Works matching DE "GERMANIUM alloys"

Results: 99

Vacancy-oxygen defects in silicon: the impact of isovalent doping.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 6, p. 2395, doi. 10.1007/s10854-014-1947-6

By:

Londos, C.;
Sgourou, E.;
Hall, D.;
Chroneos, A.

Publication type:

Article

Impact of the germanium concentration in the stability of E-centers and A-centers in SiGe.

Published in:

Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 8, p. 2772, doi. 10.1007/s10854-013-1169-3

By:

Chroneos, A.;
Sgourou, E.;
Londos, C.

Publication type:

Article

Evaluation of the effect of additive group five elements on the properties of Pb-Ca-Sn-Al alloy as the positive grid for lead-acid batteries.

Published in:

Journal of Solid State Electrochemistry, 2019, v. 23, n. 6, p. 1715, doi. 10.1007/s10008-019-04265-x

By:

Yang, Baofeng;
Cai, Xianyu;
Li, Enyu;
Yang, Shaoqiang;
Liu, Wei;
Dai, Changsong;
Yin, Geping

Publication type:

Article

Electrodeposition of Ge, Sn and GeSn from two different room temperature ionic liquids.

Published in:

Journal of Solid State Electrochemistry, 2015, v. 19, n. 3, p. 785, doi. 10.1007/s10008-014-2675-9

By:

Lahiri, Abhishek;
Pulletikurthi, Giridhar;
Abedin, Sherif;
Endres, Frank

Publication type:

Article

The Structural, Electronic, Magnetic, and Optical Properties of Mn2ZrGa1−<italic>x</italic>Ge<italic>x</italic> Heusler Alloys: First-Principles Calculations.

Published in:

Journal of Superconductivity & Novel Magnetism, 2018, v. 31, n. 5, p. 1515, doi. 10.1007/s10948-017-4344-6

By:

Amirabadizadeh, Ahmad;
Emami, Seyyed Amir Abbas;
Nourbakhsh, Zahra;
Sadr, Seyyed Mojtaba Alavi;
Baizaee, Seyyed Madhy

Publication type:

Article

Non-substitutional Sn Defects in GeSn Alloys for Opto- and Nanoelectronics.

Published in:

Journal of Superconductivity & Novel Magnetism, 2013, v. 26, n. 6, p. 2213, doi. 10.1007/s10948-011-1401-4

By:

Barrio, R.;
Querales Flores, J.;
Fuhr, J.;
Ventura, C.

Publication type:

Article

Optical characterization of nanostructured Ge1 − xSnxSe2.5 (x = 0, 0.3, 0.5) films.

Published in:

Optical & Quantum Electronics, 2019, v. 51, n. 1, p. 1, doi. 10.1007/s11082-018-1717-4

By:

Deepika;
Singh, H.;
Saxena, N. S.

Publication type:

Article

Microstructures and thermoelectric properties of GeSbTe based layered compounds.

Published in:

Applied Physics A: Materials Science & Processing, 2007, v. 88, n. 2, p. 425, doi. 10.1007/s00339-007-4006-9

By:

Yan, F.;
Zhu, T. J.;
Zhao, X. B.;
Dong, S. R.

Publication type:

Article

Si[sub x] Ge[sub 1-x] ultrahigh-vacuum chemical vapor deposition on Si(111)(7×7) from GeH[sub 4] /Si[sub 2] H[sub 6] mixtures.

Published in:

Applied Physics A: Materials Science & Processing, 2003, v. 76, n. 5, p. 711, doi. 10.1007/s00339-002-2009-0

By:

Rauscher, H.;
Braun, J.;
Behm, R.J.

Publication type:

Article

Thermomechanical properties of amorphous hydrogenated carbon-germanium alloys.

Published in:

Applied Physics A: Materials Science & Processing, 2000, v. 71, n. 6, p. 633, doi. 10.1007/s003390000573

By:

Marques, F.C.;
Vilcarromero, J.;
Lacerda, R.G.

Publication type:

Article

XPS study of the chemical bonding in hydrogenated amorphous germanium-carbon alloys.

Published in:

Applied Physics A: Materials Science & Processing, 2000, v. 70, n. 5, p. 581, doi. 10.1007/s003390051083

By:

Vilcarromero, J.;
Marques, F.C.

Publication type:

Article

Influence of C on Ge incorporation in the growth of Ge-rich Ge[sub 1-x-y] Si[sub x] C[sub y] alloys on Si (100).

Published in:

Applied Physics A: Materials Science & Processing, 2000, v. 70, n. 4, p. 465, doi. 10.1007/s003390051069

By:

Liu, X.B.;
Zang, L.;
Zhu, S.M.;
Cheng, X.M.;
Han, P.;
Luo, Z.Y.;
Zheng, Y.D.

Publication type:

Article

Effect of electrolyte temperature on the cathodic deposition of Ge nanowires on in and Sn particles in aqueous solutions.

Published in:

Semiconductors, 2017, v. 51, n. 8, p. 1067, doi. 10.1134/S1063782617080115

By:

Gavrilin, I.;
Gromov, D.;
Dronov, A.;
Dubkov, S.;
Volkov, R.;
Trifonov, A.;
Borgardt, N.;
Gavrilov, S.

Publication type:

Article

Formation of donors in germanium-silicon alloys implanted with hydrogen ions with different energies.

Published in:

Semiconductors, 2016, v. 50, n. 8, p. 1122, doi. 10.1134/S1063782616080182

By:

Pokotilo, Yu.;
Petukh, A.;
Litvinov, V.;
Markevich, V.;
Abrosimov, N.;
Kamyshan, A.;
Giro, A.;
Solyanikova, K.

Publication type:

Article

On the thermoelectric properties and band gap of silicon-germanium alloys in the high-temperature region.

Published in:

Semiconductors, 2016, v. 50, n. 4, p. 447, doi. 10.1134/S1063782616040126

By:

Inglizian, P.;
Mikheyev, V.;
Novinkov, V.;
Shchedrov, E.

Publication type:

Article

Influence of bismuth on the optical properties of GeSbTe thin films.

Published in:

Semiconductors, 2014, v. 48, n. 5, p. 577, doi. 10.1134/S1063782614050169

By:

Nguyen, H.;
Kozyukhin, S.;
Pevtsov, A.

Publication type:

Article

Ge-Te-Se and Ge-Te-Se-S alloys as new materials for acousto-optic devices of the near-, mid-, and far-infrared spectral regions.

Published in:

Semiconductors, 2013, v. 47, n. 10, p. 1426, doi. 10.1134/S1063782613100199

By:

Kulakova, L.;
Melekh, B.;
Grudinkin, S.;
Danilov, A.

Publication type:

Article

Manifestation of clustering of Ge atoms in the spectra of electron spin resonance of Si1 − x Ge x alloys (0 < x < 0.057).

Published in:

Semiconductors, 2007, v. 41, n. 6, p. 666, doi. 10.1134/S1063782607060103

By:

Veinger, A.;
Zabrodskiĭ, A.;
Tisnek, T.;
Goloshchapov, S.;
Abrosimov, N.

Publication type:

Article

Structural and electrical properties of the Ge x Si1− x /Si heterojunctions obtained by the method of direct bonding.

Published in:

Semiconductors, 2007, v. 41, n. 6, p. 679, doi. 10.1134/S1063782607060127

By:

Argunova, T.;
Belyakova, E.;
Grekhov, I.;
Zabrodskiĭ, A.;
Kostina, L.;
Sorokin, L.;
Shmidt, N.;
Yi, J.;
Jung, J.;
Je, J.;
Abrosimov, N.

Publication type:

Article

Molecular-Dynamics Simulation of Structural Properties of Ge[sub 1 – ][sub x]Sn[sub x] Substitutional Solid Solutions.

Published in:

Semiconductors, 2001, v. 35, n. 3, p. 283, doi. 10.1134/1.1356147

By:

Deıbuk, V. G.;
Korolyuk, Yu. G.

Publication type:

Article

Alloy Stability of Ge1−xSnx with Sn Concentrations up to 17% Utilizing Low-Temperature Molecular Beam Epitaxy.

Published in:

Journal of Electronic Materials, 2020, v. 49, n. 9, p. 5154, doi. 10.1007/s11664-020-08188-6

By:

Schwarz, Daniel;
Funk, Hannes S.;
Oehme, Michael;
Schulze, Jörg

Publication type:

Article

GePb Alloy Growth Using Layer Inversion Method.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 7, p. 3733, doi. 10.1007/s11664-018-6233-6

By:

Alahmad, Hakimah;
Mosleh, Aboozar;
Alher, Murtadha;
Banihashemian, Seyedeh Fahimeh;
Ghetmiri, Seyed Amir;
Al-Kabi, Sattar;
Du, Wei;
Li, Bauhoa;
Yu, Shui-Qing;
Naseem, Hameed A.

Publication type:

Article

Structural Characterization and Compositional Dependence of Optical Properties of GeSeTeSb ( x = 0, 2, 4, 6, 8) Glassy Alloys.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 12, p. 4747, doi. 10.1007/s11664-015-4035-7

By:

Kaistha, Arpit;
Modgil, Vivek;
Rangra, V.S.

Publication type:

Article

Material Characterization of GeSn Alloys Grown by a Commercial CVD System for Optoelectronic Device Applications.

Published in:

Journal of Electronic Materials, 2014, v. 43, n. 4, p. 938, doi. 10.1007/s11664-014-3089-2

By:

Mosleh, Aboozar;
Ghetmiri, Seyed;
Conley, Benjamin;
Hawkridge, Michael;
Benamara, Mourad;
Nazzal, Amjad;
Tolle, John;
Yu, Shui-Qing;
Naseem, Hameed

Publication type:

Article

Structural Properties of Boron-Doped Germanium-Tin Alloys Grown by Molecular Beam Epitaxy.

Published in:

Journal of Electronic Materials, 2014, v. 43, n. 4, p. 931, doi. 10.1007/s11664-014-3088-3

By:

Bhargava, Nupur;
Gupta, Jay;
Adam, Thomas;
Kolodzey, James

Publication type:

Article

Determination of the thickness and optical constants of amorphous Ge-Se-Bi thin films.

Published in:

Philosophical Magazine, 2009, v. 89, n. 12, p. 1005, doi. 10.1080/14786430902835644

By:

Dahshan, A.;
Aly, K. A.

Publication type:

Article

Microstructural evolution and metastable phase formation in laser ablation-deposited films of Fe-rich Fe–Ge intermetallic compounds.

Published in:

Philosophical Magazine, 2007, v. 87, n. 2, p. 307, doi. 10.1080/14786430600972632

By:

Biswas, K.;
Kumar Das, P.;
Chattopadhyay, K.

Publication type:

Article

Microstructural analysis of germanium modified tin‐copper brazing filler metals for transient liquid phase bonding of aluminium.

Published in:

Materialwissenschaft und Werkstoffechnik, 2017, v. 48, n. 12, p. 1257, doi. 10.1002/mawe.201700155

By:

Iskandar, R.;
Schwedt, A.;
Mayer, J.;
Rochala, P.;
Wiesner, S.;
Öte, M.;
Bobzin, K.;
Weirich, T. E.

Publication type:

Article

Competing Crystal Growth in Ge-Sb Phase-Change Films.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 12, p. 1687, doi. 10.1002/adfm.201301242

By:

Eising, Gert;
Niebuur, Bart‐Jan;
Pauza, Andrew;
Kooi, Bart J.

Publication type:

Article

Structural ordering in glass forming tellurium-germanium melts.

Published in:

Journal of Structural Chemistry, 2007, v. 48, n. 5, p. 868, doi. 10.1007/s10947-007-0129-2

By:

Durachenko, A.;
Malinochka, E.

Publication type:

Article

Finite Cylinders of Si1 - xGex Alloy Under the Double-Punch Test and Effect on Three Valence-Bands.

Published in:

Mechanics of Advanced Materials & Structures, 2009, v. 16, n. 5, p. 371, doi. 10.1080/15376490802666328

By:

Wei, X.X.

Publication type:

Article

Effect of germanium alloying on microstructure and properties of Ti-6Al-4V alloy fabricated by additive manufacturing.

Published in:

Applied Physics A: Materials Science & Processing, 2023, v. 129, n. 5, p. 1, doi. 10.1007/s00339-023-06638-6

By:

Li, Changfu;
Bu, Jiaqi;
Wang, Xiangming;
Yang, Guang

Publication type:

Article

Thermal and optical characterization of Ge-Sn-Se glass system.

Published in:

Applied Physics A: Materials Science & Processing, 2015, v. 118, n. 4, p. 1551, doi. 10.1007/s00339-014-8940-z

By:

Sharma, Surbhi;
Kumar, Rajesh;
Sareen, Amit;
Sharma, Navjeet

Publication type:

Article

First-principles investigations on thermodynamic properties of the ordered and disordered SiGe alloys.

Published in:

Applied Physics A: Materials Science & Processing, 2014, v. 115, n. 2, p. 667, doi. 10.1007/s00339-013-7847-4

By:

Zhu, Yan;
Zhang, Xinyu;
Zhang, Suhong;
Sun, Xiaowei;
Wang, Limin;
Ma, Mingzhen;
Liu, Riping

Publication type:

Article

A lithography-independent and fully confined fabrication process of phase-change materials in metal electrode nanogap with 16-μA threshold current and 80-mV SET voltage.

Published in:

Applied Physics A: Materials Science & Processing, 2013, v. 110, n. 1, p. 173, doi. 10.1007/s00339-012-7083-3

By:

Fu, Yingchun;
Wang, Xiaofeng;
Zhang, Jiayong;
Wang, Xiaodong;
Chang, Chun;
Ma, Huili;
Cheng, Kaifang;
Chen, Xiaogang;
Song, Zhitang;
Feng, Songlin;
Ji, An;
Yang, Fuhua

Publication type:

Article

Biologic Evaluation of a Silver-Copper-Germanium Dental Casting Alloy and a Gold-Germanium Coating Alloy.

Published in:

Journal of Dental Research, 1983, v. 62, n. 8, p. 899, doi. 10.1177/00220345830620081001

By:

TOWNSEND, J. D.;
HAMILTON, A. I.;
SBORDONE, L.

Publication type:

Article

Study of GeSn/SiGeSn RCE photodetectors based on Franz-Keldysh effect and quantum confined Stark effect.

Published in:

Optical & Quantum Electronics, 2015, v. 47, n. 8, p. 2381, doi. 10.1007/s11082-014-9998-8

By:

Chakraborty, Vedatrayee;
Mukhopadhyay, Bratati;
Basu, P.

Publication type:

Article

Thermodynamic properties of alloys of the Ge-Mn system. Review.

Published in:

Metal Science & Heat Treatment, 2006, v. 48, n. 9/10, p. 459, doi. 10.1007/s11041-006-0117-8

By:

Kanibolotskii, D.;
Lesnyak, V.

Publication type:

Article

On energy levels and heat generation of electron-hole pairs in Ge alloyed with CuInSe and AlTe.

Published in:

Applied Solar Energy (19349424), 2010, v. 46, n. 3, p. 206, doi. 10.3103/S0003701X10030102

By:

Saidov, M.

Publication type:

Article

电磁熔配制备p型硅错合金热电半导体材料.

Published in:

Nonferrous Metals Engineering, 2022, v. 12, n. 12, p. 22, doi. 10.3969/j·issn.2095-1744.2022.12.004

By:

华俊森;
吕国强;
马文会;
魏奎先;
李绍元;
雷云

Publication type:

Article

Melting and homogeneity in germanium–silicon alloys and a modified micro-manufactured assembly for stable high pressure and temperature measurements.

Published in:

High Pressure Research, 2014, v. 34, n. 2, p. 176, doi. 10.1080/08957959.2013.856896

By:

Serghiou, G.;
Odling, N.;
Hunter, R.;
Abbie, A.;
Armstrong, B.;
Lathe, C.

Publication type:

Article

Enhancement in Thermoelectric Properties of Cubic Ge2Sb2Te5 Thin Films by Introducing Structural Disorder.

Published in:

Energy Technology, 2016, v. 4, n. 3, p. 375, doi. 10.1002/ente.201500296

By:

Kumar, Manish;
Vora‐ud, Athorn;
Seetawan, Tosawat;
Han, Jeon Geon

Publication type:

Article

Crystallization and Electrical Properties of Ge-Rich GeSbTe Alloys.

Published in:

Nanomaterials (2079-4991), 2022, v. 12, n. 4, p. 631, doi. 10.3390/nano12040631

By:

Cecchi, Stefano;
Lopez Garcia, Iñaki;
Mio, Antonio M.;
Zallo, Eugenio;
Abou El Kheir, Omar;
Calarco, Raffaella;
Bernasconi, Marco;
Nicotra, Giuseppe;
Privitera, Stefania M. S.

Publication type:

Article

TID AND NIEL ASSESSMENT IN ALPHA IRRADIATED PHASE CHANGE MEMORY CELLS BASED ON SIMULATIONS.

Published in:

Journal of Ovonic Research, 2015, v. 11, n. 4, p. 175

By:

ZDJELAREVIĆ, N. S.;
VUJISIĆ, M. Lj.

Publication type:

Article

Optoelectronics: The rise of the GeSn laser.

Published in:

Nature Photonics, 2015, v. 9, n. 2, p. 78, doi. 10.1038/nphoton.2015.1

By:

Homewood, Kevin P.;
Lourenço, Manon A.

Publication type:

Article

Bauschinger Effect and Back Stress in Gradient Cu-Ge Alloy.

Published in:

Metallurgical & Materials Transactions. Part A, 2017, v. 48, n. 9, p. 3943, doi. 10.1007/s11661-017-4176-9

By:

Hu, Xianzhi;
Jin, Shenbao;
Zhou, Hao;
Yin, Zhe;
Yang, Jian;
Gong, Yulan;
Zhu, Yuntian;
Sha, Gang;
Zhu, Xinkun

Publication type:

Article

Twisted GeS Nanowire with Engineered Stacking Order and Tunable Composition.

Published in:

Advanced Materials Interfaces, 2025, v. 12, n. 9, p. 1, doi. 10.1002/admi.202400802

By:

Wu, Qi;
Pan, Xuan;
Zhao, Weiwei;
Gao, Yuan;
Zhao, Dawei;
Yan, Shancheng;
Li, Taotao;
Miao, Feng;
Fei, Zaiyao;
Shi, Yi

Publication type:

Article

Gas Source Techniques for Molecular Beam Epitaxy of Highly Mismatched Ge Alloys.

Published in:

Crystals (2073-4352), 2016, v. 6, n. 12, p. 159, doi. 10.3390/cryst6120159

By:

Stephenson, Chad A.;
Gillett-Kunnath, Miriam;
O'Brien, William A.;
Kudrawiec, Robert;
Wistey, Mark A.

Publication type:

Article

Calorimetric study of Sb-modified Ge-Se-Te glassy alloys.

Published in:

Journal of Thermal Analysis & Calorimetry, 2017, v. 129, n. 3, p. 1323, doi. 10.1007/s10973-017-6397-y

By:

Kaistha, Arpit;
Modgil, Vivek;
Rangra, V.

Publication type:

Article

Thermal analysis of quaternary Ge- Se- Sb- Te chalcogenide alloys.

Published in:

Journal of Thermal Analysis & Calorimetry, 2015, v. 119, n. 1, p. 213, doi. 10.1007/s10973-014-4138-z

By:

Sharma, Neha;
Sharda, Sunanda;
Sharma, Vineet;
Sharma, Pankaj

Publication type:

Article