Low current consuming thermally stable sulphide phase change memory.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 7, p. 4763, doi. 10.1007/s10854-015-3089-x
- By:
- Publication type:
- Article
Works matching DE "GERMANIUM antimony telluride"
Results: 15
1
2
Electronic Structure and Spin Configuration Trends of Single Transition Metal Impurity in Phase Change Material.
- Published in:
- Journal of Electronic Materials, 2016, v. 45, n. 10, p. 5158, doi. 10.1007/s11664-016-4746-4
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- Publication type:
- Article
3
Effects of Sn Substitution on Thermoelectric Properties of GeSbTe.
- Published in:
- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 1077, doi. 10.1007/s11664-015-4221-7
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- Publication type:
- Article
4
Structure and Thermoelectric Properties of Te-Ag-Ge-Sb (TAGS) Materials Obtained by Reduction of Melted Oxide Substrates.
- Published in:
- Journal of Electronic Materials, 2016, v. 45, n. 2, p. 1085, doi. 10.1007/s11664-015-4251-1
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- Publication type:
- Article
5
Effect of InP Doping on the Phase Transition of Thin GeSbTe Films.
- Published in:
- Journal of Electronic Materials, 2015, v. 44, n. 8, p. 2712, doi. 10.1007/s11664-015-3734-4
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- Publication type:
- Article
6
Displays: Phase-changing pixels.
- Published in:
- Nature Photonics, 2014, v. 8, n. 9, p. 674, doi. 10.1038/nphoton.2014.200
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- Publication type:
- Article
7
Information on real-structure phenomena in metastable GeTe-rich germanium antimony tellurides (GeTe)<sub>n</sub>Sb<sub>2</sub>Te<sub>3</sub> (n ≥ 3) by semi-quantitative analysis of diffuse X-ray scattering.
- Published in:
- Zeitschrift für Kristallographie. Crystalline Materials, 2015, v. 230, n. 6, p. 369, doi. 10.1515/zkri-2014-1829
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- Publication type:
- Article
8
Molecular beam epitaxial growth of oriented and uniform GeSbTe nanoparticles with compact dimensions.
- Published in:
- Journal of Nanoparticle Research, 2017, v. 19, n. 2, p. 1, doi. 10.1007/s11051-017-3759-0
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- Publication type:
- Article
9
Real structure of Ge<sub>4</sub>Bi<sub>2</sub>Te<sub>7</sub>: refinement on diffuse scattering data with the 3D-ΔPDF method.
- Published in:
- Journal of Applied Crystallography, 2015, v. 48, n. 1, p. 200, doi. 10.1107/S1600576714027824
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- Publication type:
- Article
10
Deposition and Characterization of CVD-Grown Ge-Sb Thin Film Device for Phase-Change Memory Application.
- Published in:
- Advances in OptoElectronics, 2012, p. 1, doi. 10.1155/2012/840348
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- Publication type:
- Article
11
The mechanism of texture formation during crystallization process of Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> thin films.
- Published in:
- Crystal Research & Technology, 2017, v. 52, n. 2, p. n/a, doi. 10.1002/crat.201600243
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- Publication type:
- Article
12
Near-Infrared Tunable Reflection and Absorption Using Nanostructured Thin Film Structures Employing Phase-Change Material.
- Published in:
- 2016
- By:
- Publication type:
- Conference Paper/Materials
13
Direct measurement of "ready-made" cations in a Ge<sub>2</sub>Sb<sub>3.4</sub>Te<sub>6.2</sub> film.
- Published in:
- Journal of Materials Science, 2019, v. 54, n. 9, p. 7072, doi. 10.1007/s10853-019-03405-y
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- Publication type:
- Article
14
Amorphous structure melt-quenched from defective GeSbTe.
- Published in:
- Journal of Materials Science, 2012, v. 47, n. 21, p. 7635, doi. 10.1007/s10853-012-6607-8
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- Publication type:
- Article
15
Influence of the Composition on the Thermoelectric and Electro-physical Properties of Ge-Sb-Te Thin Films for Phase Change Memory Application.
- Published in:
- Journal of Nano- & Electronic Physics, 2016, v. 8, n. 3, p. 1, doi. 10.21272/jnep.8(3).03033
- By:
- Publication type:
- Article