Works matching DE "GALLIUM selenide"

Results: 126

NUMERICAL OPTIMIZATION OF CIGS/CGS DOUBLE-ABSORBER SOLAR CELLS: ENHANCING EFFICIENCY THROUGH THICKNESS AND BANDGAP TUNING.

Published in:

Ukrainian Journal of Physical Optics, 2025, v. 26, n. 2, p. 02104, doi. 10.3116/16091833/Ukr.J.Phys.Opt.2025.02104

By:

NASSOUR, A.;
KANDOUCI, M.;
WAAR, Z. ABU;
BELGHACHI, A.;
MOUSTAFA, M.

Publication type:

Article

Effect of the Thickness of 2D GaSe Crystals on Their Photoelectric Performance.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 7, p. 5588, doi. 10.1007/s11664-025-11997-2

By:

Oman, Zabira;
Aitzhanov, Madi;
Nemkayeva, Renata;
Guseinov, Nazim;
Markhabayeva, Aiymkul;
Smirnov, Vladimir;
Mukhametkarimov, Yerzhan

Publication type:

Article

Theoretical Insights into Band Gap Tuning Through Cu Doping and Ga Vacancy in GaSe Monolayer: A First-Principles Perspective.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 5, p. 2398, doi. 10.1007/s11664-024-10977-2

By:

Behjatmanesh-Ardakani, Reza

Publication type:

Article

Revealing the Preferred Interlayer Orientations and Stackings of Two-Dimensional Bilayer Gallium Selenide Crystals.

Published in:

Angewandte Chemie, 2015, v. 127, n. 9, p. 2750, doi. 10.1002/ange.201409743

By:

Li, Xufan;
Basile, Leonardo;
Yoon, Mina;
Ma, Cheng;
Puretzky, Alexander A.;
Lee, Jaekwang;
Idrobo, Juan C.;
Chi, Miaofang;
Rouleau, Christopher M.;
Geohegan, David B.;
Xiao, Kai

Publication type:

Article

Layer-Dependent Nonlinear Optical Properties and Stability of Non-Centrosymmetric Modification in Few-Layer GaSe Sheets.

Published in:

Angewandte Chemie, 2015, v. 127, n. 4, p. 1201, doi. 10.1002/ange.201409837

By:

Jie, Wenjing;
Chen, Xi;
Li, Dian;
Xie, Lu;
Hui, Yeung Yu;
Lau, Shu Ping;
Cui, Xiaodong;
Hao, Jianhua

Publication type:

Article

Effect of annealing under various atmospheres on the properties of electrodeposited CIGS thin films on ITO coated glass substrates.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 4, p. 3481, doi. 10.1007/s10854-015-4181-y

By:

Adel, Chihi;
Fethi, Boujmil;
Brahim, Bessais

Publication type:

Article

A study on photo-induced crystallization in GaSeTl thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 8, p. 6206, doi. 10.1007/s10854-015-3204-z

By:

Tripathi, Ravi;
Akhtar, M.;
Alvi, M.;
Khan, Shamshad

Publication type:

Article

Surface evolution of sputtered Cu(In,Ga)Se thin films under various annealing temperatures.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 7, p. 4840, doi. 10.1007/s10854-015-2991-6

By:

Han, Jun-feng;
Ouyang, Liang-qi;
Zhuang, Da-ming;
Zhao, Ming;
Liao, Cheng;
Liu, Jiang;
Cha, Limei;
Besland, M.-P.

Publication type:

Article

Preparation and characterization of Cu(In, Ga)Se powders via the modified solvothermal route.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 6, p. 3479, doi. 10.1007/s10854-015-2858-x

By:

Lin, Yi-Hsung;
Lu, Chung-Hsin

Publication type:

Article

Formation and properties of cadmium sulfide buffer layer for CIGS solar cells grown using hot plate bath deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 6, p. 2786, doi. 10.1007/s10854-014-1943-x

By:

Mousavi, S.;
Jilavi, M.;
Müller, T.;
Oliveira, P.

Publication type:

Article

Dielectric Properties and Electrical Conductivity of (1-x)TlGaSe2 · xTm Crystals.

Published in:

Inorganic Materials, 2018, v. 54, n. 7, p. 627, doi. 10.1134/S0020168518070099

By:

Mustafaeva, S. N.;
Asadov, S. M.;
Kerimova, E. M.

Publication type:

Article

Crystal structure and electronic spectrum of InGaSe.

Published in:

Inorganic Materials, 2017, v. 53, n. 7, p. 670, doi. 10.1134/S0020168517070068

By:

Gojaev, E.;
Jakhangirli, Z.;
Ragimov, R.;
Alieva, P.

Publication type:

Article

Electrochemical, optical, and magnetic properties of NiGaSe (0 < x ≤ 1) intercalation compounds.

Published in:

Inorganic Materials, 2015, v. 51, n. 11, p. 1086, doi. 10.1134/S0020168515100039

By:

Boledzyuk, V.;
Kovalyuk, Z.;
Kudrynskyi, Z.;
Pyrlya, M.;
Feshak, T.;
Shevchenko, A.

Publication type:

Article

Structure of oxidized and unoxidized end faces of GaSe layered crystals.

Published in:

Inorganic Materials, 2014, v. 50, n. 4, p. 339, doi. 10.1134/S0020168514040062

By:

Katerynchuk, V.;
Kudrynskyi, Z.;
Kovalyuk, Z.

Publication type:

Article

Effects of temperature and rare-earth doping on the transport properties of GaSe crystals.

Published in:

Inorganic Materials, 2014, v. 50, n. 4, p. 334, doi. 10.1134/S0020168514040013

By:

Abdinov, A.;
Babaeva, R.;
Ragimova, N.;
Rzaev, R.;
Amirova, S.

Publication type:

Article

Heat capacity and thermodynamic functions of GaSe from 300 to 700 K.

Published in:

Inorganic Materials, 2014, v. 50, n. 3, p. 233, doi. 10.1134/S0020168514030157

By:

Tyurin, A.;
Gavrichev, K.;
Khoroshilov, A.;
Zlomanov, V.

Publication type:

Article

Optical absorption edge of TlInGaSe solid solutions.

Published in:

Inorganic Materials, 2013, v. 49, n. 3, p. 230, doi. 10.1134/S002016851302009X

By:

Gojaev, E.;
Efendiev, Sh.;
Khalilova, Kh.;
Allakhyarov, E.

Publication type:

Article

Electrical and optical properties of Al-intercalated InSe and GaSe.

Published in:

Inorganic Materials, 2013, v. 49, n. 1, p. 22, doi. 10.1134/S0020168513010019

By:

Boledzyuk, V.;
Kovalyuk, Z.;
Pyrlya, M.;
Barbutsa, S.

Publication type:

Article

Influence of Different Layers on Enhancing the PV Performance of Al/ZnO/ZnMnO/CIGSSe/Cu2O/Ni Solar Cells.

Published in:

Applied Solar Energy (19349424), 2024, v. 60, n. 2, p. 201, doi. 10.3103/S0003701X23601357

By:

Sawrab Sikder;
Hosen, Rakib;
Uddin, Md. Shihab;
Haque, Md. Manjurul;
Mamur, Hayati;
Bhuiyan, Mohammad Ruhul Amin

Publication type:

Article

Liquid‐Phase Exfoliated Gallium Selenide for Light‐Driven Thin‐Film Transistors.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 3, p. 1, doi. 10.1002/aelm.202001080

By:

Curreli, Nicola;
Serri, Michele;
Zappia, Marilena Isabella;
Spirito, Davide;
Bianca, Gabriele;
Buha, Joka;
Najafi, Leyla;
Sofer, Zdeněk;
Krahne, Roman;
Pellegrini, Vittorio;
Bonaccorso, Francesco

Publication type:

Article

Giant and Linear Piezo‐Phototronic Response in Layered GaSe Nanosheets.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201700447

By:

Jia, Tanhua;
Fuh, Huei‐Ru;
Chen, Dengyun;
Abid, Mohamed;
Abid, Mourad;
Zhang, Duan;
Sarker, Anas B.;
Cho, Jiung;
Choi, Miri;
Chun, Byong Sun;
Xu, Hongjun;
Ó Coileáin, Cormac;
Liu, Huajun;
Chang, Ching‐Ray;
Wu, Han‐Chun

Publication type:

Article

Solar Cell Based on Hybrid Structural SiNW/Poly(3,4 ethylenedioxythiophene): Poly(styrenesulfonate)/Graphene.

Published in:

Global Challenges, 2020, v. 4, n. 9, p. 1, doi. 10.1002/gch2.202000010

By:

Anh, Nguyen Ngoc;
Van Chuc, Nguyen;
Thang, Bui Hung;
Van Nhat, Pham;
Hao, NguyenVan;
Phuong, Doan Dinh;
Minh, Phan Ngoc;
Subramani, Thiyagu;
Fukata, Naoki;
Van Trinh, Pham

Publication type:

Article

Shear Exfoliation and Photoresponse of 2D‐Layered Gallium Selenide Nanosheets.

Published in:

Physica Status Solidi - Rapid Research Letters, 2018, v. 12, n. 10, p. N.PAG, doi. 10.1002/pssr.201800226

By:

Chan, A. Sattar;
Fu, Xiao;
Panin, Gennady N.;
Cho, Hak Dong;
Lee, Dong Jin;
Kang, Tae Won

Publication type:

Article

Computer Simulation of The Effect of Band Cap Grading of The Cigs Absorber Layer on The Performance of Cds/Cigs Thin Film Solar Cell.

Published in:

Al-Rafadain Engineering Journal, 2012, v. 20, n. 3, p. 44

By:

Ali, Luqman Sufer;
Abdullah, Anas Khalid

Publication type:

Article

Mechanical stabilities and nonlinear properties of monolayer Gallium selenide under tension.

Published in:

Modern Physics Letters B, 2015, v. 29, n. 12, p. 1, doi. 10.1142/S0217984915500499

By:

Liu, Gang;
Xia, Suxia;
Hou, Bin;
Gao, Tao;
Zhang, Ru

Publication type:

Article

Sum-frequency generation of Q-switched CO laser radiation in BaGa2GeSe6 and GaSe nonlinear crystals.

Published in:

Optical & Quantum Electronics, 2018, v. 50, n. 6, p. 1, doi. 10.1007/s11082-018-1514-0

By:

Badikov, Dmitriy V.;
Badikov, Valeriy V.;
Ionin, Andrey A.;
Kinyaevskiy, Igor O.;
Klimachev, Yury M.;
Kotkov, Andrey A.;
Mitin, Konstantin V.;
Mokrousova, Daria V.;
Mojaeva, Vera A.

Publication type:

Article

Theoretical analysis and experimental verification of AZO/i-ZnO/CdS/CIGS multilayer stack isolation using 1064 nm and 355 nm laser wavelengths.

Published in:

Optical & Quantum Electronics, 2017, v. 49, n. 2, p. 1, doi. 10.1007/s11082-017-0925-7

By:

Chen, Ming-Fei;
Hsiao, Wen-Tse;
Wang, Ming-Cheng;
Chen, Ying-Fang;
Lo, Chi-Min

Publication type:

Article

Strong-field physics: Harmonic radiation from crystals.

Published in:

Nature, 2015, v. 523, n. 7562, p. 541, doi. 10.1038/523541a

By:

Hommelhoff, Peter;
Higuchi, Takuya

Publication type:

Article

Optical Properties of Boron-Doped Gallium Selenide.

Published in:

Optics & Spectroscopy, 2017, v. 123, n. 6, p. 875, doi. 10.1134/S0030400X17120074

By:

Guseinov, A. G.;
Salmanov, V. M.;
Mamedov, R. M.;
Salmanova, A. A.;
Akhmedova, F. Sh.

Publication type:

Article

Bleaching in the region of exciton resonance of layered GaSe crystals.

Published in:

Optics & Spectroscopy, 2014, v. 117, n. 3, p. 419, doi. 10.1134/S0030400X1409015X

By:

Kyazym-zade, A.;
Salmanov, V.;
Guseinov, A.;
Salmanova, A.;
Mamedov, R.;
Dzhavadzade, A.

Publication type:

Article

Optical nonlinearities in GaSe and InSe crystals upon laser excitation.

Published in:

Optics & Spectroscopy, 2014, v. 116, n. 4, p. 595, doi. 10.1134/S0030400X1404016X

By:

Kyazym-zade, A.;
Salmanov, V.;
Guseinov, A.;
Gasanova, L.;
Mamedov, R.

Publication type:

Article

Gallium Selenide Thin Films Grown on Silicon by Plasma-Enhanced Chemical Vapor Deposition.

Published in:

High Energy Chemistry, 2024, v. 58, n. 4, p. 440, doi. 10.1134/S0018143924700309

By:

Kudryashov, M. A.;
Mochalov, L. A.;
Kudryashova, Yu. P.;
Slapovskaya, E. A.

Publication type:

Article

Solution‐Processed Chalcopyrite Solar Cells: the Grain Growth Mechanism and the Effects of Cu/In Mole Ratio.

Published in:

Advanced Energy Materials, 2022, v. 12, n. 6, p. 1, doi. 10.1002/aenm.202103644

By:

Yu, Shaotang;
Li, Bingyan;
Jiang, Jingjing;
Liu, Xinge;
Hao, Shasha;
Han, Shuaiqi;
Yan, Weibo;
Xin, Hao

Publication type:

Article

GaSb/GaAlAsSb Heterostructure Photodiodes for the Near-IR Spectral Range.

Published in:

Semiconductors, 2018, v. 52, n. 9, p. 1215, doi. 10.1134/S1063782618090099

By:

Kunitsyna, E. V.;
Andreev, I. A.;
Konovalov, G. G.;
Ivanov, E. V.;
Pivovarova, A. A.;
Il’inskaya, N. D.;
Yakovlev, Yu. P.

Publication type:

Article

Ab initio calculations of phonon dispersion in CdGaSe.

Published in:

Semiconductors, 2017, v. 51, n. 5, p. 556, doi. 10.1134/S1063782617050074

By:

Dzhakhangirli, Z.;
Kerimova, T.;
Abdullayev, N.;
Mamedova, I.;
Mamedov, N.

Publication type:

Article

Prompt quality monitoring of InSe and GaSe semiconductor crystals by the nuclear quadrupole resonance technique.

Published in:

Semiconductors, 2016, v. 50, n. 8, p. 1034, doi. 10.1134/S1063782616080200

By:

Samila, A.;
Lastivka, G.;
Khandozhko, V.;
Kovalyuk, Z.

Publication type:

Article

On the charge neutrality level and the electronic properties of interphase boundaries in the layered ε-GaSe semiconductor.

Published in:

Semiconductors, 2015, v. 49, n. 10, p. 1307, doi. 10.1134/S1063782615100061

By:

Brudnyi, V.;
Sarkisov, S.;
Kosobutsky, A.

Publication type:

Article

Raman scattering in ZnGaSe single crystals.

Published in:

Semiconductors, 2014, v. 48, n. 7, p. 868, doi. 10.1134/S1063782614070112

By:

Kerimova, T.;
Mamedova, I.;
Abdullayev, N.;
Asadullayeva, S.;
Badalova, Z.

Publication type:

Article

Dependence of carrier mobility on an electric field in gallium selenide crystals.

Published in:

Semiconductors, 2012, v. 46, n. 6, p. 730, doi. 10.1134/S1063782612060024

By:

Abdinov, A.;
Babaeva, R.;
Rzayev, R.

Publication type:

Article

Enhanced Transmittance and Photoelectrochemical 2D Nanostructured N-Type Semiconductor ZnS Thin Film Prepared by One-Step Electrodeposition in a Non-Vacuum-Processed CIGS Cell.

Published in:

Journal of Electronic Materials, 2020, v. 49, n. 4, p. 2539, doi. 10.1007/s11664-020-07959-5

By:

Li, Libo;
Zhai, Mo;
Long, Canghai;
Wang, Wentao

Publication type:

Article

Depth Profile of Impurity Phase in Wide-Bandgap Cu(In1−x,Gax)Se2 Film Fabricated by Three-Stage Process.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 9, p. 4944, doi. 10.1007/s11664-018-6120-1

By:

Wang, Shenghao;
Nazuka, Takehiro;
Hagiya, Hideki;
Takabayashi, Yutaro;
Ishizuka, Shogo;
Shibata, Hajime;
Niki, Shigeru;
Islam, Muhammad M.;
Akimoto, Katsuhiro;
Sakurai, Takeaki

Publication type:

Article

Performance of Ge-Sandwiched GaSe Layers.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 8, p. 4621, doi. 10.1007/s11664-018-6330-6

By:

Qasrawi, A. F.;
Abdallah, Maisam M. A.

Publication type:

Article

Effects of Substrate Temperature on Structural and Optical Properties of Spray-Pyrolyzed Cu(GaIn)Se Thin Films on Polyimide Plastic Substrate.

Published in:

Journal of Electronic Materials, 2017, v. 46, n. 12, p. 6745, doi. 10.1007/s11664-017-5746-8

By:

Faraj, M.;
Pakhuruddin, M.;
Taboada, P.

Publication type:

Article

Full Sputtering Deposition of Thin Film Solar Cells: A Way of Achieving High Efficiency Sustainable Tandem Cells?

Published in:

Journal of Electronic Materials, 2017, v. 46, n. 11, p. 6523, doi. 10.1007/s11664-017-5694-3

By:

Vilcot, J.-P.;
Ayachi, B.;
Aviles, T.;
Miska, P.

Publication type:

Article

Comparative Study of Shallow Acceptor Levels in Unintentionally Doped p-Type GaSe Crystals Prepared by the Bridgman and Liquid Phase Solution Growth Methods.

Published in:

Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3117, doi. 10.1007/s11664-014-3284-1

By:

Nagai, Yuki;
Maeda, Kensaku;
Suzuki, Kohei;
Oyama, Yutaka

Publication type:

Article

Vacancy Formation Energy for the Charged and Neutral States of TlGaSe2 Crystal.

Published in:

Metallophysics & Advanced Technologies / Metallofizika i Novejsie Tehnologii, 2017, v. 39, n. 5, p. 657, doi. 10.15407/mfint.39.05.0657

By:

Ismayilova, N. A.;
Orudzhev, G. S.

Publication type:

Article

Semiconductor clathrates with a periodically modulated topology of a host ferroelectric liquid crystal in thermal, magnetic, and light-wave fields.

Published in:

Technical Physics, 2014, v. 59, n. 7, p. 1085, doi. 10.1134/S1063784214070068

By:

Bishchaniuk, T.;
Grygorchak, I.;
Fechan, A.;
Ivashchyshyn, F.

Publication type:

Article

Spectral anisotropy of a photoresponse from heterojunctions based on GaSe and InSe layered crystals.

Published in:

Technical Physics, 2014, v. 59, n. 3, p. 407, doi. 10.1134/S1063784214030141

By:

Katerinchuk, V.;
Kudrynskyi, Z.;
Kovalyuk, Z.

Publication type:

Article

Sensitive elements of pressure transducers made of layered intercalated InSe, GaSe, and Bi2Te3 crystals.

Published in:

Technical Physics, 2013, v. 58, n. 12, p. 1840, doi. 10.1134/S106378421312013X

By:

Kudrynskyi, Z. R.;
Kovalyuk, Z. D.

Publication type:

Article

Dual‐Gate Graphene/h‐BN/GaSe Metal–Insulator–Semiconductor Field‐Effect Transistor (MISFET).

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 20, p. 1, doi. 10.1002/pssa.202100818

By:

Abderrahmane, Abdelkader;
Jung, Pan-Gum;
Woo, Changlim;
Ko, Pil Ju

Publication type:

Article