Works matching DE "GERMANIUM silicide"
Results: 13
Spark plasma sintering of a p-type Si<sub>1-x</sub>Ge<sub>x</sub> alloy: identification of the densification mechanism by isothermal and anisothermal methods.
- Published in:
- Journal of Materials Science, 2012, v. 47, n. 10, p. 4313, doi. 10.1007/s10853-012-6282-9
- By:
- Publication type:
- Article
Universal Frequency Dependence of the Hopping AC Conductance in <italic>p</italic>-Ge/GeSi Structures in the Integer Quantum Hall Effect Regime.
- Published in:
- Journal of Experimental & Theoretical Physics, 2018, v. 126, n. 2, p. 246, doi. 10.1134/S1063776118010144
- By:
- Publication type:
- Article
Experimental observation of motion of edge dislocations in Ge/GeSi/Si(001) ( x = 0.2-0.6) heterostructures.
- Published in:
- Journal of Experimental & Theoretical Physics, 2016, v. 123, n. 5, p. 832, doi. 10.1134/S1063776116110042
- By:
- Publication type:
- Article
Germanium-silicon as a flow path tracer: Application to the Rio Icacos watershed.
- Published in:
- Water Resources Research, 2011, v. 47, n. 6, p. n/a, doi. 10.1029/2010WR009853
- By:
- Publication type:
- Article
Crystal growth kinetics in GeS amorphous thin films.
- Published in:
- Journal of Thermal Analysis & Calorimetry, 2014, v. 118, n. 2, p. 775, doi. 10.1007/s10973-014-3764-9
- By:
- Publication type:
- Article
Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer.
- Published in:
- Semiconductors, 2015, v. 49, n. 8, p. 1104, doi. 10.1134/S1063782615080059
- By:
- Publication type:
- Article
Photodiodes based on self-assembled GeSi/Si(001) nanoisland arrays grown by the combined sublimation molecular-beam epitaxy of silicon and vapor-phase epitaxy of germanium.
- Published in:
- Semiconductors, 2015, v. 49, n. 3, p. 387, doi. 10.1134/S1063782615030082
- By:
- Publication type:
- Article
Vertical ordering of islands in Ge-Si multilayers.
- Published in:
- Applied Physics A: Materials Science & Processing, 1996, v. 62, n. 6, p. 575, doi. 10.1007/BF01571696
- By:
- Publication type:
- Article
Relaxation of photovoltage in ITO-Ge-Si heterojunction with Ge nanostructured thin films.
- Published in:
- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 2, p. 259, doi. 10.15407/spqeo20.02.259
- By:
- Publication type:
- Article
Drift correction of the analyzed area during the study of the lateral elemental composition distribution in single semiconductor nanostructures by scanning Auger microscopy.
- Published in:
- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 4, p. 321, doi. 10.15407/spqeo19.04.321
- By:
- Publication type:
- Article
Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge<sub>1-X</sub>Si<sub>X</sub> heterostructure.
- Published in:
- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 4, p. 357
- By:
- Publication type:
- Article
Morphology and growth of capped Ge/Si quantum dots.
- Published in:
- Journal of Nanoparticle Research, 2013, v. 15, n. 5, p. 1, doi. 10.1007/s11051-013-1608-3
- By:
- Publication type:
- Article
Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate.
- Published in:
- Nanoscale Research Letters, 2018, v. 13, n. 1, p. 1, doi. 10.1186/s11671-018-2587-1
- By:
- Publication type:
- Article