Works matching DE "GERMANIUM"

Results: 2366

Study the Structure, Optical, and Electrochemical Properties of Germanium Oxide/Graphene Nanoplatelet Composite for Energy Storage Applications.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2025, v. 222, n. 13, p. 1, doi. 10.1002/pssa.202500071

By:

Alahmadi, M.;
Kebede, Mesfin A.;
Hassan, Moukhtar A.;
Gamal, Rania;
Hanafy, Taha. A.;
Hameed, Talaat A.;
Yahia, Ibrahim S.;
Gao, Hongcai;
Sheha, Eslam

Publication type:

Article

Versatile X‐ray reflector extension setup for grazing‐incidence experiments at SAXS facilities for liquid surface study.

Published in:

Journal of Synchrotron Radiation, 2025, v. 32, n. 4, p. 961, doi. 10.1107/S1600577525003431

By:

Chumakov, Andrei;
Rubeck, Jan J.;
Schwartzkopf, Matthias

Publication type:

Article

High speed operation efficiency of doped light sources with the silica-doped fiber channel for extended optical fiber system reach.

Published in:

Journal of Optical Communications, 2025, v. 46, n. 3, p. 645, doi. 10.1515/joc-2024-0130

By:

Gopalan, Anitha;
Thillaigovindan, Annalakshmi;
Patnala, Pattabhirama Mohan;
Lesley, Hubert Mary;
Sundaram, Murugeswari;
Srinivasan, Vimala;
Anwer, Karem Tarek

Publication type:

Article

Symplastic and apoplastic pathways for local distribution of silicon in rice leaves.

Published in:

New Phytologist, 2025, v. 247, n. 3, p. 1280, doi. 10.1111/nph.70110

By:

Huang, Sheng;
Yamaji, Naoki;
Konishi, Noriyuki;
Mitani‐Ueno, Namiki;
Ma, Jian Feng

Publication type:

Article

Baseband control of single-electron silicon spin qubits in two dimensions.

Published in:

Nature Communications, 2025, v. 16, n. 1, p. 1, doi. 10.1038/s41467-025-60351-x

By:

Unseld, Florian K.;
Undseth, Brennan;
Raymenants, Eline;
Matsumoto, Yuta;
de Snoo, Sander L.;
Karwal, Saurabh;
Pietx-Casas, Oriol;
Ivlev, Alexander S.;
Meyer, Marcel;
Sammak, Amir;
Veldhorst, Menno;
Scappucci, Giordano;
Vandersypen, Lieven M. K.

Publication type:

Article

Optical Properties of Germanium Nanoparticles Prepared by Laser Ablation.

Published in:

University of Thi-Qar Journal of Science, 2023, v. 10, n. 2, p. 137, doi. 10.32792/utq/utjsci/v10i2.1119

By:

Naser, Shahad Riyadh;
Mohammad, Mohammed Salman;
Naser, Noorulhuda Riyadh

Publication type:

Article

ФРАКТАЛЬНИЙ ПІДХІД ДО ГЕОЛОГО-ЕКОНОМІЧНОЇ ОЦІНКИ ГЕРМАНІЙВМІСНИХ ЛІГНІТІВ.

Published in:

Mineral Resources of Ukraine / Mìneral'nì Resursi Ukraïni, 2025, n. 2, p. 6, doi. 10.31996/mru.2025.2.6-14

By:

БІЛОУС, О. І.;
БУРЛУЦЬКИЙ, М. С.

Publication type:

Article

A SILICON GERMANIUM GRADED JUNCTIONLESS TRANSISTOR WITH LOW OFF CURRENT.

Published in:

International Journal of Nanoscience, 2013, v. 12, n. 6, p. -1, doi. 10.1142/S0219581X13500439

By:

SURANA, NEELAM;
GHOSH, BAHNIMAN;
TRIPATHY, BALL MUKUND MANI;
SALIMATH, AKSHAY KUMAR

Publication type:

Article

PULSED LASER ANNEALING OF ULTRA-SHALLOW JUNCTIONS IN SILICON-GERMANIUM.

Published in:

International Journal of Nanoscience, 2010, v. 9, n. 4, p. 341, doi. 10.1142/S0219581X10006922

By:

TAN, L. S.;
TAN, J. Y.;
BEGUM, A.;
HONG, M. H.;
DU, A. Y.;
BHAT, M.;
WANG, X. C.

Publication type:

Article

SYNTHESIS OF TUBULAR Ge NANOSTRUCTURES.

Published in:

International Journal of Nanoscience, 2010, v. 9, n. 1/2, p. 75, doi. 10.1142/S0219581X10006533

By:

PEI, L. Z.;
ZHAO, H. S.;
YU, H. Y.;
HU, J. L.

Publication type:

Article

LOCAL ELECTRONIC STATES ON TWO-DIMENSIONAL NANOSCALE ISLAND OF Si AND Ge FABRICATED ON Si(111) 7 × 7 SUBSTRATE.

Published in:

International Journal of Nanoscience, 2009, v. 8, n. 6, p. 595, doi. 10.1142/S0219581X09006444

By:

SHIGETA, YUKICHI;
NEGISHI, RYOTA;
SUZUKI, MASAHIKO

Publication type:

Article

FORMATION OF Y- AND T-JUNCTION Ge NANOWIRES BY VAPOR–LIQUID–SOLID MECHANISM.

Published in:

International Journal of Nanoscience, 2007, v. 6, n. 6, p. 467, doi. 10.1142/S0219581X0700505X

By:

DAS, K.;
CHAKRABORTY, A. K.;
GOSWAMI, M. L. N.;
SINGHA, R. K.;
DHAR, A.;
COLEMAN, K. S.;
RAY, S. K.

Publication type:

Article

SPACE-CHARGE SPECTROSCOPY OF ELECTRONIC STATES IN Ge/Si QUANTUM DOTS WITH TYPE-II BAND ALIGNMENT.

Published in:

International Journal of Nanoscience, 2007, v. 6, n. 5, p. 353, doi. 10.1142/S0219581X07004511

By:

YAKIMOV, A. I.;
DVURECHENSKII, A. V.;
NIKIFOROV, A. I.;
BLOSHKIN, A. A.

Publication type:

Article

OPTICAL AND STRUCTURAL ANALYSIS OF Ge/Si QUANTUM DOTS GROWN ON A Si(001) SURFACE COVERED WITH A SiO2 SUB-MONOLAYER.

Published in:

International Journal of Nanoscience, 2007, v. 6, n. 3/4, p. 245, doi. 10.1142/S0219581X07004778

By:

FONSECA, A.;
ALVES, E.;
LEITÃO, J. P.;
SOBOLEV, N. A.;
CARMO, M. C.;
NIKIFOROV, A.

Publication type:

Article

TERAHERTZ EMITTERS AND DETECTORS BASED ON SiGe NANOSTRUCTURES.

Published in:

International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 171, doi. 10.1142/S0219581X0400195X

By:

Kolodzey, J.;
Adam, T. N.;
Troeger, R. T.;
LV, P.-C.;
Ray, S. K.;
Yassievich, I.;
Odnoblyudov, M.;
Kagan, M.

Publication type:

Article

Nanostructuring Germanium Nanowires by In Situ TEM Ion Irradiation.

Published in:

Particle & Particle Systems Characterization, 2021, v. 38, n. 12, p. 1, doi. 10.1002/ppsc.202100154

By:

Camara, Osmane;
Mir, Anamul H.;
Dzieciol, Krzysztof;
Greaves, Graeme;
Basak, Shibabrata;
Kungl, Hans;
Bosi, Matteo;
Seravalli, Luca;
Donnelly, Steve E.;
Eichel, Rüdiger A.;
Hinks, Jonathan A.

Publication type:

Article

Structural Strategies for Germanium‐Based Anode Materials to Enhance Lithium Storage.

Published in:

Particle & Particle Systems Characterization, 2019, v. 36, n. 9, p. N.PAG, doi. 10.1002/ppsc.201900248

By:

Hao, Jian;
Wang, Yanxia;
Guo, Qingjie;
Zhao, Jiupeng;
Li, Yao

Publication type:

Article

Ge Nanoparticles Encapsulated in Interconnected Hollow Carbon Boxes as Anodes for Sodium Ion and Lithium Ion Batteries with Enhanced Electrochemical Performance.

Published in:

Particle & Particle Systems Characterization, 2017, v. 34, n. 3, p. n/a, doi. 10.1002/ppsc.201600115

By:

Li, Qun;
Zhang, Zhiwei;
Dong, Shihua;
Li, Caixia;
Ge, Xiaoli;
Li, Zhaoqiang;
Ma, Jingyun;
Yin, Longwei

Publication type:

Article

Fitting formula for the injection volume of a gas chromatograph for radio-xenon sampling in the lower troposphere.

Published in:

Journal of Separation Science, 2014, v. 37, n. 12, p. 1456, doi. 10.1002/jssc.201301255

By:

Shu‐jiang, Liu;
Zhan‐ying, Chen;
Shi‐lian, Wang;
Yin‐zhong, Chang;
Qi, Li;
Yuan‐qing, Fan;
Yun‐gang, Zhao;
Huai‐mao, Jia;
Xin‐jun, Zhang;
Jun, Wang

Publication type:

Article

In Situ Transmission Electron Microscopy Observation of Melted Germanium Encapsulated in Multilayer Graphene.

Published in:

Annalen der Physik, 2023, v. 535, n. 9, p. 1, doi. 10.1002/andp.202300122

By:

Suzuki, Seiya;
Nemoto, Yoshihiro;
Shiiki, Natsumi;
Nakayama, Yoshiko;
Takeguchi, Masaki

Publication type:

Article

Broadband Plasmon‐Induced Transparency to a Electromagnetically Induced Absorption Conversion Metastructure Based on Germanium.

Published in:

Annalen der Physik, 2023, v. 535, n. 1, p. 1, doi. 10.1002/andp.202200425

By:

Zhu, Di‐Di;
Lv, You;
Li, Si‐Ying;
Zhang, Hai‐Feng

Publication type:

Article

Core-Shell Ge@Graphene@TiO2 Nanofibers as a High-Capacity and Cycle-Stable Anode for Lithium and Sodium Ion Battery.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 7, p. 1104, doi. 10.1002/adfm.201504589

By:

Wang, Xiaoyan;
Fan, Ling;
Gong, Decai;
Zhu, Jian;
Zhang, Qingfeng;
Lu, Bingan

Publication type:

Article

Fluorinated Graphene in Interface Engineering of Ge-Based Nanoelectronics.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 12, p. 1805, doi. 10.1002/adfm.201404031

By:

Zheng, Xiaohu;
Zhang, Miao;
Shi, Xiaohua;
Wang, Gang;
Zheng, Li;
Yu, Yuehui;
Huang, Anping;
Chu, Paul K.;
Gao, Heng;
Ren, Wei;
Di, Zengfeng;
Wang, Xi

Publication type:

Article

Thermodynamic properties of germanium and lead tellurites.

Published in:

Journal of Thermal Analysis & Calorimetry, 2007, v. 87, n. 2, p. 557, doi. 10.1007/s10973-006-7740-x

By:

Gospodinov, G.;
Atanasova, L.

Publication type:

Article

Raman scattering characterization of Ge-composition in bulk Si1− x Ge x with compositional variation.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 294, doi. 10.1007/s10854-007-9514-z

By:

Islam, M. R.;
Yamada, M.

Publication type:

Article

On the characterisation of grown-in defects in Czochralski-grown Si and Ge.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 24, doi. 10.1007/s10854-008-9579-3

By:

Vanhellemont, J.;
Steenbergen, J. Van;
Holsteyns, F.;
Roussel, P.;
Meuris, M.;
Młynarczyk, K.;
Śpiewak, P.;
Geens, W.;
Romandic, I..

Publication type:

Article

Modeling silicon–germanium interdiffusion by the vacancy exchange and interstitial mechanisms.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 6, p. 569, doi. 10.1007/s10854-007-9391-5

By:

Hasanuzzaman, Mohammad;
Haddara, Yaser M.

Publication type:

Article

Optical property and crystalline quarity of Si and Ge added β-Ga2O3 thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 167, doi. 10.1007/s10854-007-9329-y

By:

Takakura, K.;
Kudou, T.;
Hayama, K.;
Shigaki, K.;
Ohyama, H.;
Kayamoto, K.;
Shibuya, M.

Publication type:

Article

Si/SiGe near-infrared photodetectors grown using low pressure chemical vapour deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 179, doi. 10.1007/s10854-007-9299-0

By:

Iamraksa, P.;
Lloyd, N. S.;
Bagnall, D. M.

Publication type:

Article

Atomic layer deposition of hafnium oxide dielectrics on silicon and germanium substrates.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 119, doi. 10.1007/s10854-007-9337-y

By:

McNeill, D. W.;
Bhattacharya, S.;
Wadsworth, H.;
Ruddell, F. H.;
Mitchell, S. J. N.;
Armstrong, B. M.;
Gamble, H. S.

Publication type:

Article

UV Raman spectroscopy of group IV nanocrystals embedded in a SiO2 matrix.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 155, doi. 10.1007/s10854-007-9304-7

By:

Prieto, A. C.;
Torres, A.;
Jiménez, J.;
Rodríguez, A.;
Sangrador, J.;
Rodríguez, T.

Publication type:

Article

Transmission study of germanium using free-electron laser.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, p. 81, doi. 10.1007/s10854-007-9165-0

By:

Furuse, H.;
Mori, N.;
Kubo, H.;
Momose, H.;
Kondow, M.

Publication type:

Article

Ab initio investigation of boron diffusion paths in germanium.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 775, doi. 10.1007/s10854-006-9071-x

By:

Janke, C.;
Jones, R.;
Öberg, S.;
Briddon, P.

Publication type:

Article

Early stage donor-vacancy clusters in germanium.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 769, doi. 10.1007/s10854-006-9069-4

By:

Coutinho, José;
Torres, Vitor;
Öberg, Sven;
Carvalho, Alexandra;
Janke, Colin;
Jones, Robert;
Briddon, Patrick

Publication type:

Article

Oxygen defects in irradiated germanium.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 781, doi. 10.1007/s10854-006-9083-6

By:

Carvalho, A.;
Jones, R.;
Torres, V.;
Coutinho, J.;
Markevich, V.;
Öberg, S.;
Briddon, P.

Publication type:

Article

Infrared absorption and slow positron investigation of hydrogen plasma induced platelets in crystalline germanium.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 793, doi. 10.1007/s10854-006-9096-1

By:

Lauwaert, J.;
Baerdemaeker, J.;
Dauwe, C.;
Clauws, P.

Publication type:

Article

Germanium content dependence of the leakage current of recessed SiGe source/drain junctions.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 787, doi. 10.1007/s10854-006-9102-7

By:

Simoen, Eddy;
Bargallo Gonzalez, Mireia;
Eneman, Geert;
Verheyen, Peter;
Benedetti, Aldo;
Bender, Hugo;
Loo, Roger;
Claeys, Cor

Publication type:

Article

Lifetime and leakage current considerations in metal-doped germanium.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 799, doi. 10.1007/s10854-006-9110-7

By:

Simoen, E.;
Claeys, C.;
Sioncke, S.;
Steenbergen, J.;
Meuris, M.;
Forment, S.;
Vanhellemont, J.;
Clauws, P.;
Theuwis, A.

Publication type:

Article

Atomic scale simulations of donor–vacancy pairs in germanium.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 763, doi. 10.1007/s10854-006-9073-8

By:

Chroneos, A.;
Grimes, R.;
Tsamis, C.

Publication type:

Article

Iron-aluminium pair reconfiguration processes in SiGe alloys.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 759, doi. 10.1007/s10854-006-9104-5

By:

Kruszewski, P.;
Mesli, A.;
Dobaczewski, L.;
Abrosimov, N.;
Markevich, V.;
Peaker, A.

Publication type:

Article

High boron incorporation in selective epitaxial growth of SiGe layers.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 747, doi. 10.1007/s10854-007-9121-z

By:

Ghandi, R.;
Kolahdouz, M.;
Hållstedt, J.;
Lu, Jun;
Wise, R.;
Wejtmans, H.;
Östling, M.;
Radamson, H.

Publication type:

Article

Improvement of Ge/Pd/GaAs ohmic contact by In layer.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 6, p. 621, doi. 10.1007/s10854-007-9122-y

By:

Macháč, Petr;
Sajdl, Petr;
Machovič, Vladimír

Publication type:

Article

Germanium enhanced large-grain growth by pulse mode rapid thermal crystallization process.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 5, p. 475, doi. 10.1007/s10854-006-9066-7

By:

Chiung-Wei Lin;
Pao-An Chang;
Yeong-Shyang Lee

Publication type:

Article

H2S synthesis route for high purity low temperature 3-D α-GeS2.

Published in:

Journal of Materials Science Letters, 2003, v. 22, n. 21, p. 1467, doi. 10.1023/A:1026174310568

By:

Sutherland, J. T.;
Poling, S. A.;
Nelson, C. R.;
Martin, S. W.

Publication type:

Article

In praise of triads.

Published in:

Foundations of Chemistry, 2022, v. 24, n. 2, p. 285, doi. 10.1007/s10698-022-09434-x

By:

Scerri, Eric R.

Publication type:

Article

Challenges of Electron Correlation Microscopy on Amorphous Silicon and Amorphous Germanium.

Published in:

Microscopy & Microanalysis, 2023, v. 29, n. 5, p. 1579, doi. 10.1093/micmic/ozad090

By:

Radić, Dražen;
Peterlechner, Martin;
Spangenberg, Katharina;
Posselt, Matthias;
Bracht, Hartmut

Publication type:

Article

The Impact of Energy Filtering on Fluctuation Electron Microscopy.

Published in:

Microscopy & Microanalysis, 2023, v. 29, n. 1, p. 189, doi. 10.1093/micmic/ozac020

By:

Radić, Dražen;
Peterlechner, Martin;
Posselt, Matthias;
Bracht, Hartmut

Publication type:

Article

Surface Potential Imaging of Germanium/Monolayer MoS2 Heterostructures.

Published in:

Microscopy & Microanalysis, 2019, p. 1602, doi. 10.1017/S1431927618008498

By:

Yoon, Yohan;
Yoo, Jinkyoung;
Magginetti, David;
Cheng, Xueling;
Yoon, Heayoung

Publication type:

Article

In-situ SEM observation of ⟨110⟩ oriented Ge nanowire growth.

Published in:

2012

By:

Vystavel, T.;
Novák, L.;
Wandrol, P.;
Kolíbal, M.;
Mach, J.;
Šikola, T.

Publication type:

Abstract

In-situ Observations of the Complex Crystallization Processes Occurring Laser Heated Amorphous Germanium Films.

Published in:

2011

By:

LaGrange, T;
Nikolova, L;
Wall, M;
Reed, B;
Campbell, G;
Siwick, B;
Rosei, F

Publication type:

Abstract