Works matching DE "GALVANOMAGNETIC effects"
1
- International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 123, doi. 10.1142/S0219581X04001894
- Novoselov, Kostya S.;
- Morozov, Sergey V.;
- Dubonos, Sergey V.;
- Missous, M.;
- Geim, A. K.
- Article
2
- International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 149, doi. 10.1142/S0219581X04001924
- Matveev, V. N.;
- Berezin, V. A.;
- Volkov, V. T.;
- Firsov, A. A.;
- Kononenko, O. V.;
- Levashov, V. I.
- Article
3
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 793, doi. 10.1007/s10854-007-9417-z
- Lebedev, Alexander Alexandrovich;
- Abramov, P. L.;
- Agrinskaya, N. V.;
- Kozub, V. I.;
- Kuznetsov, A. N.;
- Lebedev, S. P.;
- Oganesyan, G. A.;
- Sorokin, L. M.;
- Chernyaev, A. V.;
- Shamshur, D. V.
- Article
4
- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 12, p. 1203, doi. 10.1007/s10854-007-9314-5
- Saq'an, S.;
- Zihlif, A. M.;
- Al-Ani, R. S.;
- Ragosta, G.
- Article
5
- Journal of Materials Science Letters, 2003, v. 22, n. 4, p. 249, doi. 10.1023/A:1022347910122
- Jingyun Huang;
- Zhizhen Ye;
- Hanhong Chen;
- Binghui Zhao;
- Lei Wang
- Article
6
- Russian Journal of Nondestructive Testing, 2003, v. 39, n. 8, p. 629, doi. 10.1023/B:RUNT.0000016389.44821.a1
- Matyuk, V. F.;
- Churilo, V. R.;
- Strelyukhin, A. V.
- Article
7
- Marine Biology, 2005, v. 147, n. 5, p. 1165, doi. 10.1007/s00227-005-0021-6
- Wilson, Rory;
- Reuter, Penpag;
- Wahl, Martin
- Article
8
- Scientific Reports, 2014, p. 1, doi. 10.1038/srep04844
- Zhang, H. J.;
- Yamamoto, S.;
- Fukaya, Y.;
- Maekawa, M.;
- Li, H.;
- Kawasuso, A.;
- Seki, T.;
- Saitoh, E.;
- Takanashi, K.
- Article
9
- Scientific Reports, 2014, p. 1, doi. 10.1038/srep04838
- Fengxia Zu;
- Zuli Liu;
- Kailun Yao;
- Guoying Gao;
- Huahua Fu;
- Sicong Zhu;
- Yun Ni;
- Li Peng
- Article
10
- Scientific Reports, 2013, p. 1, doi. 10.1038/srep02181
- Wenhong Wang;
- Yin Du;
- Guizhou Xu;
- Xiaoming Zhang;
- Enke Liu;
- Zhongyuan Liu;
- Youguo Shi;
- Jinglan Chen;
- Guangheng Wu;
- Zhang, Xi-xiang
- Article
11
- Izvestiya, Physics of the Solid Earth, 2011, v. 47, n. 12, p. 1106, doi. 10.1134/S1069351311120044
- Gurarii, G.;
- Pechersky, D.
- Article
12
- Semiconductors, 2001, v. 35, n. 9, p. 992, doi. 10.1134/1.1403562
- Varavin, V. S.;
- Kravchenko, A. F.;
- Sidorov, Yu. G.
- Article
13
- Semiconductors, 1997, v. 31, n. 10, p. 1030, doi. 10.1134/1.1187019
- Lerinman, N. K.;
- Mar’yanchuk, P. D.;
- Ponomarev, A. I.;
- Sabirzyanova, L. D.;
- Shelushinina, N. G.
- Article
14
- Semiconductors, 1997, v. 31, n. 8, p. 763, doi. 10.1134/1.1187244
- Voronina, T. I.;
- Lagunova, T. S.;
- Mikhaılova, M. P.;
- Moiseev, K. D.;
- Sipovskaya, M. A.;
- Yakovlev, Yu. P.
- Article
15
- Semiconductors, 1997, v. 31, n. 3, p. 268, doi. 10.1134/1.1187124
- Bashirov, R. I.;
- Bashirov, R. R.;
- Elizarov, V. A.;
- Mollaev, A. Yu.
- Article
16
- Journal of Materials Science, 2008, v. 43, n. 12, p. 4226, doi. 10.1007/s10853-008-2611-4
- Chen, Peng;
- Chen, Ke;
- Wu, Guang;
- Zhang, Xi
- Article
17
- Nature, 2005, v. 438, n. 7065, p. 201, doi. 10.1038/nature04235
- Yuanbo Zhang;
- Yan-Wen Tan;
- Stormer, Horst L.;
- Kim, Philip
- Article
18
- Materials Science, 2006, v. 42, n. 5, p. 634, doi. 10.1007/s11003-006-0127-0
- Saldan, I.;
- Dubov, Yu.;
- Ryabov, O.;
- Zavalii, I.
- Article
19
- Journal of Electron Microscopy, 2010, v. 59, n. S1, p. S95, doi. 10.1093/jmicro/dfq035
- Yu, Xiuzhen;
- Li, Run-Wei;
- Asaka, Toru;
- Ishizuka, Kazuo;
- Kimoto, Koji;
- Matsui, Yoshio
- Article
20
- Technical Physics Letters, 2018, v. 44, n. 6, p. 487, doi. 10.1134/S1063785018060056
- Grabov, V. M.;
- Komarov, V. A.;
- Demidov, E. V.;
- Suslov, A. V.;
- Suslov, M. V.
- Article
21
- Applied Physics A: Materials Science & Processing, 1996, v. 62, n. 2, p. 169, doi. 10.1007/BF01575715
- Article
22
- Annals of Science, 1991, v. 48, n. 1, p. 21, doi. 10.1080/00033799100200111
- Galdabini, Silvana;
- Giuliani, Giuseppe
- Article
23
- Journal of Electronic Materials, 2016, v. 45, n. 6, p. 2796, doi. 10.1007/s11664-015-4324-1
- Jiang, Ya-Qing;
- Lu, Mao-Wang;
- Huang, Xin-Hong;
- Yang, Shi-Peng;
- Tang, Qiang
- Article
24
- Journal of Electronic Materials, 2016, v. 45, n. 3, p. 1561, doi. 10.1007/s11664-015-4114-9
- Ohorodniichuk, V.;
- Candolfi, C.;
- Masschelein, Ph.;
- Baranek, Ph.;
- Dalicieux, P.;
- Dauscher, A.;
- Lenoir, B.
- Article
25
- Journal of Electronic Materials, 2013, v. 42, n. 7, p. 1796, doi. 10.1007/s11664-012-2432-8
- Lukyanova, L.;
- Boikov, Yu.;
- Danilov, V.;
- Volkov, M.;
- Kutasov, V.
- Article
26
- Journal of Electronic Materials, 2010, v. 39, n. 9, p. 2070, doi. 10.1007/s11664-009-1007-9
- Lukyanova, L. N.;
- Kutasov, V. A.;
- Konstantinov, P. P.;
- Popov, V. V.
- Article
27
- Journal of Electronic Materials, 2004, v. 33, n. 2, p. 114, doi. 10.1007/s11664-004-0279-3
- Moon-Ho Ham, C. P.;
- Min-Chang Jeong, C. P.;
- Woo-Young Lee, C. P.;
- Jae-Min Myoung, C. P.;
- Jeung-Mi Lee, C. P.;
- Joon-Yeon Chang;
- Suk-Hee Han, C. P.
- Article
28
- Materials Science & Technology, 2003, v. 19, n. 4, p. 539, doi. 10.1179/026708303225009715
- Gandotra, V. K.;
- Padmavati, M. V. G.;
- Singh, A.;
- Vedeshwar, A. G.
- Article
29
- Doklady Physics, 2005, v. 50, n. 1, p. 25, doi. 10.1134/1.1862368
- Ivanovskiî, A. V.;
- Shaîdullin, V. Sh.
- Article
30
- Crystallography Reports, 2007, v. 52, n. 6, p. 996, doi. 10.1134/S1063774507060119
- Prekul, A. F.;
- Shchegolikhina, N. I.
- Article
31
- Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 898, doi. 10.1002/pssr.201308004
- Heiderich, Sonja;
- Toellner, William;
- Boehnert, Tim;
- Gluschke, Jan Goeran;
- Zastrow, Sebastian;
- Schumacher, Christian;
- Pippel, Eckhard;
- Nielsch, Kornelius
- Article
32
- Journal of Engineering Science & Technology Review, 2009, v. 2, n. 1, p. 1
- Petousis, Vlassis N.;
- Dimitropoulos, Panagiotis D.
- Article
33
- Electronic Journal of Theoretical Physics, 2009, v. 6, n. 21, p. 157
- Sadeghi, J.;
- Pourhassan, B.
- Article
34
- Journal of Engineering Physics & Thermophysics, 2003, v. 76, n. 2, p. 432, doi. 10.1023/A:1023686108836
- Article
35
- Inorganic Materials, 2010, v. 46, n. 9, p. 948, doi. 10.1134/S0020168510090050
- Rogozin, I.;
- Georgobiani, A.;
- Kotlyarevsky, M.;
- Demin, V.;
- Marakhovskii, A.
- Article
36
- Inorganic Materials, 2010, v. 46, n. 6, p. 571, doi. 10.1134/S0020168510060014
- Mollaev, A. Yu.;
- Kamilov, I. K.;
- Arslanov, R. K.;
- Zalibekov, U. Z.;
- Arslanov, T. R.;
- Ibaev, E. S.;
- Novotortsev, V. M.;
- Marenkin, S. F.
- Article
37
- Applied Physics A: Materials Science & Processing, 2010, v. 101, n. 4, p. 685, doi. 10.1007/s00339-010-5973-9
- Yoshida, T.;
- Tachibana, T.;
- Maemoto, T.;
- Sasa, S.;
- Inoue, M.
- Article
38
- Applied Physics A: Materials Science & Processing, 2007, v. 88, n. 1, p. 201, doi. 10.1007/s00339-007-3982-0
- von Kreutzbruck, M.;
- Lembke, G.;
- Korte, C.;
- Franz, B.
- Article
39
- Applied Physics A: Materials Science & Processing, 2006, v. 83, n. 2, p. 313, doi. 10.1007/s00339-006-3491-6
- Li, J.;
- Wang, P.;
- Peng, W.;
- Xiang, J. Y.;
- Zhu, X. H.;
- Chen, Y. F.;
- Wang, F. B.;
- Zheng, D. N.
- Article
40
- Journal of Low Temperature Physics, 2010, v. 159, n. 1/2, p. 208, doi. 10.1007/s10909-009-0149-8
- Marchenkov, V. V.;
- Okulov, V. I.;
- Okulova, K. A.;
- Weber, H. W.
- Article
41
- Journal of Low Temperature Physics, 2010, v. 159, n. 1/2, p. 249, doi. 10.1007/s10909-009-0099-1
- Marchenkova, E. B.;
- Marchenkov, V. V.;
- Kourov, N. I.;
- Pushin, V. G.;
- Korolev, A. V.;
- Weber, H. W.
- Article
42
- Journal of Low Temperature Physics, 2007, v. 148, n. 5/6, p. 863, doi. 10.1007/s10909-007-9469-8
- T. Lippman;
- J. Davis;
- H. Choi;
- J. Pollanen;
- W. Halperin
- Article
43
- Semiconductors, 2020, v. 54, n. 10, p. 1171, doi. 10.1134/S1063782620100279
- Skipetrov, E. P.;
- Kovalev, B. B.;
- Shevchenko, I. V.;
- Knotko, A. V.;
- Slynko, V. E.
- Article
44
- Semiconductors, 2017, v. 51, n. 7, p. 879, doi. 10.1134/S1063782617070168
- Kablukova, N.;
- Komarov, V.;
- Skanchenko, D.;
- Makarova, E.;
- Demidov, E.
- Article
45
- Semiconductors, 2017, v. 51, n. 6, p. 702, doi. 10.1134/S1063782617060173
- Komarov, V.;
- Suslov, A.;
- Suslov, M.
- Article
46
- Semiconductors, 2017, v. 51, n. 4, p. 413, doi. 10.1134/S1063782617040157
- Muntyanu, F.;
- Gheorghitsa, E.;
- Gilewski, A.;
- Chistol, V.;
- Bejan, V.;
- Munteanu, V.
- Article
47
- Semiconductors, 2017, v. 51, n. 3, p. 290, doi. 10.1134/S1063782617030046
- Article
48
- Semiconductors, 2016, v. 50, n. 13, p. 1716, doi. 10.1134/S1063782616130030
- Golubyatnikov, V.;
- Lysenko, A.;
- Belov, A.;
- Kanevskii, V.
- Article
49
- Semiconductors, 2016, v. 50, n. 12, p. 1635, doi. 10.1134/S1063782616120083
- Ishchenko, D.;
- Klimov, A.;
- Shumsky, V.;
- Epov, V.
- Article
50
- Semiconductors, 2015, v. 49, n. 9, p. 1154, doi. 10.1134/S1063782615090043
- Article