
Liu, Chong;
Zou, Ke

Publication type:

Article

Shaping the role of germanium vacancies in germanium telluride: metastable cubic structure stabilization, band structure modification, and stable N-type conduction.

Published in:

NPG Asia Materials, 2020, v. 12, n. 1, p. 1, doi. 10.1038/s41427-020-00247-y

By:

Liu, Zihang;
Sato, Naoki;
Guo, Quansheng;
Gao, Weihong;
Mori, Takao

Publication type:

Article

Tunable Filters Using Defected Ground Structures at Millimeter-Wave Frequencies.

Published in:

Micromachines, 2025, v. 16, n. 1, p. 60, doi. 10.3390/mi16010060

By:

Annam, Kaushik;
Alemayehu, Birhanu;
Shin, Eunsung;
Subramanyam, Guru

Publication type:

Article

A Review on Material Selection Benchmarking in GeTe-Based RF Phase-Change Switches for Each Layer.

Published in:

Micromachines, 2024, v. 15, n. 3, p. 380, doi. 10.3390/mi15030380

By:

Qu, Sheng;
Gao, Libin;
Wang, Jiamei;
Chen, Hongwei;
Zhang, Jihua

Publication type:

Article

Tunable Electric Properties of Bilayer α-GeTe with Different Interlayer Distances and External Electric Fields.

Published in:

Nanoscale Research Letters, 2018, v. 13, n. 1, p. 1, doi. 10.1186/s11671-018-2813-x

By:

Zhang, Dingbo;
Zhou, Zhongpo;
Wang, Haiying;
Yang, Zongxian;
Liu, Chang

Publication type:

Article

SYNTHESIS AND CRYSTALLOGRAPHIC STUDY OF THE TERNARY SEMICONDUCTOR COMPOUND Fe2 GeTe4.

Published in:

Chalcogenide Letters, 2010, v. 7, n. 2, p. 133

By:

Delgado, G. E.;
Betancourt, L.;
Mora, A. J.;
Contreras, J. E.;
Grima-Gallardo, P.;
Quintero, M.

Publication type:

Article

Organotellurides as Precursors of Reactive Organometallics.

Published in:

Phosphorus, Sulfur & Silicon & the Related Elements, 2008, v. 183, n. 4, p. 939, doi. 10.1080/10426500801898440

By:

Comasseto, João V.;
Dos Santos, Alcindo A.

Publication type:

Article

Investigation of High-Efficiency and Stable Carbon-Perovskite/Silicon and Carbon-Perovskite/CIGS-GeTe Tandem Solar Cells.

Published in:

Energies (19961073), 2023, v. 16, n. 4, p. 1676, doi. 10.3390/en16041676

By:

Saeed, Ahmed;
Salah, Mostafa M.;
Zekry, Abdelhalim;
Mousa, Mohamed;
Shaker, Ahmed;
Abouelatta, Mohamed;
Amer, Fathy Z.;
Mubarak, Roaa I.;
Louis, Dalia S.

Publication type:

Article

Laser desorption time-of-flight mass spectrometry of atomic switch memory Ge2Sb2Te5 bulk materials and its thin films.

Published in:

Rapid Communications in Mass Spectrometry: RCM, 2014, v. 28, n. 7, p. 699, doi. 10.1002/rcm.6833

By:

Houška, Jan;
Peña‐Méndez, Eladia Maria;
Kolář, Jakub;
Přikryl, Jan;
Pavlišta, Martin;
Frumar, Miloslav;
Wágner, Tomáš;
Havel, Josef

Publication type:

Article

Structural and electronic properties of GeTe under pressure: ab initio study.

Published in:

Materials Technology, 2013, v. 28, n. 6, p. 305, doi. 10.1179/1753555713Y.0000000075

By:

Yang, Y L

Publication type:

Article

Transient Structural Transition in Ovonic Threshold Switching Glass.

Published in:

Advanced Functional Materials, 2025, v. 35, n. 14, p. 1, doi. 10.1002/adfm.202415462

By:

Seong, Yeon‐Woo;
Kwon, Hoedon;
Lee, Changwoo;
Lim, Hyeonwook;
Jeong, Kwnagsik;
Shin, Hee Jun;
Cho, Mann‐Ho

Publication type:

Article

Trends in GeTe Thermoelectrics: From Fundamentals to Applications.

Published in:

Advanced Functional Materials, 2024, v. 34, n. 39, p. 1, doi. 10.1002/adfm.202403498

By:

Li, Meng;
Shi, Xiao‐Lei;
Chen, Zhi‐Gang

Publication type:

Article