Works matching DE "GERMANIUM silicide"

Results: 13

Vertical ordering of islands in Ge-Si multilayers.

Published in:

Applied Physics A: Materials Science & Processing, 1996, v. 62, n. 6, p. 575, doi. 10.1007/BF01571696

By:

Rahmati, B.;
Jäger, W.;
Trinkaus, H.;
Loo, R.;
Vescan, L.;
Lüth, H.

Publication type:

Article

Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer.

Published in:

Semiconductors, 2015, v. 49, n. 8, p. 1104, doi. 10.1134/S1063782615080059

By:

Baidakova, N.;
Bobrov, A.;
Drozdov, M.;
Novikov, A.;
Pavlov, D.;
Shaleev, M.;
Yunin, P.;
Yurasov, D.;
Krasilnik, Z.

Publication type:

Article

Photodiodes based on self-assembled GeSi/Si(001) nanoisland arrays grown by the combined sublimation molecular-beam epitaxy of silicon and vapor-phase epitaxy of germanium.

Published in:

Semiconductors, 2015, v. 49, n. 3, p. 387, doi. 10.1134/S1063782615030082

By:

Filatov, D.;
Gorshkov, A.;
Volkova, N.;
Guseinov, D.;
Alyabina, N.;
Ivanova, M.;
Chalkov, V.;
Denisov, S.;
Shengurov, V.

Publication type:

Article

Crystal growth kinetics in GeS amorphous thin films.

Published in:

Journal of Thermal Analysis & Calorimetry, 2014, v. 118, n. 2, p. 775, doi. 10.1007/s10973-014-3764-9

By:

Podzemná, Veronika;
Barták, Jaroslav;
Málek, Jiří

Publication type:

Article

Morphology and growth of capped Ge/Si quantum dots.

Published in:

Journal of Nanoparticle Research, 2013, v. 15, n. 5, p. 1, doi. 10.1007/s11051-013-1608-3

By:

Yacoby, Yizhak;
Elfassy, Naomi;
Ray, Samit;
Singha, Raj;
Das, Samaresh;
Cohen, Eyal;
Yochelis, Shira;
Clarke, Roy;
Paltiel, Yossi

Publication type:

Article

Germanium-silicon as a flow path tracer: Application to the Rio Icacos watershed.

Published in:

Water Resources Research, 2011, v. 47, n. 6, p. n/a, doi. 10.1029/2010WR009853

By:

Kurtz, Andrew C.;
Lugolobi, Festo;
Salvucci, Guido

Publication type:

Article

Relaxation of photovoltage in ITO-Ge-Si heterojunction with Ge nanostructured thin films.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 2, p. 259, doi. 10.15407/spqeo20.02.259

By:

Iliash, S. A.;
Hyrka, Yu. V.;
Kondratenko, S. V.;
Lysenko, V. S.;
Kozyrev, Yu. M.;
Lendel, V. V.

Publication type:

Article

Drift correction of the analyzed area during the study of the lateral elemental composition distribution in single semiconductor nanostructures by scanning Auger microscopy.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 4, p. 321, doi. 10.15407/spqeo19.04.321

By:

Ponomaryov, S. S.;
Yukhymchuk, V. O.;
Valakh, M. Ya.

Publication type:

Article

Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge1-XSiX heterostructure.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 4, p. 357

By:

Abbasov, Sh. M.;
Aghaverdiyeva, G. T.;
Ibrahimov, Z. A.;
Farajova, U. F.;
Ibrahimova, R. A.;
Mehdevi, Heyder

Publication type:

Article

Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate.

Published in:

Nanoscale Research Letters, 2018, v. 13, n. 1, p. 1, doi. 10.1186/s11671-018-2587-1

By:

Al-Saigh, Reem;
Baira, Mourad;
Salem, Bassem;
Ilahi, Bouraoui

Publication type:

Article

Universal Frequency Dependence of the Hopping AC Conductance in <italic>p</italic>-Ge/GeSi Structures in the Integer Quantum Hall Effect Regime.

Published in:

Journal of Experimental & Theoretical Physics, 2018, v. 126, n. 2, p. 246, doi. 10.1134/S1063776118010144

By:

Drichko, I. L.;
Dmitriev, A. A.;
Malysh, V. A.;
Smirnov, I. Yu.;
Galperin, Yu. M.;
von Känel, H.;
Kummer, M.;
Isella, G.;
Chrastina, D.

Publication type:

Article

Experimental observation of motion of edge dislocations in Ge/GeSi/Si(001) ( x = 0.2-0.6) heterostructures.

Published in:

Journal of Experimental & Theoretical Physics, 2016, v. 123, n. 5, p. 832, doi. 10.1134/S1063776116110042

By:

Bolkhovityanov, Yu.;
Gutakovskii, A.;
Deryabin, A.;
Sokolov, L.

Publication type:

Article

Spark plasma sintering of a p-type Si1-xGex alloy: identification of the densification mechanism by isothermal and anisothermal methods.

Published in:

Journal of Materials Science, 2012, v. 47, n. 10, p. 4313, doi. 10.1007/s10853-012-6282-9

By:

Bernard-Granger, Guillaume;
Néri, Amandine;
Navone, Christelle;
Soulier, Mathieu;
Simon, Julia;
Marinova-Atanassova, Maya

Publication type:

Article

Works matching DE "GERMANIUM silicide"

Vertical ordering of islands in Ge-Si multilayers.

Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer.

Photodiodes based on self-assembled GeSi/Si(001) nanoisland arrays grown by the combined sublimation molecular-beam epitaxy of silicon and vapor-phase epitaxy of germanium.

Crystal growth kinetics in GeS amorphous thin films.

Morphology and growth of capped Ge/Si quantum dots.

Germanium-silicon as a flow path tracer: Application to the Rio Icacos watershed.

Relaxation of photovoltage in ITO-Ge-Si heterojunction with Ge nanostructured thin films.

Drift correction of the analyzed area during the study of the lateral elemental composition distribution in single semiconductor nanostructures by scanning Auger microscopy.

Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge<sub>1-X</sub>Si<sub>X</sub> heterostructure.

Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate.

Universal Frequency Dependence of the Hopping AC Conductance in <italic>p</italic>-Ge/GeSi Structures in the Integer Quantum Hall Effect Regime.

Experimental observation of motion of edge dislocations in Ge/GeSi/Si(001) ( x = 0.2-0.6) heterostructures.

Spark plasma sintering of a p-type Si<sub>1-x</sub>Ge<sub>x</sub> alloy: identification of the densification mechanism by isothermal and anisothermal methods.