Works matching DE "GERMANIUM selenide"
Results: 34
Metallization in the molten and solid state and phase diagrams of the GeSe and GeS under high pressure.
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- JETP Letters, 2014, v. 100, n. 7, p. 451, doi. 10.1134/S0021364014190023
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CsCl Modified Ge-Ga-S Glasses Codoped with Eu<sup>2+</sup> and Mn<sup>2+</sup>: A Potential Yellow Phosphor for Solid-State Lighting.
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- Journal of the American Ceramic Society, 2012, v. 95, n. 12, p. 3719, doi. 10.1111/jace.12031
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PHOTOINDUCED MASS TRANSPORT IN Ge-Se AMORPHOUS FILMS.
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- Chalcogenide Letters, 2018, v. 15, n. 1, p. 35
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Preparation, Formation Mechanism, and Photoresponse Properties of GeSe Microtubes with a Rectangular Cross Section.
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- ChemPlusChem, 2015, v. 80, n. 3, p. 630, doi. 10.1002/cplu.201402333
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Structural correlation of the chalcogenide GeSe glass.
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- Applied Physics A: Materials Science & Processing, 2017, v. 123, n. 1, p. 1, doi. 10.1007/s00339-016-0720-5
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First-Principles Study on the Stabilities, Electronic and Optical Properties of GexSn1-xSe Alloys.
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- Nanomaterials (2079-4991), 2018, v. 8, n. 11, p. 876, doi. 10.3390/nano8110876
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Influence of Ge Incorporation from GeSe<sub>2</sub> Vapor on the Properties of Cu2ZnSn(S,Se)<sub>4</sub> Material and Solar Cells.
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- Coatings (2079-6412), 2018, v. 8, n. 9, p. 304, doi. 10.3390/coatings8090304
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Facile Synthesis, Characterization, Nanocrystal Growth and Photoluminescence Properties of GeS Nanowires.
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- NANO, 2016, v. 11, n. 12, p. -1, doi. 10.1142/S179329201650140X
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Short-range order of germanium selenide glass.
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- Bulletin of Materials Science, 2015, v. 38, n. 1, p. 111, doi. 10.1007/s12034-014-0824-5
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Effect of composition on optical properties of GeSe-SbSe-ZnSe thin films.
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- Bulletin of Materials Science, 2014, v. 37, n. 6, p. 1255, doi. 10.1007/s12034-014-0070-x
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High-Temperature Crystal Structure and Chemical Bonding in Thermoelectric Germanium Selenide (GeSe).
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- Chemistry - A European Journal, 2017, v. 23, n. 28, p. 6888, doi. 10.1002/chem.201700536
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Suppression of Photonic Band Gap in Hetero-structure of PZT Ceramic with Nonlinear Photonic crystals.
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- Journal of Active & Passive Electronic Devices, 2013, v. 8, n. 4, p. 333
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Short-range order of germanium selenide glass.
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- Glass Physics & Chemistry, 2015, v. 41, n. 5, p. 453, doi. 10.1134/S1087659615050090
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Healable Structure Triggered by Thermal/Electrochemical Force in Layered GeSe<sub>2</sub> for High Performance Li‐Ion Batteries.
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- Advanced Energy Materials, 2018, v. 8, n. 18, p. 1, doi. 10.1002/aenm.201703635
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First-principles study of bandgap tuning in Ge<sub>1-x</sub>Pb<sub>x</sub>Se.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2018, v. 32, n. 7, p. 1, doi. 10.1142/S0217979218500765
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Resistive and New Optical Switching Memory Characteristics Using Thermally Grown GeSe Film in Cu/GeSe/W Structure.
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- Nanoscale Research Letters, 2015, v. 10, n. 1, p. 1, doi. 10.1186/s11671-015-1090-1
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Synthesis of CuZnGeS thin film via sulfurization of RF magnetron sputtered precursor.
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- Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 6, p. 3984, doi. 10.1007/s10854-015-2934-2
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Static Structure of Liquid GeSe Under Pressure: Ab Initio Molecular Dynamics Simulations.
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- Physica Status Solidi (B), 2018, v. 255, n. 11, p. N.PAG, doi. 10.1002/pssb.201800103
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Proton Beam Effects on Ge–Se/Ag Thin Films.
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- Physica Status Solidi (B), 2018, v. 255, n. 6, p. 1, doi. 10.1002/pssb.201700453
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The Effect of Indium Content on the Atomic Environment and Cluster Stability of GeSe<sub>4</sub>In<sub>x=10,15</sub> Glasses.
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- Metals (2075-4701), 2015, v. 5, n. 1, p. 102, doi. 10.3390/met5010102
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Synthesis, formation mechanism and photoelectric properties of GeS nanosheets and nanowires.
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- Journal of Applied Crystallography, 2014, v. 47, n. 2, p. 527, doi. 10.1107/S1600576713034535
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High Thermoelectric Performance of New Rhombohedral Phase of GeSe stabilized through Alloying with AgSbSe<sub>2</sub>.
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- Angewandte Chemie, 2017, v. 129, n. 45, p. 14301, doi. 10.1002/ange.201708134
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Analysis of composition and temperature dependence of some thermal transport properties in glassy GeSeSn alloys using transient plane source technique.
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- Journal of Thermal Analysis & Calorimetry, 2016, v. 124, n. 1, p. 1, doi. 10.1007/s10973-015-4889-1
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Ultrafast electron energy-dependent delocalization dynamics in germanium selenide.
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- Communications Physics, 2021, v. 4, n. 1, p. 1, doi. 10.1038/s42005-021-00635-y
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Optically trapped delayed elasticity in germanium selenide glass fibers.
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- International Journal of Applied Glass Science, 2019, v. 10, n. 2, p. 235, doi. 10.1111/ijag.12977
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Photo- and thermally-induced changes in the optical properties of Ge-S-Se amorphous films.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 4, p. 349
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Band Structure and Photoelectric Characterization of GeSe Monolayers.
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- Advanced Functional Materials, 2018, v. 28, n. 6, p. 1, doi. 10.1002/adfm.201704855
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Ultrathin 2D GeSe<sub>2</sub> Rhombic Flakes with High Anisotropy Realized by Van der Waals Epitaxy.
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- Advanced Functional Materials, 2017, v. 27, n. 47, p. n/a, doi. 10.1002/adfm.201703858
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Phase equilibria in the AgSe-GeSe-SnSe system and thermodynamic properties of AgGeSnSe solid solutions.
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- Inorganic Materials, 2017, v. 53, n. 8, p. 786, doi. 10.1134/S0020168517080027
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Effect of Bi doping on the structure and conduction mechanism of amorphous GeSe films.
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- Inorganic Materials, 2013, v. 49, n. 7, p. 647, doi. 10.1134/S0020168513060095
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Photoluminescence properties of thallium-containing GeSe and GeSe vitreous semiconductors.
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- Semiconductors, 2016, v. 50, n. 2, p. 158, doi. 10.1134/S1063782616020044
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X-ray fluorescence analysis of GeSe, AsSe, and GeAsSe glasses using electronic excitation.
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- Semiconductors, 2015, v. 49, n. 10, p. 1352, doi. 10.1134/S1063782615100255
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Determination of the composition of multicomponent chalcogenide semiconductors by X-ray fluorescence analysis.
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- Semiconductors, 2014, v. 48, n. 2, p. 257, doi. 10.1134/S1063782614020055
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Structural relaxation of glassy GeSe during isothermal annealing below and above T.
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- Technical Physics, 2015, v. 60, n. 4, p. 510, doi. 10.1134/S1063784215040039
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