Works matching DE "GERMANIUM crystals"
1
- Journal of Materials Science Letters, 2003, v. 22, n. 14, p. 985, doi. 10.1023/A:1024724922435
- Solanki, G. K.;
- Deshpande, M. P.;
- Agarwal, M. K.;
- Patel, P. D.;
- Vaidya, S. N.
- Article
2
- Semiconductors, 2001, v. 35, n. 8, p. 864, doi. 10.1134/1.1393016
- Litvinov, V. V.;
- Murin, L. I.;
- Lindström, L.;
- Markevich, V. P.;
- Klechko, A. A.
- Article
3
- Semiconductors, 1999, v. 33, n. 11, p. 1163, doi. 10.1134/1.1187840
- Klechko, A. A.;
- Litvinov, V. V.;
- Markevich, V. P.;
- Murin, L. I.
- Article
4
- Journal of Phase Equilibria & Diffusion, 2011, v. 32, n. 5, p. 455, doi. 10.1007/s11669-011-9921-y
- Article
5
- Rocks & Minerals, 2015, v. 90, n. 5, p. 440, doi. 10.1080/00357529.2015.1059082
- Article
6
- Nature, 2005, v. 437, n. 7059, p. 716, doi. 10.1038/nature04097
- Xiaodong Zou;
- Conradsson, Tony;
- Klingstedt, Miia;
- Dadachov, Mike S.;
- O'Keeffe, Michael
- Article
7
- Applied Physics A: Materials Science & Processing, 2004, v. 78, n. 8, p. 1181, doi. 10.1007/s00339-003-2482-0
- Heng, C. L.;
- Tjiu, W. W.;
- Finstad, T. G.
- Article
8
- Surface Review & Letters, 2002, v. 9, n. 5/6, p. 1809, doi. 10.1142/S0218625X02004499
- Takeuchi, Noboru;
- Falkenberg, G.;
- Johnson, R. L.
- Article
9
- Physics of Atomic Nuclei, 2009, v. 72, n. 3, p. 477, doi. 10.1134/S1063778809030119
- Akhmetshin, R. R.;
- Grigoriev, D. N.;
- Kazanin, V. F.;
- Tsaregorodtsev, S. M.;
- Yudin, Yu. V.
- Article
10
- Journal of Electronic Materials, 2008, v. 37, n. 2, p. 167, doi. 10.1007/s11664-007-0305-3
- Li-Wen Lai;
- Hsin-Ying Lee;
- Jun-Hung Cheng;
- Ching-Ting Lee
- Article
11
- Crystallography Reports, 2014, v. 59, n. 3, p. 415, doi. 10.1134/S1063774514020114
- Kyazimova, V.;
- Alekperov, A.;
- Zakhrabekova, Z.;
- Azhdarov, G.
- Article
12
- Crystallography Reports, 2013, v. 58, n. 3, p. 480, doi. 10.1134/S1063774513030267
- Article
13
- Crystallography Reports, 2011, v. 56, n. 3, p. 531, doi. 10.1134/S1063774511030023
- Azhdarov, G.;
- Zeynalov, Z.;
- Agamaliyev, Z.;
- Mamedova, S.
- Article
14
- Crystallography Reports, 2006, v. 51, n. 5, p. 729, doi. 10.1134/S1063774506050026
- Blagov, A. E.;
- Kovalchuk, M. V.;
- Kohn, V. G.;
- Pisarevsky, Yu. V.
- Article
15
- Crystallography Reports, 2005, v. 50, n. 7, p. S22, doi. 10.1134/1.2133967
- Ivanov, B. G.;
- Kaeva, E. S.
- Article
16
- Crystallography Reports, 2005, v. 50, n. 7, p. S46, doi. 10.1134/1.2133971
- Kaplunov, I. A.;
- Kolesnikov, A. I.;
- Shaǐovich, S. L.
- Article
17
- Crystallography Reports, 2003, v. 48, n. 5, p. 888, doi. 10.1134/1.1612611
- Ilyushin, G.D.;
- Dem'yanets, L.N.
- Article
18
- Crystallography Reports, 2000, v. 45, n. 1, p. 161, doi. 10.1134/1.171156
- Kartavykh, A. V.;
- Kopeliovich, É. S.;
- Milvidskiı, M. G.;
- Rakov, V. V.
- Article
19
- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 11, p. 2867, doi. 10.1002/pssa.201600383
- Grachev, D. A.;
- Ershov, A. V.;
- Belolipetsky, A. V.;
- Krasilnikova, L. V.;
- Yablonskiy, A. N.;
- Andreev, B. A.;
- Gusev, O. B.
- Article
20
- Physica Status Solidi. A: Applications & Materials Science, 2014, v. 211, n. 1, p. 131, doi. 10.1002/pssa.201300175
- Kreiliger, Thomas;
- Falub, Claudiu V.;
- Taboada, Alfonso G.;
- Isa, Fabio;
- Cecchi, Stefano;
- Kaufmann, Rolf;
- Niedermann, Philippe;
- Pezous, Aurélie;
- Mouaziz, Schahrazède;
- Dommann, Alex;
- Isella, Giovanni;
- von Känel, Hans
- Article
21
- Chemistry, Physics & Technology of Surface / Khimiya, Fizyka ta Tekhnologiya Poverhni, 2011, v. 2, n. 3, p. 249
- Savchenko, N. D.;
- Shchurova, T. N.;
- Opachko, I. I.;
- Panait, T. I.;
- Popovic, K. O.
- Article
22
- Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 831, doi. 10.1002/pssr.201307248
- Bansen, Roman;
- Schmidtbauer, Jan;
- Juda, Uta;
- Markurt, Toni;
- Teubner, Thomas;
- Heimburger, Robert;
- Boeck, Torsten
- Article
23
- Metallurgical & Materials Transactions. Part A, 2007, v. 38, n. 1, p. 100, doi. 10.1007/s11661-006-9013-5
- Deal, Andrew;
- Balicki, Ercan;
- Abbaschian, Reza
- Article
24
- Journal of Radioanalytical & Nuclear Chemistry, 2012, v. 292, n. 3, p. 1229, doi. 10.1007/s10967-012-1665-6
- Çelik, N.;
- Çevik, U.;
- Küçükömeroğlu, B.
- Article
25
- Journal of Radioanalytical & Nuclear Chemistry, 2003, v. 257, n. 3, p. 463
- Article
26
- Inorganic Materials, 2012, v. 48, n. 5, p. 462, doi. 10.1134/S0020168512050068
- Article
27
- JETP Letters, 2015, v. 101, n. 12, p. 840, doi. 10.1134/S0021364015120024
- Babenko, P.;
- Zinov'ev, A.;
- Shergin, A.
- Article
28
- JETP Letters, 2015, v. 101, n. 10, p. 670, doi. 10.1134/S0021364015100021
- Antonov, N.;
- Viktorov, V.;
- Gapienko, V.;
- Gapienko, G.;
- Gres', V.;
- Ilyushin, M.;
- Korotkov, V.;
- Mysnik, A.;
- Prudkoglyad, A.;
- Semak, A.;
- Terekhov, V.;
- Uglekov, V.;
- Ukhanov, M.;
- Chuiko, B.;
- Shimanskii, S.
- Article
29
- Applied Physics A: Materials Science & Processing, 2018, v. 124, n. 5, p. 1, doi. 10.1007/s00339-018-1803-2
- Yang, Gang;
- Kooi, Kyler;
- Wang, Guojian;
- Mei, Hao;
- Li, Yangyang;
- Mei, Dongming
- Article
30
- Applied Physics A: Materials Science & Processing, 2012, v. 108, n. 3, p. 657, doi. 10.1007/s00339-012-6947-x
- Article
31
- Applied Physics A: Materials Science & Processing, 2012, v. 108, n. 2, p. 415, doi. 10.1007/s00339-012-6901-y
- Article
32
- Applied Physics A: Materials Science & Processing, 2011, v. 105, n. 4, p. 903, doi. 10.1007/s00339-011-6557-z
- Jiang, Y.;
- Liu, P.;
- Liang, Y.;
- Li, H.;
- Yang, G.
- Article
33
- Applied Physics A: Materials Science & Processing, 2009, v. 96, n. 1, p. 91, doi. 10.1007/s00339-009-5187-1
- Uschmann, I.;
- Kämpfer, T.;
- Zamponi, F.;
- Lübcke, A.;
- Zastrau, U.;
- Loetzsch, R.;
- Höfer, S.;
- Morak, A.;
- Förster, E.
- Article
34
- Journal of Low Temperature Physics, 2016, v. 184, n. 3/4, p. 845, doi. 10.1007/s10909-016-1532-x
- Foerster, N.;
- Broniatowski, A.;
- Eitel, K.;
- Marnieros, S.;
- Paul, B.;
- Piro, M.-C.;
- Siebenborn, B.
- Article
35
- Journal of Low Temperature Physics, 2014, v. 176, n. 5/6, p. 860, doi. 10.1007/s10909-014-1091-y
- Article
36
- Journal of Low Temperature Physics, 2014, v. 176, n. 5/6, p. 796, doi. 10.1007/s10909-014-1088-6
- Piro, M.-C.;
- Broniatowski, A.;
- Marnieros, S.;
- Dumoulin, L.;
- Olivieri, E.
- Article
37
- Journal of Low Temperature Physics, 2014, v. 176, n. 3/4, p. 209, doi. 10.1007/s10909-013-1050-z
- Mirabolfathi, N.;
- Amman, M.;
- Faiez, D.;
- Luke, P.;
- Martin, R.;
- Rolla, J.;
- Sadoulet, B.;
- Serfass, B.;
- Vetter, K.
- Article
38
- Journal of Low Temperature Physics, 2014, v. 176, n. 3/4, p. 188, doi. 10.1007/s10909-013-1064-6
- Sundqvist, K.;
- Phipps, A.;
- Dixit, A.;
- Sadoulet, B.
- Article
39
- Journal of Low Temperature Physics, 2012, v. 167, n. 5/6, p. 1167, doi. 10.1007/s10909-012-0584-9
- Al Kenany, S.;
- Rolla, Julie;
- Godfrey, Gary;
- Brink, Paul;
- Seitz, Dennis;
- Figueroa-Feliciano, Enectali;
- Huber, Martin;
- Hines, Bruce;
- Irwin, Kent
- Article
40
- Journal of Low Temperature Physics, 2012, v. 167, n. 5/6, p. 1149, doi. 10.1007/s10909-012-0535-5
- Domange, J.;
- Olivieri, E.;
- Broniatowski, A.
- Article
41
- Journal of Low Temperature Physics, 2012, v. 167, n. 5/6, p. 1125, doi. 10.1007/s10909-012-0460-7
- Chagani, H.;
- Bauer, D.;
- Brandt, D.;
- Brink, P.;
- Cabrera, B.;
- Cherry, M.;
- Do Couto e Silva, E.;
- Godfrey, G.;
- Hall, J.;
- Hansen, S.;
- Hasi, J.;
- Kelsey, M.;
- Kenney, C.;
- Mandic, V.;
- Nagasawa, D.;
- Novak, L.;
- Mirabolfathi, N.;
- Partridge, R.;
- Radpour, R.;
- Resch, R.
- Article
42
- Journal of Low Temperature Physics, 2012, v. 167, n. 3/4, p. 202, doi. 10.1007/s10909-011-0449-7
- Shank, B.;
- Nagasawa, D.;
- Yen, J.;
- Cherry, M.;
- Young, B.
- Article
43
- Semiconductors, 2018, v. 52, n. 3, p. 390, doi. 10.1134/S1063782618030107
- Esin, M. Yu.;
- Nikiforov, A. I.;
- Timofeev, V. A.;
- Tuktamyshev, A. R.;
- Mashanov, V. I.;
- Loshkarev, I. D.;
- Deryabin, A. S.;
- Pchelyakov, O. P.
- Article
44
- Semiconductors, 2018, v. 52, n. 2, p. 264, doi. 10.1134/S1063782618020161
- Shimanskii, A.;
- Pavlyuk, T.;
- Kopytkova, S.;
- Filatov, R.;
- Gorodishcheva, A.
- Article
45
- Semiconductors, 2018, v. 52, n. 2, p. 268, doi. 10.1134/S1063782618020215
- Tyschenko, I.;
- Krivyakin, G.;
- Volodin, V.
- Article
46
- Semiconductors, 2017, v. 51, n. 10, p. 1274, doi. 10.1134/S1063782617100098
- Gert, A.;
- Nestoklon, M.;
- Prokofiev, A.;
- Yassievich, I.
- Article
47
- Semiconductors, 2015, v. 49, n. 5, p. 574, doi. 10.1134/S1063782615050140
- Luniov, S.;
- Burban, O.;
- Nazarchuk, P.
- Article
48
- Semiconductors, 2012, v. 46, n. 5, p. 611, doi. 10.1134/S1063782612050156
- Litvinov, V.;
- Petukh, A.;
- Pokotilo, Ju.;
- Markevich, V.;
- Lastovskii, S.
- Article
49
- Analytical & Bioanalytical Chemistry, 2012, v. 401, n. 10, p. 3263, doi. 10.1007/s00216-011-5418-0
- Belbachir, Karima;
- Lecomte, Sophie;
- Ta, Ha-Phuong;
- Petibois, Cyril;
- Desbat, Bernard
- Article
50
- Journal of Experimental & Theoretical Physics, 2005, v. 101, n. 5, p. 770, doi. 10.1134/1.2149057
- Blagov, A. E.;
- Koval’chuk, M. V.;
- Kohn, V. G.;
- Lider, V. V.;
- Pisarevskiı, Yu. V.
- Article