Works about GAS flow


Results: 5000
    1

    MOCVD 载气流量对GaN 外延生长的影响.

    Published in:
    Journal of Synthetic Crystals, 2025, v. 54, n. 6, p. 979, doi. 10.16553/j.cnki.issn1000-985x.2025.0013
    By:
    • 李亚洲;
    • 马占红;
    • 姚威振;
    • 杨少延;
    • 刘祥林;
    • 李成明;
    • 王占国
    Publication type:
    Article
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